STTH3R6 TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER Table 1: Main Product Characteristics I (AV) V RRM 3 A 6 V I R (max) 1 µa T j 175 C V (typ) 1. V t rr (typ) 35 ns A K EATURES AND BENEITS Ultrafast switching Low forward voltage drop Low thermal resistance Low leakage current (platinium doping) DO-21AD STTH3R6 DESCRIPTION The STTH3R6, which is using ST Turbo 2 6V technology, is specially suited for use in switching power supplies, inverters and as a free wheeling diode. SMB STTH3R6U SMC STTH3R6S Table 2: Order Codes Part Number STTH3R6 STTH3R6RL STTH3R6U STTH3R6S Marking STTH3R6 STTH3R6 3R6U R6S September 25 REV. 3 1/9
STTH3R6 Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I (RMS) RMS forward current 1 A I (AV) Average forward current DO-21AD Tl = 8 C 3 A δ =.5 SMB Tl = 55 C SMC Tl = 8 C I SM Surge non repetitive forward current DO-21AD tp = 1ms 55 A SMB / SMC sinusoidal 45 T stg Storage temperature range -65 to + 175 C T j Maximum operating junction temperature 175 C Table 4: Thermal Parameters Symbol Parameter Maximum Unit R th(j-l) Junction to lead DO-21AD L = 1 mm 2 C/W SMB 25 SMC 2 R th(j-a) Junction to ambient (see fig. 13) DO-21AD L = 1 mm 75 C/W Table 5: Static Electrical Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R Reverse leakage current T j = 25 C V R = V RRM 3 µa T j = 15 C 15 1 V orward voltage drop T j = 25 C I = 3A 1.7 V T j = 15 C 1. 1.25 To evaluate the conduction losses use the following equation: P = 1.3 x I (AV) +.9 I 2 (RMS) Table 6: Dynamic Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery T j = 25 C I =.5A I RR =.25A I R = 1A 3 ns time I = 1A di /dt = -5 A/µs V R =3V 35 t fr V P orward recovery time orward recovery voltage T j = 25 C I = 3A di /dt = 1 A/µs V R = 1.1 x V max 1 ns I = 3A di /dt = 1 A/µs 1 V 2/9
STTH3R6 igure 1: Conduction losses versus average current igure 2: orward voltage drop versus forward current 5. 4.5 4. 3.5 P(W) δ =.5 δ =.1 δ =.2 δ =.5 δ = 1 5 45 4 35 I M(A) T j=15 C (maximum values) 3. 3 T j=15 C (typical values) 2.5 2. 25 2 T j=25 C (maximum values) 1.5 1. T 15 1.5. I (AV) (A) δ=tp/t tp..5 1. 1.5 2. 2.5 3. 3.5 4. 5 V M(V)..5 1. 1.5 2. 2.5 3. 3.5 4. igure 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy printed circuit R4, L leads = 1mm, S CU =1cm 2 ) 1..9.8.7.6.5.4.3.2.1. Z th(j-a) /Rth(j-a) Single pulse SMB S Cu = 1cm2 SMC S Cu = 1cm2 t (s) p DO-21AD L leads = 1mm 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 igure 4: Peak reverse recovery current versus di /dt (typical values) 13 12 11 1 9 8 7 6 5 4 3 2 1 I RM(A) V R=4V I =.25 x I(AV) I =.5 x I(AV) I =2 x I(AV) 5 1 15 2 25 3 35 4 45 5 igure 5: Reverse recovery time versus di /dt (typical values) 16 15 14 13 12 11 1 9 8 7 6 5 4 3 2 1 t (ns) rr I =2 x I(AV) V R=4V I =.5 x I(AV) 5 1 15 2 25 3 35 4 45 5 igure 6: Reverse recovery charges versus di /dt (typical values) 45 4 35 3 25 2 15 1 5 Q (nc) rr V R=4V I =2 x I(AV) I =.5 x I(AV) 5 1 15 2 25 3 35 4 45 5 3/9
STTH3R6 igure 7: Softness factor versus d I /dt (typical values) igure 8: Relative variations of dynamic parameters versus junction temperature 3. 2.5 S factor V R=4V 1..9.8 IRM S factor 2. 1.5.7.6.5.4 QRR 1..5.. 5 1 15 2 25 3 35 4 45 5.3.2.1 T ( C) j V R=4V Reference: 25 5 75 1 125 igure 9: Transient peak forward voltage versus di /dt (typical values) igure 1: orward recovery time versus di /dt (typical values) 2 18 16 V P(V) 2 18 16 t (ns) fr V R=1.1 x V max. 14 14 12 12 1 1 8 8 6 6 4 4 2 2 4 6 8 1 12 14 16 18 2 2 2 4 6 8 1 12 14 16 18 2 igure 11: Junction capacitance versus reverse voltage applied (typical values) igure 12: Thermal resistance junction to ambient versus copper surface under lead (epoxy R4, e CU =35µm) (DO-21AD) 1 C(p) =1MHz V OSC=3mVRMS T j=25 C 8 7 R th(j-a) ( C/W) 6 5 DO-21AD 1 4 3 2 1 V (V) R 1 1 1 1 1 S CU(cm²) 1 2 3 4 5 6 7 8 9 1 4/9
STTH3R6 igure 13: Thermal resistance junction to ambient versus copper surface under lead (epoxy R4, e CU =35µm) (SMB / SMC) igure 14: Thermal resistance versus lead length 11 1 9 8 7 6 5 4 3 2 1 R th(j-a) ( C/W) SMB SMC S CU(cm²)..5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. 1 9 8 7 6 5 4 3 2 1 R th( C/W) DO-21AD Rth(j-a) Rth(j-l) L lead(mm) 5 1 15 2 25 5/9
STTH3R6 igure 15: SMB Package Mechanical Data DIMENSIONS E1 RE. Millimeters Inches Min. Max. Min. Max. D A1 1.9 2.45.75.96 A2.5.2.2.8 b 1.95 2.2.77.87 E c.15.41.6.16 C L A1 A2 b E 5.1 5.6.21.22 E1 4.5 4.6.159.181 D 3.3 3.95.13.156 L.75 1.6.3.63 igure 16: SMB oot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 6/9
STTH3R6 igure 17: SMC Package Mechanical Data C E1 E L D A1 A2 b DIMENSIONS RE. Millimeters Inches Min. Max. Min. Max. A1 1.9 2.45.75.96 A2.5.2.2.8 b 2.9 3.2.114.126 c.15.41.6.16 E 7.75 8.15.35.321 E1 6.6 7.15.26.281 E2 4.4 4.7.173.185 D 5.55 6.25.218.246 L.75 1.6.3.63 igure 18: SMC oot Print Dimensions (in millimeters) 3.3 2. 4.2 2. 7/9
STTH3R6 igure 19: DO-21AD Package Mechanical Data DIMENSIONS B A B ØC RE. Millimeters Inches note 1 E ØD note 2 E ØD note 1 Min. Max. Min. Max. A 9.5.374 B 25.4 1. C 5.3.29 D 1.3.51 E 1.25.49 1 - The lead diameter ø D is not controlled over zone E 2 - The minimum axial length within which the device NOTES may be placed with its leads bent at right angles is.59"(15 mm) In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STTH3R6 STTH3R6 DO-21AD 1.12 g 6 Ammopack STTH3R6-RL STTH3R6 DO-21AD 1.12 g 19 Tape & reel STTH3R6U 3R6U SMB.11 g 25 Tape & reel STTH3R6S R6S SMC.243 g 25 Tape & reel Epoxy meets UL94, V Band indicated cathode (DO-21AD) Bending method: see application note AN1471 (DO-21AD) Table 8: Revision History Date Revision Description of Changes March-23 1 irst issue 7-Sep-24 2 SMB and SMC packages added 14-Oct-25 3 Changed marking of STTH3R6U from R6U to 3R6U on page 1. Added ECOPACK statement. 8/9
STTH3R6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 25 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9