High Intensity SMD LED Description This device has been designed to meet the increasing demand for AlInGaP technology. The package of the is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. Features SMD LED with exceptional brightness 9225 e3 Pb Pb-free Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Luminous intensity ratio in one packaging unit I Vmax /I Vmin.6 Lead-free device Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLMK300 Red,I V > 0 mcd 60 AllnGaP on GaAs TLMK302 Red, I V = (20 to 6) mcd 60 AllnGaP on GaAs TLMK305 Red, I V = (32 to 00) mcd 60 AllnGaP on GaAs Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Reverse voltage V R 5 V DC Forward current T amb 60 C I F 30 ma Surge forward current t p 0 µs I FSM 0. A Power dissipation T amb 60 C P V 80 mw Junction temperature T j 00 C Operating temperature range T amb - 0 to + 00 C
VISHAY Parameter Test condition Symbol Value Unit Storage temperature range T stg - 55 to + 00 C Soldering temperature t 5 s T sd 260 C Thermal resistance junction/ ambient mounted on PC board (pad size > 6 mm 2 ) R thja 00 K/W Optical and Electrical Characteristics T amb = 25 C, unless otherwise specified Red Parameter Test condition Part Symbol Min Typ. Max Unit Luminous intensity 2) I F = 0 ma TLMK300 I V 0 8 mcd TLMK302 I V 20 63 mcd TLMK305 I V 32 00 mcd Dominant wavelength I F = 0 ma λ d 630 nm Peak wavelength I F = 0 ma λ p 63 nm Angle of half intensity I F = 0 ma ϕ ± 60 deg Forward voltage I F = 20 ma V F.9 2.6 V Reverse voltage I R = 0 µa V R 5 V Junction capacitance V R = 0, f = MHz C j 5 pf ) in one Packing Unit I Vmax /I Vmin 2.0 Typical Characteristics (T amb = 25 C unless otherwise specified) P V Power Dissipation (mw) 00 80 60 0 20 I Forward Current ( ma ) F 0 35 30 25 20 5 0 5 0 0 20 0 60 80 00 0 0 0 20 30 0 50 60 70 80 90 00 66 T amb Ambient Temperature ( C ) 665 T amb Ambient Temperature ( C ) Figure. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN 2
I Vre l - Relative Luminous Intensity 0.9 0.7 0 0 20 30 0 50 60 70 80 I V rel - Relative Luminous Intensity 2.0.8.6. 0 2 5 0 20 50 I F (ma) 95 039 96 589 0.5 0. 5 2 t p /T Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 00 0 I F - Forward Current ( ma ) 0 I Vrel - Relative Luminous Intensity 0..5 2.0 2.5 3.0 95 0878 V F - Forward Voltage (V) 0 00 96 588 I F - Forward Current ( ma ) Figure. Forward Current vs. Forward Voltage Figure 7. Relative Luminous Intensity vs. Forward Current I Vrel Relative Luminous Intensity 668 2.0.8.6. 0 0 20 30 0 50 60 70 80 90 00 T amb Ambient Temperature ( C ) I rel - Relative Intensity 96 2075. 0.9 0.7 0.5 0.3 0. 600 60 620 630 60 650 660 670 680 690 700 λ - Wavelength ( nm ) Figure 5. Rel. Luminous Intensity vs. Ambient Temperature Figure 8. Relative Intensity vs. Wavelength 3
VISHAY V Frel Relative Forward Voltage 667 2.0 2.05 2.00.95.90.85.80.75.70.65 I F =20mA Red.60 0 0 20 30 0 50 60 70 80 90 00 T amb Ambient Temperature ( C ) I FM Forward Current ( ma ) 000 00 6622 t p /T = 0.5 2 5 0. 0 0 0 00 t p Pulse Length ( ms ) Figure 9. Forward Voltage vs. Ambient Temperature Figure 0. Forward Current vs. Pulse Length Package Dimensions in mm 3.5 ±.65 + - 5 5 technical drawings according to DIN specifications Mounting Pad Layout Pin identification area covered with solder resist 2.8 + 0.5 C A 2.2 2.6 (2.8).6 (.9) 2. 3 + 0.5 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.5-5025.0- Issue: 7; 05. 95 3
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/50/EEC and 9/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7025 Heilbronn, Germany Telephone: 9 (0)73 67 283, Fax number: 9 (0)73 67 223 5