STTH8L6D/FP TURBO 2 ULTRFST HIGH VOLTGE RECTIFIER MIN PRODUCT CHRCTERISTICS I F(V) V RRM 8 6 V I R (max) 2 µ Tj (max) 75 C V F (max).5 V trr (max) 5 ns FETURES ND BENEFITS Ultrafast switching Low reverse recovery current Reduces switching & conduction losses Low thermal resistance DESCRIPTION The STTH8L6FP, which is using ST Turbo2 6V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device, available in TO-22C and TO-22FPC, is also intended for use as a free wheeling diode in power supplies and other power switching applications. TO-22C STTH8L6D K TO-22FPC STTH8L6FP K BSOLUTE RTINGS (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) RMS forward current 3 I F(V) verage forward current TO-22C Tc = 5 C δ =.5 8 TO-22FPC Tc = C δ =.5 I FSM Surge non repetitive forward current tp = ms Sinusoidal 2 T stg Storage temperature range - 65 + 75 C Tj Maximum operating junction temperature + 75 C November 22 - Ed: 2 /6
STTH8L6D/FP THERML PRMETERS Symbol Parameter Maximum Unit R th(j-c) Junction to case TO-22C 2.5 C/W TO-22FPC 5 STTIC ELECTRICL CHRCTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit I R Reverse leakage current V R = 6V Tj = 25 C 8 µ Tj = 5 C 6 2 V F Forward voltage drop I F = 8 Tj = 25 C.3 V To evaluate the maximum conduction losses use the following equation : P=.89xI F(V) +.22 I F 2 (RMS) Tj = 5 C.85.5 DYNMIC ELECTRICL CHRCTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit trr Reverse recovery time I F = di F /dt = 5 /µs V R = 3V Tj = 25 C 75 5 ns tfr Forward recovery time I F =8 di F /dt = /µs V FR =.xv F max Tj = 25 C 5 ns V FP Peak forward voltage I F =8 di F /dt = /µs Tj = 25 C 6 V 2/6
STTH8L6D/FP Fig. : Conduction losses versus average current. P(W) δ =.5 δ =. δ =.2 δ =.5 9 8 δ = 7 6 5 4 3 T 2 IF(av)() δ=tp/t tp 2 4 6 8 Fig. 2: Forward voltage drop versus forward current. IFM().... Tj=5 C (Maximum values) Tj=5 C (Typical values) Tj=25 C (Maximum values) VFM(V)..5..5 2. 2.5 3. Fig. 3-: Relative variation of thermal impedance junction to case versus pulse duration (TO-22C) Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-22FPC). Zth(j-c)/Rth(j-c). Zth(j-c)/Rth(j-c).9.9.8.8.7.7.6 δ =.5.6 δ =.5.5.5.4 δ =.2.4.3 δ =..2 Single pulse.. T tp(s) δ=tp/t tp.e-3.e-2.e-.e+ δ =.2.3 δ =..2. Single pulse. T tp(s) δ=tp/t tp.e-3.e-2.e-.e+.e+ Fig. 4: Peak reverse recovery current versus di F /dt (9% confidence). IRM() 9 8 7 6 5 4 3 2 VR=4V IF=.25 x IF(av) IF=.5 x IF(av) IF=2 x IF(av) 2 3 4 5 6 7 8 9 Fig. 5: Reverse recovery time versus di F /dt (9% confidence). trr(ns) 9 8 7 6 5 4 3 2 IF=.5 x IF(av) IF=2 x IF(av) VR=4V 2 4 6 8 2 4 6 8 2 3/6
STTH8L6D/FP Fig. 6: Reverse recovery charges versus di F /dt (9% confidence). Fig. 7: Softness factor versus di F /dt (typical values). 8 7 6 5 Qrr(nC) VR=4V IF=2 x IF(av) 2..8.6.4.2 S factor IF = IF(av) VR=4V 4 IF=.5 x IF(av). 3 2 2 4 6 8 2 4 6 8 2.8.6.4.2. 25 5 75 25 5 75 2 Fig. 8: Relative variations of dynamic parameters versus junction temperature. Fig. 9: Transient peak forward voltage versus di F /dt (9% confidence)..25. S factor 8 7 6 VFp(V).75.5 IRM QRR 5 4 3.25 IF = IF(av) VR=4V Tj( C) Reference:. 25 5 75 25 2 2 4 6 8 2 4 6 8 2 Fig. : Forward recovery time versus di F /dt (9% confidence). Fig. : Junction capacitance versus reverse voltage applied (typical values). 3 25 tfr(ns) VFR=. x VF max. C(pF) F=MHz Vosc=3mV Tj=25 C 2 5 5 2 4 6 8 2 4 6 8 2 VR(V) 4/6
STTH8L6D/FP PCKGE MECHNICL DT TO-22C DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. H B 4.4 4.6.73.8 C.23.32.48.5 D 2.4 2.72.94.7 Dia E.49.7.9.27 L3 L2 L6 L7 F.6.88.24.34 F.4.7.44.66 G 4.95 5.5.94.22 H2..4.393.49 L4 F L5 D L2 6.4 typ..645 typ. L4 3. 4..5.55 L5 2.65 2.95.4.6 L6 5.25 5.75.6.62 G F E L7 6.2 6.6.244.259 L9 3.5 3.93.37.54 G M 2.6 typ..2 typ. Diam. I 3.75 3.85.47.5 5/6
STTH8L6D/FP PCKGE MECHNICL DT TO-22FPC DIMENSIONS L3 L2 L4 H F L6 L5 Dia D B L7 REF. Millimeters Inches Min. Max. Min. Max. 4.4 4.6.73.8 B 2.5 2.7.98.6 D 2.5 2.75.98.8 E.45.7.8.27 F.75.3.39 F.5.7.45.67 G 4.95 5.2.95.25 G 2.4 2.7.94.6 H.4.393.49 L2 6 Typ..63 Typ. L3 28.6 3.6.26.25 L4 9.8.6.386.47 G G F E L5 2.9 3.6.4.42 L6 5.9 6.4.626.646 L7 9. 9.3.354.366 Dia. 3. 3.2.8.26 Ordering code Marking Package Weight Base qty Delivery mode STTH8L6D STTH8L6D TO-22C.9 g 5 Tube STTH8L6FP STTH8L6FP TO-22FPC.7 g 5 Tube Epoxy meets UL 94,V Recommended torque value (TO-22C):.55 Nm Maximum torque value (TO-22C / TO-22FPC):.7 Nm Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 22 STMicroelectronics - Printed in Italy - ll rights reserved. STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6