Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel

Similar documents
Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel

34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel

Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration

Green. Pin 1 1 S S S G 2. Bottom View

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel

Pin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel

Green. Features I D T C = +25 C 37A 29A. Pin1. Part Number Case Packaging DMTH6016LPSQ-13 PowerDI ,500 / Tape & Reel

Green. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

S S. Bottom View. Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel

S S. Top View Bottom View

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel

Top View. Part Number Case Packaging DMP6180SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

Features. Part Number Case Packaging DMN60H080DS-7 SOT /Tape & Reel DMN60H080DS-13 SOT /Tape & Reel

-10.1A -8.8A. Top View Internal Schematic. Part Number Qualification Case Packaging DMP4015SSS-13 Standard SO-8 2,500/Tape & Reel

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m

FDS V P-Channel PowerTrench MOSFET

Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V

Applications. Bottom S S S. Pin 1 G D D D

Applications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V

Features. H-Bridge. Top View Pin Configuration. Part Number Case Packaging DMHC6070LSD-13 SO-8 2,500/Tape & Reel

I D T A = +25 C SO-8. Top View Pin Configuration. Part Number Case Packaging DMC6040SSDQ-13 SO-8 2,500/Tape & Reel

Features. Bottom Drain Contact G1 S1 S1 U-DFN D1 D1/D2. Bottom View G2 S2 S2 Top View Pin Configuration

P-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

(Notes 6 & 8) Top View

Green -14.5A. Pin1. Part Number Compliance Case Packaging DMP4015SPS-13 Standard POWERDI ,500 / Tape & Reel

NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel 40-V (D-S) MOSFET

DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)

N-Channel 40-V (D-S) MOSFET

D D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage (Note 4) ±20 V

N-Channel 20-V (D-S) Fast Switching MOSFET

P-Channel 60-V (D-S) MOSFET

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

P-Channel 2.5 V (G-S) MOSFET

N-Channel 80-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET

DMP4015SK3. Features and Benefits. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information

P-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m

N-Channel 20-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

NTMFS4825NFET3G. Power MOSFET 30 V, 171 A, Single N Channel, SO 8 FL

P-Channel 30-V (D-S) MOSFET

-3.4A -3.0A. Part Number Case Packaging DMP4065SQ-7 SOT23 3,000/Tape & Reel DMP4065SQ-13 SOT23 10,000/Tape & Reel

P-Channel 30-V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET

Drain. Gate. Source. Part Number Qualification Case Packaging BSN20-7 Standard SOT /Tape & Reel BSN20Q-7 Automotive SOT /Tape & Reel

Single N-Channel Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units


Is Now Part of To learn more about ON Semiconductor, please visit our website at

N-Channel 30 V (D-S) MOSFET

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D

N-Channel 250 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

P-Channel 30 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

N-Channel 60 V (D-S) MOSFET

NTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features

Green. Features. I D T C = +25 C (Note 10) 100A 95A. Pin1. Top View Pin Configuration

N-Channel 60 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402A. N-Channel Enhancement Mode Field Effect Transistor. Features

NTMF8N THERMAL REITANCE RATIN Rating ymbol Max Unit Junction-to-Case (rain) R JC. C/W Junction-to-Ambient - teady tate (Note ) R JA Junction-to-Ambien

N-Channel 20 V (D-S) MOSFET

Features. T A =25 o C unless otherwise noted

FDG6322C Dual N & P Channel Digital FET

N-Channel 100 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

Top View Bottom View Internal Schematic (Top View)

NTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL

AOD452 N-Channel Enhancement Mode Field Effect Transistor

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

N-Channel 30-V (D-S) MOSFET with Schottky Diode

74AUP2G34. Pin Assignments. Description ADVANCED INFORMATION. Features. Applications. (Top View) SOT363 X2-DFN X2-DFN X2-DFN1010-6

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

AP Pin Assignments. Description. Features UNIVERSAL DC/DC CONVERTER AP34063 SO-8. PDIP-8 ( Top View ) ( Top View )

FDV301N Digital FET, N-Channel

Transcription:

P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching peed E Protected Gate Totally Lead-Free & Fully RoH Compliant (Notes & 2) Halogen and Antimony Free. Green evice (Note 3) escription and Applications This MOFET is designed to minimize the on-state resistance (R (ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions C-C Converters Mechanical ata Case: O-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture ensitivity: Level per J-T-2 Terminal Connections Indicator: ee iagram Below Terminals: Finish Matte Tin Annealed Over Copper Lead Frame. olderable per MIL-T-22, Method 28 Weight:.74 grams (Approximate) G E PROTECTE Top View Gate Protection iode Internal chematic G Top View Pin Configuration Ordering Information (Note 4) Notes: Part Number Case Packaging -3 O-8 2,5/Tape & Reel. No purposely added lead. Fully EU irective 22/95/EC (RoH), 2/65/EU (RoH 2) & 25/863/EU (RoH 3) compliant. 2. ee https:///quality/lead-free/ for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information 8 5 P38 P34 YY WW = Manufacturer s Marking P38 = Product Type Marking Code YYWW = ate Code Marking YY or YY = Year (ex: 8 = 28) WW = Week ( to 53) 4 ocument number: 4423 Rev. 3-2 of 7 iodes Incorporated

Maximum Ratings (@T A = +25 C, unless otherwise specified.) Characteristic ymbol Value Unit rain-ource Voltage V -3 V Gate-ource Voltage V G ±25 V Continuous rain Current (Note 6) V G = -V teady T A = +25 C -.5 I tate T A = +7 C -8.5 A Continuous rain Current (Note 6) V G = -V teady T C = +25 C -25 I tate T C = +7 C -2 A Maximum Continuous Body iode Forward Current (Note 6) I -2 A Pulsed rain Current (µs Pulse, uty Cycle = %) I M -9 A Avalanche Current (Note 7) L = mh I A -4 A Avalanche Energy (Note 7) L = mh E A 4 mj Thermal Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic ymbol Value Unit Total Power issipation (Note 5) T A = +25 C P.2 W Thermal Resistance, Junction to Ambient (Note 5) teady tate R θja C/W Total Power issipation (Note 6) T A = +25 C P.7 W Thermal Resistance, Junction to Ambient (Note 6) teady tate R θja 73 C/W Total Power issipation (Note 6) P W Thermal Resistance, Junction to Case (Note 6) R θjc 2.5 C/W Operating and torage Temperature Range T J, T TG -55 to +5 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic ymbol Min Typ Max Unit Test Condition OFF CHARACTERITIC (Note 8) rain-ource Breakdown Voltage BV -3 V V G = V, I = -25μA Zero Gate Voltage rain Current I - μa V = -24V, V G = V Gate-ource Leakage I G ± μa V G = ±2V, V = V ON CHARACTERITIC (Note 8) Gate Threshold Voltage V G(TH) -. -3. V V = V G, I = -25μA tatic rain-ource On-Resistance R (ON) 8.7 2 V G = -V, I = -.5A mω 4.5 2 V G = -4.5V, I = -8.5A iode Forward Voltage V -.7 -.2 V V G = V, I = -A YNAMIC CHARACTERITIC (Note 9) Input Capacitance C iss 274 pf Output Capacitance C oss 727 pf Reverse Transfer Capacitance C rss 342 pf V = -5V, V G = V, f =.MHz Gate Resistance R g 4.2 Ω V = V, V G = V, f =.MHz Total Gate Charge (V G = -5V) Q g 3 nc Total Gate Charge (V G = -V) Q g 57 nc Gate-ource Charge Q gs 7 nc Gate-rain Charge Q gd 5.5 nc Turn-On elay Time t (ON) 7.8 ns Turn-On Rise Time t R 7.8 ns Turn-Off elay Time t (OFF) 62.2 ns Turn-Off Fall Time t F 4.9 ns Reverse Recovery Time t RR 2 ns Reverse Recovery Charge Q RR.5 nc Notes: 5. evice mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. evice mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer -inch square copper plate. 7. I A and E A ratings are based on low frequency and duty cycles to keep T J = +25 C. 8. hort duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. V = -5V, I = -.5A V = -5V, V G = -V, R G = 6Ω, I = -.5A I = -.5A, di/dt = A/μs ocument number: 4423 Rev. 3-2 2 of 7 iodes Incorporated

R (ON), RAIN-OURCE ON-REITANCE (Ω) R (ON), RAIN-OURCE ON-REITANCE (NORMALIZE) R (ON), RAIN-OURCE ON-REITANCE (Ω) R (ON), RAIN-OURCE ON-REITANCE (Ω) I, RAIN CURRENT (A) I, RAIN CURRENT (A) 3. 25. V G = -4.5V V G = -V V G = -4.V 3 25 V = -5V 2. 2 5. 5 V G = -3.5V. 5...3 V V G = -3.V G = -3.2V.5.5 2 2.5 3 V, RAIN-OURCE VOLTAGE (V) Figure. Typical Output Characteristic 5 T J = 5 T J = 85 T J = 25 T J = 25 T J = -55.5 2 2.5 3 3.5 4 4.5 V G, GATE-OURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic.2.25.5.2 V G = -4.5V I = -.5A.5...5 V G = -V.5 I = -8.5A.6 5 5 2 25 3 I, RAIN-OURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage V G = -V.8 2 4 6 8 2 4 6 8 2 V G, GATE-OURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.4 T J = 5.6 V G = -V, I = -.5A.2 T J = 25.4 T J = 85..2.8 T J = 25 V G = -4.5V, I = -8.5A.6 T J = -55.8.4 5 5 2 25 3 I, RAIN CURRENT (A) Figure 5. Typical On-Resistance vs. rain Current and Junction Temperature.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Junction Temperature ocument number: 4423 Rev. 3-2 3 of 7 iodes Incorporated

V G (V) I, RAIN CURRENT (A) I, OURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R (ON), RAIN-OURCE ON-REITANCE (Ω) V G(TH), GATE THREHOL VOLTAGE (V).3.28.26.24.22.2.8.6.4.2..8.6.4.2 V G = -4.5V, I = -8.5A V G = -V, I = -.5A -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Junction Temperature 3 25 V G = V 3 2.8 2.6 2.4 2.2 2.8.6.4.2 I = -25μA I = -ma -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Junction Temperature f = MHz C iss 2 5 C oss 5 T J = 5 o C T J = 25 o C T J = 85 o C T J = 25 o C T J = -55 o C.3.6.9.2.5 V, OURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current C rss 5 5 2 25 3 R (ON) Limited V, RAIN-OURCE VOLTAGE (V) Figure. Typical Junction Capacitance P W = µs 8 P W = ms 6 P W = ms 4 P W = ms 2 V = -5V, I = -.5A 2 3 4 5 6 Q g (nc) Figure. Gate Charge T J(Max) = 5. T C = 25 P W = s ingle Pulse UT on *MRP P W = s Board V G = -V C... V, RAIN-OURCE VOLTAGE (V) Figure 2. OA, afe Operation Area ocument number: 4423 Rev. 3-2 4 of 7 iodes Incorporated

r(t), TRANIENT THERMAL REITANCE =.7 =.5 =.3 =.9. =. =.5 =.2. =. =.5 =ingle Pulse. E-6 E-5.... t, PULE URATION TIME (sec) Figure 3. Transient Thermal Resistance R θja (t) = r(t) * R θja R θja = 3 /W uty Cycle, = t / t2 ocument number: 4423 Rev. 3-2 5 of 7 iodes Incorporated

Package Outline imensions Please see http:///package-outlines.html for the latest version. O-8 R. b 9 (All sides) e A A E 4 ± 3 7 E h 45 E L Q c Gauge Plane eating Plane O-8 im Min Max Typ A.4.5.45 A..2.5 b.3.5.4 c.5.25.2 4.85 4.95 4.9 E 5.9 6. 6. E 3.8 3.9 3.85 E 3.85 3.95 3.9 e -- --.27 h - --.35 L.62.82.72 Q.6.7.65 All imensions in mm uggested Pad Layout Please see http:///package-outlines.html for the latest version. O-8 X Y imensions Value (in mm) C.27 X.82 X 4.62 Y.55 Y 6.5 Y C X ocument number: 4423 Rev. 3-2 6 of 7 iodes Incorporated

IMPORTANT NOTICE IOE INCORPORATE MAKE NO WARRANTY OF ANY KIN, EXPRE OR IMPLIE, WITH REGAR TO THI OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIE OF MERCHANTABILITY AN FITNE FOR A PARTICULAR PURPOE (AN THEIR EQUIVALENT UNER THE LAW OF ANY JURIICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. hould Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United tates, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United tates, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE UPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 28, iodes Incorporated ocument number: 4423 Rev. 3-2 7 of 7 iodes Incorporated