P-Channel 30-V (D-S) MOSFET
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1 New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested APPLICATION Load witch Notebook Adaptor witch RoH COMPLIANT O G G 5 Top View Ordering Information: i825y-t-ge3 (Lead (Pb)-free and Halogen-free) P-Channel MOFET ABOLUTE MAXIMUM RATING T A = 25 C, unless otherwise noted Parameter ymbol Limit Unit rain-ource Voltage V - 3 V Gate-ource Voltage V G ± 25 T C = 25 C -.9 T Continuous rain Current (T J = 5 C) C = 7 C -.9 I T A = 25 C -.9 a, b T A = 7 C - 8. a, b A Pulsed rain Current I M - T Continuous ource-rain iode Current C = 25 C -. I T A = 25 C a, b Avalanche Current I A - 2 L =. mh ingle-pulse Avalanche Energy E A 2 mj T C = 25 C 5. T Maximum Power issipation C = 7 C 3.2 P W T A = 25 C 2.7 a, b T A = 7 C.7 a, b Operating Junction and torage Temperature Range T J, T stg - 55 to 5 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja 38 Maximum Junction-to-Foot teady tate R thjf 2 25 C/W Notes: a. urface mounted on " x " FR board. b. t = s. c. Maximum under teady tate conditions is 85 C/W. d. Based on T C = 25 C. ocument Number: Rev. A, 3-Oct-8
2 i825y New Product PECIFICATION T J = 25 C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic rain-ource Breakdown Voltage V V G = V, I = - 25 µa - 3 V V Temperature Coefficient ΔV /T J - 3 mv/ I = - 25 µa V G(th) Temperature Coefficient ΔV G(th) /T J 5.3 C Gate-ource Threshold Voltage V G(th) V = V G, I = - 25 µa V Gate-ource Leakage I G V = V, V G = ± 25 V ± na V = - 3 V, V G = V - Zero Gate Voltage rain Current I V = - 3 V, V G = V, T J = 55 C - 5 µa On-tate rain Current a I (on) V - V, V G = - V - 3 A rain-ource On-tate Resistance a V R G = - V, I = - A..25 (on) V G = -.5 V, I = - 8 A.5.25 Ω Forward Transconductance a g fs V = - V, I = - A 28 ynamic b Input Capacitance C iss 255 Output Capacitance C oss V = - 5 V, V G = V, f = MHz 55 pf Reverse Transfer Capacitance C rss 39 V = - 5 V, V G = - V, I = - A 57 8 Total Gate Charge Q g nc Gate-ource Charge Q gs V = - 5 V, V G = -.5 V, I = - A 8 Gate-rain Charge Q gd 22 Gate Resistance R g f = MHz Ω Turn-On elay Time t d(on) 3 25 Rise Time t r V = - 5 V, R L =.5 Ω 2 2 Turn-Off elaytime t d(off) I - A, V GEN = - V, R g = Ω 7 Fall Time t f 9 8 Turn-On elay Time t d(on) 8 8 ns Rise Time t r V = - 5 V, R L =.5 Ω 92 Turn-Off elaytime t d(off) I - A, V GEN = -.5 V, R g = Ω 3 Fall Time t f 9 35 rain-ource Body iode Characteristics Continous ource-rain iode Current I T C = 25 C -. Pulse iode Forward Current I M - A Body iode Voltage V I = - 3 A, V G = V V Body iode Reverse Recovery Time t rr 27 5 ns Body iode Reverse Recovery Charge Q rr 27 nc I F = - A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 2 ns Reverse Recovery Rise Time t b 5 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 ocument Number: Rev. A, 3-Oct-8
3 New Product i825y TYPICAL CHARACTERITIC 25 C, unless otherwise noted I - rain Current (A) V G =thru V I - rain Current (A) 8 T C = 25 C T C = 25 C 2 V G =3V V G =V, 2 V V - rain-to-ource Voltage (V) Output Characteristics 2 T C = - 55 C V G - Gate-to-ource Voltage (V) Transfer Characteristics.3 - On-Resistance (Ω) R (on) V G =.5V V G =V C - Capacitance (pf) C iss C oss C rss I - rain Current (A) On-Resistance vs. rain Current V - rain-to-ource Voltage (V) Capacitance. - Gate-to-ource Voltage (V) V G 8 2 I =A V =V V =5V V = 2 V R (on) - On-Resistance (Normalized) I = - A V G = - V V G = -.5 V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: Rev. A, 3-Oct-8 3
4 i825y New Product TYPICAL CHARACTERITIC 25 C, unless otherwise noted. T J = 5 C.8 I = A I - ource Current (A).. T J = 25 C - On-Resistance (Ω) R (on)...2 T J = 25 C V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage T J = 25 C. 2 8 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage.8 7 I =25µA. 3 Variance (V) V G(th)..2. I =5 ma Power (W) T J - Temperature ( C) Threshold Voltage... Time (s) ingle Pulse Power, Junction-to-Ambient Limited by R (on) * I- rain Current (A)... T A = 25 C ingle Pulse BV. V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area ms ms ms s s C ocument Number: Rev. A, 3-Oct-8
5 New Product i825y MOFET TYPICAL CHARACTERITIC 25 C, unless otherwise noted I - rain Current (A) T C - Case Temperature ( C) Current erating* Power (W) Power (W) T C - Case Temperature ( C) Power, Junction-to-Foot T A - Ambient Temperature ( C) Power erating, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: Rev. A, 3-Oct-8 5
6 i825y New Product TYPICAL CHARACTERITIC 25 C, unless otherwise noted uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:..5 P M t.2 t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 85 C/W 3. T JM -- T A =P M Z (t) thja. ingle Pulse. urface Mounted quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - uty Cycle =.5 Normalized Effective Transient Thermal Impedance ingle Pulse -3-2 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: Rev. A, 3-Oct-8
7 Package Information OIC (NARROW): 8-LEA JEEC Part Number: M E H 2 3 A.25 mm (Gage Plane) h x 5 C All Leads e B A L q. mm." MILLIMETER INCHE IM Min Max Min Max A A B C E e.27 BC.5 BC H h L q ECN: C-527-Rev. I, -ep- WG: 598 ocument Number: 792 -ep-
8 Application Note 82 RECOMMENE MINIMUM PA FOR O-8.72 (.39).28 (.7) APPLICATION NOTE.7 (.9).2 (.28).52 (3.8).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: Revision: 2-Jan-8
9 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VIHAY INTERTECHNOLOGY, INC. ALL RIGHT REERVE Revision: 8-Feb-7 ocument Number: 9
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