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1 Is Now Part of To learn more about ON emiconductor, please visit our website at ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 FM868 N-Channel hielded Gate PowerTrench MOFET V, 5 A, 3.2 mω Features hielded Gate MOFET Technology Max r (on) = 3.2 mω at V G = V, I = 67 A Max r (on) = 7.9 mω at V G = 6 V, I = 33 A 5% Lower Qrr than Other MOFET uppliers Lowers witching Noise/EMI ML Robust Package esign % UIL Tested RoH Compliant Top Pin Bottom General escription August 26 This N-Channel MV MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that incorporates hielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications Primary C-C MOFET ynchronous Rectifier in C-C and AC-C Motor rive olar Pin G FM868 N-Channel hielded Gate PowerTrench MOFET Power 56 G MOFET Maximum Ratings T A = 25 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage V V G Gate to ource Voltage ±2 V Thermal Characteristics rain Current -Continuous T C = 25 C (Note 5) 5 I -Continuous T C = C (Note 5) 95 -Continuous T A = 25 C (Note a) 2 A -Pulsed (Note 4) 775 E A ingle Pulse Avalanche Energy (Note 3) 486 mj Power issipation T C = 25 C 38 P Power issipation T A = 25 C (Note a) 2.7 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case.9 R θja Thermal Resistance, Junction to Ambient (Note a) 45 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM868 FM868 Power mm 3 units 26 Fairchild emiconductor Corporation FM868 Rev..
3 Electrical Characteristics T J = 25 C unless otherwise noted. ymbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV rain to ource Breakdown Voltage I = 25 μa, V G = V V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = 25 μa, referenced to 25 C 73 mv/ C I Zero Gate Voltage rain Current V = 8 V, V G = V μa I G Gate to ource Leakage Current V G = ±2 V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 37 μa V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient ynamic Characteristics witching Characteristics I = 37 μa, referenced to 25 C -8 mv/ C V G = V, I = 67 A r (on) tatic rain to ource On Resistance V G = 6 V, I = 33 A mω V G = V, I = 67 A, T J = 25 C g F Forward Transconductance V = 5 V, I = 67 A 44 C iss Input Capacitance pf V = 5 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance..8.6 Ω t d(on) Turn-On elay Time ns t r Rise Time V = 5 V, I = 67 A, 2 22 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω 3 48 ns t f Fall Time 7 4 ns Q g Total Gate Charge V G = V to V 6 84 nc Q g Total Gate Charge V G = V to 6 V V = 5 V, nc Q gs Gate to ource Charge I = 67 A 2 nc Q gd Gate to rain Miller Charge 2 nc Q oss Output Charge V = 5 V, V G = V 75 nc FM868 N-Channel hielded Gate PowerTrench MOFET rain-ource iode Characteristics V G = V, I = 2. A (Note 2).7.2 V ource to rain iode Forward Voltage V V G = V, I = 67 A (Note 2).8.3 t rr Reverse Recovery Time 44 7 ns I F = 33 A, di/dt = 3 A/μs Q rr Reverse Recovery Charge 9 27 nc t rr Reverse Recovery Time ns I F = 33 A, di/dt = A/μs Q rr Reverse Recovery Charge nc Notes:. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θca is determined by the user's board design. a) 45 C/W when mounted on a b) 5 C/W when mounted on a in 2 pad of 2 oz copper minimum pad of 2 oz copper. F F G F F G 2. Pulse Test: Pulse Width < 3 μs, uty cycle < 2.%. 3. E A of 486 mj is based on starting T J = 25 C; N-ch: L = 3 mh, I A = 8 A, V = V, V G = V. % test at L =. mh, I A = 58 A. 4. Pulsed Id please refer to Fig OA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. 26 Fairchild emiconductor Corporation FM868 Rev.. 2
4 Typical Characteristics T J = 25 C unless otherwise noted. I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE PULE URATION = 8 μs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) Figure. I = 67 A V G = V V G = V V G = 6.5 V V G = 6 V V G = 5.5 V V G = 5 V NORMALIZE RAIN TO OURCE ON-REITANCE V G = V PULE URATION = 8 μs UTY CYCLE =.5% MAX I, RAIN CURRENT (A) On-Region Characteristics Figure 2. Normalized On-Resistance vs. rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = 5 V V G = 5.5 V I = 67 A V G = 6 V V G = 6.5 V PULE URATION = 8 μs UTY CYCLE =.5% MAX T J = 25 o C T J = 25 o C V G, GATE TO OURCE VOLTAGE (V) FM868 N-Channel hielded Gate PowerTrench MOFET I, RAIN CURRENT (A) Figure 3. Normalized On- Resistance vs. Junction Temperature PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 25 o C T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) I, REVERE RAIN CURRENT (A) 3. Figure 4. V G = V T J = 5 o C On-Resistance vs. Gate to ource Voltage T J = 25 o C. T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. ource to rain iode Forward Voltage vs. ource Current 26 Fairchild emiconductor Corporation FM868 Rev.. 3
5 Typical Characteristics T J = 25 C unless otherwise noted. VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) I = 67 A Q g, GATE CHARGE (nc) Figure 7. V = 25 V V = 5 V V = 75 V 2 C rss f = MHz V G = V. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs. rain to ource Voltage T J = 25 o C T J = 25 o C T J = o C... t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) V G = 6 V V G = V C iss C oss R θjc =.9 o C/W T C, CAE TEMPERATURE ( o C) FM868 N-Channel hielded Gate PowerTrench MOFET I, RAIN CURRENT (A) 2 Figure 9. Unclamped Inductive witching Capability THI AREA I LIMITE BY r (on) μs INGLE PULE T J = MAX RATE ms R θjc =.9 o C/W CURVE BENT TO ms T C = 25 o C. MEAURE ATA ms. 5 V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area μs P(PK), PEAK TRANIENT POWER (W) 5 Figure. Maximum Continuous rain Current vs. Case Temperature t, PULE WITH (sec) Figure 2. ingle Pulse Maximum Power issipation INGLE PULE R θjc =.9 o C/W T C = 25 o C 26 Fairchild emiconductor Corporation FM868 Rev.. 4
6 Typical Characteristics T J = 25 C unless otherwise noted. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE 2 UTY CYCLE-ECENING ORER = P M.2. t t 2. NOTE: INGLE PULE Z θjc (t) = r(t) x R θjc R θjc =.9 o C/W Peak T J = P M x Z θjc (t) + T C uty Cycle, = t / t t, RECTANGULAR PULE URATION (sec) Figure 3. Junction-to-Case Transient Thermal Response Curve FM868 N-Channel hielded Gate PowerTrench MOFET 26 Fairchild emiconductor Corporation FM868 Rev.. 5
7 2X. C 5. PKG CL 8 5 A B (.4) (4.42) PKG LC 6. (4.63) (3.49) (6.6) KEEP OUT AREA 4X (.27) PIN # IICATOR 4 TOP VIEW 2X. C (.6) 8X (5.) EE ETAIL A LAN PATTERN RECOMMENATION. C IE VIEW..9 4X (.38).57±.5 4X (.35) 2X.65±. 3X ±. 5.±.. C A B.5 C.42±.5 8X 4.33±. 6.±..8 C (.2) CALE: 2:.5. NOTE: UNLE OTHERWIE PECIFIE A) PACKAGE TANAR REFERENCE: JEEC MO-24, IUE A, VAR. AA, B) ALL IMENION ARE IN MILLIMETER. C) IMENION O NOT INCLUE BURR OR MOL FLAH. MOL FLAH OR BURR OE NOT EXCEE.MM. ) IMENIONING AN TOLERANCING PER AME Y4.5M-29. E) IT I RECOMMENE TO HAVE NO TRACE OR VIA WITHIN THE KEEP OUT AREA. F) RAWING FILE NAME: PQFN8TREV. C EATING PLANE BOTTOM VIEW
8 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative
9 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Xsens: FM868
Applications. Bottom S S S. Pin 1 G D D D
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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