FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m
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1 FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination is Lead-free and RoH Compliant Top Bottom General escription This N-Channel MOFET is produced using ON emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application C - C Buck Converters Notebook battery power management Load switch in Notebook Pin G G 7 8 MLP 3.3x3.3 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage V V G Gate to ource Voltage ± V rain Current -Continuous (Package limited) T C = 5 C 6 I -Continuous T A = 5 C (Note a) 3.3 Thermal Characteristics -Pulsed E A ingle Pulse Avalanche Energy (Note 3) 58 mj Power issipation T P C = 5 C 9 Power issipation T A = 5 C (Note a).3 T J, T TG Operating and torage Junction Temperature Range -55 to +5 C A W R JC Thermal Resistance, Junction to Case 4.3 R JA Thermal Resistance, Junction to Ambient (Note a) 53 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FMC769 FMC769 MLP 3.3x3.3 3 mm units emiconductor Components Industries, LLC. October-7, Rev.3 Publication Order Number: FMC769/
2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 A, V G = V V BV T J Breakdown Voltage Temperature Coefficient I = 5 A, referenced to 5 C 6 mv/ C V = 4 V, V G = V I Zero Gate Voltage rain Current A T J = 5 C 5 I G Gate to ource Leakage Current V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 A V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = 5 A, referenced to 5 C -6 mv/ C V G = V, I = 3.3 A r (on) tatic rain to ource On Resistance V G = 4.5 V, I =.6 A m V G = V, I = 3.3 A, T J = 5 C 9.5. g F Forward Transconductance V = 5 V, I = 3.3 A 6 ynamic Characteristics C iss Input Capacitance 6 68 pf V = 5 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 65 pf R g Gate Resistance.9.4 witching Characteristics t d(on) Turn-On elay Time 9 8 ns t r Rise Time V = 5 V, I = 3.3 A, 4 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 33 ns t f Fall Time 3 ns Total Gate Charge V G = V to V 9 nc Q g(tot) Total Gate Charge V G = V to 4.5 V V = 5 V 4 nc Q gs Total Gate Charge I = 3.3 A 5 nc Q gd Gate to rain Miller Charge 3 nc rain-ource iode Characteristics V G = V, I = 3.3 A (Note ).86. V ource to rain iode Forward Voltage V V G = V, I =.9 A (Note ).75. t rr Reverse Recovery Time 4 38 ns I F = 3.3 A, di/dt = A/ s Q rr Reverse Recovery Charge 7 4 nc NOTE:. R JA is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 53 C/W when mounted on a in pad of oz copper b.5 C/W when mounted on a minimum pad of oz copper. Pulse Test: Pulse Width < s, uty cycle <. %. 3. E A of 58 mj is based on starting T J = 5 o C, L = mh, I A =.8 A, V = 7 V, V G = V. % test at L =. mh, I A = A.
3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE Figure. I = 3.3 A V G = V V G = V V G = 6 V V G = 4.5 V V G = 4 V PULE URATION = 8 s UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) V G = 3.5 V V G = 3 V NORMALIZE RAIN TO OURCE ON-REITANCE. V G = 6 V V G = V.5 I, RAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (m ) V G = 3.5 V I = 3.3 A PULE URATION = 8 s UTY CYCLE =.5% MAX V G = 4 V T J = 5 o C T J = 5 o C V G = 4.5 V PULE URATION = 8 s UTY CYCLE =.5% MAX V G, GATE TO OURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 s UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A) 6.. V G = V T J = 5 o C T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 3
4 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) IA, AVALANCHE CURRENT (A) I = 3.3 A Figure 7. V = 5 V V = V Q g, GATE CHARGE (nc) V = V f = MHz V G = V. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) 5 Limited by Package V G = 4.5 V C iss C oss C rss V G = V R JC = 5. o C/W T c, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 5 s ms ms THI AREA I LIMITE BY r (on) ms INGLE PULE. s T J = MAX RATE s R JA = 5 o C/W C T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R JA = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation 4
5 Typical Characteristics T J = 5 C unless otherwise noted r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE.. UTY CYCLE-ECENING ORER = INGLE PULE uty Cycle, = t / t t, RECTANGULAR PULE URATION (sec) Figure 3. Transient Thermal Response Curve P M t t NOTE: Z θja (t) = r(t) x R θja R θja = 5 C/W Peak T J = P M x Z θja (t) + T A 5
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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