INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. G IRGB8B6KPbF IRGS8B6KPbF IRGSL8B6KPbF C E n-channel PD - 9565B V CES = 6V I C = 19A t sc >1µs, T J =175 C V CE(on) typ. = 1.8V TO-22AB IRGB8B6KPbF D 2 Pak IRGS8B6KPbF TO-262 IRGSL8B6KPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 28 I C @ T C = 1 C Continuous Collector Current 19 I NOMINAL Nominal Current 8. A I CM Pulse Collector Current (Ref.Fig.C.T.5) 3 I LM Clamped Inductive Load current c 3 V GE Gate-to-Emitter Voltage ±2 V P D @ T C = 25 C Maximum Power Dissipation 167 W P D @ T C = 1 C Maximum Power Dissipation 83 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Storage Temperature Range, for 1 sec. 3 (.63 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT g.9 R θcs Case-to-Sink, flat, greased surface.5 C/W R θja Junction-to-Ambient, typical socket mount d 62 R θja Junction-to-Ambient (PCB Mount, Steady State)e Weight 1. g www.irf.com 1 1/25/21
IRGB/S/SL8B6KPbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.57 V/ C V GE = V, I C = 1mA (25 C-15 C) V CE(on) Collector-to-Emitter Voltage 1.8 2.2 I C = 8.A, V GE = 15V, T J = 25 C 5,6,7 2.2 2.5 V I C = 8.A, V GE = 15V, T J = 15 C 8,9,1 2.3 2.6 I C = 8.A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage 3.5.5 5.5 V CE = V GE, I C = 25µA 8,9,1, V GE(th) / T J Threshold Voltage temp. coefficient -9.5 mv/ C V CE = V GE, I C = 1mA (25 C-125 C) 11 gfe Forward Transconductance 3.7 S V CE = 5V, I C = 8.A, PW = 8µs I CES Zero Gate Voltage Collector Current 1. 15 V GE = V, V CE = 6V 2 5 µa V GE = V, V CE = 6V, T J = 15 C 8 132 V GE = V, V CE = 6V, T J = 175 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig. Q g Total Gate Charge (turn-on) 29 I C = 8.A 17 Q ge Gate-to-Emitter Charge (turn-on) 3.7 nc V CC = 8V CT1 Q gc Gate-to-Collector Charge (turn-on) 1 V GE = 15V E on Turn-On Switching Loss 16 268 I C = 8.A, V CC = V CT E off Turn-Off Switching Loss 16 268 µj V GE = 15V, R G = 5Ω, L = 1.1mH E tot Total Switching Loss 32 33 T J = 25 C f t d(on) Turn-On delay time 23 27 I C = 8.A, V CC = V t r Rise time 22 26 ns V GE = 15V, R G = 5Ω, L = 1.1mH CT t d(off) Turn-Off delay time 1 15 T J = 25 C t f Fall time 32 2 E on Turn-On Switching Loss 22 33 I C = 8.A, V CC = V CT E off Turn-Off Switching Loss 27 381 µj V GE = 15V, R G = 5Ω, L = 1.1mH 12,1 E tot Total Switching Loss 9 68 T J = 15 C f WF1,WF2 t d(on) Turn-On delay time 22 27 I C = 8.A, V CC = V 13,15 t r Rise time 21 25 ns V GE = 15V, R G = 5Ω, L = 1.1mH CT t d(off) Turn-Off delay time 18 198 T J = 15 C WF1 t f Fall time 56 WF2 C ies Input Capacitance V GE = V C oes Output Capacitance 38 pf V CC = 3V 16 C res Reverse Transfer Capacitance 16 f = 1.MHz RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = 15 C, I C = 3A, Vp = 6V V CC =5V,V GE = +15V to V,R G = 5Ω T J = 15 C, Vp = 6V, R G = 1Ω SCSOA Short Circuit Safe Operating Area 1 µs V CC =36V,V GE = +15V to V WF3 CT2 CT3 Notes to are on page 13. 2 www.irf.com
I C (A) I C A) I C (A) P tot (W) IRGB/S/SL8B6KPbF 35 175 3 15 25 125 2 1 15 75 1 5 5 25 2 6 8 1 12 1 16 18 2 6 8 1 12 1 16 18 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1 1 1 1 µs 1 1ms 1 1ms 1.1 DC.1 1 1 1 1 1 1 1 1 Fig. 3 - Forward SOA T C = 25 C; T J 15 C Fig. - Reverse Bias SOA T J = 15 C; V GE =15V www.irf.com 3
I CE (A) I CE (A) I CE (A) IRGB/S/SL8B6KPbF 35 3 25 2 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 35 3 25 2 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 15 15 1 1 5 5 1 2 3 5 6 1 2 3 5 6 Fig. 5 - Typ. IGBT Output Characteristics T J = - C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs 35 3 25 2 15 1 5 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 1 2 3 5 6 Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 8µs www.irf.com
I CE (A) IRGB/S/SL8B6KPbF 2 2 18 18 16 16 1 1 12 1 8 6 I CE =.A I CE = 8.A I CE = 16A 12 1 8 6 I CE =.A I CE = 8.A I CE = 16A 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 8 - Typical V CE vs. V GE T J = - C Fig. 9 - Typical V CE vs. V GE T J = 25 C 2 1 18 16 8 1 12 6 T J = 25 C T J = 15 C 1 8 6 I CE =.A I CE = 8.A I CE = 16A 2 T J = 15 C 2 T J = 25 C 5 1 15 2 V GE (V) 5 1 15 2 V GE (V) Fig. 1 - Typical V CE vs. V GE T J = 15 C Fig. 11 - Typ. Transfer Characteristics V CE = 36V; tp = 1µs www.irf.com 5
Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRGB/S/SL8B6KPbF 6 1 5 td OFF 3 E OFF 1 2 t F 1 E ON td ON t R 5 1 15 2 1 5 1 15 2 I C (A) I C (A) Fig. 12 - Typ. Energy Loss vs. I C T J = 15 C; L=1.1mH; V CE = V, R G = 5Ω; V GE = 15V Fig. 13 - Typ. Switching Time vs. I C T J = 15 C; L=1.1mH; V CE = V R G = 5Ω; V GE = 15V 7 1 6 E ON 5 E OFF 1 td OFF 3 2 1 t F td ON 1 t R 1 2 3 5 1 1 2 3 5 R G (Ω) R G (Ω) Fig. 1 - Typ. Energy Loss vs. R G T J = 15 C; L=1.1mH; V CE = V I CE = 8.A; V GE = 15V Fig. 15 - Typ. Switching Time vs. R G T J = 15 C; L=1.1mH; V CE = V I CE = 8.A; V GE = 15V 6 www.irf.com
Thermal Response ( Z thjc ) Capacitance (pf) V GE (V) IRGB/S/SL8B6KPbF 1 Cies 16 Coes 1 12 3V 1 Cres 1 V 8 1 6 2 1 1 1 1 5 1 15 2 25 3 Q G, Total Gate Charge (nc) Fig. 16- Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 17 - Typical Gate Charge vs. V GE I CE = 8.A; L = 6µH 1 1 D =.5.1.1.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 1 R 2 τ J τ J τ 1 τ τ 2 1 τ 2 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec).91.19.9.1153 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7
IRGB/S/SL8B6KPbF L 1K DUT L VCC 8 V + - Rg DUT 8V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver diode clamp / DUT L DC DUT 36V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T. - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com
IRGB/S/SL8B6KPbF 6 12 6 2 5 tf Vce 1 5 tr Vce 2 Vce (V) 3 2 9% Ice 5% Vce 5% Ice 8 6 Ice (A) Vce (V) 3 2 Ice 9% Ice 1% Ice 16 12 8 Ice (A) 1 Ice 2 1 5% Vce -1 Eoff Loss -2 -.2..6.8 1 Time (us) Fig. WF1- Typ. Turn-off Loss Waveform @ T J = 15 C using Fig. CT. -2 Eon Loss -1 -.3.5.7.9 Time (us) Fig. WF2- Typ. Turn-on Loss Waveform @ T J = 15 C using Fig. CT. 8 35 3 6 25 Vce (V) 2 Ice (A) 15 1 2 5. 1. 2. 3.. 5. Time (us) Fig. WF3- Typ. S.C Waveform @ T C = 15 C using Fig. CT.3 www.irf.com 9
IRGB/S/SL8B6KPbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$1,5) /27& 2'( $66(%/('21::,17+($66(%/</,1(& Note: "P" in assembly line position indicates "Lead-Free",17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(& TO-22AB package is not recommended for Surface Mount Application. 1 www.irf.com
IRGB/S/SL8B6KPbF D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7+,6,6$1,5)6:,7+ $66(%/('21::,17+($66(%/</,1(/ 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< )6 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( www.irf.com 11
IRGB/S/SL8B6KPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7+,6,6$1,5// $66(%/('21::,17+($66(%/</,1(& 1RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( <($5 :((. /,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( 12 www.irf.com
IRGB/S/SL8B6KPbF D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59).1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.15).32 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 1.9 (.29) 1.7 (.21) 11.6 (.57) 11. (.9) 16.1 (.63) 15.9 (.626) 1.75 (.69) 1.25 (.9) 15.2 (.69) 15.22 (.61) 2.3 (.957) 23.9 (.91).72 (.136).52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.5) 27. (1.79) 23.9 (.91) 33. (1.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA-18. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB.. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26. (1.39) 2. (.961) 3 3. (1.197) MAX. Notes: V CC = 8% (V CES ), V GE = 15V, L = 1µH, R G = 5Ω. This is only applied to TO-22AB package. ƒ This is applied to D 2 Pak, when mounted on 1" square PCB ( FR- or G-1 Material ). For recommended footprint and soldering techniques refer to application note #AN-99. Energy losses include "tail" and diode reverse recovery, using Diode HF3D6ACE. R θ is measured at T J of approximately 9 C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 925, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information.1/21 www.irf.com 13