TTH156DPI Tandem 6V HYPERAT BOOT DIODE MAJOR PRODUCT CHARACTERITIC I (AV) V RRM 15 A 6 V Tj (max) 15 C V (max).4 V I RM (typ.) 4.8 A t rr (typ.) 16 ns EATURE AND BENEIT EPECIALLY UITED A BOOT DIODE IN CONTINUOU MODE POWER ACTOR CORRECTOR AND HARD WITCHING CONDITION DEIGNED OR HIGH DI/DT OPERATION. HYPERAT RECOVERY CURRENT TO COMPETE WITH IC DEVICE. ALLOW DOWNIZING O MOET AND HEATINK INTERNAL CERAMIC INULATED DEVICE WITH EQUAL THERMAL CONDITION OR BOTH 3V DIODE INULATION (5V RM ) ALLOW PLACEMENT ON AME HEATINK A MOET AND LEXIBLE HEATINKING ON COMMON OR EPARATE HEATINK TATIC AND DYNAMIC EQUILIBRIUM O INTERNAL DIODE ARE WARRANTED BY DEIGN PACKAGE CAPACITANCE: C=16p DECRIPTION 1 DOP3I (insulated) The TURBOWITCH H is an ultra high performance diode composed of two 3V dice in series. TURBOWITCH H family drastically cuts losses in the associated MOET when run at high di /dt. 1 ABOLUTE RATING (limiting values) ymbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I (RM) RM forward current 6 A I M urge non repetitive forward current tp = 1 ms sinusoidal 13 A Ipeak Peak current waveform δ =.15 Tc = 1 C 35 A T stg torage temperature range -65 +15 C Tj Maximum operating junction temperature + 15 C October 3 - Ed: A 1/5
TTH156DPI THERMAL AND POWER DATA ymbol Parameter Test conditions Value Unit R th (j-c) Junction to case 1.6 C/W TATIC ELECTRICAL CHARACTERITIC (for both diodes) ymbol Parameter Tests Conditions Min. Typ. Max. Unit I R * Reverse leakage V R =V RRM Tj = 5 C µa current Tj = 15 C 3 V ** orward voltage drop I = 15A Tj=5 C 3.6 V Pulse test: * tp = 1ms, δ <% ** tp = 38µs, δ <% To evaluate the maximum conduction losses use the following equation: P=1.7xI (AV) +.47 x I (RM) Tj = 15 C 1.95.4 RECOVERY CHARACTERITIC ymbol Parameter Tests Conditions Min. Typ. Max. Unit t rr I RM Q rr time current softness factor charges I =.5 A Irr =.5A I R =1A I =1A di /dt = - 5A/µs V R =3V V R = 4 V I =15A di /dt = - A/µs Tj = 5 C 16 ns 35 Tj = 15 C 4.8 6. A.4-8 nc TURN-ON WITCHING CHARACTERITIC ymbol Parameter Tests Conditions Min. Typ. Max. Unit t fr V P orward recovery time orward recovery voltage I =15A di /dt = 1A/µs, V R =1.1xV max Tj = 5 C ns I =15A di /dt = 1 A/µs Tj = 5 C 6 V /5
TTH156DPI ig. 1: Conduction losses versus average current. ig. : orward voltage drop versus forward current. P(W) 55 δ =.1 δ =. 5 δ =.5 45 δ =.5 4 δ = 1 35 3 5 15 T 1 5 I (AV) (A) δ=tp/t tp 4 6 8 1 1 14 16 18 13 1 11 1 9 8 7 6 5 4 3 1 I M(A) (typical values) (maximum values) T j=5 C (maximum values) V M(V) 1 3 4 5 6 7 8 ig. 3: Relative variation of thermal impedance junction to case versus pulse duration. ig. 4: Peak reverse recovery current versus di /dt 1. Z th(j-c) /Rth(j-c) I RM(A).9 18 V R=4V I = x I(AV).8 16 I=I (AV).7.6.5 δ =.5 14 1 1 I =.5 x I(AV) I =.5 x I(AV).4 δ =. 8.3..1. δ =.1 ingle pulse t (s) p δ=tp/t 1.E-3 1.E- 1.E-1 1.E+ T tp 6 4 4 6 8 1 ig. 5: time versus di /dt ig. 6: charges versus di / dt 7 6 5 4 3 1 t (ns) rr I = x I(AV) I=I (AV) I =.5 x I(AV) V R=4V 4 6 8 1 4 18 16 14 1 1 8 6 4 Q (nc) rr V R=4V I = x I(AV) I=I (AV) I =.5 x I(AV) 4 6 8 1 3/5
TTH156DPI ig. 7: oftness factor versus di /dt (typical values). ig. 8: Relative variations of dynamic parameters versus junction temperature..8.7.6 I=I (AV) V R=4V.5.5. 1.75 1.5 I=I (AV) V R=4V Reference:.5 1.5 1..4.3. 4 6 8 1.75.5.5 IRM T ( C) j. 5 5 75 1 15 ig. 9: Transient peak forward voltage versus di /dt ig. 1: orward recovery time versus di /dt 1 11 1 9 8 7 6 5 4 3 1 V P(V) I=I (AV) 5 1 15 5 3 35 4 45 5 35 3 5 15 1 5 t (ns) fr I=I (AV) V R=1.1 x V max. 1 3 4 5 ig. 11: Junction capacitance versus reverse voltage applied 1 C(p) =1MHz V OC=3mVRM T j=5 C 1 V (V) R 1 1 1 1 1 4/5
TTH156DPI PACKAGE MECHANICAL DATA DOP3I DIMENION RE. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6.173.181 B 1.45 1.55.57.61 C 14.35 15.6.565.614 D.5.7..8 E.7.9.16.114 15.8 16.5.6.65 G.4 1.1.815.831 H 15.1 15.5.594.61 K 3.4 3.65.134.144 L 4.8 4.17.161.164 N 1.8 11.3.45.444 P 1. 1.4.47.55 R 4.6 typ..181 typ. Ordering code Marking Package Weight Base qty Delivery mode TTH156DPI TTH156DPI DOP3I 4.46 g. 3 Tube Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, TMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TMicroelectronics. pecifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. TMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of TMicroelectronics. The T logo is a registered trademark of TMicroelectronics. All other names are the property of their respective owners. 3 TMicroelectronics - All rights reserved. TMicroelectronics GROUP O COMPANIE Australia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - ingapore - pain - weden - witzerland - United Kingdom - United tates www.st.com 5/5