Standard Avalanche Sinterglass Diode Features Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications Rectification, general purpose 949539 Mechanical Data Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-75, Method 226 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part Type differentiation Package BYW52 V R = 2 V; I FAV = 2 A SOD-57 BYW53 V R = 4 V; I FAV = 2 A SOD-57 BYW54 V R = 6 V; I FAV = 2 A SOD-57 BYW55 V R = 8 V; I FAV = 2 A SOD-57 BYW56 V R = V; I FAV = 2 A SOD-57 Absolute Maximum Ratings Parameter Test condition Part Symbol Value Unit Reverse voltage = Repetitive see electrical characteristics BYW52 V R = V RRM 2 V peak reverse voltage BYW53 V R = V RRM 4 V BYW54 V R = V RRM 6 V BYW55 V R = V RRM 8 V BYW56 V R = V RRM V Peak forward surge current t p = ms, half sinewave I FSM 5 A Repetitive peak forward current I FRM 2 A Average forward current ϕ = 8 I FAV 2 A Pulse avalanche peak power t p = 2 µs half sine wave, T j = 75 C P R W
VISHAY Parameter Test condition Part Symbol Value Unit Pulse energy in avalanche mode, non repetitive (inductive load switch off) I (BR)R = A, T j = 75 C E R 2 mj i 2 * t-rating i 2 *t 8 A 2 *s Junction and storage T j = T stg - 55 to + 75 C temperature range Maximum Thermal Resistance Parameter Test condition Symbol Value Unit Junction ambient l = mm, T L = constant R thja 45 K/W on PC board with spacing 25 mm R thja K/W Electrical Characteristics Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = A V F.9. V Reverse current V R = V RRM I R. µa V R = V RRM, T j = C I R 5 µa Breakdown voltage I R = µa, t p /T =., t p =.3 ms V (BR) 6 V Diode capacitance V R = 4 V, f = MHz C D 8 pf Reverse recovery time I F =.5 A, I R = A, i R =.25 A t rr 4 µs I F = A, di/dt = 5 A/µs, V R = 5 V t rr 4 µs Reverse recovery charge I F = A, di/dt = 5 A/µs Q rr 2 nc Typical Characteristics (T amb = 25 C unless otherwise specified) R thja Therm. Resist. Junction/Ambient (K/W) 94 9 2 8 6 4 2 l T L = constant l 5 5 2 25 3 l - Lead Length ( mm ) I Forward Current (A) F.. T j = 75 C T j =25 C.....2.4.6.8..2.4.6.8 635 V F Forward Voltage (V) Figure. Typ. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage 2
I FAV Average Forward Current( A ) 635 2.5 2..5..5 R thja = K/W PCB:d=25mm half sinewave R thja =45K/W l=mm. 2 4 6 8 2 4 6 8 T amb Ambient Temperature ( C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature P Reverse Power Dissipation ( mw ) R 6353 4 35 3 25 2 5 5 P R Limit @ % V R P R Limit @8%V R 25 5 75 25 5 75 T j Junction Temperature ( C ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature I Reverse Current (A) R C Diode Capacitance ( pf ) D 4 35 3 25 2 5 5 f=mhz 6352 25 5 75 25 5 75 T j Junction Temperature ( C ) 6354.... V R Reverse Voltage (V) Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Z thp Thermal Resistance forpulsecond.(k/w) t p /T =.5 t p /T =.2 t p /T =. t p /T =.5 t p /T =.2 V RRM = V, R thja = K/W t p /T =. T amb = C 5 4 3 2 2 I FRM Repetitive Peak 94 978 t p Pulse Length (s) Forward Current (A) Figure 7. Thermal Response T amb =6 C T amb =7 C T amb =25 C T amb =45 C 3
VISHAY Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 Cathode Identification 3.6 (.4)max. ISO Method E 94 9538.82 (.32) max. 26(.4) min. 4. (.56) max. 26(.4) min. 4
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()73 67 283, Fax number: 49 ()73 67 2423 5