INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive V CE (on) Temperature Coefficient. TO-247AD Package Lead-Free Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. IRGP3B6KD-EP www.irf.com 1 2/27/6 G C E n-channel V CES = 6V I C = 3A, T C =1 C t sc > 1µs, T J =15 C V CE(on) typ. = 1.95V TO-247AD Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 6 I C @ T C = 1 C Continuous Collector Current 3 I CM Pulsed Collector Current 12 I LM Clamped Inductive Load Current 12 A I F @ T C = 25 C Diode Continuous Forward Current 6 I F @ T C = 1 C Diode Continuous Forward Current 3 I FM Diode Maximum Forward Current 12 V GE Gate-to-Emitter Voltage ±2 V P D @ T C = 25 C Maximum Power Dissipation 34 P D @ T C = 1 C Maximum Power Dissipation 122 W T J Operating Junction and -55 to +15 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1N m) Thermal Resistance PD - 9512A Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.41 R θjc Junction-to-Case - Diode 1.32 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6. g
IRGP3B6KD-EP Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.4 V/ C V GE = V, I C = 1.mA, (25 C-15 C) V CE(on) Collector-to-Emitter Saturation Voltage 1.95 2.35 V I C = 3A, V GE = 15V 2.4 2.75 I C = 3A,V GE = 15V, T J = 15 C V GE(th) Gate Threshold Voltage 3.5 4.5 5.5 V V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -1 mv/ C V CE = V GE, I C = 1.mA, (25 C-15 C) g fe Forward Transconductance 18 S V CE = 5V, I C = 5A, PW=8µs I CES Zero Gate Voltage Collector Current 5. 25 µa V GE = V, V CE = 6V 1 2 V GE = V, V CE = 6V, T J = 15 C V FM Diode Forward Voltage Drop 1.3 1.55 V I F = 3A 1.25 1.5 I F = 3A T J = 15 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Ref.Fig. 5, 6,7 9, 1,11 9,1,11 12 8 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 12 153 I C = 3A Qge Gate - Emitter Charge (turn-on) 14 21 nc V CC = 4V Qgc Gate - Collector Charge (turn-on) 44 66 V GE = 15V E on Turn-On Switching Loss 35 62 µj I C = 3A, V CC = 4V E off Turn-Off Switching Loss 825 955 V GE =15V, R G = 1Ω, L=2µH, E tot Total Switching Loss 1175 1575 L = 15nH S T J = 25 C t d(on) Turn-On Delay Time 46 6 I C = 3A, V CC = 4V t r Rise Time 28 39 V GE = 15V, R G = 1Ω L =2µH t d(off) Turn-Off Delay Time 185 2 ns L = 15nH, T S J = 25 C t f Fall Time 31 4 E on Turn-On Switching Loss 635 185 I C = 3A, V CC = 4V E off Turn-Off Switching Loss 115 135 µj V GE = 15V,R G = 1Ω, L =2µH E tot Total Switching Loss 1785 2435 L S = 15nH T J = 15 C t d(on) Turn-On Delay Time 46 6 I C = 3A, V CC = 4V t r Rise Time 28 39 V GE = 15V, R G = 1Ω L =2µH t d(off) Turn-Off Delay Time 25 235 ns L S = 15nH, T J = 15 C t f Fall Time 32 42 C ies Input Capacitance 175 V GE = V C oes Output Capacitance 16 pf V CC = 3V C res Reverse Transfer Capacitance 6 f = 1.MHz RBSOA Reverse Bias Safe Operting Area FULL SQUARE T J = 15 C, I C = 12A, Vp =6V V CC = 5V, V GE = +15V to V, R G=1Ω SCSOA Short Circuit Safe Operting Area 1 µs T J = 15 C, Vp =6V, R G = 1Ω V CC = 36V, V GE = +15V to V Erec Reverse Recovery energy of the diode 925 1165 µj T J = 15 C t rr Diode Reverse Recovery time 125 ns V CC = 4V, I F = 3A, L = 2µH I rr Diode Peak Reverse Recovery Current 43 48 A V GE = 15V,R G = 1Ω, L S = 15nH Ref.Fig. 23 CT.1 CT.4 CT.4 CT.4 13,15 WF1,WF2 CT.4 14, 16 WF1,WF2 22 4 CT.2 CT.3 WF.4 17,18,19 2,21 CT.4,WF.3 Notes: V CC = 8% (V CES ), V GE = 15V, L = 28µH, R G = 22Ω. Energy losses include "tail" and diode reverse recovery. 2 www.irf.com
I C (A) I C A) I C (A) P tot (W) IRGP3B6KD-EP 8 35 3 6 25 4 2 15 2 1 5 2 4 6 8 1 12 14 16 2 4 6 8 1 12 14 16 T C ( C) T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1 1 1 1 µs 1 1 1 µs 1 1ms DC 1.1 1 1 1 1 1 1 1 1 1 Fig. 3 - Forward SOA T C = 25 C; T J 15 C Fig. 4 - Reverse Bias SOA T J = 15 C; V GE =15V www.irf.com 3
I CE (A) I F (A) I CE (A) I CE (A) IRGP3B6KD-EP 6 5 4 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V 6 5 4 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V 3 3 2 2 1 1 1 2 3 4 5 1 2 3 4 5 Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs 6 5 4 V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V 6 5 4-4 C 25 C 15 C 3 3 2 2 1 1 1 2 3 4 5..5 1. 1.5 2. V F (V) Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics T J = 15 C; tp = 8µs tp = 8µs 4 www.irf.com
I CE (A) IRGP3B6KD-EP 2 2 18 18 16 16 14 14 12 1 8 I CE = 15A I CE = 3A I CE = 6A 12 1 8 I CE = 15A I CE = 3A I CE = 6A 6 6 4 4 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. 1 - Typical V CE vs. V GE T J = 25 C 2 25 18 16 2 T J = 25 C T J = 15 C 14 12 1 8 I CE = 15A I CE = 3A I CE = 6A 15 1 6 4 5 T J = 15 C 2 T J = 25 C 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 11 - Typical V CE vs. V GE Fig. 12 - Typ. Transfer Characteristics T J = 15 C V CE = 5V; tp = 1µs www.irf.com 5
Energy (µj) Swiching Time (ns) Swiching Time (ns) IRGP3B6KD-EP 3 1 25 Energy (µj) 2 td OFF E OFF 15 1 1 E ON td ON 5 t F t R 2 4 6 8 I C (A) 1 2 4 6 8 I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 15 C; L = 2µH; V CE = 4V R G = 1Ω; V GE = 15V Fig. 14 - Typ. Switching Time vs. I C T J = 15 C; L = 2µH; V CE = 4V R G = 1Ω; V GE = 15V 3 1 25 2 E OFF 1 td OFF 15 E ON 1 1 td ON t F 5 t R 25 5 75 1 125 1 25 5 75 1 125 R G (Ω) R G (Ω) Fig. 15 - Typ. Energy Loss vs. R G T J = 15 C; L = 2µH; V CE = 4V I CE = 3A; V GE = 15V Fig. 16 - Typ. Switching Time vs. R G T J = 15 C; L = 2µH; V CE = 4V I CE = 3A; V GE = 15V 6 www.irf.com
I RR (A) Q RR (nc) I RR (A) I RR (A) IRGP3B6KD-EP 5 5 45 R G = 4.7Ω 45 4 4 35 R G = 1Ω 35 3 R G = 22Ω 3 25 R G = 47Ω 25 2 15 R G = 1Ω 2 15 1 1 5 5 2 4 6 8 I F (A) 25 5 75 1 125 R G (Ω) Fig. 17 - Typical Diode I RR vs. I F T J = 15 C Fig. 18 - Typical Diode I RR vs. R G T J = 15 C; I F = 3A 5 5 45 4 4 22Ω 1Ω 4.7Ω 6A 35 3 3 1 Ω 47Ω 3A 25 2 2 15A 15 1 1 5 5 1 15 di F /dt (A/µs) 5 1 15 di F /dt (A/µs) Fig. 19- Typical Diode I RR vs. di F /dt V CC = 4V; V GE = 15V; I F = 3A; T J = 15 C Fig. 2 - Typical Diode Q RR V CC = 4V; V GE = 15V;T J = 15 C www.irf.com 7
Capacitance (pf) V GE (V) Energy (µj) IRGP3B6KD-EP 14 12 1 4.7Ω 1Ω 8 6 4 22Ω 47Ω 1 Ω 2 2 4 6 8 I F (A) Fig. 21 - Typical Diode E RR vs. I F T J = 15 C 1 16 1 Cies 14 12 1 2V 4V 8 1 Coes 6 4 Cres 2 1 2 4 6 8 1 25 5 75 1 125 Q G, Total Gate Charge (nc) Fig. 22- Typ. Capacitance vs. V CE Fig. 23 - Typical Gate Charge vs. V GE V GE = V; f = 1MHz I CE = 3A; L = 6µH 8 www.irf.com
IRGP3B6KD-EP 1 1 Thermal Response ( Z thjc ).1.1.1.1 D =.5.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 1 R 2 τ J τ J τ 1 τ τ 2 1 τ 2 Ci= τi/ri Ci= i/ri 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Ri ( C/W) τi (sec).2.428.29.1331 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) τ C τ 1 1 D =.5 Thermal Response ( Z thjc ).1.1.1.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci= i/ri 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) τ C τ Ri ( C/W) τi (sec).25.136.55.1645.567.37985 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9
IRGP3B6KD-EP L 1K DUT L VCC 8 V Rg DUT 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4x DC DUT 36V - 5V Rg DUT / DRIVER VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM Rg DUT VCC Fig.C.T.5 - Resistive Load Circuit 1 www.irf.com
IRGP3B6KD-EP 7 35 7 7 6 3 6 6 5 4 tf 9% I CE 25 2 5 4 TEST CURRENT 5 4 VCE (V) 3 2 1 5% V CE 5% I CE 15 1 5 ICE (A) VCE (V) 3 2 1 tr 9% test current 1% test current 5% V CE 3 2 1 ICE (A) -1 Eoff Loss -.2..2.4.6.8 Time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ T J = 15 C using Fig. CT.4 1-5 4-1 Eon Loss 15.9 16. 16.1 16.2 16.3 Time (µs) -1 Fig. WF2- Typ. Turn-on Loss Waveform @ T J = 15 C using Fig. CT.4 6 3-1 -2 t RR Q RR 3 2 1 5 4 I CE 25 2 VF (V) -3-4 -5-6 Peak I RR 1% Peak IRR -1-2 -3 IF (A) VCE (V) 3 2 1 V CE 15 1 5 ICE (A) -7 -.25 -.5.15.35-4 time (µs) Fig. WF3- Typ. Diode Recovery Waveform @ T J = 15 C using Fig. CT.4-5.. 5. 1. 15. time (µs) Fig. WF4- Typ. S.C Waveform @ T C = 15 C using Fig. CT.3 www.irf.com 11
IRGP3B6KD-EP TO-247AD Package Outline Dimensions are shown in milimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5)3( :,7+$66(%/< 3$5718%(5 /27&2'(,17(51$7,21$/ $66(%/('21:: 5(&7,),(5,5)3(,17+($66(%/</,1(+ Note: "P" in assembly line position indicates "Lead-Free" /2*2 $66(%/< Ã+ ÃÃÃÃÃÃÃÃÃÃÃ '$7(&2'( <($5 /27&2'( :((. /,1(+ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information. 2/6 12 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/