VISHAY BF9 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance Low input capacitance 3 G G 1 1 D S Electrostatic sensitive device. Observe precautions for handling. 1365 Applications Input- and mixer stages especially VHF- and UHFtuners. Mechanical Data Case: TO-5 Plastic case Weight: approx. 1 mg Marking: BF9 Pinning: 1 = Drain, = Source, 3 = Gate 1, = Gate Absolute Maximum Ratings T amb = 5 C, unless otherwise specified Parameter Test condition Symbol Value Unit Drain - source voltage V DS 1 V Drain current I D 3 ma Gate 1/Gate - source peak ± I G1/GSM 1 ma current Total power dissipation T amb 6 C P tot mw Channel temperature T Ch 15 C Storage temperature range T stg - 55 to + 15 C Maximum Thermal Resistance Parameter Test condition Symbol Value Unit Channel ambient 1) R thcha 5 K/W 1) on glass fibre printed board ( x 5 x 1.5) mm 3 plated with 35 µm Cu Document Number 57 Rev. 1.6, -Aug- 1
BF9 VISHAY Electrical DC Characteristics T amb = 5 C, unless otherwise specified Parameter Test condition Part Symbol Min Typ. Max Unit Drain - source breakdown I D = 1 µa, - V G1S = - V GS = V V (BR)DS 1 V voltage Gate 1 - source breakdown ± I G1S = 1 ma, V GS = V DS = ± V (BR)G1SS 7 1 V voltage Gate - source breakdown ± I GS = 1 ma, V G1S = V DS = ± V (BR)GSS 7 1 V voltage Gate 1 - source leakage current ± V G1S = 5 V, V GS = V DS = ± I G1SS 5 na Gate - source leakage current ± V GS = 5 V, V G1S = V DS = ± I GSS 5 na Drain current V DS = 15 V, V G1S =, V GS = V BF9 I DSS 1 ma BF9A I DSS 1.5 ma BF9B I DSS 9.5 1 ma Gate 1 - source cut-off voltage V DS = 15 V, V GS = V, I D = µa - V G1S(OFF).5 V Gate - source cut-off voltage V DS = 15 V, V G1S =, I D = µa - V GS(OFF). V Electrical AC Characteristics T amb = 5 C, unless otherwise specified V DS = V, I D = 1 ma, V GS = V, f = 1 MHz Parameter Test condition Symbol Min Typ. Max Unit Forward transadmittance y 1s 1 ms Gate 1 input capacitance C issg1.1.5 pf Gate input capacitance V G1S =, V GS = V C issg 1. pf Feedback capacitance C rss 5 ff Output capacitance C oss 1.5 pf Power gain G S = ms, G L =.5 ms, G ps db f = MHz G S = 3,3 ms, G L = 1 ms, G ps 16.5 db f = MHz AGC range V GS = to - V, f = MHz G ps db Noise figure G S = ms, G L =.5 ms, F 1 db f = MHz G S = 3,3 ms, G L = 1 ms, f = MHz F 1.5 db Document Number 57 Rev. 1.6, -Aug-
VISHAY BF9 Common Emitter S-Parameters V DS = V, V GS = V, Z = 5 Ω, T amb = 5 C, unless otherwise specified I D /ma f/mhz S11 S1 S1 S LOG ANG LOG ANG LOG ANG LOG ANG MAG MAG MAG MAG deg deg deg deg 5 1 -. -7. 6.1 16. -56.7 3. -. -3.6 -.1-15.3 5.7 156.3-5.61 76.6 -.6-7.3 3 -.31 -. 5.69 1. -7.7 7.9 -.13-1.6 -.56-3. 5. 13.9-6.19 65.6 -. -1. 5 -.7-37.3 5.17 11.5-5.6 6.6 -. -17.5 6-1.6 -.3.5 11.6-5. 55. -.36.5 7-1.59-5.9.5 1. -7.31 5.6 -.3-3. -. -5..5 9. -.19 63.3 -.9-6. 9 -. -6...6-5.37 1.5 -.5-3. 1 -. -71. 3.7 7. -9. 115.6 -.5-33. 11-3.39-7.3 3. 6.5 7.9 131.7 -.66-36. 1-3.9-5. 3.1 51.6 -.65 153. -.66 -.1 13 -.6-91. 3.1. -1.76 159. -.66-3.9 1 1 -. -.3 7. 16.5-55.67 3. -. -3.7 -.11-16.1 7.7 156.6-5.1 76. -.9-7. 3 -.35 -. 7.9 1. -7. 7.3 -.16-1. -.6-31.6 7.1 133.6-5.6 65.1 -.3-1.3 5 -.97-39. 6.93 1.5 -. 6. -.31 17.9 6-1.39-6. 6.59 111.9-5.5 5.5 -. -.9 7-1.76-53. 6.7 11.9-6.51 57. -. -.1 -.5-6.3 5.97 9.1-7.19 61. -.55-7.3 9 -.67-67.1 5.71. -9. 76. -.5-3.6 1-3.16-7.1 5.6 73.3 -.99 17.1 -.6-33. 11-3.7-1.1 5.7 63.3 -.3 13.3 -.73-37. 1 -.3 -..5 5.6-5.15 17.6 -.73 -.6 13 -.7-9..63 5. -.6 157.6 -.73 -.3 15 1 -.1 -..6 16.6-55.6 3. -.7-3.7 -.13-16..6 156. -9.61 76.3 -.1-7.5 3 -.37 -.5.6 15. -6.7 7.3 -. -11. -.66-3.3 7.96 13. -5.1 6.9 -.7-1. 5-1. -39. 7.66 1.9 -.3 59.7 -.36-1. 6-1.7-7. 7.33 11.3 -.65 5.3 -.7 -.9 7-1.5-5.1 6.9 1.6-5.7 57. -.53 -. -.36-61.3 6.6 9. -6.9 6. -.61-7. 9 -. -67.9 6. 3.7 -.1 71.9 -.6-3.6 1-3.3-75. 6.15 7.3 -.9 9.7 -.66-33.9 11 3.9 -. 5.75 6.6-7.93 11. -.77-37.3 1 -.9 -. 5.5 56. -5.75 11. -.79 -. 13-5.6-95. 5.3 6.9-3.5 153. -.79 -.5 Document Number 57 Rev. 1.6, -Aug- 3
BF9 VISHAY Typical Characteristics (T amb = 5 C unless otherwise specified) P tot -Total Power Dissipation ( mw ) 3 5 15 1 96 1159 5 6 1 1 1 16 T amb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature I Drain Current ( ma) D 117 V 5V 16 1 3V V 1V V G1S = 1V.6...6 1. 1. V GS Gate Source Voltage (V) Figure. Drain Current vs. Gate Source Voltage I Drain Current ( ma ) D 11 3 V GS =V V G1S =.6 V 5. V 15. V 1 5. V. V 6 1 V DS Drain Source Voltage (V) C issg1 Gate 1 Input Capacitance ( pf ) 113... 1.6 1... V GS =V f=1mhz.. 1.5 1..5..5 1. 1.5 V G1S Gate 1 Source Voltage (V) Figure. Drain Current vs. Drain Source Voltage Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage I Drain Current ( ma) D 116 6V 3V V 16 5V V 1V 1 V GS = 1V..... 1. V G1S Gate 1 Source Voltage (V) C issg Gate Input Capacitance ( pf ) 11... 1.6 1... V G1S = f=1mhz. 1 1 3 5 V GS Gate Source Voltage (V) Figure 3. Drain Current vs. Gate 1 Source Voltage Figure 6. Gate Input Capacitance vs. Gate Source Voltage Document Number 57 Rev. 1.6, -Aug-
VISHAY BF9 C oss Output Capacitance ( pf ) 115. 3.. 1.6. V GS =V V G1S = f=1mhz. 6 1 1 V DS Drain Source Voltage (V) Im ( y 11 ) ( ms ) 1 1 16 1 1 f = 13 MHz 1 MHz 1 7 MHz 6 MHz V GS =V I D =1mA 1 MHz f = 1...13 MHz 6 1 1 1 Re (y 11 ) ( ms ) Figure 7. Output Capacitance vs. Drain Source Voltage Figure 1. Short Circuit Input Admittance 1 f = MHz V 3V V 1 1V. V 3. V V GS =. V 5 1..5..5 1. 1.5 11 V G1S Gate 1 Source Voltage (V) S 1 TransducerGain( db ) Figure. Transducer Gain vs. Gate 1 Source Voltage Im ( y 1 ) ( ms ) 11 5 5 1 15 5 V GS =V f = 1...13 MHz I D =5mA 1 ma ma 3 1 MHz 35 13 MHz 1 16 3 Re (y 1 ) ( ms ) f = 1 MHz MHz 7 MHz Figure 11. Short Circuit Forward Transfer Admittance y 1s ForwardTransadmittance ( ms ) 119 3 16 1 f=1mhz 1V 1 16 I D Drain Current ( ma ) V GS =V 3V V Im ( y ) ( ms ) 1 9 f = 13 MHz 7 6 1 MHz 5 7 MHz 3 MHz V DS =15V V GS =V 1 I D =1 ma 1 MHz f = 1...13 MHz..5.5.75 1. 1.5 1.5 Re (y ) ( ms ) Figure 9. Forward Transadmittance vs. Drain Current Figure 1. Short Circuit Output Admittance Document Number 57 Rev. 1.6, -Aug- 5
BF9 VISHAY V DS = V, I D = 1 ma, V GS = V, Z = 5 Ω S 11 S 1 j. j.5 j j j5 15 1 7 9 6 1 3 13 MHz 1..5 1 5 1 1 1 j. 13 MHz 1 j5 15 3 196 j.5 j j 196 1 6 9 Figure 13. Input Reflection Coefficient Figure 15. Forward Transmission Coefficient S 1 S 1 9 6 j.5 j j 15 13 MHz 1 3 3 j. j5 1 1....5 1 5 1 1961 15 1 6 9 3 1963 j. j.5 j 13 MHz j j5 Figure 1. Reverse Transmission Coefficient Figure 16. Output Reflection Coefficient 6 Document Number 57 Rev. 1.6, -Aug-
VISHAY BF9 Package Dimensions in mm 96 1 Document Number 57 Rev. 1.6, -Aug- 7
BF9 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (197) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision /5/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-75 Heilbronn, Germany Telephone: 9 ()7131 67 31, Fax number: 9 ()7131 67 3 Document Number 57 Rev. 1.6, -Aug-