BFQ65. Silicon NPN Planar RF Transistor. Applications. Features. Absolute Maximum Ratings. Maximum Thermal Resistance

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Transcription:

Silicon NPN Planar R Transistor Applications R-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. eatures High power gain Low noise figures High transition frequence 3 2 94 9308 1 Marking: BQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base Absolute Maximum Ratings Parameters Symbol Value Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 10 V Emitter-base voltage V EBO 2.5 V Collector current I C 50 ma Total power dissipation T amb 60 C P tot mw Junction temperature T j 150 C Storage temperature range T stg 65 to +150 C Maximum Thermal Resistance Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 m Cu Parameters Symbol Maximum Unit R thja K/W 1 (5)

Electrical DC Characteristics T amb = 25 C Parameters / Test Conditions Symbol Min. Typ. Max. Unit Collector-emitter cut-off current V CE = 20 V, V BE = C I CES A Collector-base cut-off current V CB = 15 V, I E = 0 I CBO na Emitter-base cut-off current V EB = 1 V, I C = 0 I EBO 1 A Collector-emitter breakdown voltage I C = 1 ma, I B = 0 V (BR)CEO 10 V Collector-emitter saturation voltage I C = 50 ma, I B = 5 ma V CEsat 0.1 0.4 V DC forward current transfer ratio I C = 15 ma, V CE = 5 V h E 60 150 Electrical AC Characteristics T amb = 25 C Parameters / Test Conditions Symbol Min. Typ. Max. Unit Transition frequency V CE = 8 V, I C = 15 ma,, f = MHz f T 7.5 GHz Collector-base capacitance V CB = 8 V, f = 1 MHz C cb 0.4 p Collector-emitter capacitance V CE = 8 V, f = 1 MHz C ce 0.3 p Emitter-base capacitance V EB = 0.5 V, f = 1 MHz C eb 1.0 p Noise figure V CE = 8 V, Z S = 50 f = MHz I C = 5 ma I C = 15 ma V CE = 8 V, Z S = 50 f = 2 GHz I C = 5 ma I C = 15 ma Power gain I C = 15 ma, V CE = 8 V, f = 2 GHz, Z S = 50 Z L = Z Lopt G pe 8 Linear output voltage two tone intermodulation test V CE = 8 V, I C = 15 ma, d IM = 60, f 1 = 806 MHz, f 2 = 810 MHz, Z S = Z L = 50 V 01 = V 02 160 mv Third order intercept point V CE = 8 V, I C = 15 ma, f = MHz IP 3 26 m 1.3 1.7 2.5 3.0 2 (5)

3 (5) Common Emitter S-Parameters S 11 S 21 S 12 S 22 V CE /V I C /ma f/mhz deg deg deg deg 5 1 1 0.813 0.600 0.447 0.336 0.289 0.264 0.236 0.217 0.205 27.4 71.0.9 133.0 149.8 164.8 175.8 157.0 147.5 13.71 10.17 7.39 5.04 4.10 3.48 2.81 2.38 2.17 157.3 125.7 106.9 89.6 81.2 74.4 65.5 57.4 52.8 0.020 0.047 0.063 0.084 0.098 0.114 0.139 0.164 0.179 76.8 62.9 59.4 60.5 61.9 62.6 63.0 62.6 61.9 0.943 0.763 0.652 0.585 0.569 0.563 0.566 0.578 0.589 13.0 28.5 35.2 41.8 46.1 50.7 57.7 65.0 69.8 10 1 1 0.661 0.398 0.283 0.220 0.194 0.182 0.170 0.157 0.151 38.2 86.9 114.8 144.6 160.9 174.5 168.0 149.9 140.7 21.80 13.04 8.62 5.63 4.55 3.84 3.10 2.63 2.38 148.0 113.8 98.3 84.7 77.9 72.1 64.5 57.1 52.8 0.018 0.039 0.056 0.082 0.101 0.120 0.148 0.177 0.194 74.0 66.1 67.4 69.1 68.8 67.1 65.2 63.7 0.879 0.636 0.548 0.508 0.501 0. 0.507 0.521 0.531 18.1 31.3 35.2 41.1 45.7 50.5 65.8 70.8 8 15 1 1 0.551 0.304 0.216 0.177 0.160 0.153 0.144 0.133 45.6 96.1 122.9 152.2 167.4 178.8 163.0 144.9 136.3 26.77 14.11 9.04 5.82 4.69 3.96 3.20 2.71 2.47 142.0 108.4 94.9 82.6 76.4 71.1 63.9 56.8 52.7 0.016 0.036 0.054 0.102 0.123 0.152 0.182 0.200 72.9 71.5 72.3 71.9 71.0 68.7 66.0 64.2 0.828 0.576 0.505 0.477 0.474 0.476 0.484 0.498 0.508 21.1 31.3 34.1 40.3 45.2 50.3 58.3 66.2 71.2 20 1 1 0.472 0.250 0.183 0.157 0.145 0.141 0.133 0.134 0.128 51.3 102.7 129.7 156.6 171.8 174.2 159.7 140.9 135.5 29.92 14.61 9.22 5.92 4.76 4.02 3.25 2.74 2.50 137.7 105.4 92.9 81.6 75.6 70.5 63.5 56.6 52.5 0.015 0.035 0.054 0.104 0.124 0.155 0.185 0.203 72.8 72.4 73.9 74.2 73.1 71.8 66.6 64.4 0.788 0.542 0.484 0.462 0.461 0.463 0.472 0.487 0.496 22.8 30.9 33.3 39.5 44.7 50.1 66.2 71.3 30 1 1 0.366 0.197 0.158 0.147 0.142 0.139 0.132 60.5 114.6 141.2 165.8 178.5 169.5 154.0 138.7 130.5 33.31 15.00 9.32 5.95 4.79 4.04 3.26 2.76 2.51 132.4 102.0 90.8 80.2 74.3 69.3 62.5 55.6 51.6 0.014 0.034 0.053 0.104 0.125 0.156 0.187 0.204 74.0 75.0 76.3 75.7 74.4 72.8 69.9 66.7 64.5 0.736 0.506 0.461 0.447 0.446 0.450 0.460 0.476 0.486 24.7 29.8 32.0 38.9 44.3 49.8 66.4 71.7

Dimensions in mm 96 12244 4 (5)

Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, ax number: 49 (0)7131 67 2423 5 (5)