TCST/ TCST2 Transmissive Optical Sensor without Aperture Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 95 nm. The detector consists of a phototransistor. B) Applications Contactless optoelectronic switch, control and counter A) 15134 Features 95 1795 Compact construction A + E No setting efforts 2 case variations Polycarbonate case protected against ambient light Current Transfer Ratio (CTR) of typical 2.5% C 5.5.22 + C Top view Order Instruction Ordering Code Resolution (mm) / Aperture (mm) Remarks TCST A).6 / non No mounting flags TCST2 B).6 / non With two mounting flags Rev. A3, 8 Jun 99 1 (8) This datasheet has been downloaded from http://www.digchip.com at this page
TCST/ TCST2 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 s I FSM 3 A Power dissipation T amb 25C P V mw Junction temperature T j C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C ma Collector peak current t p /T =.5, t p 1 ms I CM 2 ma Power dissipation T amb 25C P V 15 mw Junction temperature T j C Coupler Parameter Test Conditions Symbol Value Unit Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to +85 C Storage temperature range T stg 55 to + C Soldering temperature 2 mm from case, t 5 s T sd 26 C Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 6 ma V F 1.25 1.5 V Junction capacitance V R =, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = 1 A V ECO 7 V Collector dark current V CE = 25 V, I F =, E = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector current V CE = 5 V, I F = 2 ma I C.25.5 ma Collector emitter saturation I F = 2 ma, I C = 25 A V CEsat.4 V voltage Resolution, path of the shutter crossing the radiant sensitive zone I Crel = 1/9%.6 mm 2 (8) Rev. A3, 8 Jun 99
TCST/ TCST2 Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Turn-on time V S = 5 V, I C = 1 ma, RL = (see figure 1) t on 15. s Turn-off time t off 1. s I F R G = 5 t p T =.1 t p = 5 s I F 5 + 5 V I C = 2 ma; Channel I Channel II adjusted through input amplitude Oscilloscope R L 1 M C L 2 pf I F I C % 9% t p 96 11698 t 95 189 Figure 1. Test circuit 1% t r t t d t s t f t on t off t p t d t r t on (= t d + t r ) pulse duration delay time rise time turn-on time t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 2. Switching times Rev. A3, 8 Jun 99 3 (8)
TCST/ TCST2 Typical Characteristics (T amb = 25 C, unless otherwise specified) 4 P tot Total Power Dissipation ( mw ) 3 2 Coupled device Phototransistor IR-diode I CEO Collector Dark Current, with open Base ( na ) 1 V CE =25V I F = 3 6 9 12 15 1 25 5 75 95 1188 T amb Ambient Temperature ( C ) 95 119 T amb Ambient Temperature ( C ) Figure 3. Total Power Dissipation vs. Ambient Temperature Figure 6. Collector Dark Current vs. Ambient Temperature. 1 V CE =5V I F Forward Current ( ma ). 1. 1. I C Collector Current ( ma ) 1.1.1.1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 96 11862 V F Forward Voltage ( V ).1.1 1 1 95 1183 I F Forward Current ( ma ) Figure 4. Forward Current vs. Forward Voltage Figure 7. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio 2. 1.5 1..5 V CE =5V I F =2mA 25 25 5 75 I C Collector Current ( ma ) 1 1.1.1.1 1 1 I F =5mA 2mA 1mA 5mA 2mA 95 1189 T amb Ambient Temperature ( C ) 95 1184 V CE Collector Emitter Voltage ( V ) Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Current vs. Collector Emitter Voltage 4 (8) Rev. A3, 8 Jun 99
TCST/ TCST2 CTR Current Transfer Ratio ( % ) 1 1 V CE =5V.1.1 1 1 95 1185 I F Forward Current ( ma ) I Crel Relative Collector Current 15141 11 9 8 7 s 6 5 4 3 2 1.5.4.3.2.1..1.2.3.4.5 s Displacement ( mm ) Figure 9. Current Transfer Ratio vs. Forward Current Figure 11. Relative Collector Current vs. Displacement t on / t off Turn on / Turn off Time ( s ) 2 15 1 5 Non Saturated Operation V S =5V R L = 2 4 6 8 95 1186 I C Collector Current ( ma ) t on t off 1 Figure 1. Turn on / off Time vs. Collector Current Rev. A3, 8 Jun 99 5 (8)
TCST/ TCST2 Dimensions of TCST in mm 96 1299 6 (8) Rev. A3, 8 Jun 99
TCST/ TCST2 Dimensions of TCST2 in mm 96 1298 Rev. A3, 8 Jun 99 7 (8)
TCST/ TCST2 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()7131 67 2831, Fax number: 49 ()7131 67 2423 8 (8) Rev. A3, 8 Jun 99