Optocoupler, Photodarlington Output Features High Isolation Test Voltage 5300 V RMS Standard Plastic DIP-4 Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 4 C Agency Approvals UL - File No. E52744 System Code H or J BSI IEC60950 IEC60065 i179057 C 2 3 E e3 Pb Pb-free Description The SFH612A and SFH655A are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington detector. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information Part Remarks SFH612A CTR > 200 %, DIP-4 SFH655A CTR > 600 %, DIP-4 SFH655A-X009 CTR > 600 %, SMD-4 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Peak reverse V RM 6.0 V Forward continuous current I F 60 ma Surge forward current t p 10 µs I FSM 2.5 A Derate linearly from 25 C 1.33 mw/ C Power dissipation P diss 100 mw 1
Output Parameter Test condition Symbol Value Unit Collector-emitter breakdown BV CEO 55 V Emitter-collector breakdown BV ECO 6.0 V Collector (load) current I C 125 ma Derate linearly from 25 C 2.00 mw/ C Power dissipation P diss 150 mw Coupler Parameter Test condition Symbol Value Unit Derate linearly from 25 C 3.33 mw/ C Total power dissipation P tot 250 mw Isolation test between input and output, climate acc. to IEC 60068-1:1988 t = 1.0 s V ISO 5300 V RMS Creepage distance 7.0 mm Clearance 7.0 mm Comparative tracking index acc. to DIN IEC 112/VDE 0303, part 1:06-84 175 Isolation resistance V IO = 500 V, T amb = 25 C R IO 10 12 Ω V IO = 500 V, T amb = 100 C R IO 10 11 Ω Storage temperature range T stg - 55 to + 150 C Operating temperature range T amb - 55 to + 100 C Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm 260 C Electrical Characteristics T amb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit Forward I F = 10 ma V F 1.15 1.5 V Reverse current V R = 6.0 V I R 0.02 10 µa Capacitance V R = 0, f = 1.0 MHz C O 14 pf Output Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown I CE = 100 µa BV CEO 55 V Emitter-collector breakdown I EC = 10 µa BV ECO 6.0 V Collector-emitter dark current V CE = 40 V I CEO 12 400 na Collector-emitter capacitance V CE = 0 V, f=1.0 MHz C CE 13.5 pf 2
Coupler SFH612A/ SFH655A Parameter Test condition Part Symbol Min Typ. Max Unit Collector-emitter saturation I F = 1.0 ma, I C = 2.0 ma SFH612A V CEsat 1.0 V I F = 20 ma, I C = 5.0 ma SFH655A V CEsat 1.0 V Coupling capacitance V I-O = 0 V, f = 1.0 MHz C C 0.45 pf Current Transfer Ratio Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio I F = 1.0 ma, V CE = 2.0 V SFH612A CTR 200 % SFH655A CTR 600 % Switching Characteristics Parameter Test condition Part Symbol Min Typ. Max Unit Turn-on time (Fig. 10, Test Circuit 1) Turn-off time (Fig. 10, Test Circuit 1) Rise time (Fig. 10, Test Circuit 1) Fall time (Fig. 10, Test Circuit 1) Turn-on time (Fig. 11, Test Circuit 2) Turn-off time (Fig. 11, Test Circuit 2) Rise time (Fig. 11, Test Circuit 2) Fall time (Fig. 11, Test Circuit 2) V CC = 10 V, I C = 2.0 ma, V CC = 10 V, I C = 2.0 ma, V CC = 10 V, I C = 2.0 ma, V CC = 10 V, I C = 2.0 ma, V CC = 2.0 V, I C = 10 ma, V CC = 2.0 V, I C = 10 ma, V CC = 2.0 V, I C = 10 ma, V CC = 2.0 V, I C = 10 ma, SFH612A t on 16 µs SFH612A t off 15 µs SFH612A t r 14 µs SFH612A t f 14 µs SFH655A t on 31 µs SFH655A t off 55 µs SFH655A t r 27 250 µs SFH655A t f 56 200 µs Typical Characteristics (Tamb = 25 C unless otherwise specified) Forward Voltage (V) isfh612a_01 1.5 1.4 1.3 40 C 1.2 0 C 1.1 1.0 0.9 25 C 75 C 0.8 0.7 0.01 0.10 1.00 10.00 100.00 Forward Current, I F (ma) VCEsat (V) isfh612a_02 1.00 0.95 I F = 20 ma, I C = 5.0 ma 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 40 20 0 20 40 60 80 100 Temperature, T A ( C) Figure 1. Forward Voltage vs. Forward Current Figure 2. Collector Emitter Saturation Voltage vs. Temperature 3
1.2 IF = 1.0 ma, VCE = 2.0 V 120 100 IF=10 ma Normalized CTR 1.0 0.8 IC (ma) 80 60 40 20 IF=1 ma IF=5 ma IF=0.5 ma isfh612a_03 0.6 40 20 0 20 40 60 80 100 Temperature, TA ( C) isfh612a_06 0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VCEsat(V) Figure 3. Normalized CTR vs. Temperature Figure 6. Collector Current vs. Collector-Emitter Saturation Voltage Normalized CTR isfh612a_04 1.80 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 I = 1.0 ma, VCE = 2.0 V, F 0.00 0.01 0.1 1.0 10 100 Forward Current, IF (ma) ICEO (na) isfh612a_07 104 10 3 10 2 10 1.0 100 C 75 C 50 C 25 C 0 C 25 C 25 C 0.1 0 10 20 30 40 50 60 V CE (V) Figure 4. Normalized CTR vs. Forward Current Figure 7. Collector-Emitter Dark Current vs. Collector-Emitter Voltage over Temperature I C (ma) 1000.0 isfh612a_05 100.0 10.0 1.0 0.1 I F =10 ma I F =5 ma I F =2 ma I F =0.5 ma I F =1.5 ma I F =1 ma 0 1 2 3 4 5 6 7 8 9 10 VCE (V) Time Switching, µs isfh612a_08 10 3 I C = 2.0 ma, V CC = 10 V (SFH612A) 10 2 T on T off T rise T fall 10 10 2 10 3 10 4 Load Resistance, R L (ohm) Figure 5. Collector Current vs. Collector Emitter Voltage Figure 8. Switching Time vs. Load Resistor 4
10 IC = 10 ma, VCE = 2.0 V (SFH655A) Time Switching, µs 102 t fall t on t off t rise isfh612a_09 100 102 103 104 Load Resistance, RL (Ω) Figure 9. Switching Time vs. Load Resistor I F V CC IF VO 90% 10% R E V OUT t R t ON t OFF tf Circuit 1 Waveform 1 isfh612a_10 Figure 10. Switching Time Test Circuit and Waveforms I F V CC R L V 10% CE 90% Input Pulse Output Pulse t R t F t ON t OFF Circuit 2 Waveform 2 isfh612a_11 Figure 11. Switching Time Test Circuit and Waveforms 5
Package Dimensions in Inches (mm) 2 1 pin one ID.255 (6.48).268 (6.81) ISO Method A 3 4.179 (4.55).190 (4.83).030 (.76).045 (1.14).031 (.79) typ..050 (1.27) typ..300 (7.62) typ. i178027 4 typ..018 (.46).022 (.56).130 (3.30).150 (3.81).020 (.508 ).035 (.89).050 (1.27).100 (2.54) 10 3 9.008 (.20).012 (.30).230 (5.84).250 (6.35).110 (2.79).130 (3.30) Option 9.375 (9.53).395 (10.03).300 (7.62) ref..0040 (.102).0098 (.249).012 (.30) typ..020 (.51).040 (1.02).315 (8.00) min. 15 max. 18449 6
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