INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature co-efficient G Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low V CE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation Applications U.P.S. Welding Solar Inverter IRG7PH42UDPbF IRG7PH42UD-EP 1 www.irf.com C E n-channel G C E TO-247AC IRG7PH42UDPbF V CES = 12V I C = 45A, T C = 1 C T J(max) = 15 C V CE(on) typ. = 1.7V TO-247AD IRG7PH42UD-EP Induction Heating G C E Gate Collector Emitter Absolute Maximum Ratings C C G C E Parameter Max. Units V CES Collector-to-Emitter Voltage 12 V I C @ T C = 25 C Continuous Collector Current (Silicon Limited) 85g I C @ T C = 1 C Continuous Collector Current (Silicon Limited) 45 I NOMINAL Nominal Current 3 I CM Pulse Collector Current, V GE = 15V 9 A I LM Clamped Inductive Load Current, V GE = 2V c 12 I F @ T C = 25 C Diode Continous Forward Current 85 I F @ T C = 1 C Diode Continous Forward Current 45 I FM Diode Maximum Forward Current d 12 V GE Continuous Gate-to-Emitter Voltage ±3 V P D @ T C = 25 C Maximum Power Dissipation 32 W P D @ T C = 1 C Maximum Power Dissipation 13 T J Operating Junction and -55 to +15 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance PD - 97391B Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) f.39 R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) f.56 C/W R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 1/26/9
IRG7PH42UDPbF/IRG7PH42UD-EP Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V, I C = 1µA e V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.18 V/ C V GE = V, I C = 2.mA (25 C-15 C) V CE(on) Collector-to-Emitter Saturation Voltage 1.7 2. I C = 3A, V GE = 15V, T J = 25 C 2.1 V I C = 3A, V GE = 15V, T J = 15 C V GE(th) Gate Threshold Voltage 3. 6. V V CE = V GE, I C = 1.mA V GE(th) / TJ Threshold Voltage temp. coefficient -14 mv/ C V CE = V GE, I C = 1.mA (25 C - 15 C) gfe Forward Transconductance 32 S V CE = 5V, I C = 3A, PW = 8µs I CES Collector-to-Emitter Leakage Current 4.4 15 µa V GE = V, V CE = 12V 12 V GE = V, V CE = 12V, T J = 15 C V FM Diode Forward Voltage Drop 2. 2.4 V I F = 3A 2.2 I F = 3A, T J = 15 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±3V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 157 236 I C = 3A Q ge Gate-to-Emitter Charge (turn-on) 21 32 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 69 14 V CC = 6V E on Turn-On Switching Loss 215 2374 I C = 3A, V CC = 6V, V GE = 15V E off Turn-Off Switching Loss 1182 1424 µj R G = 1Ω, L = 2µH,T J = 25 C E total Total Switching Loss 3287 3798 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 25 34 t r Rise time 32 41 ns t d(off) Turn-Off delay time 229 271 t f Fall time 63 86 E on Turn-On Switching Loss 2978 I C = 3A, V CC = 6V, V GE =15V E off Turn-Off Switching Loss 1968 µj R G =1Ω, L=2µH, T J = 15 C e E total Total Switching Loss 4946 Energy losses include tail & diode reverse recovery t d(on) Turn-On delay time 19 t r Rise time 32 ns t d(off) Turn-Off delay time 29 t f Fall time 154 C ies Input Capacitance 3338 pf V GE = V C oes Output Capacitance 124 V CC = 3V C res Reverse Transfer Capacitance 75 f = 1.Mhz T J = 15 C, I C = 12A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp =12V Rg = 1Ω, V GE = +2V to V Erec Reverse Recovery Energy of the Diode 1475 µj T J = 15 C t rr Diode Reverse Recovery Time 153 ns V CC = 6V, I F = 3A I rr Peak Reverse Recovery Current 34 A Rg = 1Ω, L =1.mH Notes: V CC = 8% (V CES ), V GE = 2V, L = 22µH, R G = 1Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. R θ is measured at T J of approximately 9 C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 www.irf.com
I C (A) I C (A) I C (A) Load Current ( A ) P tot (W) 6 5 4 IRG7PH42UDPbF/IRG7PH42UD-EP For both: Duty cycle : 5% Tj = 15 C Tsink = 9 C Gate drive as specified Power Dissipation = 95W 3 2 Square wave: 6% of rated voltage I 1 Ideal diodes 1.1 1 1 1 f, Frequency ( khz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 35 8 3 6 25 2 4 15 2 1 5 Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 25 5 75 1 125 15 175 T C ( C) 1 2 4 6 8 1 12 14 16 T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature 1 1 1µsec 1 DC 1µsec 1 Tc = 25 C 1msec Tj = 15 C Single Pulse.1 1 1 1 1 1 Fig. 3 - Forward SOA T C = 25 C, T J 15 C; V GE =15V 1 1 1 1 1 1 Fig. 4 - Reverse Bias SOA T J = 15 C; V GE = 2V www.irf.com 3
I CE (A) I F (A) I CE (A) I CE (A) IRG7PH42UDPbF/IRG7PH42UD-EP 12 1 8 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 12 1 8 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 6 6 4 4 2 2 2 4 6 8 1 2 4 6 8 1 Fig. 5 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs Fig. 6 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8µs 12 12 V GE = 18V 1 8 VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 1 8-4 C 25 C 15 C 6 6 4 4 2 2 2 4 6 8 1. 1. 2. 3. 4. 5. 6. V F (V) Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 8µs 12 Fig. 8 - Typ. Diode Forward Characteristics tp = 8µs 12 1 1 8 6 I CE = 15A I CE = 3A I CE = 6A 8 6 I CE = 15A I CE = 3A I CE = 6A 4 4 2 2 4 8 12 16 2 V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C 4 8 12 16 2 V GE (V) Fig. 1 - Typical V CE vs. V GE T J = 25 C 4 www.irf.com
Energy (µj) Swiching Time (ns) Swiching Time (ns) I CE, Collector-to-Emitter Current (A) IRG7PH42UDPbF/IRG7PH42UD-EP 12 12 1 1 8 8 6 4 I CE = 15A I CE = 3A I CE = 6A 6 4 T J = 25 C T J = 15 C 2 2 7 4 8 12 16 2 V GE (V) Fig. 11 - Typical V CE vs. V GE T J = 15 C 1 4 6 8 1 12 V GE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics V CE = 5V 6 5 t F Energy (µj) 4 td OFF E ON 1 3 2 E OFF t R 1 td ON 1 1 2 3 4 5 6 1 2 3 4 5 6 I C (A) I C (A) Fig. 13 - Typ. Energy Loss vs. I C T J = 15 C; L = 2µH; V CE = 6V, R G = 1Ω; V GE = 15V 6 Fig. 14 - Typ. Switching Time vs. I C T J = 15 C; L = 2µH; V CE = 6V, R G = 1Ω; V GE = 15V 1 5 4 E ON 1 td OFF 3 E OFF 1 t F 2 t R td ON 1 1 2 4 6 8 1 2 4 6 8 1 R G (Ω) R G (Ω) Fig. 15 - Typ. Energy Loss vs. R G T J = 15 C; L = 2µH; V CE = 6V, I CE = 3A; V GE = 15V Fig. 16 - Typ. Switching Time vs. R G T J = 15 C; L = 2µH; V CE = 6V, I CE = 3A; V GE = 15V www.irf.com 5
Energy (µj) I RR (A) Q RR (nc) I RR (A) I RR (A) IRG7PH42UDPbF/IRG7PH42UD-EP 5 4 4 R G = 5.Ω 35 R G = 1Ω R G = 47Ω 3 3 2 R G = 1Ω 25 1 15 2 25 3 35 4 45 5 55 6 I F (A) 2 2 4 6 8 1 R G (Ω) 4 Fig. 17 - Typ. Diode I RR vs. I F T J = 15 C 9 Fig. 18 - Typ. Diode I RR vs. R G T J = 15 C 8 6A 35 3 7 6 5 1Ω 47Ω 1Ω 3A 5.Ω 25 4 3 15A 2 2 4 6 8 1 12 di F /dt (A/µs) Fig. 19 - Typ. Diode I RR vs. di F /dt V CC = 6V; V GE = 15V; I F = 3A; T J = 15 C 2 2 4 6 8 1 12 14 di F /dt (A/µs) Fig. 2 - Typ. Diode Q RR vs. di F /dt V CC = 6V; V GE = 15V; T J = 15 C 35 3 25 R G = 5.Ω R G = 1Ω R G = 47Ω R G = 1Ω 2 15 1 5 15 2 25 3 35 4 45 5 55 6 I F (A) Fig. 21 - Typ. Diode E RR vs. I F T J = 15 C 6 www.irf.com
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRG7PH42UDPbF/IRG7PH42UD-EP 1 16 Cies 14 12 V CES = 6V V CES = 4V 1 1 8 1 Coes 6 4 Cres 2 1 1 2 3 4 5 6 2 4 6 8 1 12 14 16 18 Q G, Total Gate Charge (nc) Fig. 22 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz 1 Fig. 23 - Typical Gate Charge vs. V GE I CE = 3A; L = 6µH Thermal Response ( Z thjc ).1.1.1 1 D =.5.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R 4.136.313.1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) τ 4 τ 4 τ C τ.1752.256.814.8349.31.431 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc D =.5.1.2.1.5 Thermal Response ( Z thjc ).1.1.2.1 R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec).1254.515.937.515.1889.1225.1511.18229
IRG7PH42UDPbF/IRG7PH42UD-EP L L 1K DUT VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT R = VCC ICM L -5V Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force 1K D1 22K C sense G force DUT.75µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 8 www.irf.com
IRG7PH42UDPbF/IRG7PH42UD-EP 9 9 9 9 8 7 6 tf 8 7 6 8 7 6 tr TEST CURRENT 8 7 6 VCE (V) 5 4 3 9% I CE 5% V CE 5 4 3 ICE (A) VCE (V) 5 4 3 9% test current 5 4 3 ICE (A) 2 1 5% I CE 2 1 2 1 1% test current 5% V CE 2 1 Eoff Loss -1 -.5.5 1 1.5 2 time(µs) -1 Eon Loss -1-1 9.4 9.6 9.8 1 1.2 time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 15 C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 15 C using Fig. CT.4 4 3 E REC 2 t RR 1 IF (A) -1-2 -3 Peak I RR 1% Peak IRR -4 -.25..25.5.75 1. time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ T J = 15 C using Fig. CT.4 www.irf.com 9
IRG7PH42UDPbF/IRG7PH42UD-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTDT6IDSAQ@" XDUC6TT@H7G` GPU8P9@$%$& DIU@SI6UDPI6G Q6SUIVH7@S 6TT@H7G@9PIXX"$! DIUC@6TT@H7G`GDI@C S@8UDAD@S GPBP,5)3( + 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 1 www.irf.com
IRG7PH42UDPbF/IRG7PH42UD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$5718%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information. 1/29 www.irf.com 11