ener Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization 94 9367 Mechanical Data Case: DO-35 Glass Case Weight: approx. 3 mg Packaging Codes/Options: TR / k per 3 " reel, 3k/box TAP / k per Ammopack (52 mm tape), 3k/box Absolute Maximum Ratings 25 C, unless otherwise specified Parameter condition Symbol Value Unit Power dissipation l = 4 mm, T L = 25 C P V 5 mw -current I P V /V ma Junction temperature T j 75 C Storage temperature range T stg - 65 to + 75 C Maximum Thermal Resistance 25 C, unless otherwise specified Parameter condition Symbol Value Unit Junction ambient l = 4 mm, T L = constant R thja 3 K/W Electrical Characteristics 25 C, unless otherwise specified Parameter condition Symbol Min Typ. Max Unit Forward voltage I F = 2 ma V F.5 V Rev. 2, 2-Juni-3
VISHAY Electrical Characteristics BX55C.. Partnumber ener Voltage Range ) V @ I T Dynamic Resistance r zjt @ I T, f = khz ) Tighter tolerances available on request: BX55A... ± % of V nom, BX55F... ± 3% of V nom r zjk @ I K, f = khz Temperature Coefficient I T TK V I K I R @ 25 C Reverse Leakage I R @ 5 C V Ω ma %/K ma µa V min max min max BX55C2V4 2.28 2.56 < 85 < 6 5 -.9 -.6 < 5 < BX55C2V7 2.5 2.9 < 85 < 6 5 -.9 -.6 < < 5 BX55C3V 2.8 3.2 < 85 < 6 5 -.8 -.5 < 4 < 4 BX55C3V3 3. 3.5 < 85 < 6 5 -.8 -.5 < 2 < 4 BX55C3V6 3.4 3.8 < 85 < 6 5 -.8 -.5 < 2 < 4 BX55C3V9 3.7 4. < 85 < 6 5 -.8 -.5 < 2 < 4 BX55C4V3 4 4.6 < 75 < 6 5 -.6 -.3 < < 2 BX55C4V7 4.4 5 < 6 < 6 5 -.5.2 <.5 < BX55C5V 4.8 5.4 < 35 < 55 5 -.2.2 <. < 2 BX55C5V6 5.2 6 <25 < 45 5 -.5.5 <. < 2 BX55C6V2 5.8 6.6 < < 2 5.3.6 <. < 2 2 BX55C6V8 6.4 7.2 < 8 < 5 5.3.7 <. < 2 3 BX55C7V5 7 7.9 < 7 < 5 5.3.7 <. < 2 5 BX55C8V2 7.7 8.7 < 7 < 5 5.3.8 <. < 2 6.2 BX55C9V 8.5 9.6 < < 5 5.3.9 <. < 2 6.8 BX55C 9.4.6 < 5 < 7 5.3. <. < 2 7.5 BX55C.4.6 < 2 < 7 5.3. <. < 2 8.2 BX55C2.4 2.7 < 2 < 9 5.3. <. < 2 9. BX55C3 2.4 4. < 26 < 5.3. <. < 2 BX55C5 3.8 5.6 < 3 < 5.3. <. < 2 BX55C6 5.3 7. < 4 < 7 5.3. <. < 2 2 BX55C8 6.8 9. < 5 < 7 5.3. <. < 2 3 BX55C2 8.8 2.2 < 55 < 22 5.3. <. < 2 5 BX55C22 2.8 23.3 < 55 < 22 5.4.2 <. < 2 6 BX55C24 22.8 25.6 < 8 < 22 5.4.2 <. < 2 8 BX55C27 25. 28.9 < 8 < 22 5.4.2 <. < 2 2 BX55C3 28 32 < 8 < 22 5.4.2 <. < 2 22 BX55C33 3 35 < 8 < 22 5.4.2 <. < 2 24 BX55C36 34 38 < 8 < 22 5.4.2 <. < 2 27 BX55C39 37 4 < 9 < 5 2.5.4.2.5 <. < 5 3 BX55C43 4 46 < 9 < 6 2.5.4.2.5 <. < 5 33 BX55C47 44 5 < < 7 2.5.4.2.5 <. < 5 36 BX55C5 48 54 < 25 < 7 2.5.4.2.5 <. < 39 BX55C56 52 6 < 35 < 2.5.4.2.5 <. < 43 BX55C62 58 66 < 5 < 2.5.4.2.5 <. < 47 BX55C68 64 72 < 2 < 2.5.4.2.5 <. < 5 BX55C75 7 79 < 25 < 5 2.5.4.2.5 <. < 56 @ V R 2 Rev. 2, 2-Juni-3
Electrical Characteristics BX55B.. Partnumber ener Voltage Range ) V @ I T Dynamic Resistance r zjt @ I T, f = khz ) Tighter tolerances available on request: BX55A... ± % of V nom, BX55F... ± 3% of V nom r zjk @ I K, f = khz Temperature Coefficient I T TK V I K I R @ 25 C Reverse Leakage I R @ 5 C V Ω ma %/K ma µa V min max min max BX55B2V7 2.64 2.76 < 85 < 6 5 -.9 -.6 < < 5 BX55B3V 2.94 3.6 < 9 < 6 5 -.8 -.5 < 4 < 4 BX55B3V3 3.24 3.36 < 9 < 6 5 -.8 -.5 < 2 < 4 BX55B3V6 3.52 3.68 < 9 < 6 5 -.8 -.5 < 2 < 4 BX55B3V9 3.82 3.98 < 9 < 6 5 -.8 -.5 < 2 < 4 BX55B4V3 4.22 4.38 < 9 < 6 5 -.6 -.3 < < 2 BX55B4V7 4.6 4.8 < 8 < 6 5 -.5.2 <.5 < BX55B5V 5 5.2 < 6 < 55 5 -.2.2 <. < 2 BX55B5V6 5.48 5.72 < 4 < 45 5 -.5.5 <. < 2 BX55B6V2 6.8 6.32 < < 2 5.3.6 <. < 2 2 BX55B6V8 6.66 6.94 < 8 < 5 5.3.7 <. < 2 3 BX55B7V5 7.35 7.65 < 7 < 5 5.3.7 <. < 2 5 BX55B8V2 8.4 8.36 < 7 < 5 5.3.8 <. < 2 6.2 BX55B9V 8.92 9.28 < < 5 5.3.9. <. < 2 6.8 BX55B 9.8.2 < 5 < 7 5.3. <. < 2 7.5 BX55B.78.22 < 2 < 7 5.3. <. < 2 8.2 BX55B2.76 2.24 < 2 < 9 5.3. <. < 2 9. BX55B3 2.74 3.26 < 26 < 5.3. <. < 2 BX55B5 4.7 5.3 < 3 < 5.3. <. < 2 BX55B6 5.7 6.3 < 4 < 7 5.3. <. < 2 2 BX55B8 7.64 8.36 < 5 < 7 5.3. <. < 2 3 BX55B2 9.6 2.4 < 55 < 22 5.3. <. < 2 5 BX55B22 2.55 22.45 < 55 < 22 5.4.2 <. < 2 6 BX55B24 23.5 24.5 < 8 < 22 5.4.2 <. < 2 8 BX55B27 26.4 27.6 < 8 < 22 5.4.2 <. < 2 2 BX55B3 29.4 3.6 < 8 < 22 5.4.2 <. < 2 22 BX55B33 32.4 33.6 < 8 < 22 5.4.2 <. < 2 24 BX55B36 35.3 36.7 < 8 < 22 5.4.2 <. < 2 27 BX55B39 38.2 39.8 < 9 < 5 2.5.4.2.5 <. < 5 3 BX55B43 42. 43.9 < 9 < 6 2.5.4.2.5 <. < 5 33 BX55B47 46. 47.9 < < 7 2.5.4.2.5 <. < 5 36 BX55B5 5 52 < 25 < 7 2.5.4.2.5 <. < 39 BX55B56 54.9 57. < 35 < 2.5.4.2.5 <. < 43 BX55B62 6.8 63.2 < 5 < 2.5.4.2.5 <. < 47 BX55B68 66.6 69.4 < 2 < 2.5.4.2.5 <. < 5 BX55B75 73 76.5 < 25 < 5 2.5.4.2.5 <. < 56 @ V R Rev. 2, 2-Juni-3 3
VISHAY Typical Characteristics ( 25 C unless otherwise specified) R thja Therm.Resist.Junction/ Ambient ( K/W) 95 96 5 4 3 2 5 5 l T L =constant l Lead Length ( mm ) l 2 V tn RelativeVoltageChange 95 9599.3.2...9 V tn =V t /V (25 C) TK V= x 4 /K.8 6 6 2 8 8x 4 /K 6x 4 /K 4x 4 /K 2x 4 /K T j Junction Temperature ( C ) 2 x 4 /K 4 x 4 /K 24 Figure. Thermal Resistance vs. Lead Length Figure 4. Typical Change of Working Voltage vs. Junction Temperature P tot Total Power Dissipation ( mw) 95 962 6 5 4 3 2 4 8 2 6 T amb Ambient Temperature( C ) 2 TK Temperature Coefficient of V ( 4 V /K) 95 96 5 5 I =5mA 5 2 3 4 5 Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 5. Temperature Coefficient of Vz vs. -Voltage 2 V VoltageChange( mv ) T j =25 C I =5mA C Diode Capacitance ( pf ) D 5 5 V R =2V T j =25 C 5 5 2 25 5 5 2 25 95 9598 95 96 Figure 3. Typical Change of Working Voltage under Operating Conditions at 25 C Figure 6. Diode Capacitance vs. -Voltage 4 Rev. 2, 2-Juni-3
5 I Forward ( ma) F.. T j =25 C I - ( ma) 4 3 2 P tot =5mW 25 C..2.4.6.8. 5 2 25 3 35 95 965 V F Forward Voltage (V) 95 967 Figure 7. Forward vs. Forward Voltage Figure 9. - vs. -Voltage I - ( ma) 8 6 4 2 P tot =5mW 25 C r Differential -Resistance ( Ω ) 5mA ma I =ma 4 8 2 6 2 T j =25 C 5 5 2 25 95 964 95 966 Figure 8. - vs. -Voltage Figure. Differential -Resistance vs. -Voltage thp ThermalResistancefor PulseCond.(K/W) 95 963 t p /T=.5 t p /T=.2 t p /T=. t p /T=.5 t p /T=.2 t p /T=. Single Pulse 2 t p Pulse Length ( ms ) R thja =3K/W T=T jmax T amb i M =( V +(V 2 +4r zj x T/ thp ) /2 )/(2r zj ) Figure. Thermal Response Rev. 2, 2-Juni-3 5
VISHAY Package Dimensions in mm Cathode Identification technical drawings according to DIN specifications 94 9366.7 max..55 max. Standard Glass Case 54 A 2 DIN 488 JEDEC DO 35 Weight max..3g 26 min. 3.9 max. 26 min. 6 Rev. 2, 2-Juni-3
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()73 67 283, Fax number: 49 ()73 67 2423 Rev. 2, 2-Juni-3 7