Subminiature Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector is located face to face on the same optical axes. The operating wavelength is 95 nm. TCPT12 Applications Accurate position sensor for encoder, Detection for motion direction, Suitable for computer mouse and track-balls 14848 Features Gap 2 mm Package height: 4 mm A Coll Parts shipped taped and reeled 2 pcs/ reel Soldering method according to CECC82 table 1, class B or C Surface Mountable Technology (SMD) Cath 13895 E Order Instruction Ordering Code Resolution (mm) / Aperture (mm) Remarks TCPT12.24 /.3 Rev. A6, 2 Jul 1 1 (11)
Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current I F 25 ma Pulse forward current t p =.1 ms; t p / T =.1 I FP 1 ma Power dissipation T amb 25C P V 75 mw Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 2 ma Power dissipation T amb 25C P V 75 mw Coupler Parameter Test Conditions Symbol Value Unit Total power dissipation T amb 25C P tot 15 mw Ambient temperature range T amb 4 to +85 C Storage temperature range T stg 4 to +1 C Soldering temperature t 5 s T sd 23 C P tot Total Power Dissipation ( mw ) 2 Sensor 15 1 5 Emitter / Detector 25 5 75 1 16538 T amb Ambient Temperature ( C ) Figure 1. Derating diagram 2 (11) Rev. A6, 2 Jul 1
Electrical Characteristics (T amb = 25 C) Input (Emitter) TCPT12 Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 15 ma V F 1.2 1.5 V Reverse current V R = 5 V I R 1 A Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = 1 A V ECO 7 V Collector emitter cut-off current V CE = 25 V, I F =, E = I CEO 1 1 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector current V CE = 5 V, I F = 15 ma I C 3 5 A Collector emitter saturation voltage I F = 15 ma, I C =.5 ma V CEsat.4 V Rev. A6, 2 Jul 1 3 (11)
r TCPT12 Switching Characteristics Parameter Test Conditions Symbol Typ. Max. Unit Rise time I C =.3 ma, VCE = 5 V, R L = 1 t r 2 15 s Fall time (see figure 2) t f 3 15 s I F R G = 5 t p T = 2 t p = 1 ms I F 5 1 + 5 V I C adjusted through input amplitude Channel I Channel II Oscilloscope R L 1 M C L 2 pf I F I C 1% 9% t p 96 11698 t 16536 Figure 2. Test circuit 1% t r t t d t s t f t on t off t p t d t r t on (= t d + t r ) pulse duration delay time rise time turn-on time t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 3. Switching times 1 9 8 7 6 5 4 3 t f 2 1 t r 25 5 75 1 125 15 175 2 16552 I C Collector Current (µa) t / t Rise/ Fall Time ( f s ) I F = 15 ma GND + V C = 5 V 74HCT14 1 k V E U Q GND 13887 Figure 4. Rise/ Fall Time vs. Collector Current Figure 5. Application example 4 (11) Rev. A6, 2 Jul 1
Temperature Time Profile 3 94 8625 25 max. 24 C ca. 23 C 1 s 215 C 2 Temperature ( C ) 15 1 max. 16 C 9 12 s max. 4 s full line : typical dotted line: process limits 5 2 4 K / s Lead Temperature 5 1 15 2 25 Time ( s ) Figure 6. Infrared reflow soldering optodevices (SMD package) Typical Characteristics (T amb = 25 C, unless otherwise specified) I F Forward Current ( ma ) 1366 1. 1. 1. 1..1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. V F Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage V CEsat Collector Emitter Saturation Voltage ( V ) 13662.18.16.14.12.1.8.6.4.2 I F =15mA I C =5A 4 2 2 4 6 8 1 T amb Ambient Temperature ( C ) Figure 8. Collector Emitter Saturation Voltage vs. Ambient Temperature Rev. A6, 2 Jul 1 5 (11)
1. 1 I C Collector Current ( ma ) 1..1.1 V CE =5V I CEO Collector Dark Current, with open Base ( na ) 1 1 1 V CE =1V I F =.1.1 1. 1. 1. 13665 I F Forward Current ( ma ) Figure 9. Collector Current vs. Forward Current 96 11875 1 1 2 3 4 5 6 7 8 9 1 T amb Ambient Temperature ( C ) Figure 12. Collector Dark Current vs. Ambient Temperature 1.3 1.25 V Forward Voltage ( V ) F 1.2 1.1 1..9 I F =15mA I Crel Relative Collector Current 1..75.5.25 s.8 4 2 2 4 6 8 1 13661 T amb Ambient Temperature ( C ) Figure 1. Forward Voltage vs. Ambient Temperature 1.5 1..5..5 1. 1.5 13658 s Displacement ( mm ) Figure 13. Relative Collector Current vs. Displacement I C Collector Current ( ma ) 13663 1..9 V CE =5V.8.7 I F =15mA.6.5.4.3.2 I F =5mA.1 4 2 2 4 6 8 1 T amb Ambient Temperature ( C ) Figure 11. Collector Current vs. Ambient Temperature 6 (11) Rev. A6, 2 Jul 1
Packing Dampproof packing Products will be packed in anti-humidity aluminium bags to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant with moisture indicators. In the event bags absorb moisture, the indicators change their color from blue to pink. Recommended method of storage Dry box storage is recommended to prevent the parts from moisture absorption. The following conditions should be preserved if dry boxes are not available. Storage temperature: 1 to 3 C Storage humidity: 6% RH max In case of moisture absorption the device will recover to the former condition by drying under the following recommended conditions: Taped version: 6 C/ 48 h Untaped version: 6 C/ 48 h Aluminium bag Label Reel 1494 Rev. A6, 2 Jul 1 7 (11)
Dimensions of TCPT12 in mm 12899 8 (11) Rev. A6, 2 Jul 1
Dimensions of Reel and Shape in mm 13722 Rev. A6, 2 Jul 1 9 (11)
Dimensions of Tape in mm 13721 1 (11) Rev. A6, 2 Jul 1
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()7131 67 2831, Fax number: 49 ()7131 67 2423 Rev. A6, 2 Jul 1 11 (11)
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