STPS23CT/CG/CR LOW DROP POWER SCHOTTY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I F(AV) V RRM 2xA 3 V Tj (max) 5 C V F (max).4 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-22AB, D 2 PA and I 2 PA, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) D 2 PA STPS23CG I 2 PA STPS23CR TO-22AB STPS23CT Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V I F(RMS) RMS forward current 3 A I F(AV) Average forward Tc = 4 C Per diode A current δ =.5 Per device 2 I FSM Surge non repetitive forward current tp = ms Sinusoidal 8 A I RRM Peak repetitive reverse current tp=2 µs square F=kHz A I RSM Non repetitive peak reverse current tp = µs square 2 A P ARM Repetitive peak avalanche power tp = µs Tj = 25 C 3 W T stg Storage temperature range - 65 to + 5 C Tj Maximum operating junction temperature * 5 C dv/dt Critical rate of rise of reverse voltage (rated V R, Tj = 25 C) V/µs *: dptot < dtj Rth( j a) July 23 - Ed: 3A thermal runaway condition for a diode on its own heatsink /6
THERMAL RESISTANCES Symbol Parameter Value Unit R th(j-c) Junction to case TO-22AB - D 2 PA-I 2 PA Per diode 2.2 C/W Total.3 R th(c) Coupling.3 C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I R * Reverse leakage Tj = 25 C V R =V RRM.5. ma current Tj = 25 C 8 6 V F * Forward voltage drop Tj = 25 C I F =A.44.5 V Tj = 25 C I F =A.34.4 Tj=25 C I F =2A.5.58 Tj = 25 C I F =2A.44.52 Pulse test : * tp = 38 µs, δ <2% To evaluate the conduction losses use the following equation : P=.28xI F(AV) +.2 I F 2 (RMS) Fig. : Conduction losses versus average current. 6 5 4 3 2 P F(AV) (W) δ =. δ =.2 δ =.5 δ =.5 δ = T I F(AV) (A) δ=tp/t tp 2 3 4 5 6 7 8 9 2 3 Fig. 2: Average forward current versus ambient temperature(δ =.5). 9 8 7 6 5 4 3 2 I F(AV) (A) δ=tp/t T tp R th(j-a) =Rth(j-c) R th(j-a) =5 C/W T amb( C) 25 5 75 25 5 Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. P ARM(t p) P ARM(µs) P ARM(t p) P ARM(25 C).2..8.6..4... t p(µs).2 T j( C) 25 5 75 25 5 2/6
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. 75 I (A) M. Z th(j-c) /Rth(j-c) 5.9.8 25.7 75 T a=25 C T a=75 C.6.5.4 δ =.5 δ =.2 5 25 IM t δ=.5 t(s) T a=25 C.E-3.E-2.E-.E+.3.2.. δ =. Single pulse t (s) p δ=tp/t.e-3.e-2.e-.e+ T tp Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). Fig. 8: Junction capacitance versus reverse voltage applied (typical values)..e+3 I (ma) R. C(nF).E+2 T j=5 C T j=25 C F=MHz V OSC=3mVRMS T j=25 C.E+ T j= C.E+ T j=75 C T j=5 C..E- T j=25 C.E-2.E-3 V (V) R 5 5 2 25 3. V (V) R Fig. 9: Forward voltage drop versus forward current. Fig. : Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm). I FM(A) 8 R th(j-a) ( C/W) T j=25 C (maximum values) 7 T j=25 C (typical values) T j=25 C (maximum values) 6 5 4 3 2 V FM..2.4.6.8..2 (V) S(Cu)(cm²) 5 5 2 25 3 35 4 3/6
PACAGE MECHANICAL DATA I²PA REF. DIMENSIONS Millimeters Inches L2 E c2 A Min. Max. Min. Max. A 4.4 4.6.73.8 2.49 2.69.98.6 b.7.93.28.37 b.4.7.44.46 D b2.4.7.44.46 c.45.6.8.24 L L b2 b c2.23.36.48.54 D 8.95 9.35.352.368 e 2.4 2.7.94.6 E..4.394.49 L 3. 3.6.56.535 e b c L 3.48 3.78.37.49 L2.27.4.5.55 4/6
PACAGE MECHANICAL DATA D²PA REF. DIMENSIONS Millimeters Inches L2 E C2 A Min. Max. Min. Max. A 4.4 4.6.73.8 2.49 2.69.98.6.3.23..9 L D B.7.93.27.37 B2.4.7.45.67 L3 C.45.6.7.24 C2.23.36.48.54 G B2 B C R D 8.95 9.35.352.368 E..4.393.49 G 4.88 5.28.92.28 L 5. 5.85.59.624 L2.27.4.5.55 M * V2 L3.4.75.55.69 M 2.4 3.2.94.26 * FLAT ZONE NO LESS THAN 2mm R.4 typ..6 typ. V2 8 8 FOOTPRINT 6.9.3 5.8.3 8.9 3.7 5/6
PACAGE MECHANICAL DATA TO-22AB DIMENSIONS REF. Millimeters Inches L2 F2 F F G H2 Dia G L5 L9 L6 L4 A C D M E L7 Min. Max. Min. Max. A 4.4 4.6.73.8 C.23.32.48.5 D 2.4 2.72.94.7 E.49.7.9.27 F.6.88.24.34 F.4.7.44.66 F2.4.7.44.66 G 4.95 5.5.94.22 G 2.4 2.7.94.6 H2.4.393.49 L2 6.4 typ..645 typ. L4 3 4.5.55 L5 2.65 2.95.4.6 L6 5.25 5.75.6.62 L7 6.2 6.6.244.259 L9 3.5 3.93.37.54 M 2.6 typ..2 typ. Diam. 3.75 3.85.47.5 COOLING METHOD : C RECOMMENDED TORQUE VALUE :.55 M.N MAXIMUM TORQUE VALUE :.7 M.N Ordering type Marking Package Weight Base qty Delivery mode STPS23CT STPS23CT TO-22AB 2.2 g 5 Tube STPS23CG STPS23CG D²PA.48 g 5 Tube STPS23CG-TR STPS23CG D²PA.48 g Tape & reel STPS23CR STPS23CR I²PA.49 g 5 Tube EPOXY MEETS UL94,V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 23 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. http://www.st.com 6/6