STTH124TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics I F(AV) 2 x 6 A V RRM 4 V T j (max) 15 C V F (typ) t rr (max) Features and benefits Ultrafast switching Low reverse current Low thermal resistance.83 V 5 ns Reduces switching & conduction losses Description The STTH124TV1 uses ST 4V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 2: Order codes Part number STTH124TV1 Marking STTH124TV1 Table 3: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V I F(RMS) RMS forward current 12 A I F(AV) Average forward current T c = 115 C δ =.5 Per diode 6 A I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 6 A T stg Storage temperature range -55 to + 15 C T j Maximum operating junction temperature 15 C K2 A1 K1 A2 A2 K1 K2 A1 ISOTOP STTH124TV1 October 25 REV. 1 1/6
STTH124TV1 Table 4: Thermal resistance Symbol Parameter Value (max). Unit R th(j-c) Junction to case Per diode.5 C/W Total.3 R th(c) Coupling.1 C/W When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) Table 5: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I R * Reverse leakage current T j = 25 C V R = V RRM 5 µa T j = 125 C 5 5 V F ** Forward voltage drop T j = 25 C I F = 6 A 1.2 V Pulse test: * t p = 5 ms, δ < 2% ** t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.8 x I F(AV) +.33 I F 2 (RMS) Table 6: Dynamic characteristics (per diode) T j = 15 C.83 1. Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery T j = 25 C I F = 1 A /dt = 5 A/µs V R = 3 V 66 9 ns time I F = 1 A /dt = 2 A/µs V R = 3 V 36 5 I RM Reverse recovery current T j = 125 C I F = 6 A V R = 2 V /dt = 1 A/µs S factor Softness factor T j = 125 C I F = 6 A V R = 2 V /dt = 1 A/µs t fr V FP Forward recovery time Forward recovery voltage 15 A T j = 25 C I F = 6 A /dt = 2 A/µs V FR = 1.1 x V Fmax 6 ns T j = 25 C I F = 6 A /dt = 2 A/µs V FR = 1.1 x V Fmax 2.6 V.4 2/6
STTH124TV1 Figure 1: Conduction losses versus average forward current (per diode) 8 7 6 5 4 3 2 1 P(W) =.5 =.1 I F(AV) (A) =.2 =.5 =1 1 2 3 4 5 6 7 8 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 1..9.8.7.6.5.4.3.2.1. Figure 5: Reverse recovery time versus /dt (typical values, per diode) 25 225 2 175 15 125 T Figure 2: Forward voltage drop versus forward current (per diode) Figure 4: Peak reverse recovery current versus /dt (typical values, per diode) Figure 6: Reverse recovery charges versus /dt (typical values, per diode) 1 75 5 25 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 Z th(j-c) /R th(j-c) t rr Single pulse (ns) t P (s) V R =2V T J =125 C 5 1 15 2 25 3 35 4 45 5 2 18 16 14 12 1 8 6 4 2 45 4 35 3 25 2 15 1 5 3 25 2 15 1 5 I FM (A) V FM (V) T J =15 C (Maximum values) T J =15 C (Typical values) T J =25 C (Maximum values)..2.4.6.8 1. 1.2 1.4 1.6 I RM (A) V R =2V T J =125 C 5 1 15 2 25 3 35 4 45 5 Q rr (nc) V R =2V T J =125 C 1 2 3 4 5 3/6
STTH124TV1 Figure 7: Reverse recovery softness factor versus /dt (typical values, per diode).8.7.6.5 S FACTOR I F < 2 x I F(AV) V R =2V T j =125 C Figure 8: Relative variations of dynamic parameters versus junction temperature 1.6 1.4 1.2 1. S FACTOR.4.3.8.6 I RM & t RR.2.1. 5 1 15 2 25 3 35 4 45 5 Figure 9: Transient peak forward voltage versus /dt (typical values, per diode) 8 7 6 5 4 3 2 1 5 1 15 2 25 3 35 4 45 5 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) 1 Figure 1: Forward recovery time versus /dt (typical values, per diode) 1 V Fp (V) T j =125 C C(pF) F=1MHz V OSC =3mV RMS T j =25 C 1 1 1 1.4.2. Q RR T j ( C) V R =2V Reference: T j =125 C 25 5 75 1 125 1 9 8 7 6 5 4 3 2 1 t fr (ns) V FR =1.1 x V F max. T j =125 C 5 1 15 2 25 3 35 4 45 5 V R (V) 4/6
STTH124TV1 Figure 12: ISOTOP Package mechanical data DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 11.8 12.2.465.48 A1 8.9 9.1.35.358 B 7.8 8.2.37.323 C.75.85.3.33 C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.54 D1 31.5 31.7 1.24 1.248 E 25.15 25.5.99 1.4 E1 23.85 24.15.939.951 E2 24.8 typ..976 typ. G 14.9 15.1.587.594 G1 12.6 12.8.496.54 G2 3.5 4.3.138.169 F 4.1 4.3.161.169 F1 4.6 5..181.197 P 4. 4.3.157.69 P1 4. 4.4.157.173 S 3.1 3.3 1.185 1.193 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering information Ordering type Marking Package Weight Base qty Delivery mode 27 g 1 STTH124TV1 STTH124TV1 ISOTOP Tube (without screws) (with screws) Epoxy meets UL94, V Cooling method: by conduction (C) Table 8: Revision history Date Revision Description of Changes 18-Oct-25 1 First issue 5/6
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