Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High repetitive peak current capability l Lead Free package PDP TRENH IGBT PD - 9758B IRGB455PbF IRGS455PbF Key Parameters V E min 3 V V E(ON) typ. @ 11A 1.7 V I RP max @ T = 25 c 27 A T J max 15 G E n-channel E G TO-22 IRGB455DPbF E G D 2 Pak IRGS455DPbF G E Gate ollector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V E(on) and low E PULSE TM rating per silicon area which improve panel efficiency. Additional features are 15 operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units Gate-to-Emitter Voltage ±3 V I @ T = 25 ontinuous ollector urrent, @ 15V 11f I @ T = 1 ontinuous ollector, @ 15V 6 A I RP @ T = 25 Repetitive Peak urrent c 27 P D @T = 25 Power Dissipation 255 P D @T = 1 Power Dissipation 12 W Linear Derating Factor 2.4 W/ T J Operating Junction and -4 to + 15 T STG Storage Temperature Range Soldering Temperature for 1 seconds Mounting Torque, 6-32 or M3 Screw 3 1lbxin (1.1Nxm) N Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-ase d.5 R θs ase-to-sink, Flat Greased Surface, TO-22.5 R θja Junction-to-Ambient, TO-22 d 62 /W R θja Junction-to-Ambient (PB Mount), D 2 Pak d 4 www.irf.com 1 3/16/7
IRGB/S455PbF Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units BV ES ollector-to-emitter Breakdown Voltage 3 V onditions = V, I E = 1 ma ΒV ES / T J Breakdown Voltage Temp. oefficient.23 V/ Reference to 25, I E = 1mA 1.1 1.3 V = 15V, I E = 35A e 1.7 2.1 V = 15V, I E = 11A e V E(on) Static ollector-to-emitter Voltage 2.35 V = 15V, I E = 2A e 1.95 V = 15V, I E = 11A, T J = 15 (th) Gate Threshold Voltage 2.6 5. V V E =, I E = 1mA (th) / T J Gate Threshold Voltage oefficient -11 mv/ I ES ollector-to-emitter Leakage urrent 2. 25 µa V E = 3V, = V 1 V E = 3V, = V, T J = 15 I GES Gate-to-Emitter Forward Leakage 1 na = 3V Gate-to-Emitter Reverse Leakage -1 = -3V g fe Forward Transconductance 38 S V E = 25V, I E = 35A Q g Total Gate harge 132 n V E = 2V, I = 35A, = 15Ve Q gc Gate-to-ollector harge 42 t d(on) Turn-On delay time 44 57 I = 35A, V = 18V t r Rise time 39 55 ns R G = 1Ω, L=25µH, L S = 15nH t d(off) Turn-Off delay time 245 38 T J = 25 t f Fall time 152 198 t d(on) Turn-On delay time 42 I = 35A, V = 18V t r Rise time 4 ns R G = 1Ω, L=25µH, L S = 15nH t d(off) Turn-Off delay time 362 T J = 15 t f Fall time 39 t st Shoot Through Blocking Time 1 ns V = 24V, = 15V, R G = 5.1Ω L = 22nH, =.4µF, = 15V 75 E PULSE Energy per Pulse µj V = 24V, R G = 5.1Ω, T J = 25 915 L = 22nH, =.4µF, = 15V V = 24V, R G = 5.1Ω, T J = 1 iss Input apacitance 428 = V oss Output apacitance 2 pf V E = 3V rss Reverse Transfer apacitance 125 ƒ = 1.MHz, See Fig.13 L Internal ollector Inductance 5. Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 13 from package and center of die contact Notes: Half sine wave with duty cycle =.25, ton=1µsec. R θ is measured at T J of approximately 9. ƒ Pulse width 4µs; duty cycle 2%. alculated continuous current based on maximum allowable junction temperature. Package limitation current is 7A. 2 www.irf.com
V E (V) I E (A) I E (A) I E (A) I E (A) IRGB/S455PbF 2 15 Top = 18V V = 15 V = 12 = 1V V = 8. Bottom V = 6. 2 15 Top V = 18 V = 15 = 12V V = 1 = 8.V Bottom V = 6. 1 1 5 5..5 1. 1.5 2. 2.5 3. 3.5 V E (V) Fig 1. Typical Output haracteristics @ 25..5 1. 1.5 2. 2.5 3. 3.5 V E (V) Fig 2. Typical Output haracteristics @ 75 2 15 Top = 18V V = 15 V = 12 = 1V V = 8. Bottom = 6.V 2 15 Top V = 18 V = 15 = 12V = 1V V = 8. Bottom V = 6. 1 1 5 5..5 1. 1.5 2. 2.5 3. 3.5 V E (V) Fig 3. Typical Output haracteristics @ 125..5 1. 1.5 2. 2.5 3. 3.5 V E (V) Fig 4. Typical Output haracteristics @ 15 I, ollector-to-emitter urrent (A) 3 T J = 25 2 I = 35A 25 2 T J = 15 15 T J = 25 15 1 T J = 15 1 5 5 1µs PULSE WIDTH 5 1 15 5 1 15 2, Gate-to-Emitter Voltage (V) (V) Fig 5. Typical Transfer haracteristics Fig 6. V E(ON) vs. Gate Voltage www.irf.com 3
Energy Pulse (µj) I (A) Energy per Pulse (µj) Energy per Pulse (µj) I, ollector urrent (A) Repetitive Peak urrent (A) IRGB/S455PbF 12 1 Limited By Package 8 6 4 2 25 5 75 1 125 15 T, ase Temperature ( ) Fig 7. Maximum ollector urrent vs. ase Temperature 3 28 26 24 22 2 18 16 14 12 1 8 6 4 2 ton= 1µs Duty cycle =.25 Half Sine Wave 25 5 75 1 125 15 ase Temperature ( ) Fig 8. Typical Repetitive Peak urrent vs. ase Temperature 1 9 8 V = 24V L = 22nH = variable 1 9 8 L = 22nH =.4µF 7 6 5 1 25 7 6 5 4 1 25 4 3 3 16 17 18 19 2 21 22 23 I c, Peak ollector urrent (A) Fig 9. Typical E PULSE vs. ollector urrent 2 15 16 17 18 19 2 21 22 23 24 V E, ollector-to-emitter Voltage (V) Fig 1. Typical E PULSE vs. ollector-to-emitter Voltage 12 1 V = 24V L = 22nH t = 1µs half sine =.4µF 1 OPERATION IN THIS AREA LIMITED BY V E (on) 8 1 1µsec 1µsec =.3µF 6 =.2µF 1 1µsec 4 2 1 25 5 75 1 125 15 1 1 1 1 T J, Temperature (º) V E (V) Fig 11. E PULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com
apacitance (pf), Gate-to-Emitter Voltage (V) IRGB/S455PbF 1 1 V GS = V, f = 1 MHZ ies = ge + gd, ce SHORTED res = gc oes = ce + gc ies 16 14 12 1 I = 35A 2V 24V 1 8 6 1 oes res 4 2 1 5 1 15 2 V E, ollector-toemitter-voltage(v) Fig 13. Typical apacitance vs. ollector-to-emitter Voltage 25 5 75 1 125 15 Q G, Total Gate harge (n) Fig 14. Typical Gate harge vs. Gate-to-Emitter Voltage 1 D =.5 Thermal Response ( Z thj ) /W.1.1.2.1.5.2.1 R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 i= τi/ri i i/ri.1 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) R 4 R 4 τ 4 τ 4 τ τ Ri ( /W) τi (sec).773.9.548.12.23564.2452.2216.22464 Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-ase www.irf.com 5
IRGB/S455PbF A RG DRIVER PULSE A L V PULSE B B RG Ipulse DUT t ST Fig 16a. t st and E PULSE Test ircuit Fig 16b. t st Test Waveforms V E Energy I urrent 1K DUT L V Fig 16c. E PULSE Test Waveforms Fig. 17 - Gate harge ircuit (turn-off) 6 www.irf.com
IRGB/S455PbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$1,5) /27&2'( $66(%/('21::,17+($66(%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( <($5 :((. /,1(& TO-22AB package is not recommended for Surface Mount Application. www.irf.com 7
IRGB/S455PbF D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'(,17(51$7,21$/ $66(%/('21:: 5(&7,),(5,17+($66(%/</,1(/ /2*2 $66(%/< /27&2'( )6 3$5718%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(%/<6,7(&2'( 8 www.irf.com )6
IRGB/S455PbF D 2 Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRETION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) 15.42 (.69) 15.22 (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRETION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) 4 33. (14.173) MAX. 6. (2.362) MIN. NOTES : 1. OMFORMS TO EIA-418. 2. ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INLUDES FLANGE DISTORTION @ OUTER EDGE. 26.4 (1.39) 24.4 (.961) 3 3.4 (1.197) MAX. 4 The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. ustomers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, alifornia 9245, USA Tel: (31) 252-715 TA Fax: (31) 252-793 Visit us at www.irf.com for sales contact information.3/7 www.irf.com 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/