Tandem V HYPERAT RECTIIER MAJOR PRODUCT CHARACTERITIC I (AV) V RRM 5A V (in series) Tj (max) 15 C V (max). V I RM (typ.) 3. A EATURE AND BENEIT EPECIALLY UITED A BOOT DIODE IN CONTINUOU MODE POWER ACTOR CORRECTOR AND HARD WITCHING CONDITION DEIGNED OR HIGH di /dt OPERATION. HYPERAT RECOVERY CURRENT TO COMPETE WITH ic DEVICE. ALLOW DOWNIZING O MOET AND HEATINK INTERNAL CERAMIC INULATED DEVICE WITH EQUAL THERMAL CONDITION OR BOTH V DIODE INULATION (5V RM ) ALLOW PLACEMENT ON AME HEATINK A MOET LEXIBLE HEATINKING ON COMMON OR EPARATE HEATINK. MATCHED DIODE OR TYPICAL PC APPLICATION WITHOUT NEED OR VOLTAGE BALANCE NETWORK Package Capacitance: C=7p ABOLUTE RATING (limiting values, for both diodes) DECRIPTION 1 3 The TURBOWITCH H is an ultra high performance diode composed of two V dice in series. TURBOWITCH H family drastically cuts losses in the associated MOET when run at high di /dt. ymbol Parameter Value Unit V RRM Repetitive peak reverse voltage V I (RM) RM forward current 1 A I M urge non repetitive forward current tp = ms sinusoidal A T stg torage temperature range -5 +15 C Tj Maximum operating junction temperature + 15 C 1 3 Insulated TO-AB TM: TURBOWITCH is a trademark of TMicroelectronics June 3 - Ed: 1A 1/5
THERMAL AND POWER DATA ymbol Parameter Test conditions Value Unit R th (j-c) Junction to case thermal resistance Total 3. C/W P Conduction power dissipation for both diodes I (AV) =5A δ =.5 Tc = C 17 W TATIC ELECTRICAL CHARACTERITIC (for both diodes) I R * Reverse leakage current V R =V RRM Tj = 5 C µa Tj = 15 C V ** orward voltage drop I = 5 A Tj = 5 C 3. V Pulse test : * tp = ms, δ <% ** tp = 3 µs, δ <% To evaluate the maximum conduction losses use the following equation : P=1.xI (AV) +.1 I (RM) DYNAMIC CHARACTERITIC (for both diodes) Tj = 15 C.1. t rr Reverse recovery I =.5 A Irr =.5 A Tj = 5 C 1 ns time I R =1A I RM Reverse recovery current Reverse recovery softness factor I =1A di /dt = - 5 A/µs V R =V V R = V I =5A di /dt = - A/µs TURN-ON WITCHING CHARACTERITIC (for both diodes) 5 Tj = 15 C 3..5 A. - t fr orward recovery I =5A di /dt = A/µs Tj = 5 C ns time V R = 1.1 x V max V P Transient peak forward recovery voltage I =5A di /dt = A/µs Tj = 5 C 7 V /5
ig. 1: Conduction losses versus average current. ig. : orward voltage drop versus forward current. 1 1 1 P(W) δ =.5 δ =.1 δ =. δ =.5 9 7 I M(A) T j=15 C (maximum values) 1 δ = 1 5 T j=15 C (typical values) T j=5 C (maximum values) T I (AV) (A) δ=tp/t tp 1 3 5 7 V M(V) 1 3 5 7 ig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 1..9..7..5..3..1. 5 35 Z th(j-c) /Rth(j-c) δ =.5 δ =. δ =.1 ingle pulse t p(s) δ=tp/t 1.E-3 1.E- 1.E-1 1.E+ ig. 5: Reverse recovery time versus di /dt (9% confidence). t rr(ns) T tp 5 15 5 I = x I(AV) I =.5 x I(AV) V R=V T j=15 C 5 15 5 35 5 5 ig. : Peak reverse recovery current versus di /dt (9% confidence). 9 7 5 3 1 I RM(A) V R=V T j=15 C I =.5 x I(AV) I =.5 x I(AV) di /dt(a/µs) I = x I(AV) 5 15 5 35 5 5 ig. : Reverse recovery charges versus di /dt (9% confidence). 9 7 5 Q rr(nc) V R=V T j=15 C I = x I(AV) I =.5 x I(AV) 5 15 5 35 5 5 3/5
ig. 7: Reverse recovery softness factor versus di /dt (typical values). ig. : Relative variation of dynamic parameters versus junction temperature (reference: Tj = 15 C)...5 V R=V T j=15 C.5.5. 1.75 V R=V Reference: T j=15 C 1.5. 1.5 1..75 IRM.. 5 15 5 35 5 5.5.5. T ( C) j 5 5 75 15 ig. 9: Transient peak forward voltage versus di /dt (9% confidence). 1 1 1 1 V P(V) T j=15 C di /dt(a/µs) 5 15 5 35 5 5 ig. 11: Junction capacitance versus reverse voltage applied (typical values). ig. : orward recovery time versus di /dt (9% confidence). t fr(ns) C(p) =1MHz V OC=mVRM T j=5 C 1 1 1 di /dt(a/µs) V R=1.1 x V max. T j=15 C 5 1 V (V) R 1 /5
PACKAGE MECHANICAL DATA TO-AB l b1 e B l3 I l a1 L A a b c M C c1 DIMENION RE. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 15. 15.9.59.5 a1 3.5..137.15 a 13. 1..511.551 B...393.9 b1.1...3 b 1.3 1.3..51 C...173.11 c1.9.7.19.7 c..7.9.7 e..7.9.....59 I 3.75 3.5.17.151 I 1.. L.5.95..11 l 1.1 1.7.. l3 1.1 1.7.. M.. Ordering code Marking Package Weight Base qty Delivery mode TO-AB.3 g. 5 Tube Cooling method: C Recommended torque value:. N.m. Maximum torque value: 1 N.m. Epoxy meets UL9,V Information furnished is believed to be accurate and reliable. However, TMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TMicroelectronics. pecifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. TMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of TMicroelectronics. The T logo is a registered trademark of TMicroelectronics 3 TMicroelectronics - Printed in Italy - All rights reserved. TMicroelectronics GROUP O COMPANIE Australia - Brazil - Canada - China - inland - rance - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - ingapore pain - weden - witzerland - United Kingdom - United tates. http://www.st.com 5/5