March 996 NS8947 ual P-Channel Enhancement Mode Field Effect Transistor General escription Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. A, -V. R S(ON) =.65Ω @ V = -V R S(ON) =.Ω @ V =.5V. High density cell design for extremely low R S(ON). High power and current handling capability in a widely used surface mount package. ual MOSFET in surface mount package. 5 6 7 8 4 Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter NS8947 Units V SS rain-source Voltage - V V S Gate-Source Voltage - V I rain Current - Continuous (Note a) A - Pulsed -5 P Power issipation for ual Operation W Power issipation for Single Operation (Note a).6 (Note b) (Note c).9,t STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θa Thermal Resistance, unction-to-ambient (Note a) 78 C/W R θc Thermal Resistance, unction-to-case (Note ) 4 C/W 997 Fairchild Semiconductor Corporation
Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V = V, I = -5 µa - V I SS Zero Gate Voltage rain Current V S = V, V = V - µa = 55 C - µa I SF Gate - Body Leakage, Forward V = V, V S = V na I SR Gate - Body Leakage, Reverse V = - V, V S = V - na ON CHARACTERISTICS (Note ) V (th) Gate Threshold Voltage V S = V, I = -5 µa - -.6 -.8 V = 5 C -.7 -. -. R S(ON) Static rain-source On-Resistance V = - V, I =. A.5.65 Ω = 5 C.75. V =.5 V, I = -. A.85. I (on) On-State rain Current V = - V, V S = -5 V -5 A V =.5 V, V S = -5 V -5 g FS Forward Transconductance V S = - V, I =. A 7 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = -5 V, V = V, 69 pf C oss Output Capacitance f =. MHz 4 pf C rss Reverse Transfer Capacitance 6 pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = - V, I = - A, 9 ns t r Turn - On Rise Time V GEN = - V, R GEN = 6 Ω ns t (off) Turn - Off elay Time 4 5 ns t f Turn - Off Fall Time 9 4 ns Q g Total Gate Charge V S = - V, nc Q gs Gate-Source Charge I =. A, V = - V. nc Q gd Gate-rain Charge 5. nc
Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN I S Maximum Continuous rain-source iode Forward Current -. A V S rain-source iode Forward Voltage V = V, I S = -. A (Note ) -.85 -. V t rr Reverse Recovery Time V = V, I F = -. A, di F /dt = A/µs ns Notes:. R θa is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θc is guaranteed by design while R θca is determined by the user's board design. P (t) = T A = T A = Rθ A(t) Rθ C+RθCA(t) I (t) R S(ON ) T Typical R θa for single device operation using the board layouts shown below on 4.5"x5" FR PCB in a still air environment: a. 78 o C/W when mounted on a.5 in pad of oz copper. b. 5 o C/W when mounted on a. in pad of oz copper. c. 5 o C/W when mounted on a. in pad of oz copper. a b c Scale : on letter size paper. Pulse Test: Pulse Width < µs, uty Cycle <.%..
Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) - -5 - -5 V = -V -6. -5..5. -.5 -. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 V = -.5V - 4..5-5. -6. - - - - V S, RAIN-SOURCE VOLTAGE (V).5-8 - I, RAIN CURRENT (A) -6 - Figure. On-Region Characteristics. Figure. On-Resistance Variation with Gate Voltage and rain Current..6 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.4..8 I =.A V = -V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5 V = -V T = 5 C 5 C -55 C.6-5 -5 5 5 75 5 5 T, UNCTION TEMPERATURE ( C).5-8 - I, RAIN CURRENT (A) -6 - Figure. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with rain Current and Temperature. -. I, RAIN CURRENT (A) -5 - -5 V = -V S T = -55 C 5 C 5 C V th, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE..9.8.7 V = V S I = -5µA - - - -5 V, GATE TO SOURCE VOLTAGE (V) -6.6-5 -5 5 5 75 5 5 T, UNCTION TEMPERATURE ( C) Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature.
S SS Typical Electrical Characteristics BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE..8.6.4..98.96 I = -5µA.94-5 -5 5 5 75 5 5 T, UNCTION TEMPERATURE ( C) Figure 7. Breakdown Voltage Variation with Temperature. -I, REVERSE RAIN CURRENT (A) 5.. V = V T = 5 C 5 C -55 C..4.8..6 -V, BOY IOE FORWAR VOLTAGE (V) S Figure 8. Body iode Forward Voltage Variation with Current and Temperature. CAPACITANCE (pf) 5 f = MHz V = V C iss C oss C rss -V, GATE-SOURCE VOLTAGE (V) 8 6 4 I =.A V = -5V S -V -V...5 5 -V S, RAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. 5 5 5 Q g, GATE CHARGE (nc) Figure. Gate Charge Characteristics. g FS, TRANSCONUCTANCE (SIEMENS) 9 6 V = -V S T = -55 C -8 - I, RAIN CURRENT (A) 5 C 5 C -6 - Figure. Transconductance Variation with rain Current and Temperature.
Typical Thermal Characteristics.5 4.5 STEAY-STATE POWER ISSIPATION (W).5 c b Total Power for ual Operation 4.5"x5" FR Board o T A = 5 C Still Air.5..4.6.8 oz COPPER MOUNTING PA AREA (in ) a Power for Single Operation -I, STEAY-STATE RAIN CURRENT (A) 4.5.5 c b 4.5"x5" FR Board o T A = 5 C Still Air V = -V....4.5 oz COPPER MOUNTING PA AREA (in ) a Figure. SO-8 ual Package Maximum Steady-State Power issipation versus Copper Mounting Pad Area. Figure. Maximum Steady- State rain Current versus Copper Mounting Pad Area. 5 -I, RAIN CURRENT (A) 5.5..5 RS(ON) LIMIT V = -V SINGLE PULSE R = See Note c θa T = 5 C A C s ms ms s us ms....5 5 5 - V S, RAIN-SOURCE CURRENT (V) Figure 4. Maximum Safe Operating Area..5 =.5 r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE...5...5....5.. Single Pulse..... t, TIME (sec) P(pk) R (t) = r(t) * R θa θa R = See Note c θa t t T - T = P * R (t) A θa uty Cycle, = t / t Figure 5. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design.
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