Fast Recovery Silicon Power Rectifier BYT12P/6A/8A Features Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage Very good reverse current stability at high temperature Low thermal resistance 94 9537 Applications Fast rectifiers in S.M.P.S Freewheeling diodes and snubber diodes in motor control circuits Absolute Maximum Ratings Parameter Test Conditions Type Symbol Value Unit Reverse voltage, repetitive peak BYT12P/6A V R =V RRM 6 V reverse voltage Reverse voltage BYT12P/8A V R =V RRM 8 V Peak forward surge current t p =1ms I FSM 15 A Repetitive peak forward current I FRM 25 A Average forward current I FAV 12 A Junction temperature T j 15 C Storage temperature range T stg 4...+15 C Maximum Thermal Resistance Parameter Test Conditions Symbol Value Unit Junction case R thjc 2. K/W Junction ambient R thja 85 K/W 1 (5)
BYT12P/6A/8A Characteristics Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage I F =12A V F 1.9 V I F =12A, T j =1C V F 1.8 V Reverse current V R =V RRM I R 5 A V R =V RRM, T j =1C I R 2.5 ma Forward recovery time I F =12A, di F /dt5a/s t fr 35 ns Turn on transient peak V FP 4.5 V voltage Reverse recovery charac- I F=12A, di F/dt 5A/s, I RM 6 A teristics, see Fig. 3 V Batt =2V, T j =1C t IRM 16 ns Reverse recovery time Reverse recovery time I F =12A, di F /dt 5A/s, V Batt =2V, T j =1C i R =.25xI RM I F =.5A, I R =1A, i R =.25A t rr 18 ns t rr 5 ns Typical Characteristics ( unless otherwise specified) V F 95 9666 V FP 11% 1% V Batt t t fr 95 9667 Figure 1. Turn on transient peak voltage Figure 2. Test circuit 2 (5)
BYT12P/6A/8A I F di F /dt 95 9668 1 V F V Batt I RM t rr i R I Forward Current ( A ) F 1 1.1 Scattering Limit t IRM.1.6 1.2 1.8 2.4 94 994 V F Forward Voltage ( V ) 3. Figure 3. Turn off switching characteristic Figure 6. Forward Current vs. Forward Voltage 1 1 I R Reverse Current ( A ) 1 1 1 Q rr Reverse Recovery Charge ( nc ) 8 6 4 2 di F /dt=1a/s T C =1 C.1 4 8 12 16 2 3 6 9 12 15 18 21 94 9374 T j Junction Temperature ( C ) 94 9395 I F Forward Current ( A ) Figure 4. Reverse Current vs. Junction Temperature Figure 7. Reverse Recovery Charge vs. Forward Current I FAV Average Forward Current ( A ) 94 995 16 12 8 4 85K/W R thja =5K/W 1K/W R thjc =2K/W 4 8 12 16 2 T amb Ambient Temperature ( C ) Figure 5. Average Forward Current vs. Ambient Temperature t IRM Reverse Recovery Time for I RM ( ns ) 94 9392 16 12 8 4 T C =1 C 5 1 15 2 25 3 35 Figure 8. Reverse Recovery Time for IRM vs. Forward Current Rate of Change 3 (5)
BYT12P/6A/8A 2 25 I RM Reverse Recovery Current ( A ) 15 1 5 T C =1 C t Reverse Recovery Time ( ns ) rr 2 15 1 5 T C =1 C 5 1 15 2 25 3 35 5 1 15 2 25 3 35 94 9391 94 9393 Figure 9. Reverse Recovery Current vs. Forward Current Rate of Change Figure 1. Reverse Recovery Time vs. Forward Current Rate of Change Dimensions in mm.53.47 4.8 2.45 1.35 1.5.85.65 A 1. max. 3.5 5.8 C 1.25 2.9 4.7 technical drawings according to DIN specifications 5.8 16. 12.2 94 9536 Cathode connected with metallic surface, Plastic Case DO 22, Weight max.: 2.5 g 4 (5)
Ozone Depleting Substances Policy Statement BYT12P/6A/8A It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()7131 67 2831, Fax number: 49 ()7131 67 2423 5 (5)