Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted

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FP745L/FB745L N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional switching PWM controllers. These MOFETs feature faster switching and lower gate charge than other MOFETs with comparable R (ON) specifications resulting in C/C power supply designs with higher overall efficiency. Features A, 3 V March 24 R (ON) = 4.5 mω @ V = V R (ON) = 6. mω @ V = 4.5 V Critical C electrical parameters specified at elevated temperature High performance trench technology for extremely low R (ON) FP745L/FB745L C maximum junction temperature rating TO-22 FP eries TO-263AB FB eries Absolute Maximum Ratings TA=25 o C unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage 3 V V ate-ource Voltage ± 2 V I rain Current Continuous (Note ) A Pulsed (Note ) 3 P Total Power issipation @ T C = 25 C 7 W erate above 25 C.7 W/ C T J, T T Operating and torage Junction Temperature Range 55 to + C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case.4 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 C/W Package Marking and Ordering Information evice Marking evice Reel ize Tape width Quantity FB745L FB745L 3 24mm 8 units FP745L FP745L Tube n/a 45 24 Fairchild emiconductor Corporation FP745L/FB745L Rev (W)

Electrical Characteristics T A = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units rain-ource Avalanche Ratings (Note ) W ingle Pulse rain-ource Avalanche Energy V = 5 V, I = A 33 mj I AR Maximum rain-ource Avalanche Current A Off Characteristics BV rain ource Breakdown Voltage V = V, I = 25 µa 3 V BV T J Breakdown Voltage Temperature Coefficient I = 25 µa, Referenced to 25 C I Zero ate Voltage rain Current V = 24 V, V = V µa I ate Body Leakage V = ± 2 V, V = V ± na 25 mv/ C FP745L/FB745L On Characteristics (Note 2) V (th) ate Threshold Voltage V = V, I = 25 µa.8 3 V V(th) T J R (on) ate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = 25 µa, Referenced to 25 C V = V, I = 5 A V = 4.5 V, I = 4 A V = V, I = 5 A, T J=25 C I (on) On tate rain Current V = V, V = V 5 A g F Forward Transconductance V = 5V, I = 5 A 65 ynamic Characteristics C iss Input Capacitance V = 5 V, V = V, 4357 pf C oss Output Capacitance f =. MHz 92 pf C rss Reverse Transfer Capacitance 6 3.5 4. 5.5 4.5 6. 7. mv/ C mω 399 pf R ate Resistance V = 5 mv, f =. MHz.4 Ω witching Characteristics (Note 2) t d(on) Turn On elay Time V = 5V, I = A, 6 29 ns t r Turn On Rise Time V = V, R EN = 6 Ω 3 24 ns t d(off) Turn Off elay Time 74 9 ns t f Turn Off Fall Time 4 66 ns Q g Total ate Charge V = 5 V, I = 5 A, 4 58 nc Q gs ate ource Charge V = 5 V 2 nc Q gd ate rain Charge 4 nc rain ource iode Characteristics and Maximum Ratings I Maximum Continuous rain ource iode Forward Current A V rain ource iode Forward Voltage V = V, I = 5 A (Note ).9.2 V t rr iode Reverse Recovery Time I F = 5 A, 48 n iode Reverse Recovery Charge d if/d t = A/µs 42 nc Q rr Notes:. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to A. 2. Pulse Test: Pulse Width < 3µs, uty Cycle < 2.% FP745L/FB745L Rev (W)

Typical Characteristics V = V 3.5V 6.V 4.5V 3.V 5 25 R (ON), NORMALIZE RAIN-OURCE ON-REITANCE.8.6.4.2 V = 3.V 3.5V 4.V 4.5V 5.V 6.V V FP745L/FB745L 2.5V.5.5 2 V, RAIN-OURCE VOLTAE (V) Figure. On-Region Characteristics..8 2 4 6 8 Figure 2. On-Resistance Variation with rain Current and ate Voltage. R (ON), NORMALIZE RAIN-OURCE ON-REITANCE.8.6.4.2.8 I = 5A V =V R (ON), ON-REITANCE (OHM).4.2..8.6.4 T A = 25 o C T A = 25 o C I = 5A.6-5 -25 25 5 25 5 T J, JUNCTION TEMPERATURE ( o C).2 2 4 6 8 V, ATE TO OURCE VOLTAE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with ate-to-ource Voltage. 9 6 45 3 5 V = V T A = 25 o C 25 o C -55 o C.5 2 2.5 3 3.5 V, ATE TO OURCE VOLTAE (V) I, REVERE RAIN CURRENT (A)... V = V T A = 25 o C 25 o C -55 o C.2.4.6.8.2.4 V, BOY IOE FORWAR VOLTAE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with ource Current and Temperature. FP745L/FB745L Rev (W)

Typical Characteristics V, ATE-OURCE VOLTAE (V) I = 5A V = V 2V 8 5V 6 4 2 2 3 4 5 6 7 8 Q g, ATE CHARE (nc) Figure 7. ate Charge Characteristics. CAPACITANCE (pf) 6 5 4 3 2 C oss C iss C rss 5 5 2 25 3 V, RAIN TO OURCE VOLTAE (V) f = MHz V = V Figure 8. Capacitance Characteristics. FP745L/FB745L R (ON) LIMIT V = V INLE PULE R θjc =.4 o C/W T A = 25 o C m C m m µs µs. V, RAIN-OURCE VOLTAE (V) Figure 9. Maximum afe Operating Area. P(pk), PEAK TRANIENT POWER (W) 5 4 3 2 INLE PULE R θjc =.4 C/W T A = 25 C..... t, TIME (sec) Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE. =.5.2..5.2. INLE PULE...... t, TIME (sec) R θjc (t) = r(t) * R θja R θjc =.4 C/W P(pk t t 2 T J - T A = P * R θjc (t) uty Cycle, = t / t 2 Figure. Transient Thermal Response Curve. FP745L/FB745L Rev (W)

TRAEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROVOLT OME EcoPARK E 2 CMO Enigna FACT ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIHT TO MAKE CHANE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIIN OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIHT, NOR THE RIHT OF OTHER. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT TATU EFINITION efinition of Terms FACT Quiet eries FAT FATr FP FRFET lobaloptoisolator TO HieC I 2 C i-lo Across the board. Around the world. The Power Franchise Programmable Active roop Impliedisconnect IOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MX MXPro OCX OCXPro OPTOLOIC OPTOPLANAR PACMAN POP Power247 Poweraver PowerTrench QFET Q QT Optoelectronics Quiet eries RapidConfigure RapidConnect ILENT WITCHER MART TART 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product tatus efinition PM tealth uperfet uperot -3 uperot -6 uperot -8 yncfet TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I