VISHAY TSUS54. Infrared Emitting Diode, 95 nm, GaAs Description TSUS54. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. Features Low cost emitter Low forward voltage High radiant power and radiant intensity 94 8389 Suitable for DC and high pulse current operation Standard T-1¾ ( 5 mm) package Comfortable angle of half intensity ϕ = ± 22 Peak wavelength λ p = 95 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC Applications Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings Parameter Test condition Symbol Value Unit Reverse Voltage V R 5 V Forward current I F 15 ma Peak Forward Current t p /T =.5, t p = 1 µs I FM 3 ma Surge Forward Current t p = 1 µs I FSM 2.5 A Power Dissipation P V 21 mw Junction Temperature T j 1 C Operating Temperature Range T amb - 55 to + 1 C Storage Temperature Range T stg - 55 to + 1 C Soldering Temperature t 5 sec, 2 mm from case T sd 26 C Thermal Resistance Junction/ Ambient R thja 375 K/W Document Number 8156 Rev. 1.4, 8-Apr-4 1
TSUS54. VISHAY Electrical Characteristics Parameter Test condition Symbol Min Typ. Max Unit Forward Voltage I F = 1 ma, t p = 2 ms V F 1.3 1.7 V Temp. Coefficient of V F I F = 1 ma TK VF - 1.3 mv/k Reverse Current V R = 5 V I R 1 µa Junction capacitance V R = V, f = 1 MHz, E = C j 3 pf Optical Characteristics Parameter Test condition Symbol Min Typ. Max Unit Temp. Coefficient of φ e I F = 2 ma TKφ e -.8 %/K Angle of Half Intensity ϕ ± 22 deg Peak Wavelength I F = 1 ma λ p 95 nm Spectral Bandwidth I F = 1 ma λ 5 nm Temp. Coefficient of λ p I F = 1 ma TKλ p.2 nm/k Rise Time I F = 1 ma t r 8 ns I F = 1.5 A t r 4 ns Fall Time I F = 1 ma t f 8 ns I F = 1.5 A t f 4 ns Virtual Source Diameter 2.9 mm Type Dedicated Characteristics Parameter Test condition Part Symbol Min Typ. Max Unit Forward Voltage I F = 1.5 A, t p = 1 µs TSUS54 V F 2.2 3.4 V TSUS541 V F 2.2 3.4 V TSUS542 V F 2.2 2.7 V Radiant Intensity I F = 1 ma, t p = 2 ms TSUS54 I e 7 14 35 mw/sr TSUS541 I e 1 17 35 mw/sr TSUS542 I e 15 2 35 mw/sr I F = 1.5 A, t p = 1 µs TSUS54 I e 6 14 mw/sr TSUS541 I e 85 16 mw/sr TSUS542 I e 12 19 mw/sr Radiant Power I F = 1 ma, t p = 2 ms TSUS54 φ e 13 mw TSUS541 φ e 14 mw TSUS542 φ e 15 mw 2 Document Number 8156 Rev. 1.4, 8-Apr-4
VISHAY TSUS54. Typical Characteristics (Tamb = 25 C unless otherwise specified) 25 1 4 P - Power Dissipation ( mw ) V 2 15 1 5 R thja I - Forward Current ( ma ) F 1 3 1 2 1 1 1 94 7957 2 4 6 8 1 T amb - Ambient Temperature ( C ) 94 7996 1-1 1 2 3 V F - Forward Voltage (V) 4 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 25 1.2 I Forward Current ( ma) F 2 15 1 5 R thja V Frel - Relative Forward Voltage 1.1 1..9.8 I F =1mA 94 7988 2 4 6 8 T amb Ambient Temperature ( C ) 1 94 799.7 2 4 6 8 1 T amb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1 1 1 I Forward Current (A) F 1 I FSM = 2.5 A ( Single Pulse ) t p /T=.1.5.1.5 I e Radiant Intensity ( mw/sr ) 1 1 TSUS 542 TSUS54 TSUS 541 1 1 1. 1 2 1 1 1 1 1 1 2 94 7989 t p Pulse Duration ( ms ) 94 7997 1 1 1 1 1 2 1 3 1 4 I F Forward Current ( ma ) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 8156 Rev. 1.4, 8-Apr-4 3
TSUS54. VISHAY Radiant Power ( mw) e Φ 94 7998 1 1 1 1.1 1 TSUS 542 TSUS54 1 1 1 2 1 3 1 4 I F Forward Current ( ma ) I e rel Relative Radiant Intensity 94 7999 1..9.8.7.6 1.4.2.2.4 2 3 4 5 6 7 8.6 Figure 7. Radiant Power vs. Forward Current Figure 1. Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel ; Φ e rel 1.2.8 I F =2mA.4 94 7993-1 1 5 1 T amb - Ambient Temperature ( C ) 14 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature 1.25 - Relative Radiant Power e rel Φ 94 7994 1..75.5.25 I F = 1 ma 9 95 λ - Wavelength ( nm ) 1 Figure 9. Relative Radiant Power vs. Wavelength 4 Document Number 8156 Rev. 1.4, 8-Apr-4
VISHAY TSUS54. Package Dimensions in mm 96 12119 Document Number 8156 Rev. 1.4, 8-Apr-4 5
TSUS54. VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()7131 67 2831, Fax number: 49 ()7131 67 2423 6 Document Number 8156 Rev. 1.4, 8-Apr-4