N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. BF96S Applications Input- and mixer stages especially VHF TV-tuners. Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 3 G D G 1 9 937 96 167 1 BF96S Marking: BF96S Plastic case (TO 5) 1=Drain, =Source, 3=Gate 1, =Gate 163 S Absolute Maximum Ratings T amb = 5 C, unless otherwise specified Parameter Test Conditions Type Symbol Value Unit Drain - source voltage V DS V Drain current I D 3 ma Gate 1/Gate - source peak current ±I G1/GSM 1 ma Total power dissipation T amb 6 C P tot mw Channel temperature T Ch 15 C Storage temperature range T stg 55 to +15 C Maximum Thermal Resistance T amb = 5 C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Channel ambient on glass fibre printed board ( x 5 x 1.5) mm 3 R thcha 5 K/W plated with 35m Cu Document Number 853 www.vishay.de FaxBack +1-8-97-56 Rev. 3, -Jan-99 1 (8)
Electrical DC Characteristics T amb = 5 C, unless otherwise specified Parameter Test Conditions Type Symbol Min Typ Max Unit Drain - source I D = 1 A, V G1S = V GS = V V (BR)DS V breakdown voltage Gate 1 - source ±I G1S = 1 ma, V GS = V DS = ±V (BR)G1SS 8 1 V breakdown voltage Gate - source ±I GS = 1 ma, V G1S = V DS = ±V (BR)GSS 8 1 V breakdown voltage Gate 1 - source ±V G1S = 5 V, V GS = V DS = ±I G1SS 5 na leakage current Gate - source ±V GS = 5 V, V G1S = V DS = ±I GSS 5 na leakage current Drain current V DS = 15 V, V G1S =, V GS = V BF96S I DSS 18 ma BF96SA I DSS 1.5 ma BF96SB I DSS 9.5 18 ma Gate 1 - source V DS = 15 V, V GS = V, I D = A V G1S(OFF).5 V cut-off voltage Gate - source cut-off voltage V DS = 15 V, V G1S =, I D = A V GS(OFF). V Electrical AC Characteristics V DS = 15 V, I D = 1 ma, V GS = V, f = 1 MHz, T amb = 5 C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Forward transadmittance y 1s 15 18.5 ms Gate 1 input capacitance C issg1.5 3. pf Gate input capacitance V G1S =, V GS = V C issg 1. pf Feedback capacitance C rss 5 35 ff Output capacitance C oss 1. 1.3 pf Power gain G S = ms, G L =.5 ms, f = MHz G ps 5 db AGC range V GS = to V, f = MHz G ps 5 db Noise figure G S = ms, G L =.5 ms, f = MHz F 1. db www.vishay.de FaxBack +1-8-97-56 (8) Document Number 853 Rev. 3, -Jan-99
Typical Characteristics (T amb = 5 C unless otherwise specified) BF96S P tot Total Power Dissipation ( mw ) 96 1159 176 1763 3 5 15 1 5 6 8 1 1 1 16 36 3 8 16 1 T amb Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature V G1S =V 1.5V 8.5V 6 8 1 1 1 16 V DS Drain Source Voltage ( V ).5V Figure. Drain Current vs. Drain Source Voltage 1 9 8 7 6 5 V DS = 15V V V GS =6V 5V V 3V V 3 V 1 1 1 3 5 V G1S Gate 1 Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage 176 8 7 6 5 3 V DS = 15V V G1S =V 1 V 1 1 3 5 V GS Gate Source Voltage ( V ) Figure. Drain Current vs. Gate Source Voltage C issg1 Gate 1 Input Capacitance ( pf ) 1765. 3.5 3..5. 1.5 1..5 f=1mhz 3V V 3 6 9 1 15 18 1 7 3 Figure 5. Gate 1 Input Capacitance vs. Drain Current C oss Output Capacitance ( pf ) 1766. 1.75 1.5 1.5 1..75.5.5 I D =1mA f=1mhz 6 8 1 1 1 16 18 V DS Drain Source Voltage ( V ) Figure 6. Output Capacitance vs. Drain Source Voltage Document Number 853 www.vishay.de FaxBack +1-8-97-56 Rev. 3, -Jan-99 3 (8)
C issg Gate Input Capacitance ( pf ) 1767. 3.6 3..8.. 1.6 1..8. V G1S = f=1mhz 3 1 1 3 5 6 V GS Gate Source Voltage ( V ) Im ( y 11 ) ( ms ) 177 f=13mhz 18 I D =5mA 16 I D =1mA 1 1MHz I D =ma 1 1 7MHz 8 6 MHz f=1...13mhz 1MHz 6 8 1 1 1 16 18 Re (y 11 ) ( ms ) Figure 7. Gate Input Capacitance vs. Gate Source Voltage Figure 1. Short Circuit Input Admittance S 1 Transducer Gain ( db ) 1768 1 1 3 5 f= MHz V 3V V V.5V 6 V GS =... 3V 7 5 3 1 1 3 V G1S Gate 1 Source Voltage ( V ) Figure 8. Transducer Gain vs. Gate 1 Source Voltage Y 1S Forward Transadmittance ( ms ) 1769 18 16 1 1 1 8 6 f=1mhz V.5V 5 1 15 5 3 Figure 9. Forward Transadmittance vs. Drain Current 3V V Im ( y 1 ) ( ms ) 177.3..1 I D =5mA 1mA ma 1MHz. 7MHz f=1...13mhz.1.1..3..5 Re (y 1 ) ( ms ) f=13mhz Figure 11. Short Circuit Reverse Transfer Admittance Im ( y 1 ) ( ms ) 1771 5 5 1 15 5 3 35 f=1...13mhz I D =5mA 1mA ma 13MHz 1MHz 8 8 1 16 Re (y 1 ) ( ms ) f=1mhz MHz 7MHz Figure 1. Short Circuit Forward Transfer Admittance www.vishay.de FaxBack +1-8-97-56 (8) Document Number 853 Rev. 3, -Jan-99
Im ( y ) ( ms ) 1773 8 7 6 5 I D =5mA f=13mhz 3 MHz 1 1MHz f=1...13mhz.5 1. 1.5..5 Re (y ) ( ms ) ma 1MHz 7MHz I D =1mA Figure 13. Short Circuit Output Admittance Document Number 853 www.vishay.de FaxBack +1-8-97-56 Rev. 3, -Jan-99 5 (8)
V DS = 15 V, I D = 5 to ma, V GS = V, Z = 5 S 11 S 1 j.5 j j 1 9 6 j. ÁÁÁ. ÁÁÁ.5 ÁÁ 1 ÁÁ ÁÁ 5 1 j5 15 13MHz 1 18 1 3.8.16 j. 13MHz 1 7 j5 15 I D = ma 1mA 5mA 3 j.5 j 1 9 j Figure 1. Input reflection coefficient S 1 1 6 1 95 9 Figure 16. Reverse transmission coefficient S 1 9 7 6 1 j.5 j j 15 3 j. j5 1 18 13MHz.8 1.6..5 1 5 1 15 I D = ma 1mA 5mA 3 j. 13MHz 7 j5 1 6 1 96 9 Figure 15. Forward transmission coefficient j.5 j 1 97 j Figure 17. Output reflection coefficient www.vishay.de FaxBack +1-8-97-56 6 (8) Document Number 853 Rev. 3, -Jan-99
Dimensions in mm 96 1 Document Number 853 www.vishay.de FaxBack +1-8-97-56 Rev. 3, -Jan-99 7 (8)
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/5/EEC and 91/69/EEC Annex A, B and C ( transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-75 Heilbronn, Germany Telephone: 9 ()7131 67 831, Fax number: 9 ()7131 67 3 www.vishay.de FaxBack +1-8-97-56 8 (8) Document Number 853 Rev. 3, -Jan-99
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