FFSP June Integrated V P-hannel PowerTrench MOSFET and Schottky iode FFSP General escription The FFSP combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- package. This device is designed specifically as a single package solution for to converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of / converter topologies. Features 3., V R S(ON) = mω @ V GS = V R S(ON) = mω @ V GS =.5 V V F <.5 V @ (T J = 5 ) V F <.53 V @ V F <. V @ Schottky and MOSFET incorporated into single power surface mount SO- package Electrically independent Schottky and MOSFET pinout for design flexibility 7 SO- Pin S G S G 3 5 bsolute Maximum Ratings T=5 o unless otherwise noted Symbol Parameter Ratings Units V SS MOSFET rain-source Voltage V V GSS MOSFET Gate-Source Voltage ± V I rain urrent ontinuous (Note a) 3 P Pulsed Power issipation for ual Operation Power issipation for Single Operation (Note a). (Note b) (Note c).9 T J, T STG Operating and Storage Junction Temperature Range 55 to +5 V RRM Schottky Repetitive Peak Reverse Voltage 5 V I O Schottky verage Forward urrent (Note a) Package Marking and Ordering Information evice Marking evice Reel Size Tape width Quantity FFSP FFSP 3 mm 5 units W Fairchild Semiconductor orporation FFSP Rev B(W)
Electrical haracteristics T = 5 unless otherwise noted Symbol Parameter Test onditions Min Typ Max Units Off haracteristics BV SS rain Source Breakdown Voltage V GS = V, I = 5 µ V BVSS T J Breakdown Voltage Temperature oefficient I = 5 µ, Referenced to 5 mv/ I SS Zero Gate Voltage rain urrent V S = V, V GS = V µ I GSSF Gate Body Leakage, Forward V GS = V, V S = V n I GSSR Gate Body Leakage, Reverse V GS = V V S = V n FFSP On haracteristics (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = 5 µ. 3 V VGS(th) T J R S(on) Gate Threshold Voltage Temperature oefficient Static rain Source On Resistance I = 5 µ,referenced to 5 mv/ V GS = V, I = 3 V GS =.5 V, I =.7 V GS = V, I = 3, T J=5 I (on) On State rain urrent V GS = V, V S = 5 V g FS Forward Transconductance V S = 5 V, I = 3.3 S ynamic haracteristics iss Input apacitance V S = 3 V, V GS = V, 7 pf oss Output apacitance f =. MHz pf Reverse Transfer apacitance 33 pf rss Switching haracteristics (Note ) t d(on) Turn On elay Time V = 3 V, I =, 5 ns t r Turn On Rise Time V GS = V, R GEN = Ω 9 ns t d(off) Turn Off elay Time 5 ns Turn Off Fall Time.5 7 ns t f Q g Total Gate harge V S = 3V, I = 3, 5 n Q gs Gate Source harge V GS = V n Gate rain harge 3 n Q gd rain Source iode haracteristics and Maximum Ratings I S Maximum ontinuous rain Source iode Forward urrent.3 V S rain Source iode Forward Voltage 9 5 9 V GS = V, I S =.3 (Note ).. V mω FFSP Rev B(W)
Electrical haracteristics (continued) T = 5 unless otherwise noted Symbol Parameter Test onditions Min Typ Max Units Schottky iode haracteristics I R Reverse Leakage V R = 5 V T J = 5. µ T J = 5. m V F Forward Voltage I F = T J = 5..53 V T J = 5.3.5 I F = T J = 5.9. T J = 5..57 FFSP Thermal haracteristics R θj Thermal Resistance, Junction-to-mbient (Note a) 7 /W R θj Thermal Resistance, Junction-to-ase (Note ) /W Notes:. R θj is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θj is guaranteed by design while R θ is determined by the user's board design. a) 7 /W when mounted on a.5in pad of oz copper b) 5 /W when mounted on a. in pad of oz copper c) 35 /W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty ycle <.% FFSP Rev B(W)
Typical haracteristics -I, RIN-SOURE URRENT () V GS = -V -.5V -.V -3.5V -3.V -.5V R S(ON), NORMLIZE RIN-SOURE ON-RESISTNE..... V GS = -3.V -3.5V -.V -.5V -.V -V FFSP 3 5 -V S, RIN-SOURE VOLTGE (V). - I, RIN URRENT () Figure. On-Region haracteristics. Figure. On-Resistance Variation with rain urrent and Gate Voltage. R S(ON), NORMLIZE RIN-SOURE ON-RESISTNE...... I = -3 V GS = -V R S(ON), ON-RESISTNE (OHM).9..9..9 T = 5 o T = 5 o I = -.5. -5-5 5 5 75 5 5 T J, JUNTION TEMPERTURE ( o ). -V GS, GTE TO SOURE VOLTGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. -I, RIN URRENT () V S = -5V T = -55 o 5 o 5 o -I S, REVERSE RIN URRENT ()... V GS = V T = 5 o 5 o -55 o.5.5 3 3.5 -V GS, GTE TO SOURE VOLTGE (V)...... -V S, BOY IOE FORWR VOLTGE (V) Figure 5. Transfer haracteristics. Figure. Body iode Forward Voltage Variation with Source urrent and Temperature. FFSP Rev B(W)
Typical haracteristics -V GS, GTE-SOURE VOLTGE (V) I = -3 V S = -V -V -3V 3 9 5 Q g, GTE HRGE (n) PITNE (pf) ISS OSS f = MHz V GS = V RSS 5 5 -V S, RIN TO SOURE VOLTGE (V) FFSP Figure 7. Gate harge haracteristics. Figure. apacitance haracteristics. I F, FORWR LEKGE URRENT ()... T J = 5 o T J = 5 o...3..5..7. V F, FORWR VOLTGE (V) I R, REVERSE LEKGE URRENT ().E-.E- T J = 5 o.e-3.e-.e-5 T J = 5 o.e-.e-7.e- 3 5 V R, REVERSE VOLTGE (V) Figure 9. Schottky iode Forward Voltage. Figure. Schottky iode Reverse urrent. r(t), NORMLIZE EFFETIVE TRNSIENT THERML RESISTNE. =.5...5.. SINGLE PULSE R θj (t) = r(t) + R θj R θj = 35 /W t t T J - T = P * R θj (t) uty ycle, = t / t.... Figure. Transient Thermal Response urve. P(pk) Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FFSP Rev B(W)
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