PINNING - SOT186A PIN CONFIGURATION SYMBOL. case
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1 GENERAL DESCRPTON QUCK REFERENCE DATA Glass passivated dual epitaxial SYMBOL PARAMETER MAX. MAX. MAX. UNT rectifier diodes in a full pack plastic envelope, featuring low forward BYQ28X voltage drop, ultra-fast recovery V RRM Repetitive peak reverse V times and soft recovery voltage characteristic. They are intended for V F Forward voltage V use in switched mode power supplies O(AV) Output current (both A and high frequency circuits in general diodes conducting) where low conduction and switching t rr Reverse recovery time ns losses are essential. PNNNG - SOT86A PN CONFGURATON SYMBOL PN anode (a) 2 cathode (k) 3 anode 2 (a) case isolated DESCRPTON case 2 3 a a2 3 LMTNG VALUES Limiting values in accordance with the Absolute Maximum System (EC 34). SYMBOL PARAMETER CONDTONS MN. MAX. UNT V RRM Repetitive peak reverse voltage V V RWM V R Crest working reverse voltage Continuous reverse voltage V V O(AV) Output current (both diodes square wave - 0 A conducting) 2 δ = 0.5; T hs 92 C sinusoidal - 9 A a =.57; T hs 95 C O(RMS) RMS forward current - 4 A FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 0 A per diode T hs 92 C FSM Non-repetitive peak forward t = 0 ms - 50 A current per diode t = 8.3 ms sinusoidal; with reapplied - 55 A V RWM() 2 t 2 t for fusing t = 0 ms A 2 s T stg Storage temperature C T j Operating junction temperature - 50 C k 2 T hs 48 C for thermal stability. 2 Neglecting switching and reverse current losses August 996 Rev.000
2 SOLATON LMTNG VALUE & CHARACTERSTC T hs = 25 C unless otherwise specified V isol R.M.S. isolation voltage from all three terminals to external f = Hz; sinusoidal waveform; V heatsink R.H. 65% ; clean and dustfree C isol Capacitance from T2 to external heatsink f = MHz pf THERMAL RESSTANCES R th j-hs Thermal resistance junction to with heatsink compound K/W heatsink without heatsink compound K/W R th j-a Thermal resistance junction to in free air K/W ambient STATC CHARACTERSTCS T j = 25 C unless otherwise stated V F Forward voltage (per F = 5 A; T j = 50 C V F = 5 A V F = 0 A V R Reverse current (per V R = V RWM ; T j = 00 C ma V R = V RWM µa DYNAMC CHARACTERSTCS T j = 25 C unless otherwise stated Q s Reverse recovery charge (per F = 2 A; V R 30 V; -d F /dt = 20 A/µs nc t rr Reverse recovery time (per F = A; V R 30 V; ns -d F /dt = 00 A/µs t rr2 Reverse recovery time (per F = 0.5 A to R = A; rec = 0.25 A ns V fr Forward recovery voltage (per F = A; d F /dt = 0 A/µs - - V August Rev.000
3 F d F dt 0.5A F t rr 0A time rec = 0.25A Q s 00% 0% R trr2 R rrm = A R Fig.. Definition of t rr, Q s and rrm Fig.4. Definition of t rr2 F PF / W 8 7 Vo = V Rs = Ohms BYQ28 Ths() / C 04.4 D = V F time Fig.2. Definition of V fr V F time V fr 2 D = T t T F(AV) / A Fig.5. Maximum forward dissipation P F = f( F(AV) ) per diode; square current waveform where F(AV) = F(RMS) x D. tp tp R PF / W 6 Vo = V BYQ28 Ths() / C 5.8 Voltage Pulse Source D.U.T Rs = Ohms a = Current shunt to scope Fig.3. Circuit schematic for t rr F(AV) / A Fig.6. Maximum forward dissipation P F = f( F(AV) ) per diode; sinusoidal current waveform where a = form factor = F(RMS) / F(AV). August Rev.000
4 000 trr / ns 00 Qs / nc 00 F=5A 0 F=5A F=2A F=A 0 F=A df/dt (A/us) Fig.7. Maximum t rr at T j = 25 C; per diode df/dt (A/us) Fig.0. Maximum Q s at T j = 25 C; per diode 0 rrm / A Zth j-hs (K/W) 0 without heatsink compound with heatsink compound F=5A 0. F=A 0. P D t p df/dt (A/us) Fig.8. Maximum rrm at T j = 25 C; per diode t 0.0 0us ms tp / s 0.s 0s Fig.. Transient thermal impedance; per diode; Z th j-hs = f(t p ). 5 0 F / A Tj=50C Tj=25C BYQ28 5 typ VF / V Fig.9. Typical and imum forward characteristic F = f(v F ); parameter T j.5 August Rev.000
5 MECHANCAL DATA Dimensions in mm Net Mass: 2 g Recesses (2x) depth 3. not tinned seating plane min M (2x) Notes. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at /8". Fig.2. SOT86A; The seating plane is electrically isolated from all terminals. August Rev.000
6 DEFNTONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (EC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LFE SUPPORT APPLCATONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August Rev.000
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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