MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, SCHOTTKY TTL, ARITHMETIC LOGIC UNIT / FUNCTION GENERATORS, MONOLITHIC SILICON

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1 C OUND MI-M-38510/78 7 September 2005 SUERSED MI-M-38510/78 6 JUNE 1984 MIITRY SECIFICTION MICROCIRCUITS, DIIT, SCOTTKY TT, RITMETIC OIC UNIT / FUNCTION ENERTORS, MONOITIC SIICON This specification is approved for use by all Departments and gencies of the Department of Defense. The requirements for acquiring the product herein shall consist of this specification sheet and MI-RF SCOE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, Schottky TT, arithmetic logic unit / function generars. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MI-M have been superseded by MI-RF-38535, (see 6.4). 1.2 art or Identifying Number (). The is in accordance with MI-RF-38535, and as specified herein Device type. The device type is as follows: Inactive for new design after 23 ugust Device type Circuit 01 4-bit arithmetic logic unit / function generar 02 ookahead carry generar Device class. The device class is the product assurance level as defined in MI-RF Case outlines. The case outlines are as designated in MI-STD-1835 and as follows: Outline letter Descriptive designar Terminals ackage style E DI1-T16, CDI2-T16 16 Dual in line package F D-6, CD-6 16 Flat ackage J DI1-T24, CDI2-T24 24 Dual in line package K D-4, CD-4 24 Flat ackage X CQCC2-N28 28 Square chip carrier package Z DF7-4, CDF Flat ackage 3 CQCC1-N28 28 Square chip carrier package Comments, suggestions, or questions on this document should be addressed : Commander, Defense Supply Center Columbus, TTN: DSCC-VS,. O. ox 3990, Columbus, O , or ed bipolar@dscc.dla.mil. Since contact information can change, you may want verify the currency of this address information using the SSIST Online database at MSC N/ FSC 5962

2 MI-M-38510/ bsolute maximum ratings. Supply voltage range V dc +7.0 V dc Input voltage range V dc at -18 m + dc Srage temperature range C +150 C imum power dissipation ( D ) 1/ : Device types mw dc Device type mw dc ead temperature (soldering 10 seconds) C Thermal resistance, junction--case ( θ JC ) : E, F, J, K, X, Z, and 3... (See MI-STD-1835) Junction temperature (T J ) 2/ C 1.4 Recommended operating conditions: Supply voltage (V CC ) V dc minimum dc maximum imum high level input voltage (V I )... dc imum low level input voltage (V I )... dc 3/ Normalized fanout (each output) 4/ ogic low level.. 10 maximum ogic high level. 20 maximum Case operating temperature range (T C ) C 125 C 2.0 ICE DOCUMENTS 2.1 eneral. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 overnment documents Specifications and standards. The following specifications and standards form a part of this specification the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DERTMENT OF DEFENSE SECIFICTIONS MI-RF Integrated Circuits (Microcircuits) Manufacturing, eneral Specification for. DERTMENT OF DEFENSE STNDRDS MI-STD Test Method Standard for Microelectronics. MI-STD Interface Standard Electronic Component Case Outlines. (Copies of these documents are available online at or or from the Standardization Document Order Desk, 700 Robbins venue, uilding 4D, hiladelphia, ) 2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Must withstand the added D due short circuit condition (e.g., I OS ) at one output for 5 seconds duration. 2/ imum junction temperature should not be exceeded except for the allowable short duration burn-in screening per MI-RF / V I = 0.7 V at +125 o C 4/ fanout of 20 normalized loads is provided facilitate connection of unused inputs used inputs. 2

3 MI-M-38510/78 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item requirements shall be in accordance with MI-RF and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MI-RF and herein Terminal connections and pin designations. The terminal connections and pin designations shall be as specified on figure Truth tables and logic equations. The truth tables and logic equations shall be as specified on figure ogic diagrams. The logic diagrams shall be as specified on figure Schematic circuits. The schematic circuit shall be maintained by the manufacturer and made available the qualifying activity and the preparing activity upon request Case outlines. The case outlines shall be as specified in ead material and finish. The lead material and finish shall be in accordance with MI-RF (see 6.6). 3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in table I, and apply over the full recommended case operating temperature range. 3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in Table II. The electrical tests for each subgroup are described in Table III. 3.7 Marking. Marking shall be in accordance with MI-RF and 1.2 herein 3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 11 (see MI-RF-38535, appendix ). 3

4 MI-M-38510/78 TE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits igh level output voltage V O V CC = 4.5 V; V I = ; 2/ V = ; I O = -1 m 01, V ow level output voltage V O V CC = 4.5 V; V I = ; 2/ V I = ; I O = 20 m 01, V 3/ Input diode clamp V IC V CC = 4.5 V; I = -18 m T C = +25 C 01, V ow level input current at M input ow level input current at input ow level input current at S0 or S3 input I I1 V CC = ; V = 0.5 V 4/ m I I2 V CC = ; V = 0.5 V 4/ m I I3 V CC = ; V = 0.5 V 4/ m ow level input current at S1 or S2 I I4 V CC = ; V = 0.5 V; 5/ 0, 1, 2, 3 = m ow level input current at C n input ow level input current at input I I5 V CC = ; V = 0.5 V 5/ m I I6 V CC = ; V = 0.5 V 4/ m ow level input current at 1 input I I1 V CC = ; V = 0.5 V, C n = 4/ m ow level input current at 1 input I I2 V CC = ; V = 0.5 V, C n = 4/ m ow level input current at 0 input I I3 V CC = ; V = 0.5 V, C n = 4/ m ow level input current at 0 input ow level input current at 3 input ow level input current at 3 input I I4 V CC = ; V = 0.5 V 4/ m I I5 V CC = ; V = 0.5 V 4/ m I I6 V CC = ; V = 0.5 V 4/ m See footnotes at end of table I. 4

5 MI-M-38510/78 TE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits ow level input current at C n input I I7 V CC = ; V = 0.5 V 4/ m ow level input current at 2 input I I8 V CC = ; V = 0.5 V, C n = 4/ m ow level input current at 2 input igh level input current at M input igh level input current at or input igh level input current at S0 or S3 input I I9 V CC = ; V = 0.5 V 4/ m I I1 V CC = ; V = 5/ µ I I2 V CC = ; V = 5/ µ I I3 V CC = ; V = 5/ µ igh level input current at S1 or S2 input I I4 V CC = ; V = ; 5/ 0, 1, 2, 3 = µ igh level input current at C n input igh level input current at M input igh level input current at or input igh level input current at S0 or S3 input I I5 V CC = ; V = 4/ µ I I6 V CC = ; V = 5/ 01 1 m I I7 V CC = ; V = 5/ 01 1 m I I8 V CC = ; V = 5/ 01 1 m igh level input current at S1 or S2 input I I9 V CC = ; V = ; 5/ 0, 1, 2, 3 = 01 1 m igh level input current at C n input I I10 V CC = ; V = 4/ 01 1 m igh level input current at 1 input I I1 V CC = ; V = ; C n = 5/ µ igh level input current at 1 input I I2 V CC = ; V = C n = 5/ µ See footnotes at end of table I. 5

6 MI-M-38510/78 TE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits igh level input current at 0 input I I3 V CC = ; V = C n = 5/ µ igh-level input current at 0 input igh-level input current at 3 input igh-level input current at 3 input igh level input current at Cn input I I4 V CC = ; V = 5/ µ I I5 V CC = ; V = 5/ µ I I6 V CC = ; V = 5/ µ I I7 V CC = ; V = 5/ µ igh-level input current at 2 input I I8 V CC = ; V = ; C n = 5/ µ igh-level input current at 2 input I I9 V CC = ; V = 5/ µ igh level input current at 1 input I I10 V CC = ; V = ; C n = 5/ 02 1 m igh level input current at 1 input I I11 V CC = ; V = ; C n = 5/ 02 1 m igh level input current at 0 I I12 V CC = ; V = ; C n = 5/ 02 1 m igh level input current at 0 input I I13 V CC = ; V = 5/ 02 1 m igh level input current at 3 input I I14 V CC = ; V = ; C n = 5/ 02 1 m igh level input current at 3 input igh level input current at C n input I I15 V CC = ; V = 5/ 02 1 m I I16 V CC = ; V = 5/ 02 1 m igh level input current at 2 I I17 V CC = ; V = ; C n = 5/ 02 1 m See footnotes at end of table I. 6

7 MI-M-38510/78 TE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits igh level input current at 2 input I I18 V CC = ; V = 5/ 02 1 m Short circuit output current at output I OS1 V CC = ; S3, 3, 3 = 5/ 6/ m Short circuit output current at C n+4 output Short circuit output current at, thru outputs I OS2 V CC = 5/ 6/ m I OS3 V CC = 4/ 6/ m Short circuit output current I OS V CC = ; V I = ; V = 6/ m Collecr cuff current I CEX V CC = ; V O = ; V I = ; V I = V CC = ; V O = ; V I = ; V I = 01 1 m µ ow level supply current I CC I CC V CC = ; V I = 0 V; V I = 7/ V CC = ; V I = 0 V; V I = m m igh level supply current I CC I CC V CC = ; V I = 0 V; V I = 8/ V CC = ; V I = 0 V; V I = m m ropagation delay times, high low level output: 9/ i or i any F sum mode i or i any F diff mode i or i sum mode t 1 t 2 t 3 sum mode test table ns diff mode test table ns sum mode test table ns See footnotes at end of table I. 7

8 MI-M-38510/78 TE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits ropagation delay times, high--low level output: 9/ i or i diff mode i or i sum mode i or i diff mode C n any sum mode i or i = diff mode C n C n+4 sum mode C n C n+4 diff mode i or i C n+4 sum mode i or i C n+4 diff mode t 4 t 5 t 6 t 7 t 8 t 9 t 10 t 11 t 12 diff mode test table ns sum mode test table ns diff mode test table ns sum mode test table ns diff mode test table ns sum mode test table ns diff mode test table ns sum mode test table ns diff mode test table ns i or i any F logic mode t 13 logic mode test table ns ropagation delay times, low high level output: 9/ i or i any F sum mode i or i any F diff mode i or i sum mode See footnotes at end of table I. t 1 t 2 t 3 sum mode test table ns diff mode test table ns sum mode test table ns 8

9 MI-M-38510/78 TE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits ropagation delay times, low high level output: 9/ i or i diff mode i or i sum mode i or i diff mode C n any F sum mode i or i = diff mode C n C n+4 sum mode C n C n+4 diff mode i or i C n+4 sum mode i or i C n+4 diff mode t 4 t 5 t 6 t 7 t 8 t 9 t 10 t 11 t 12 diff mode test table ns sum mode test table ns diff mode test table ns sum mode test table ns diff mode test table ns sum mode test table ns diff mode test table ns sum mode test table ns diff mode test table ns i or i any F logic mode t 13 logic mode test table ns ropagation delay times, high low level output: 10/ C n C n+x, C n+y, C n+z 0, 1, or 2, C n+x, C n+y, C n+z t 1 t 2 V CC = 5.0 V; 0, 1, 2 =, i = V CC = 5.0 V; 0, 1, 2 = ; C n, i = ns ns 0, 1, or 2 C n+y, C n+x, C n+z t 3 V CC = 5.0 V; C n, 0, 1, 2 =, i = 11/ ns See footnotes at end of table I. 9

10 MI-M-38510/78 TE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 C T C +125 C Unless Otherwise Specified Device type imits ropagation delay times, high low level output: 10/ 1, 2, or 3 t 4 0, 1, 2, or 3 t 5 0, 1, 2, or 3 t 6 V CC = 5.0 V; i = ; 11/ C n, 1, 2, 3 = V CC = 5.0 V; i = ; 11/ 1, 2, 3 = i = 11/, V CC = 5.0 V; C n, i = ns ns ns ropagation delay times, low high level output: 10/ C n C n+x, C n+y, C n+z t 1 0, 1, or 2, C n+x, C n+y, C n+z t 2 0, 1, or 2, C n+x, C n+y, C n+z t 3 1, 2, or 3 t 4 0, 1, 2, or 3 t 5 0, 1, 2, or 3 t 6 1/ Condition of inputs specified in table III. 2/ V I = 0.7 V dc at 125 C. 3/ V O (max) = 0.45 V dc at 125 C. 4/ ll unspecified inputs at. 5/ ll unspecified inputs at 0 V. V CC = 5.0 V; 0, 1, 2, =, i = V CC = 5.0 V; C n, i = 2.7 V; 0, 1, 2, = 11/ V CC = 5.0 V; C n, 0, 1, 2, = ; i = 11/ V CC = 5.0 V; C n, 1, 2, 3 = ; i = 11/ V CC = 5.0 V; 1, 2, 3 = ; i = 11/ V CC = 5.0 V; i = 11/ C n, i = ns ns ns ns ns ns 6/ Not more than one output should be shorted at a time. 7/ S i, M i at 4.5 V; all other inputs grounded; outputs open. 8/ S i, M at 4.5 V; all other inputs grounded; outputs open. 9/ In i and i, i = 0, 1, 2, or 3. 10/ In i and i, i = 0, 1, 2, or 3. 11/ If not under test. 10

11 MI-M-38510/78 TE II. Electrical test requirements. MI-RF Test requirements Interim electrical parameters Subgroups (see table III) Class S Devices Class Devices 1 1 Final electrical test parameters 1*, 2, 3, 7, 9, 10, 11 roup test requirements 1, 2, 3, 7, 8, 9, 10, 11 1*, 2, 3, 7, 9 1, 2, 3, 7, 8, 9, 10, 11 roup electrical test parameters when using the method 5005 QCI option roup C end-point electrical arameters 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 N/ 1, 2, 3 roup D end point electrical arameters 1, 2, 3 1, 2, 3 4. VERIFICTION *D applies subgroup Sampling and inspection. Sampling and inspection procedures shall be in accordance with MI-RF or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MI-RF Screening. Screening shall be in accordance with MI-RF-38535, and shall be conducted on all devices prior qualification and conformance inspection. The following additional criteria shall apply: a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MI-RF The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review oard (TR) in accordance with MI-RF and shall be made available the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MI-STD-883. b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test prior burn-in is optional at the discretion of the manufacturer. c. dditional screening for space level product shall be as specified in MI-RF

12 MI-M-38510/ Technology Conformance Inspection (TCI). Technology conformance inspection shall be in accordance with MI-RF and herein for groups,, C, and D inspections (see through 4.4.4) roup inspection. roup inspection shall be in accordance with table III of MI-RF and as follows: a. Tests shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted roup inspection. roup inspection shall be in accordance with table II of MI-RF Electrical parameters shall be as specified in table II herein roup C inspection. roup C inspection shall be in accordance with table IV of MI-RF and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MI-RF The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review oard (TR) in accordance with MI-RF and shall be made available the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MI-STD roup D inspection. roup D inspection shall be in accordance with table V of MI-RF End-point electrical tests shall be as specified in table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: Voltage and current. ll voltages given are referenced the microcircuit ground terminal. Currents given are conventional and positive when flowing in the referenced terminal. 12

13 MI-M-38510/78 Device type 01 Device type 02 Terminal Number Case Outline J, K, and Z Case Outline 3 and X Case Outline E and F Function Function Function 1 0 Word inputs NC No Connect 1 Carry generate input 2 0 Word inputs 0 Word inputs 1 Carry propagate input 3 S3 Function select Carry generate inputs 0 Word inputs 0 input 4 S2 Function select Function select Carry propagate S3 inputs inputs 0 input 5 S1 Function select Function select Carry generate S2 inputs inputs 3 input 6 S0 Function select Function select Carry propagate S1 inputs inputs 3 input 7 C n Inv. Carry output S0 Function select Carry ropogate inputs output 8 M Mode control input C n Inv. Carry output round 9 F 0 Function outputs M Mode control input C n+z Carry output 10 F 1 Function outputs NC No Connect Carry generate output 11 F 2 Function outputs F 0 Function outputs C n+y Carry output 12 round F 1 Function outputs C n+x Carry output 13 F 3 Function outputs F 2 Function outputs C n Carry input 14 = Comparar output round 2 Carry generate input 15 Carry ropagate Carry propagate NC No Connect output 2 input 16 C n+4 Inv. Carry output F 3 Function outputs V CC Supply voltage 17 Carry generate output = Comparar output Carry ropagate output Word inputs C n+4 Inv. Carry output 18 3 Word inputs Word inputs Carry generate output 21 2 Word inputs NC No Connect 22 1 Word inputs 3 Word inputs 23 1 Word inputs 3 Word inputs 24 V CC Supply Voltage 2 Word inputs 25 2 Word inputs 26 1 Word inputs 27 1 Word inputs 28 V CC Supply voltage FIURE 1. Terminal connections and pin designations. 13

14 MI-M-38510/78 Selection S3 S2 S1 S0 M = ogic functions C n = 0 C n = 1 = ctive high data 3/ M = ; rithmetic operations C n = 1 C n = 0 = 0 F = F = F = plus 1 1 F = + F = + F = ( + ) plus 1 2 F = F = + F = ( + ) plus 1 3 F = 0 F = minus 1 (2 s compl) F = zero 4 F = F = plus F = plus plus 1 5 F = F = ( + ) plus F = ( + ) plus plus 1 2/ 6 F = F = minus minus 1 F = minus 7 F = F = minus 1 F = FIURE 2. Truth tables and logic equations for device type

15 Selection S3 S2 S1 S0 M = ogic functions MI-M-38510/78 C n = 0 C n = 1 = ctive high data 3/ M = ; rithmetic operations C n = 1 C n = 0 = 8 F = + F = plus F = plus plus 1 9 F = F = plus F = plus plus 1 10 F = F = ( + ) plus F = ( + ) plus plus 1 11 F = F = minus 1 F = 12 F = 1 F = plus 1/ F = plus plus 1 13 F = + F = ( + ) plus F = ( + ) plus plus 1 14 F = + F = ( + ) plus F + ( + ) plus plus 1 15 F = F = minus 1 F = 1/ Each bit is shifted the next more significant position. 2/ This device (U) can be used as a comparar when placed in the subtract mode (i.e., S3 S2 S1 S0 are at logical levels, respectively) and the following expressions are valid: ctive high data When C n is high and C n+4 is high, then When C n is low and C n+4 is high, then < When C n is high and C n+4 is low, then > When C n is low and C n+4 is low, then 3/ The table shown applies for positive logic. If negative logic is used, active high data becomes active low data. FIURE 2. Truth tables and logic equations for device type 01 Continued. 15

16 MI-M-38510/78 Selection S3 S2 S1 S0 M = ogic functions C n = 0 = ctive high data 5/ M = ; rithmetic operations C n = 1 = 0 F = F = minus 1 F = 1 F = F = minus 1 F = 2 F = + F = minus 1 F = 3 F = 1 F = minus 1 (2 s compl) F = zero 4 F = + F = plus ( + ) F = plus ( + ) plus 1 5 F = F = plus ( + ) F = plus ( + ) plus 1 4/ 6 F = F = minus minus 1 F = minus 7 F = + F = + F = ( + ) plus 1 8 F = F = plus ( + ) F = plus ( + ) plus 1 9 F = F = plus F =, plus plus 1 10 F = F = plus ( + ) F = plus ( + ) plus 1 11 F = + F = + F = ( + ) plus 1 12 F = 0 F = plus 1/ F = plus plus 1 13 F = F = plus F = plus plus 1 14 F = F = plus F = plus plus 1 15 F = F = F = plus 1 4/ This device (U) can be used as a comparar when placed in the subtract mode (i.e., S3 S2 S1 S0 are at logical levels, respectively) and the following expressions are valid: ctive low data When C n is low and C n+4 is low, then When C n is high and C n+4 is low, then < When C n is low and C n+4 is high, then > When C n is high and C n+4 is high, then 5/ The table shown applies for negative logic. If positive logic is used, active low data becomes active high data. FIURE 2. Truth tables and logic equations for device type 01 - Continued. 16

17 MI-M-38510/78 Inputs Outputs C n C n+x C n+y C n+z X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X = igh voltage level = ow voltage level X = Don t care FIURE 2. Truth tables and logic equations for device type 02 Continued. 17

18 MI-M-38510/78 FIURE 3. ogic diagrams. 18

19 MI-M-38510/78 FIURE 3. ogic diagrams Continued. 19

20 MI-M-38510/78 NOTES: 1. The input pulse has the following characteristics: RR 1 Mz, t r = t f 2.5 ns. Z 50 Ω. 2. C includes probe and jig capacitance. 3. ll diodes are 1N3064 or equivalent. 4. oad circuit is required on a given output only where table III indicates on that output. oad circuits may otherwise be omitted. FIURE 4. Waveforms for propagation delay time and test circuit for device type

21 MI-M-38510/78 NOTES: 1. The input pulse has the following characteristics: RR 1 Mz, t r = t f 2.5 ns. Z = 50 Ω. 2. C includes probe and jig capacitance. 3. ll diodes are 1N3064 or equivalent. 4. oad circuit is required on a given output only where table III indicates on that output. oad circuits may otherwise be omitted. FIURE 4. Waveforms for propagation delay time and test circuit for device type 01 Continued. 21

22 MI-M-38510/78 SUM MODE TEST TE FUNCTION UTS: S0 = S3 =, S1 = S2 = M = 0 V TEST t 1 t 1 t 1 t 1 t 3 t 3 t 3 t 3 t 5 t 5 UT UNDER TEST i 1/ OTER UT SME IT Y Y i None i i None OTER DT UTS Y Remaining and Remaining and i i None None i i None None i None i Remaining Y UT UNDER TEST UT WVEFORM C n ny F i 1 C n ny F i 1 Remaining and C n Remaining and C n Remaining, C n / In i, i, and F i, i = 0, 1, 2, or 3. FIURE 4. Waveforms for propagation delay time and test circuit for device type 01 Continued. FUNCTION UTS: S0 = S3 =, S1 = S2 = M = 0 V TEST UT UNDER TEST OTER UT SME IT Y Y OTER DT UTS Y Y UT UNDER TEST UT WVEFORM t 5 t 5 t 7 t 7 t 9 t 9 t 11 t 11 t 11 t 11 Remaining Remaining i None i 1, C n C n None None ll ll ny F i 1 C n None None ll ll C n+4 1 Remaining Remaining i None i C and C n+4 2 n Remaining Remaining i None i C and C n+4 2 n 1/ In i, i, and F i, i = 0, 1, 2, or 3. FIURE 4. Waveforms for propagation delay time and test circuit for device type 01 Continued. 22

23 MI-M-38510/78 DIFF MODE TEST TE FUNCTION UTS: S1 = S2 =, S0 = S3 = M = 0 V TEST UT UNDER TEST OTER UT SME IT Y Y OTER DT UTS Y Y UT UNDER TEST UT WVEFORM t 2 t 2 i 1/ None i Remaining Remaining, C n ny F i 1 t 2 t 2 i i None Remaining Remaining, C n ny F i 2 t 4 t 4 i None i None Remaining and, C n 1 t 4 t 4 i i None None Remaining and, C n 2 t 6 t 6 i i None None Remaining and, C n 1 t 6 t 6 i None i None Remaining and, C n 2 t 8 t 8 i None i Remaining Remaining, C n = 1 t 8 t 8 i i None Remaining Remaining, C n = 2 t 10 t 10 C n None None ll and None C n+4 1 t 12 t 12 i i None None Remaining and, C n C n+4 2 t 12 t 12 i None i None Remaining and, C n C n+4 1 1/ In i, i, and F i, i = 0, 1, 2, or 3. FIURE 4. Waveforms for propagation delay time and test circuit for device type 01 Continued. 23

24 MI-M-38510/78 TEST t 13 t 13 UT UNDER TEST i 1/ OIC MODE TEST TE FUNCTION UTS: S1 = S2 = M =, S0 = S3 = 0 V OTER UT SME IT Y Y OTER DT UTS Y None i None Y Remaining and, C n UT UNDER TEST UT WVEFORM ny F i 1 t 13 t 13 i None i None Remaining and, C n ny F i 1 1/ In i, i and F i, i = 0, 1, 2, or 3. FIURE 4. Waveforms for propagation delay time and test circuit for device type 01 Continued. 24

25 MI-M-38510/78 NOTES: 1. The input pulse has the following characteristics: RR 1 Mz, t r = t f 2.5 ns. Z 50 Ω. 2. C includes probe and jig capacitance. 3. ll diodes are 1N3064 or equivalent. 4. oad circuit is required on a given output only where table III indicates on that output. oad circuits may otherwise be omitted. FIURE 4. Waveforms for propagation delay time and test circuit for device type 02 Continued. 25

26 Subgroup Symbol MI- STD- 883 method X,3 5/ J,K,Z Test no. TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n V CC Measured terminal Test limits 1 T C =+25 C V O m -1 m -1 m -1 m -1 m -1 m -1 m 4.5 V 2.5 V 26 V O m m m m m m m m = I I V M -1-2 m I I2 I I3 I I V 0.5 V 0.5 V 0.5 V 0.5 V I I V Cn I I V 5.5V I I M 50 µ I I2 I I See footnotes at end of device type V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V S0 S3 S1 S S0 S MI-M-38510/78

27 TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open). Subgroup 1 T C =+25 C MI- X,3 5/ STD- Symbol 883 J,K,Z method Test no. I I S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n I I5 43 Cn 250 I I6 44 M 1 m V CC Measured terminal S1 S2 Test limits µ 27 I I7 I I8 I I I I10 57 Cn I OS I OS2 59 I OS I CC V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V V CC 180 I CC V 4.5 V 4.5 V 4.5 V 4.5 V V CC S0 S3 S1 S2 MI-M-38510/78 V IC m m See footnotes at end of device type m -18 m -18 m -18 m -18 m -18 m -18 m -18 m -18 m -18 m -18 m -18 m 4.5 V 0 0 S3 S2 S1 S0 Cn M V

28 TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open). X,3 5/ J,K,Z Test limits Subgroup Symbol MI- STD- 883 method Test no. 0 0 S3 S2 S1 S0 Cn M 0 F 1 F 2 F 3 F = C n V CC Measured terminal 1 T C =+25 C I CEX V = 1 m 2 Same tests, terminal conditions, and limits as for subgroup 1, except T C = +125 C, and V IC tests are omitted. V I = 0.7 V dc and V O (max) = 0.45 V dc. 3 Same tests, terminal conditions, and limits as for subgroup 1, except T C = -55 C, and V IC tests are omitted. 7 T C =+25 C Func- tional tests 1/ 4/ / 2/ 2/ 2/ 2/ 2/ 2/ 2/ 3/ 3/ 3/ 3/ 3/ 3/ 3/ 3/ 2/ 2/ 2/ 2/ 2/ 2/ 4.5 V ll output or as shown 3/ 8 1/ 4/ Same tests, terminal conditions, and limits as for subgroup 7, except T C = +125 C and -55 C. 9 T C =+25 C t (Fig. 4) V ns See footnotes at end of device type 01. MI-M-38510/78 28

29 Subgroup Symbol MI- STD- 883 method X,3 5/ J,K,Z Test no. TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n V CC Measured terminal Test limits 9 T C =+25 C t (Fig. 4) V 5.0 V ns 29 t 2 t MI-M-38510/78 t t V t V See footnotes at end of device type

30 30 Subgroup Symbol 9 T C =+25 C MI- STD- 883 method t (Fig. 4) t 5 t 5 t 6 t 6 X,3 5/ J,K,Z Test no TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n t Cn 14 t Cn 14 t See footnotes at end of device type V V CC 5.0 V Measured terminal = = = = = = = = Test limits ns MI-M-38510/78

31 Subgroup 9 T C =+25 C Symbol MI- STD- 883 method t (Fig. 4) X,3 5/ J,K,Z Test no TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 1 F 2 F 3 = C n t Cn 13 t Cn t Cn t Cn V CC 5.0 V Measured terminal = = = = = = = = Test limits 2 27 ns 31 t MI-M-38510/78 t t t See footnotes at end of device type

32 Subgroup 9 T C =+25 C Symbol MI- STD- 883 method t (Fig. 4) X,3 5/ J,K,Z Test no TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n V CC 5.0 V Measured terminal Test limits 2 26 ns T C =+125 C t 13 t V 2.7V MI-M-38510/78 t t t See footnotes at end of device type

33 Subgroup 10 T C =+125 C Symbol MI- STD- 883 method t (Fig. 4) X,3 5/ J,K,Z Test no TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n V CC 5.0 V Measured terminal Test limits 2 16 ns t t 4 t MI-M-38510/78 t V t See footnotes at end of device type

34 Subgroup 10 T C =+125 C Symbol MI- STD- 883 method t (Fig. 4) X,3 5/ J,K,Z Test no TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n V 2.7V V CC 5.0V Measured terminal Test limits 2 20 ns 34 t t V 2.7V Cn 16 t Cn 16 t 8 t t Cn 14.5 t Cn t Cn t Cn 2.7V 2.7V 2.7V 2.7V 2.7V 2.7V = = = = = = = = = = = = = = = = MI-M-38510/78 t See footnotes at end of device type V

35 Subgroup Symbol MI- STD- 883 method X,3 5/ J,K,Z Test no. TE III. roup inspection for device type 01 Continued. Terminal conditions (pins not designated may be,, or open) S3 S2 S1 S0 Cn M F 0 F 1 F 2 F 3 = C n V CC Measured terminal Test limits 10 T C =+125 C t (Fig. 4) V 5.0 V ns 35 t 12 t MI-M-38510/78 t t Same tests, terminal conditions, and limits as subgroup 10, except T C = -55 C. 1/ Tests shall be performed in sequence. 2/ Inputs: = 2.4 V, = 0.4 V. 3/ Outputs: 1.5 V, 1.5 V. 4/ Only a summary of attributes data is required. 5/ 3 and X pins not designated are NC

36 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 1 T C =+25 C V O V -1 m -1 m -1 m -1 m -1 m 4.5 V Cn+X 2.5 V V O m 20 m 20 m 20 m 20 m Cn+X V IC m -18 m -18 m -18 m -18 m -18 m -18 m -18 m -18 m Cn MI-M-38510/78 I I V 5.5V m I I V I I V I I V I I V I I V I I V Cn -1-2 I I V I I V I I µ I I I I See footnotes at end of device type 02.

37 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 1 T C =+25 C I I µ I I I I I I7 35 Cn 50 I I I I I I m I I I I I I I I I I MI-M-38510/78 I I16 44 Cn I I I I I OS I CC V CC 99 I CC V CC 65 See footnotes at end of device type 02

38 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 1 T C =+25 C I CEX V Cn+X 250 µ 2 Same tests, terminal conditions, and limits as for subgroup 1, except T C = +125 C and V IC tests are omitted. V I = 0.7 V dc and V O (max) = 0.45 V dc. 3 Same tests, terminal conditions, and limits as for subgroup 1, except T C = -55 C and V IC tests are omitted T C =+25 C Functional tests 1/ 4/ / 2/ 2/ 2/ 2/ 2/ 3/ 3/ 3/ 3/ 3/ 2/ 2/ 2/ 4.5V ll output or as shown 3/ MI-M-38510/78 8 1/ 4/ Same tests, terminal conditions, and limits as for subgroup 7, except T C = +125 C and -55 C. 9 T C =+25 C t (Fig. 4) V 5.0 V Cn Cn+X 2 12 ns t 1 74 Cn Cn+X t 1 75 Cn t 1 76 Cn t 1 77 Cn t 1 78 Cn t Cn+X See footnotes at end of device type 02.

39 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 9 T C =+25 C t (Fig. 4) V 0 Cn+X 2 9 ns t t t t t t t MI-M-38510/78 t t t t Cn+X t Cn+X t t See footnotes at end of device type 02.

40 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 9 T C =+25 C t (Fig. 4) V ns t t t t t t t MI-M-38510/78 t t t t t t t t t t See footnotes at end of device type 02.

41 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 9 T C =+25 C t (Fig. 4) V ns t t t t t t t t t t MI-M-38510/78 t T C =+125 C t Cn Cn+X t Cn Cn+X t Cn t Cn t Cn t Cn See footnotes at end of device type 02.

42 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 10 T C =+125 C t (Fig. 4) V 0 Cn+X 2 11 ns t Cn+X t t t t t MI-M-38510/78 t t t t t t Cn+X t Cn+X See footnotes at end of device type 02.

43 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 10 T C =+125 C t (Fig. 4) V ns t t t t t t t MI-M-38510/78 t t t t t t t t t See footnotes at end of device type 02.

44 Subgroup Symbol MI- STD-883 method E,F Test no. TE III. roup inspection for device type 02 Continued. Terminal conditions (pins not designated may be,, or open) Measured Test limits terminal C n+z C n+y C n+x C n 2 2 V CC 10 T C =+125 C t (Fig. 4) V ns t t t t t V t t t t MI-M-38510/78 t t t t t Same tests, terminal conditions, and limits as subgroup 10, except T C = -55 C. 1/ Tests shall be performed in sequence. 2/ Inputs: = 2.4 V, = 0.4 V. 3/ Outputs: 1.5 V, 1.5 V. 4/ Only a summary of attributes data is required.

45 MI-M-38510/78 5. CK 5.1 ackaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is be performed by DoD or in-house contracr personnel, these personnel need contact the responsible packaging activity ascertain packaging requirements. ackaging requirements are maintained by the Invenry Control oint's packaging activity within the Military Service or Defense gency, or within the military service's system command. ackaging data retrieval is available from the managing Military Department's or Defense gency's aumated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanary nature that may be helpful, but it is not mandary) 6.1 Intended use. Microcircuits conforming this specification are intended for logistic support of existing equipment. 6.2 cquisition requirements. cquisition documents should specify the following: a. Title, number, and date of the specification. b. and compliance identifier, if applicable (see 1.2). c. Requirements for delivery of one copy of the conformance inspection data pertinent the device inspection lot be supplied with each shipment by the device manufacturer, if applicable. d. Requirement for certificate of compliance, if applicable. e. Requirements for notification of change of product or process the acquiring activity in addition notification the qualifying activity, if applicable. f. Requirements for failure analysis (including required test condition of method 5003 of MI-STD-883), corrective action and reporting of results, if applicable. g. Requirements for product assurance options. h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements shall not affect the part number. Unless otherwise specified, these requirements will not apply direct purchase by or direct shipment the overnment. i. Requirements for "JN" marking. j. ackaging requirements (see 5.1). 6.3 Qualification. With respect products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers ist QM whether or not such products have actually been so listed by that date. The attention of the contracrs is called these requirements, and manufacturers are urged arrange have the products that they propose offer the Federal overnment tested for qualification in order that they may be eligible be awarded contracts or purchase orders for the products covered by this specification. Information pertaining qualification of products may be obtained from DSCC-VQ, 3990 E. road Street, Columbus, Ohio Superseding information. The requirements of MI-M have been superseded take advantage of the available Qualified Manufacturer isting (QM) system provided by MI-RF revious references MI-M in this document have been replaced by appropriate references MI-RF ll technical requirements now consist of this specification and MI-RF The MI-M specification sheet number and have been retained avoid adversely impacting existing government logistics systems and contracr's parts lists. 6.5 bbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined in MI-RF and MI-DK-1331, and as follows:... Electrical ground (common terminal) V... Voltage level at an input terminal. I... Current flowing in an input terminal. 6.6 ogistic support. ead materials and finishes (see 3.4) are interchangeable. Unless otherwise specified, microcircuits acquired for overnment logistic support will be acquired device class (see 1.2.2), lead material and finish (see 3.4). onger length leads and lead forming shall not affect the part number. 45

46 MI-M-38510/ Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered by this specification will functionally replace the listed generic industry type. eneric industry microcircuit types may not have equivalent operational performance characteristics across military temperature ranges or reliability facrs equivalent MI-M device types and may have slight physical variations in relation case size. The presence of this information should not be deemed as permitting substitution of generic industry types for MI-M types or as a waiver of any of the provisions of MI-RF Device type Commercial type 01 54S S Manufacturers designations. Manufacturers circuits included in this specification are designated as shown in table IV. 6.9 Changes from previous issue. Marginal notations are not used in this revision identify changes with respect the previous issue, due the extent of the changes. TE IV. Manufacturers Designations. Circuits Device type Commercial Type Texas Instruments Signetics Corp S181 X X 02 54S182 X Cusdians: rmy CR Navy - EC ir Force 11 D-CC reparing activity: D - CC (roject ) Review activities: rmy MI, SM Navy S, C, MC, S, TD ir Force 03, 19, 99. NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the SSIST Online database at 46