LXA16T600C Qspeed Family

Transcription

1 Qspeed Family 6 V, 16 A X-Series Common-Cathode Diode Product Summary I F(AVG) per diode 8 A V RRM 6 V Q RR (Typ at 12 C) 82 nc I RRM (Typ at 12 C) 3. A Softness t b /t a (Typ at 12 C). Pin Assignment TO-2AB A1 K A2 RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC General Description This device has the lowest Q RR of any 6V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications Power Factor Correction (PFC) Boost Diode Motor drive circuits DC-AC inverters Features Low Q RR, Low I RRM, Low t RR High di F /dt capable (1A/µs) Soft recovery Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size & count Enables extremely fast switching Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V RRM Peak repetitive reverse voltage 6 V I F(AVG) Average forward current Per Diode, T J = 1 C, T C = 122 C 8 A Per Device, T J = 1 C, T C = 122 C 16 A I FSM Non-repetitive peak surge current 6 Hz, ½ cycle 6 A I FSM Non-repetitive peak surge current ½ cycle of t = 28 µs Sinusoid, T C = 2 C 3 A T J Maximum junction temperature 1 C T STG Storage temperature to 1 C Lead soldering temperature Leads at 1.6mm from case, 1 sec 3 C P D Power dissipation T C = 2 C 83 W Thermal Resistance Symbol Resistance from: Conditions Rating Units R θja Junction to ambient TO-2AB 62 C/W Per Diode 1. C/W R θjc Junction to case Per Device.8 C/W January 11

2 Electrical Specifications at T J = 2 C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units DC Characteristics per diode I R Reverse current per diode V R = 6 V, T J = 2 C µa V R = 6 V, T J = 12 C ma V F Forward voltage per diode I F = 8 A, T J = 2 C V I F = 8 A, T J = 1 C V C J Junction capacitance per diode V R = 1 V, 1 MHz pf Dynamic Characteristics per diode t RR Reverse recovery time, di F /dt = A/µs T J =2 C ns per diode V R =4, I F =8 A T J =12 C ns Q RR Reverse recovery charge, di F /dt = A/µs T J =2 C nc per diode V R =4, I F =8 A T J =12 C nc I RRM Maximum reverse di F /dt = A/µs T J =2 C A recovery current, per diode V R =4, I F =8 A T J =12 C A S t di T J =2 C Softness per diode= b F /dt = A/µs V t R =4, I F =8 A T J =12 C -. - a Note to component engineers: X-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-3.) VR L1 D1 DUT I F di F /dt t a t RR t b Pulse generator 1V + Rg Q1.1xI RRM I RRM Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit Rev 1.1 1/11 2

3 Electrical Specifications at T J = 2 C (unless otherwise specified) IF (A) Tj=12C Tj=2C V F (V) Cj (pf) V R (V) Figure 3. Typical I F vs V F Figure 4. Typical C j vs V R 16 di/dt=1a/us 4 di/dt=a/us 14 3 QRR (nc) di/dt=a/us di/dt=a/us trr (ns) di/dt=a/us di/dt=1a/us I F (A) I F (A) Figure. Typical Q RR vs I F at T J = 12 C Figure 6. Typical t RR vs I F at T j = 12 C IF(AV) (A) Case Temperature, T C ( o C) P (W) Case Temperature, T C ( o C) Figure 7. DC Current Derating Curve Figure 8. Power Derating Curve 3 Rev 1.1 1/11

4 I F (PEAK) (A) Duty=1% Duty=3% Duty=% T C ( C) DC Figure 9. I F (Peak) vs T C, f=7 khz 1 LXA16T6C D=. D =.3.1 D=.1 Zth(j-c)/Rth(j-c) D=. D=.2.1 D=.1 D=. D=.2 Single Pulse.1 1.E-6 1.E- 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ t1(sec) Figure 1. Normalized Maximum Transient Thermal Impedance Rev 1.1 1/11 4

5 Dimensional Outline Drawings TO-2AB E A Q øp D D1 b2 L1 L b c e e1 A1 A2 Millimeters Dim MIN MAX A A A b b C D D E e e L L1 3.9 ØP Q Mechanical Mounting Maximum Torque / Pressure specification Method Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm 2 ) or 17 lbf/in 2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 3 C, for up to 1 seconds. See Application Note AN-33, for more details. Ordering Information Part Number Package Packing LXA16T6C TO-2AB units/tube The information contained in this document is subject to change without notice. Rev 1.1 1/11

6 Revision Notes Date 1. Released by Qspeed 6/1 1.1 Converted to Power Integrations Document 1/11 Rev 1.1 1/11 6

7 For the latest updates, visit our website: Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations patents may be found at Power Integrations grants its customers a license under certain patent rights as set forth at The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. Copyright 11 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 24 Hellyer Avenue San Jose, CA 9138, USA. Main: Customer Service: Phone: Fax: usasales@powerint.com GERMANY Rueckertstrasse 3 D-8336, Munich Germany Phone: Fax: eurosales@powerint.com JAPAN Kosei Dai-3 Building , Shin-Yokohama, Kohoku-ku, Yokohama-shi, Kanagawa Japan Phone: Fax: japansales@powerint.com TAIWAN F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu District Taipei 114, Taiwan R.O.C. Phone: Fax: taiwansales@powerint.com CHINA (SHANGHAI) Rm 161/161, Tower 1 Kerry Everbright City No. 218 Tianmu Road West Shanghai, P.R.C. 7 Phone: Fax: chinasales@powerint.com INDIA #1, 14 th Main Road Vasanthanagar Bangalore-62 India Phone: Fax: indiasales@powerint.com KOREA RM 62, 6FL Korea City Air Terminal B/D, 19-6 Samsung-Dong, Kangnam-Gu, Seoul, Korea Phone: Fax: koreasales@powerint.com EUROPE HQ 1st Floor, St. James s House East Street, Farnham Surrey GU9 7TJ United Kingdom Phone: +44 () Fax: +44 () eurosales@powerint.com CHINA (SHENZHEN) Rm A, B & C 4 th Floor, Block C, Electronics Science and Technology Building 7 Shennan Zhong Road Shenzhen, Guangdong, P.R.C Phone: Fax: chinasales@powerint.com ITALY Via De Amicis 2 91 Bresso MI Italy Phone: Fax: eurosales@powerint.com SINGAPORE 1 Newton Road, #19-1/ Goldhill Plaza Singapore, 389 Phone: Fax: singaporesales@powerint.com APPLICATIONS HOTLINE World Wide APPLICATIONS FAX World Wide Rev 1.1 1/11