Near-Infrared to Vacuum Ultraviolet (VUV) Dielectric Properties of LaAlO 3
|
|
- Dorthy Colleen Hutchinson
- 5 years ago
- Views:
Transcription
1 Near-Infrared to Vacuum Ultraviolet (VUV) Dielectric Properties of LaAlO 3 Jacqueline Cooke 1, Tom Tiwald, Nuwanjula Samarasingha 1, Nalin Fernando 1, Stefan Zollner 1 1. Department of Physics, New Mexico State University, Las Cruces, NM J.A. Woollam Co., Lincoln, NE
2 Content Why measure LaAlO 3? What is LaAlO 3? Details about ellipsometry measurements LaAlO 3 transmission and absorption coefficients LaAlO 3 measured from near-infrared to ultraviolet Conclusion
3 We want to integrate and improve electronics and photonics LaAlO 3 is of interest as a substrate used for oxide epitaxial growth of thin films. It is mainly used as an insulator. Research is being conducted on the interface of LaAlO 3 when it is epitaxially grown on SrTiO 3. Because of this the properties of LaAlO 3 are useful yet not very well known. 3
4 What is LaAlO 3? Inorganic ceramic oxide. High-k dielectric. It has a perovskite cubic or rhombohedral crystal structure (ABO 3 ). Used as a single crystal substrate for growth of epitaxial thin films (normally for high temperature superconductors and magnetic or ferroelectric thin films). J.-X. Shen, A. Schleife, A. Janotti and C. G. Van de Walle, "Effects of La 5d and 4f states on the electronic and optical properties of LaAlO3," Physical Review B, vol. 94, no. 0503, pp. 1-7,
5 Ellipsometry: How does it work? We measure the change in the polarization state of light, when it is reflected by a flat surface. Monochromator or Interferometer (λ) detector J.A. Woollam polarizer Compensator analyzer NMSU Φ Sample 5
6 Spectroscopic Ellipsometry: Theory 6
7 Ellipsometric Data Psi Data Delta Data Brewster Angle at 65 Incidence Brewster Angle at 65 Incidence 7
8 Pseudo-Dielectric Function of LaAlO 3 Tauc-Lorentz Oscillator Model 1 E 0 n AE ( E n n 0 C( E E n0 ) n E C g ) E n for for ( E n ( E n E g E g ) ) E (ev) A Γ (ev) E g (ev) TL1 6.78(8) 18.9(7) ev 0.68(3) 4.73(8) UV pole 10.65(9) 30.8(8) ev IR pole 0.05(f) 0.019(4) ev Surface roughness: 13.76Å MSE: T. Willett-Gies, E. DeLong and S. Zollner, "Vibrational Properties of LaAlO3 from Fourier- Transform Infrared Ellipsometry," Thin Solid Films, vol. 571, no. Part 3, pp ,
9 Near-IR/UV Ellipsometry Data Pseudo-Absorption Coefficient and Transmission Data Surface roughness 4000 Å 9
10 Near-IR/UV Ellipsometry Data Cont. Direct Band Gap Indirect Band Gap Band Gap: 5.6 ev Indirect Gap: 5.55 ev Indirect Band Gap Direct Band Gap Consistent with Jimmy-Xyan Shen s and Seung-Gu Lim s publications J.-X. Shen, A. Schleife, A. Janotti and C. G. Van de Walle, "Effects of La 5d and 4f states on the electronic and optical properties of LaAlO3," Physical Review B, vol. 94, no. 0503, pp. 1-7, 016. S.-G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, S. D. G., B. A. M., R. Uecker, P. Reiche, J. L. Freeouf and G. Lucovsky, "Dielectric functions and optical bandgaps of high-k dielectric for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry," Journal of Applied Physics, pp ,
11 VUV Experimental Data Psi Data Delta Data Brewster Angle at 65 Incidence Brewster Angle at 65 Incidence 11
12 VUV Pseudo-Dielectric Function Parametric Oscillator Model E (ev) A Γ (ev) Discont Left of CP Right of CP (f) Mid E (ev) Mid Amp (ev) Mid E (ev) Mid Amp (ev) (8) 9.847(8)eV 17.14(8) 0.833(3) 0.05(6) 0.008() 0.741(7) 0.053(3) 7.966(6) 1.754(8) ev 11.40(5) -0.49(9) 0.013(8) 0.05(4) 0.989() 0.98(6) 3 8.9(1) 4.6(6) ev (5) 0.645(4) 0.194(1) 0.194(1) 0.4().333(4) 4 1(f) UV pole 18(f) 350.3(3) ev IR pole 0.05(f) 0.07(4) ev Surface roughness:.91å MSE:
13 VUV Dielectric Function Crystal-field splitting of La(4f) states cause the seven bands to split into three directions. J.-X. Shen, A. Schleife, A. Janotti and C. G. Van de Walle, "Effects of La 5d and 4f states on the electronic and optical properties of LaAlO3," Physical Review B, vol. 94, no. 0503, pp. 1-7, 016. S.-G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, S. D. G., B. A. M., R. Uecker, P. Reiche, J. L. Freeouf and G. Lucovsky, "Dielectric functions and optical bandgaps of high-k dielectric for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry," Journal of Applied Physics, pp ,
14 Conclusion We modeled the pseudo-dielectric function of LaAlO 3 using a Tauc-Lorentz oscillator. Calculated the band gap to be 5.6 ev and an indirect band gap to be 5.55 ev which is consistent with previously published works. We also modeled the pseudo-dielectric function using parametric oscillator model with three oscillators. From the model we determined the dielectric function of LaAlO 3. Absorption above 7 ev arises from O(p) valence band to the La(4f) conduction band states. 14
15 My Research Group ellipsometry.nmsu.edu 15
Electronic band structure and infrared lattice dynamics of NiO
Electronic band structure and infrared lattice dynamics of NiO Cayla M. Nelson, Travis I. Willett-Gies, Ayana Ghosh, Lina S. Abdallah, Stefan Zollner Department of Physics, New Mexico State University,
More information3B: Review. Nina Hong. U Penn, February J.A. Woollam Co., Inc. 1
2014 J.A. Woollam Co., Inc. www.jawoollam.com 1 3B: Review Nina Hong U Penn, February 2014 2014 J.A. Woollam Co., Inc. www.jawoollam.com 2 Review 1A: Introduction to WVASE: Fun Quiz! 1B: Cauchy 2A: Pt-by-Pt
More informationEllipsometry Tutorial
Introduction Ellipsometry Tutorial [http://www.jawoollam.com/tutorial_1.html] This tutorial provided by the J. A. Woollam Co. is an introduction to ellipsometry for anyone interested in learning more about
More informationOptical properties of bulk and thin-film SrTiO 3 on Si and Pt
University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Faculty Publications from the Department of Electrical and Computer Engineering Electrical & Computer Engineering, Department
More informationSpectroscopic Ellipsometry Analysis of Opaque Gold Film for Epner Technology
Customer Summary The optical constants n &k of an opaque gold film from Epner Technology were measured using J.A. Woollam VASE and IR-VASE spectroscopic ellipsometers over the wavelength range of.1 to
More informationSession 3B Using the Gen-Osc Layer to Fit Data
Session 3B Using the Gen-Osc Layer to Fit Data Andrew Martin UPenn, February 2014 2014 J.A. Woollam Co., Inc. www.jawoollam.com 1 Using Gen-Osc to Fit Data Pre-built Existing Genosc Layer Library optical
More informationNON-DESTRUCTIVE EVALUATION IN MANUFACTURING USING SPECTROSCOPIC. John A. Woollam and Paul G. Snyder
NON-DESTRUCTIVE EVALUATION IN MANUFACTURING USING SPECTROSCOPIC ELLIPSOMETRY John A. Woollam and Paul G. Snyder Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering
More informationLecture 20 Optical Characterization 2
Lecture 20 Optical Characterization 2 Schroder: Chapters 2, 7, 10 1/68 Announcements Homework 5/6: Is online now. Due Wednesday May 30th at 10:00am. I will return it the following Wednesday (6 th June).
More informationin this web service Cambridge University Press
High-k Materials Mat. Res. Soc. Symp. Proc. Vol. 670 2001 Materials Research Society Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics Ran Liu, Stefan Zollner, Peter Fejes,
More informationSupplementary Figure 1 Comparison between normalized and unnormalized reflectivity of
Supplementary Figures Supplementary Figure 1 Comparison between normalized and unnormalized reflectivity of bulk SrTiO 3. The normalized high-energy reflectivity (0.5 35 ev) of SrTiO 3 is compared to the
More informationVASE. J.A. Woollam Co., Inc. Ellipsometry Solutions
VASE J.A. Woollam Co., Inc. Ellipsometry Solutions Accurate Capabilities The VASE is our most accurate and versatile ellipsometer for research on all types of materials: semiconductors, dielectrics, polymers,
More informationAberration-corrected TEM studies on interface of multilayered-perovskite systems
Aberration-corrected TEM studies on interface of multilayered-perovskite systems By Lina Gunawan (0326114) Supervisor: Dr. Gianluigi Botton November 1, 2006 MSE 702(1) Presentation Outline Literature Review
More informationNear-Infrared Spectroscopy of Nitride Heterostructures EMILY FINAN ADVISOR: DR. OANA MALIS PURDUE UNIVERSITY REU PROGRAM AUGUST 2, 2012
Near-Infrared Spectroscopy of Nitride Heterostructures EMILY FINAN ADVISOR: DR. OANA MALIS PURDUE UNIVERSITY REU PROGRAM AUGUST 2, 2012 Introduction Experimental Condensed Matter Research Study of large
More informationBand gap engineering of pseudomorphic Ge 1-x-y Si x Sn y alloys on Ge for photonic applications
Ban gap engineering of pseuomorphic -x-y x Sn y alloys on for photonic applications Nalin Fernano, Ryan Hickey, John Hart, Ramsey Hazbun, Dainan Zhang, James Kolozey, Stefan Zollner, Department of Physics,
More information1.1 FEATURES OF SPECTROSCOPIC ELLIPSOMETRY
1 Introduction to Spectroscopic Ellipsometry Because of recent advances in computer technology, the spectroscopic ellipsometry technique has developed rapidly. As a result, the application area of spectroscopic
More informationReal-time and in-line Optical monitoring of Functional Nano-Layer Deposition on Flexible Polymeric Substrates
Real-time and in-line Optical monitoring of Functional Nano-Layer Deposition on Flexible Polymeric Substrates S. Logothetidis Lab for Thin Films, Nanosystems & Nanometrology, Aristotle University of Thessaloniki,
More informationWhat so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface
What so special about LaAlO3/SrTiO3 interface? Magnetism, Superconductivity and their coexistence at the interface Pramod Verma Indian Institute of Science, Bangalore 560012 July 24, 2014 Pramod Verma
More informationOptical and Photonic Glasses. Lecture 15. Optical Properties - Polarization, Absorption and Color. Professor Rui Almeida
Optical and Photonic Glasses : Optical Properties - Polarization, Absorption and Color Professor Rui Almeida International Materials Institute For New Functionality in Glass Lehigh University 21 µm 9.1
More informationDUV ( nm ) Characterization of Materials: A new instrument, the Purged UV Spectroscopic Ellipsometer,
WISE 2000, International Workshop on Spectroscopic Ellipsometry, 8 9 May 2000 DUV (150 350nm ) Characterization of Materials: A new instrument, the Purged UV Spectroscopic Ellipsometer, Pierre BOHER,,
More informationSpectroscopy of correlated electrons in nickelates and titanates
Spectroscopy of correlated electrons in nickelates and titanates Metal-insulator transitions and novel 2DEGs Dept. of Physics University of CA, Santa Barbara Strong Electron Correlations Materials which
More information2A: Absorbing Materials Pt-by-Pt and GenOsc
2014 J.A. Woollam Co., Inc. www.jawoollam.com 1 2A: Absorbing Materials Pt-by-Pt and GenOsc Nina Hong U Penn, February 2014 2014 J.A. Woollam Co., Inc. www.jawoollam.com 2 Pt-by-Pt Fit UV Absorbing Films
More informationSupplementary Figure 1
Supplementary Figure 1 XRD patterns and TEM image of the SrNbO 3 film grown on LaAlO 3(001) substrate. The film was deposited under oxygen partial pressure of 5 10-6 Torr. (a) θ-2θ scan, where * indicates
More information2. Transparent Films. Neha Singh October 2010
2. Transparent Films Neha Singh October 2010 Course Overview Day 1: Introduction and Theory Transparent Films Microstructure EMA Surface roughness Ultra thin films Uniqueness test UV Absorption Point-by-point
More informationSolar Cell Materials and Device Characterization
Solar Cell Materials and Device Characterization April 3, 2012 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles and Varieties of Solar Energy (PHYS 4400) and Fundamentals
More informationInfrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN S Schoeche, T Hofmann, Vanya Darakchieva, N Ben Sedrine, X Wang, A Yoshikawa
More informationUrbach tail extension of Tauc-Lorentz model dielectric function
Urbach tail extension of Tauc-Lorentz model dielectric function M. Foldyna Department of Physics, Technical University Ostrava, 17. listopadu 15, 708 33 Ostrava-Poruba, Czech Republic martin.foldyna@vsb.cz
More informationOPTICAL ANALYSIS OF ZnO THIN FILMS USING SPECTROSCOPIC ELLIPSOMETRY AND REFLECTOMETRY.
OPTICAL ANALYSIS OF ZnO THIN FILMS USING SPECTROSCOPIC ELLIPSOMETRY AND REFLECTOMETRY Katarína Bombarová 1, Juraj Chlpík 1,2, Soňa Flickyngerová 3, Ivan Novotný 3, Július Cirák 1 1 Institute of Nuclear
More informationPhysics of Semiconductors
Physics of Semiconductors 9 th 2016.6.13 Shingo Katsumoto Department of Physics and Institute for Solid State Physics University of Tokyo Site for uploading answer sheet Outline today Answer to the question
More informationOptical and Photonic Glasses. Lecture 13. Optical Glasses Absorption, Refraction and Dispersion. Professor Rui Almeida
Optical and Photonic Glasses : Optical Glasses Absorption, Refraction and Dispersion Professor Rui Almeida International Materials Institute For New Functionality in Glass Lehigh University OPTICAL PROPERTIES
More informationOptical Spectroscopies of Thin Films and Interfaces. Dietrich R. T. Zahn Institut für Physik, Technische Universität Chemnitz, Germany
Optical Spectroscopies of Thin Films and Interfaces Dietrich R. T. Zahn Institut für Physik, Technische Universität Chemnitz, Germany 1. Introduction 2. Vibrational Spectroscopies (Raman and Infrared)
More informationOptical Properties of Solid from DFT
Optical Properties of Solid from DFT 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India & Center for Materials Science and Nanotechnology, University of Oslo, Norway http://folk.uio.no/ravi/cmt15
More informationVibrational Spectroscopies. C-874 University of Delaware
Vibrational Spectroscopies C-874 University of Delaware Vibrational Spectroscopies..everything that living things do can be understood in terms of the jigglings and wigglings of atoms.. R. P. Feymann Vibrational
More informationLaser Basics. What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels.
What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels. Electron energy levels in an hydrogen atom n=5 n=4 - + n=3 n=2 13.6 = [ev]
More informationChemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
More informationSpectroscopic Ellipsometry (SE) in Photovoltaic Applications
Spectroscopic Ellipsometry (SE) in Photovoltaic Applications Jianing Sun, James Hilfiker, Greg Pribil, and John Woollam c-si PVMC Metrology Workshop July 2012, San Francisco PV key issues Material selection
More informationHolcomb Group Capabilities
Holcomb Group Capabilities Synchrotron Radiation & Ultrafast Optics West Virginia University mikel.holcomb@mail.wvu.edu The Physicists New Playground The interface is the device. - Herbert Kroemer, beginning
More informationOptical Spectroscopies of Thin Films and Interfaces. Dietrich R. T. Zahn Institut für Physik, Technische Universität Chemnitz, Germany
Optical Spectroscopies of Thin Films and Interfaces Dietrich R. T. Zahn Institut für Physik, Technische Universität Chemnitz, Germany 1. Introduction 2. Vibrational Spectroscopies (Raman) 3. Spectroscopic
More informationS-matrix approach for calculations of the optical properties of metallic-dielectric photonic crystal slabs
S-matrix approach for calculations of the optical properties of metallic-dielectric photonic crystal slabs N. I. Komarevskiy1,2, T. Weiss3, and S. G. Tikhodeev2 1 Faculty of Physics, Lomonosov Moscow State
More informationREPORT DOCUMENTATION PAGE
REPORT DOCUMENTATION PAGE Form Approved OMB NO. 0704-0188 Public Reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions,
More informationGoldhahn, Rüdiger; Cimalla, Volker; Ambacher, Oliver; Cobet, Christoph; Richter, Wolfgang; Esser, Norbert; Lu, Hai; William J.
Goldhahn, Rüdiger; Cimalla, Volker; Ambacher, Oliver; Cobet, Christoph; Richter, Wolfgang; Esser, Norbert; Lu, Hai; William J. Schaff: Anisotropy of the dielectric function for hexagonal InN Zuerst erschienen
More informationOptical Properties of Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Optical Properties of Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Light Matter Interaction Response to external electric
More informationSpectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation
Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation G. Droulers, a A. Beaumont, J. Beauvais, and D. Drouin Nanofabrication and Nanocharacterization Research Center,
More informationLecture 23 X-Ray & UV Techniques
Lecture 23 X-Ray & UV Techniques Schroder: Chapter 11.3 1/50 Announcements Homework 6/6: Will be online on later today. Due Wednesday June 6th at 10:00am. I will return it at the final exam (14 th June).
More informationSpectroscopic Ellipsometry and Cryogenic Capability
College of William and Mary W&M Publish College of William & Mary Undergraduate Honors Theses Theses, Dissertations, & Master Projects 5-2014 Spectroscopic Ellipsometry and Cryogenic Capability Arlough
More informationOPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS. Jin Zhong Zhang. World Scientific TECHNISCHE INFORMATIONSBIBLIOTHEK
OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS Jin Zhong Zhang University of California, Santa Cruz, USA TECHNISCHE INFORMATIONSBIBLIOTHEK Y World Scientific NEW JERSEY. t'on.don SINGAPORE «'BEIJING
More informationSpectroscopic studies ofthe electrical structure oftransition metal and rare earth complex oxides
Available online at www.sciencedirect.com Physica E 21 (24) 712 716 www.elsevier.com/locate/physe Spectroscopic studies ofthe electrical structure oftransition metal and rare earth complex oxides G. Lucovsky
More informationHighly Efficient Planar Perovskite Solar Cells through Band Alignment Engineering
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 2015 Highly Efficient Planar Perovskite Solar Cells through Band Alignment Engineering
More informationStructural and Optical Properties of ZnSe under Pressure
www.stmjournals.com Structural and Optical Properties of ZnSe under Pressure A. Asad, A. Afaq* Center of Excellence in Solid State Physics, University of the Punjab Lahore-54590, Pakistan Abstract The
More informationElectronic Properties of Materials An Introduction for Engineers
Rolf E. Hummel Electronic Properties of Materials An Introduction for Engineers With 219 Illustrations Springer-Verlag Berlin Heidelberg New York Tokyo Contents PARTI Fundamentals of Electron Theory CHAPTER
More informationChris G. Van de Walle
Complex oxide interfaces Chris G. Van de Walle Anderson Janotti, Lars Bjaalie, Luke Gordon, Burak Himmetoglu, K. Krishnaswamy Materials Department, University of California, Santa Barbara ES213 June 11-14,
More informationAP 5301/8301 Instrumental Methods of Analysis and Laboratory
1 AP 5301/8301 Instrumental Methods of Analysis and Laboratory Lecture 7 Optical spectroscopies Prof YU Kin Man E-mail: kinmanyu@cityu.edu.hk Tel: 3442-7813 Office: P6422 Lecture 7: outline 2 Introduction
More informationMSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
More informationInfrared Optical Material - CaF 2
Optics Application Infrared - CaF 2 Calcium Fluoride is used for optical windows, lenses and prisms in the 0.15 μm - 9 μm (ultraviolet to infrared) regions. The low power absorption has made this material
More informationLecture contents. Stress and strain Deformation potential. NNSE 618 Lecture #23
1 Lecture contents Stress and strain Deformation potential Few concepts from linear elasticity theory : Stress and Strain 6 independent components 2 Stress = force/area ( 3x3 symmetric tensor! ) ij ji
More informationReview of Optical Properties of Materials
Review of Optical Properties of Materials Review of optics Absorption in semiconductors: qualitative discussion Derivation of Optical Absorption Coefficient in Direct Semiconductors Photons When dealing
More informationWhen transition metals are incorporated into a certain site of the BiT, some of BiT-LaTMO 3
Band gap tuning in ferroelectric Bi 4 Ti 3 O 12 by alloying LaTMO 3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al) Woo Seok Choi and Ho Nyung Lee Materials Science and Technology Division, Oak Ridge National Laboratory,
More informationApplication of imaging ellipsometry: graphene - pinpointing and ellipsometric characterization ULRICH WURSTBAUER CHRISTIAN RÖLING PETER H.
Application of imaging ellipsometry: graphene - pinpointing and ellipsometric characterization ULRICH WURSTBAUER CHRISTIAN RÖLING PETER H. THIESEN Introduction to imaging ellipsometry Ellipsometry in general
More informationDETERMINING OPTICAL CONSTANTS FOR ThO 2 THIN FILMS SPUTTERED UNDER DIFFERENT BIAS VOLTAGES. FROM 1.2 TO 6.5 ev BY SPECTROSCOPIC ELLIPSOMETRY
DETERMINING OPTICAL CONSTANTS FOR ThO 2 THIN FILMS SPUTTERED UNDER DIFFERENT BIAS VOLTAGES FROM 1.2 TO 6.5 ev BY SPECTROSCOPIC ELLIPSOMETRY by William Ray Evans Submitted to Brigham Young University in
More informationUltraviolet-Visible and Infrared Spectrophotometry
Ultraviolet-Visible and Infrared Spectrophotometry Ahmad Aqel Ifseisi Assistant Professor of Analytical Chemistry College of Science, Department of Chemistry King Saud University P.O. Box 2455 Riyadh 11451
More informationSupporting Information. Effects of Environmental Water Absorption by. Film Transistor Performance and Mobility
Supporting Information Effects of Environmental Water Absorption by Solution-Deposited Al 2 O 3 Gate Dielectrics on Thin Film Transistor Performance and Mobility Trey B. Daunis, James M. H. Tran, and Julia
More informationModel dielectric function of amorphous materials including Urbach tail
Model dielectric function of amorphous materials including Urbach tail Martin Foldyna Department of Physics Technical University Ostrava, 17. listopadu 15, 708 33 Ostrava-Poruba Czech Republic Wofex 2003,
More informationAnalysis of Bandgap Energy and Refractive Index of Ferroelectric Perovskite Pbbatio 3
International Journal of Engineering Science Invention (IJESI) ISSN (Online): 2319 6734, ISSN (Print): 2319 6726 Volume 7 Issue 8 Ver II Aug 2018 PP 40-47 Analysis of Bandgap Energy and Refractive Index
More informationEECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
More informationsolidi physica status reprints
physica pss www.interscience.wiley.com reprints www.pss-rrl.com www.pss-b.com www.pss-a.com T N I R P E R Phys. Status Solidi C 7, No., 96 99 (010) / DOI 10.100/pssc.0098414 pss Optical characterisation
More informationCharacterisation of vibrational modes of adsorbed species
17.7.5 Characterisation of vibrational modes of adsorbed species Infrared spectroscopy (IR) See Ch.10. Infrared vibrational spectra originate in transitions between discrete vibrational energy levels of
More informationResonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation.
Optics of Surfaces & Interfaces - VIII September 10 th, 2009 Resonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation. Jimmy Price and Michael C. Downer Physics
More informationMethods of surface analysis
Methods of surface analysis Nanomaterials characterisation I RNDr. Věra Vodičková, PhD. Surface of solid matter: last monoatomic layer + absorbed monolayer physical properties are effected (crystal lattice
More informationSuperconductivity Induced Transparency
Superconductivity Induced Transparency Coskun Kocabas In this paper I will discuss the effect of the superconducting phase transition on the optical properties of the superconductors. Firstly I will give
More informationsin[( t 2 Home Problem Set #1 Due : September 10 (Wed), 2008
Home Problem Set #1 Due : September 10 (Wed), 008 1. Answer the following questions related to the wave-particle duality. (a) When an electron (mass m) is moving with the velocity of υ, what is the wave
More informationRefractive index profiling of CeO2 thin films using reverse engineering methods
Refractive index profiling of CeO2 thin films using reverse engineering methods V. Janicki, H. Zorc* Rudjer Boskovic Institute, P.O. Box 180, 10002 Zagreb, Croatia *Corresponding author: zorc@rudjer.irb.hr
More informationOptical Properties of Thin Semiconductor Films
Optical Properties of Thin Semiconductor Films Grolik Benno,KoppJoachim October, 31st 2003 1 Introduction Optical experiments provide a good way of examining the properties of semiconductors. Particulary
More informationSupplementary Figure 1: A potential scheme to electrically gate the graphene-based metamaterial. Here density. The voltage equals, where is the DC
Supplementary Figure 1: A potential scheme to electrically gate the graphene-based metamaterial. Here density. The voltage equals, where is the DC permittivity of the dielectric. is the surface charge
More informationLuminescence basics. Slide # 1
Luminescence basics Types of luminescence Cathodoluminescence: Luminescence due to recombination of EHPs created by energetic electrons. Example: CL mapping system Photoluminescence: Luminescence due to
More informationPropagation of Surface Plasmon Polariton in the Single Interface of Gallium Lanthanum Sulfide and Silver
PHOTONIC SENSORS / Vol., No., : 58 6 Propagation of Surface Plasmon Polariton in the Single Interface of Gallium Lanthanum Sulfide and Silver Rakibul Hasan SAGOR, Md. Ghulam SABER *, and Md. Ruhul AMIN
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More informationn ( λ ) is observed. Further, the bandgap of the ZnTe semiconductor is
Optical Spectroscopy Lennon O Naraigh, 0000 Date of Submission: 0 th May 004 Abstract: This experiment is an exercise in the principles and practice of optical spectroscopy. The continuous emission spectrum
More informationNear-band-gap CuPt-order-induced birefringence in Al 0.48 Ga 0.52 InP 2
University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Faculty Publications from the Department of Electrical and Computer Engineering Electrical & Computer Engineering, Department
More informationSolid-State Electronics
Solid-State Electronics 53 (29) 1273 1279 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: www.elsevier.com/locate/sse Comparisons between intrinsic bonding defects in
More informationThin Film Bi-based Perovskites for High Energy Density Capacitor Applications
..SKELETON.. Thin Film Bi-based Perovskites for High Energy Density Capacitor Applications Colin Shear Advisor: Dr. Brady Gibbons 2010 Table of Contents Chapter 1 Introduction... 1 1.1 Motivation and Objective...
More informationEE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
More informationand Technology, Luoyu Road 1037, Wuhan, , P. R. China. *Corresponding author. ciac - Shanghai P. R.
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry Supplementary Information For Journal of Materials Chemistry A Perovskite- @BiVO
More informationSUPPLEMENTARY INFORMATION
Topological insulator nanostructures for near-infrared transparent flexible electrodes Hailin Peng 1*, Wenhui Dang 1, Jie Cao 1, Yulin Chen 2,3, Di Wu 1, Wenshan Zheng 1, Hui Li 1, Zhi-Xun Shen 3,4, Zhongfan
More informationElectrodynamics of Annealed and Unannealed La 0.67 Sr 0.33 MnO 3 Thin Films. Daniel R. Branagan Honors Thesis
Electrodynamics of Annealed and Unannealed La 0.67 Sr 0.33 MnO 3 Thin Films Daniel R. Branagan Honors Thesis 1 Abstract I. Overview My project explored the impact of temperature and annealing on the optical
More informationSupplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: cm).
Supplementary Figure 1. A photographic image of directionally grown perovskite films on a glass substrate (size: 1.5 4.5 cm). 1 Supplementary Figure 2. Optical microscope images of MAPbI 3 films formed
More informationSupporting Information
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry 2018 Supporting Information A minimal non-radiative recombination loss for efficient
More informationFrom here we define metals, semimetals, semiconductors and insulators
Topic 11-1: Heat and Light for Intrinsic Semiconductors Summary: In this video we aim to discover how intrinsic semiconductors respond to heat and light. We first look at the response of semiconductors
More informationOptical Characterization of CdTe Films for Solar Cell Applications
Karachi University Journal of Science, 2011, 39, 1-5 1 Optical Characterization of CdTe Films for Solar Cell Applications Saeed Salem Babkair *, Najat Mohammad Al-Twarqi and Azhar Ahmad Ansari Department
More informationStructure analysis: Electron diffraction LEED TEM RHEED
Structure analysis: Electron diffraction LEED: Low Energy Electron Diffraction SPA-LEED: Spot Profile Analysis Low Energy Electron diffraction RHEED: Reflection High Energy Electron Diffraction TEM: Transmission
More informationSurface Sensitivity & Surface Specificity
Surface Sensitivity & Surface Specificity The problems of sensitivity and detection limits are common to all forms of spectroscopy. In its simplest form, the question of sensitivity boils down to whether
More informationOptical Properties of Copper Phthalocyanine(CuPc)Thin Films
Egypt. J. Sol., Vol. (24), No. (1), (2001) 11 Optical Properties of Copper Phthalocyanine(CuPc)Thin Films M. M. El-Nahass, F.S. Bahabri* ands.r.al-harbi* Faculty of Education, Ain Shams University, Cairo,
More informationThe Anisotropic Dielectric Function for Copper Phthalocyanine Thin Films
The Anisotropic Dielectric Function for Copper Phthalocyanine Thin Films O. D. Gordan and D.R.T. Zahn Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany Corresponding author:
More informationSpectroscopy at nanometer scale
Spectroscopy at nanometer scale 1. Physics of the spectroscopies 2. Spectroscopies for the bulk materials 3. Experimental setups for the spectroscopies 4. Physics and Chemistry of nanomaterials Various
More informationThe Electromagnetic Properties of Materials
The Electromagnetic Properties of Materials Electrical conduction Metals Semiconductors Insulators (dielectrics) Superconductors Magnetic materials Ferromagnetic materials Others Photonic Materials (optical)
More informationTemperature dependence of microwave and THz dielectric response
The 10 th European Meeting on Ferroelectricity, August 2003, Cambridge, UK Ferroelectrics, in press. Temperature dependence of microwave and THz dielectric response in Sr n+1 Ti n O 3n+1 (n=1-4) D. Noujni
More information6. Computational Design of Energy-related Materials
6. Computational Design of Energy-related Materials Contents 6.1 Atomistic Simulation Methods for Energy Materials 6.2 ab initio design of photovoltaic materials 6.3 Solid Ion Conductors for Fuel Cells
More informationELECTRONIC DEVICES AND CIRCUITS SUMMARY
ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,
More informationFall 2014 Nobby Kobayashi (Based on the notes by E.D.H Green and E.L Allen, SJSU) 1.0 Learning Objectives
University of California at Santa Cruz Electrical Engineering Department EE-145L: Properties of Materials Laboratory Lab 7: Optical Absorption, Photoluminescence Fall 2014 Nobby Kobayashi (Based on the
More informationIntroduction to X-ray Photoelectron Spectroscopy (XPS) XPS which makes use of the photoelectric effect, was developed in the mid-1960
Introduction to X-ray Photoelectron Spectroscopy (XPS) X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA) is a widely used technique to investigate
More informationPBS: FROM SOLIDS TO CLUSTERS
PBS: FROM SOLIDS TO CLUSTERS E. HOFFMANN AND P. ENTEL Theoretische Tieftemperaturphysik Gerhard-Mercator-Universität Duisburg, Lotharstraße 1 47048 Duisburg, Germany Semiconducting nanocrystallites like
More informationPhotoluminescence and Raman Spectroscopy on truncated Nano Pyramids
Photoluminescence and Raman Spectroscopy on truncated Nano Pyramids Physics of low Dimensions, FFF042 Josefin Voigt & Stefano Scaramuzza 10.12.2013, Lund University 1 Introduction In this project truncated
More information