#1 10P/DIL NORTH #3 #3 #3 #3 #3 #3 #3 #3 R198 RES0603 RES0603 DNP DNP DNP RES0603 RES0603 RES SDI_N 3-SDO_N 3-ALERT_N 3-CS_N 3-SCLK_N 3-CONV_N

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1 P REVISION REOR J SP RE N_JK P 90-00_-POS TP # - Remove these components to stack north # - Populate these components to stack north Use k Resistors or adjust as needed Header - Molex 90-0 PITORS, 0,, RE USE IN ESIGNS THT HVE HIGH NOISE LEVELS. USE pf - 00pF PS S NEEE NORTH - LERT - RY - FULT - ONV - ELL - ELL - SLK 8 - S 9 - SO 0 - SI 0 # # # # # # # # # R99 R00 R0 R0 R0 R0 R0 R0 # # # R98 R0 R08 R09 -ONV_N ONV_N -RY_N RY_N -LERT_N P0 80 0P/IL # NORTH LERT_N -FULT_N -VT VT FULT_N 9 -SLK_N SLK_N -SO_N SO_N -SI_N SI_N -S_N S_N UTION HIGH VOLTGE 0.00uf 0V INIVIUL GROUN PLNES RE NEESSRY FOR PROPER NOISE REJETION N STILITY OF THESE IRUITS NOTE: The ground reference per circuit block is unique The most negative connection of ELL0 is the ground reference for each chip. O NOT connect ground references from different chips TIE POINTS are to be shorted with a copper trace after routing Only the ground reference ELL0 of circuit is safe to connect non-isolated test equipment grounds. LTR EO NO: PPROVE: TE: ELL 8 + ELL + ELL + ELL + ELL + ELL + ELL - TP JP8 JP JP JP JP JP R K 0.% R K 0.% R K 0.% R K 0.% R9 K 0.% R K 0.% -ELL -ELL -ELL -ELL -ELL -ELL -ELL0 ELL ELL ELL ELL ELL ELL ELL0 QPL_IRUIT SHEET- LOTE R, R, R, R LOSE TO THE MOST NORTH I R8 R ONV_S RY_S LERT_S FULT_S SLK_S SO_S SI_S S_S uf 0V J SP RE N_JK P 90-00_-POS TP GROUN PLNE OF IRUIT GROUN PLNE OF IRUIT EXTEN THE GROUN PLNE UNER THE SOUTH OMM LINES TO JUST ELOW THE NORTH OMM PINS OF THE HIP ELOW R -VT -ONV_S -RY_S -LERT_S -FULT_S R R R K K K R0 K -ONV_N ONV_N -RY_N RY_N -LERT_N LERT_N -FULT_N FULT_N -SLK_S -SO_S -SI_S -S_S R K R R R K K K -SLK_N SLK_N -SO_N SO_N -SI_N SI_N -S_N S_N uf 0V ELL + ELL + ELL 0 + ELL 9 + ELL 8 + ELL + ELL - TP R0 R0 JP JP JP0 JP9 JP8 JP R9 K 0.% R K 0.% R9 K 0.% R K 0.% R K 0.% R09 K 0.% -ELL -ELL -ELL -ELL -ELL -ELL -ELL0 ELL ELL ELL ELL ELL ELL ELL0 ONV_S LOTE R0, R, R, R LOSE TO THE MOST SOUTH I QPL_IRUIT SHEET- LOTE R9, R9, R9, R9 LOSE TO THE MOST NORTH I RR_S LERT_S FULT_S SLK_S SO_S SI_S S_S ISO/OMMS VSIG FULT LERT RY ONV SHEET- P MT00-HEER-0PIN VSIG FULT LERT RY ONV GN MOSI 8 MISO 9 S 0 SLK J SP RE N_JK 0.00uf 0V GROUN PLNE OF IRUIT GROUN PLNE OF IRUIT R8 -ONV_S R8 K -ONV_N -RY_S -RY_N -LERT_S -LERT_N -FULT_S R9 R9 R9 K K K -FULT_N -SLK_S R8 K -SLK_N -SO_S R9 K -SO_N -SI_S R8 K -SI_N -S_S R8 K -S_N 0.00uf 0V -FULT -LERT -RY/TX -ONV/RX -SPI-MISO -SPI-MOSI -SPI-SLK -SPI-SS US-V I-SL I-S SPI-MISO SPI-SLK SPI-SS SPI-MOSI P 0P/IL SL GN S V MISO V 8 SLK MOSI 9 0 S GN SHUNT, EON, PHR U,LK MP part number# 88- istributor - igikey ELL + ELL + ELL + ELL + ELL + ELL + ELL _-POS TP TP JP JP JP JP JP JP R K 0.% R K 0.% R K 0.% R K 0.% R9 K 0.% R K 0.% -VT -ELL -ELL -ELL -ELL -ELL -ELL -ELL0 ELL ELL ELL ELL ELL ELL ELL0 ONV_N RY_N LERT_N FULT_N LOTE R8, R8, R8, R8 LOSE TO THE MOST SOUTH I SLK_N QPL_IRUIT SHEET- S0_N SI_N S_N GPIO FULT LERT RY ONV SPI-MISO SPI-MOSI SPI-SLK SPI-SS -GPIO -FULT -LERT -RY/TX -ONV/RX -SPI-MISO -SPI-MOSI -SPI-SLK -SPI-SS P 0P/IL V+ J PJ-0 ONN JK POWER.MM P FEET/Mounting holes X X X X FIUIL_MRK TP FIUIL_MRK TP J SP0 0 - LK N_JK LL RESISTERS % UNLESS NOTE rawing and circuit design subject to change without notice. opyright (c) 00 Texas Instruments, Inc. ll rights reserved. R9 R PITORS,, 0, RE USE IN ESIGNS THT HVE HIGH NOISE LEVELS. USE pf - 00pF PS S NEEE # - Populate these components to stack south Use k Resistors or adjust as needed Header - Molex 90-0 # - Remove these components to stack south UTION HIGH VOLTGE -ONV_S ONV_S -RY_S RY_S -LERT_S LERT_S # # # # # # # # # # # # R R R R8 R9 R0 R R R R R R -FULT_S P 9 # 0P/IL SOUTH FULT_S 80 -SLK_S SLK_S -SO_S S0_S -SI_S SI_S -S_S S_S 0 SOUTH - LERT - RY - FULT - ONV - VSS - VSS - SLK 8 - S 9 - SO 0 - SI SHEET RWN: GORON VRNEY HEKE: QULITY ONTROL: RELESE: /0/00 OMPNY: TITLE: FIUIL_MRK TP FIUIL_MRK TP Texas Instruments bqplevm- Stack esign Industrial Grade OE: SIZE: RWING NO: REV: HP0 SLE: 0//00 SHEET: OF

2 9 REVISION REOR -ONV_N [] -RY_N [] -LERT_N [] -FULT_N [] -SLK_N [] -SO_N [] -SI_N [] -S_N [] GROUN PLNE OF IRUIT GROUN PLNE OF IRUIT LTR EO NO: PPROVE: TE: R9 R PITORS,,, 0 RE USE IN ESIGNS THT HVE HIGH NOISE LEVELS. USE pf - 00pF PS S NEEE ** - Locate these components very close to U. UTION HIGH VOLTGE 0 R9 RESISTORS R9, R, N R9 RE USE TO INRESE THE URRENT LEVELS IN THE VERTILE OMMS LINES IN ESIGNS THT HVE HIGH NOISE LEVELS OR LONG LE LENGTHS IN THE VERTILE OMMS USE.0MEG RESISTORS WHEN NEEE. R ** P0 Z SO- -VT [] SLVE MOE - REMOVE R N R S - USE 00K RESISTOR IN R FOR SLVE MOE HOST MOE - REMOVE R N R H - USE RESISTOR IN R FOR HOST MOE ELL + ELL + ELL + ELL + ELL + ELL + ELL - [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL0 R8 RES 9 Z.V 00mW Q9 SO- R RES 0 Z9.V 00mW SO- Q8 R RES Z.V 00mW SO- Q Z.V 00mW Z0.V 00mW Z8.V 00mW R M % R M % R0 M % R8 ** R R8 ** R R ** R R ** T T V V V V 9 8 ONV_N RY_N LERT_N FULT_N SLK_N SO_N SI_N S_N U 0 TEST bqpltppq HSEL R S R H UX REG0 TS+ GPI- TS- TS+ GPI+ TS- N N N GPIO FULT_H LERT_H RY_H ONV_H -LO [] **.uf 0V P uf V J0- J- J- J uf V T R0.8K % R.8K % THERMISTOR NT 0K OHM % 00 PNSONI PRT NUMER # ERT-JVG0F T-, T-, pair on 0.00" spacing 9 R 0K % =K NT00 R.K % T- T- R R T R 0K % =K NT00 R.K % T- T- R8 00K R9 00 LTW-9TL White LE R.K Q N00K_ -GPIO [] -FULT [,] -LERT [,] -RY/TX [,] -ONV/RX [,] R RES Z.V 00mW SO- Q R RES 9 Z.V 00mW SO- Q Z.V 00mW Z.V 00mW R0 M % R0 M % ** 8 R R ** R R8 8 9 V 0 V V0 "ottom" part connects all _S pins to. ONV_S RY_S LERT_S FULT_S SLK_S SO_S SI_S S_S 8 9 VSS VSS VSS VSS VSS VSS 9 SO_H SI_H SLK_H S_H T VREF LO LO LO 0 8 ** 0uf 0V P0 ** 9 **.uf 0V P080 ** Locate these components very close to U. **.uf 0V P080 8 TP-VPROG TP-VSS -LO [] -LO -SPI-MISO [,] -SPI-MOSI [,] -SPI-SLK [,] -SPI-SS [,] R RES ** Z.V 00mW SO- Q R M % R Z.V 00mW R ** OMPNY: Texas Instruments []-ONV_S []-RY_S []-LERT_S []-FULT_S [] -SLK_S [] -SO_S [] -SI_S [] -S_S UTION HIGH VOLTGE RWN: GORON VRNEY /0/00 TITLE: bqplevm- Stack esign ommercial Grade HEKE: OE: SIZE: RWING NO: REV: LL RESISTERS % UNLESS NOTE rawing and circuit design subject to change without notice. opyright (c) 00 Texas Instruments, Inc. ll rights reserved. SHEET QULITY ONTROL: RELESE: SLE: IRUIT HP0 SHEET: OF

3 REVISION REOR LTR EO NO: PPROVE: TE: [] [] [] [] [] [] [] [] GROUN PLNE OF IRUIT -ONV_N -RY_N -LERT_N -FULT_N -SLK_N -SO_N -SI_N -S_N GROUN PLNE OF IRUIT ** - Locate these components very close to U. R 8 ** P0 Z SO- -VT [] UTION HIGH VOLTGE ELL + ELL + ELL + ELL + ELL + ELL + ELL - [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL0 R9 RES 88 Z.V 00mW SO- Q R RES 8 Z.V 00mW SO- Q R RES Z0.V 00mW SO- Q Z.V 00mW Z.V 00mW Z.V 00mW R ** R8 R M % R ** R R0 M % R ** R R0 M % R ** T T V V V V ONV_N RY_N LERT_N FULT_N SLK_N SO_N SI_N S_N TEST HSEL UX REG0 U bqpltppq -LO [] **.uf 0V P080 R 00K TS+ 0 TS- 0 TS+ 9 TS- 8 GPI+ GPI- N 0 N N GPIO 9 FULT_H 8 LERT_H RY_H ONV_H 8 0.0uf V J- J- J- J9-0.0uf V 80 T R.8K % R08.8K % THERMISTOR NT 0K OHM % 00 PNSONI PRT NUMER # ERT-JVG0F T-, T-,8 pair on 0.00" spacing 8 R 0K % =K NT00 R.K % T- T- T R8 R R8 0K % =K NT00 R0.K % T- T-8 R0 00K R0 00 LTW-9TL White LE R0.K Q N00K_ R RES Z8.V 00mW SO- Q Z9.V 00mW ** 0 R R M % R0 8 9 V 0 V SO_H SI_H 0 SLK_H S_H VREF LO LO 8 ** 0uf 0V P0 R -LO [] -LO 0 Z.V 00mW SO- R0 RES Q Z.V 00mW ** 9 R00 R99 M % R98 V0 ONV_S RY_S LERT_S FULT_S SLK_S SO_S 8 SI_S 9 S_S 9 VSS VSS VSS VSS VSS VSS T LO ** ** **.uf 0V.uf 0V P080 P080 ** Locate these components very close to U. TP-VPROG TP-VSS R9 RES 8 ** Z.V 00mW SO- Q0 Z.V 00mW R9 R9 M % R8 9 8 PITORS,, 8, 9 RE USE IN ESIGNS THT HVE HIGH NOISE LEVELS. USE pf - 00pF PS S NEEE ** GROUN PLNE OF IRUIT EXTEN THE GROUN PLNE UNER THE SOUTH OMM LINES [] -ONV_S [] -RY_S [] -LERT_S [] -FULT_S [] -SLK_S [] -SO_S [] -SI_S [] -S_S TO JUST ELOW THE NORTH OMM PINS OF THE HIP ELOW UTION HIGH VOLTGE OMPNY: Texas Instruments RWN: GORON VRNEY /0/00 TITLE: bqplevm- Stack esign ommercial Grade LL RESISTERS % UNLESS NOTE rawing and circuit design subject to change without notice. opyright (c) 00 Texas Instruments, Inc. ll rights reserved. SHEET HEKE: QULITY ONTROL: RELESE: OE: SIZE: RWING NO: REV: IRUIT HP0 SLE: SHEET: OF

4 0 REVISION REOR LTR EO NO: PPROVE: TE: -ONV_N [] -RY_N [] -LERT_N [] -FULT_N [] -SLK_N [] -SO_N [] -SI_N [] -S_N [] UTION HIGH VOLTGE ** - Locate these components very close to U. R90 -VT [] 9** P0 Z SO- R THERMISTOR NT 0K OHM % 00 PNSONI PRT NUMER # ERT-JVG0F ELL + ELL + ELL + ELL + ELL + ELL + ELL - [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL [] -ELL0 R0 RES Z8.V 00mW SO- Q R9 RES 8 Z.V 00mW SO- Q R8 RES 0 Z.V 00mW SO- Q Z9.V 00mW Z.V 00mW Z.V 00mW ** R9 R9 M % R9 ** R88 R8 M % R8 ** 08 R8 R8 M % R80 ** T T V V V V 9 8 ONV_N RY_N LERT_N FULT_N SLK_N SO_N SI_N S_N U 0 TEST bqpltppq [] -REG0 HSEL "Top" part connects all _N pins to ELL of U R9 00K UX -LO [] REG0 TS+ GPI- TS- TS+ GPI+ TS- N N N GPIO FULT_H LERT_H RY_H ONV_H **.uf 0V P uf V J0- J- J- J uf V T R89.8K % R.8K % T-9,0 T-, pair on 0.00" spacing R9 0K % =K NT00 R9.K % T-9 T-0 T R8 R8 R9 0K % =K NT00 R.K % T- T- R9 00K R0 00 LTW-9TL White LE R.K Q9 N00K_ 0 R8 RES Z.V 00mW SO- Q0 Z.V 00mW ** 0 R R M % R 8 9 V 0 V SO_H SI_H 0 SLK_H S_H VREF LO LO 8 98 ** 0uf 0V P0 R -LO -LO [] 9 Z9.V 00mW SO- R8 RES Q8 Z0.V 00mW ** 0 R R M % R V0 ONV_S RY_S LERT_S FULT_S SLK_S SO_S 8 SI_S 9 S_S VSS VSS VSS VSS VSS VSS 9 T LO 09 ** 0** 99 **.uf 0V.uf 0V P080 P080 ** Locate these components very close to U. 00** TP-VPROG TP-VSS R RES ** 0 R0 -REG0 [] 9 Z.V 00mW SO- Q Z8.V 00mW R0 R9 M % R ** PITORS 9, 9, 9, 9 RE USE IN ESIGNS THT HVE HIGH NOISE LEVELS. USE pf - 00pF PS S NEEE RESISTOR R0 IS USE TO INRESE THE URRENT LEVELS IN THE VERTILE OMMS LINES IN ESIGNS THT HVE HIGH NOISE LEVELS OR LONG LE LENGTHS IN THE VERTILE OMM PTHS. USE K RESISTOR WHEN NEEE UTION HIGH VOLTGE [] -ONV_S [] -RY_S [] -LERT_S [] -FULT_S [] -SLK_S [] -SO_S [] -SI_S [] -S_S GROUN PLNE OF IRUIT EXTEN THE GROUN PLNE UNER THE SOUTH OMM LINES TO JUST ELOW THE NORTH OMM PINS OF THE HIP ELOW RWN: GORON VRNEY /0/00 OMPNY: TITLE: Texas Instruments bqplevm- Stack esign ommercial Grade HEKE: OE: SIZE: RWING NO: REV: LL RESISTERS % UNLESS NOTE rawing and circuit design subject to change without notice. opyright (c) 00 Texas Instruments, Inc. ll rights reserved. SHEET QULITY ONTROL: RELESE: SLE: IRUIT HP0 SHEET: OF

5 R REVISION REOR LTR EO NO: PPROVE: TE: UTION HIGH VOLTGE ISOLTION OUNRY 8 MIL ISOLTION REQUIRE U ISO V- GN V- GN- URT or T FLGS VSIG [] IN OUT FULT [] IN IN OUT EN OUT OUT IN 0 EN LERT [] RY [] ONV [] 8 9 GN-8 GN-9 [,] -FULT [,] -LERT FULT LERT R80 00 R 00 R90.0M R89.0M R88.0M U R.0M R 00K [,] -RY/TX RY/TX R 00 SL S INPUT POR V RESET [,] -ONV/RX ONV/RX R I P P [,] -SPI-MISO [,] -SPI-MOSI [,] -SPI-SLK SPI - MISO SPI - MOSI SPI - SLK R 00 R0 00 R 00 U ISO V- V- R8 0K 0K R9 0K P P0 P I/O P P 0 8 GN P 9 P9PWR SPI / I I-S [] [,] -SPI-SS SPI - SS R 00 GN- OUT GN IN I-SL [] SPI-SS [] OUT OUT IN IN IN OUT SPI-MOSI [] SPI-SLK [] SPI-MISO [] 0 EN 9 GN-9 EN 8 GN-8 R8 R R REMOVE R8, R, R9 N POPULTE R8, R, R WHEN USING N EXTERNL MIROONTROLLER UTION: WHEN USING N EXTERNL MIROONTROLLR PULL UP RESITORS N PPLY VOLTGE TO THE MIRO WHEN THE MIRO IS POWERE OWN. R8 00 TP-IN TP-OUT V OUT R K % 0uF 0Vdc P080 R 9K % U8 TPS90VT OUT IN F GN EN 0.uf 0V L L0T00K 0uH 00m IN080.uf 0V TWS-TP 0V 00m TWS-TP 0V 00m T Q0-L 00uH 0.9R :. SM-.uf 0V Q N00K_ Q N00K_ 8.uf 0V U U808 U808-8 V OMP OUT F OUT S GN R MHZ OS R 0K JP9 =.V JP9 =.0V JP9 JUMPERSIP -.V - V U TPS9VT OUT IN F GN EN 0 0uF 0Vdc P080.0uf V R R0 JP0 = V / INT US JP0 = V / EXT PWR JP0 JUMPERSIP - INT US - EXT PWR US INPUT.-.V US-V V 00M V+ [] [] TP-VSS 0.00uF kv P808 R K 0pF TP- R9 R0 OMPNY: Texas Instruments LL RESISTERS % UNLESS NOTE RWN: GORON VRNEY /0/00 TITLE: bqplevm- Stack esign ommercial Grade rawing and circuit design subject to change without notice. opyright (c) 00 Texas Instruments, Inc. ll rights reserved. UTION HIGH VOLTGE SHEET HEKE: QULITY ONTROL: RELESE: OE: SIZE: RWING NO: REV: ISO/OMMS HP0 SLE: SHEET: OF

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17 Layer Stackup. esign: HP0 bqplevm- Stack esign.hyp, esigner: GordonV. Number of layers: 9 Total thickness =.8 mils NN Layer Name Plating Type Metal Usage Signal Thickness mils, oz Technology Metal opper Top Metal Signal opper Substrate ielectric Substrate Prepreg Inner_Layer_ Metal Signal opper.8 mils Substrate ielectric Substrate Prepreg Inner_Layer_ Metal Signal opper Substrate ielectric Substrate Prepreg 8 ottom Metal Signal opper 9 Plating Metal Signal opper

MUSIC. California Institute of Technology. HEMT Power Supply Precision Voltage Source. D. Miller 8/17/2011 REVISION RECORD LTR DATED: C31 5V_ID 10K

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