DC/DC Power Modules W
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1 PKV 3000 I PKV 5000 I DC/DC Power Modules W PKV 3000 I PKV 5000 I Wide input voltage range, 9 36V, 18 72V Hig efficiency 74 83% typical Low idling power Full output power up to +75 C ambient temperature Input/ isolation 1,500 Vdc MTBF > 650,000 ours at +25 C ambient Te PKV series of DC/DC power modules is intended for general use in 12/24V and 48/60V DC systems. Designed wit MOSFET transistors and 200 khz switcing frequency, tey are caracterized by ig efficiency over a wide load range, very low quiescent power and an excellent line and load regulation. Te DC/DC power modules are encapsulated in an epoxy filled plastic box. Te flammability ratings of te encapsulating materials are in conformance wit UL 94V-0 and ave an adequate termal conductivity. Te materials witstand all normal PBA cleaning metods. Ericsson Microelectronics AB as been an ISO 9001 certified supplier since For a complete product program please reference te back cover. E
2 General Absolute Maximum Ratings Power Derating Caracteristics min max Units T C Case temperature 1) C T S Storage temperature C V I Input voltage, 0.1 s max PKV 3000 PKV Vdc V ISO Isolation voltage (input to output test voltage) 1,500 Vdc Stress in excess of Absolute Maximum Ratings may cause permanent damage. Absolute Maximum Ratings, sometimes referred to as no destruction limits, are normally tested wit one parameter at a time exceeding te limits of data or Electrical Caracteristics. If exposed to stress above tese limits, function and performance may degrade in an unspecified manner. Input Caracteristics V Ioff T A = +25 C, unless oterwise specified Turn-off input voltage Conditions V I Input voltage range T A = 40 to +75 C PKV PKV PKV PKV Inrus current Peak Low loss, 35 I 2 t low inductive PKV capacitive source PKV Idling power = V I ac Ripple voltage = max, BW=20 MHz 100 min typ max Units V V A A 2 s A 2 s W mvp-p Tese DC/DC power modules operate witout any external components. However, in low noise applications it is recommended to use a filter. Please see EMC information included in tis data seet. It is recommended to protect te input source by fuses or oter protection devices. Fuses are noupplied internally. A slow fuse wit rating of 2 te I Imax is recommended. Input/ coupling capacitor RH = 48%, T C =+25 C f = 100 Hz 1000 pf Switcing frequency V I = V I nom, = max 200 khz Environmental Caracteristics Test metod Reference Test procedure & conditons Frequency Hz Vibration IEC F C Amplitude 0.75 mm (Sinusoidial) Accelaration 10 g Number of cycles 10 in eac axis Test duration 1 per axis Sock (Half-sinus) Temperature cange IEC E a IEC N a Peak acceleration 2000 m/s 2 Sock duration 3 ms Temperature 40 C to +125 C Number of cycles 100 Note: 1) Corresponding typical ambient temperature range (T A ) at full output power is 40 to + 75 C. 2 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
3 Mecanical Data Connections Pin Designation Single output Function Dual output In In NC/Rtn NC NC/ Out +Out NC Rtn +In +In Negative input Negative input Not connected Not connected Not connected Positive output Not connected return Positive input Positive input Negative input Negative input return Not connected Negative output Positive output Not connected return Positive input Positive input Weigt Maximum 15 g (0.53 oz). Case Non conductive plastic, UL 94V-0. EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
4 PKV 3110 PI T A =+25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max 300 ms +100 mv 100 mv T coeff Temperature coefficient Measured after stabilization ±0.02 %/ C = max, V I = 26 V 0.5 ms ms current 0.5 A 1.65 W A I sc Sort circuit current V I =26V 0.20 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1 Vp-p, ( = 20 log (1 Vp-p/p-p)) 60 db = max, V I = 26 V % = max, V I = 26 V W 4 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
5 PKV 3211 PI T A =+25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max 300 ms +100 mv 100 mv T coeff Temperature coefficient Measured after stabilization ±0.02 %/ C = max, V I = 26 V 0.5 ms ms current 0.5 A 2.5 W A I sc Sort circuit current V I =26V 0.25 A = max,t A = 25 C DC20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 26 V % = max, V I = 26 V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
6 PKV 3313 PI T A = +25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max 300 ms +150 mv 150 mv T coeff Temperature coefficient Measured after stabilization ± 0.02 %/ C = max, V I = 26 V 1.2 ms ms current 0.25 A 3 W A I sc Sort circuit current V I =26V 0.35 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 26 V % = max, V I = 26 V W 6 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
7 PKV 3315 PI T A = +25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max 300 ms +200 mv 200 mv T coeff Temperature coefficient Measured after stabilization ±0.02 %/ C = max, V I = 26 V 1.2 ms ms current 0.2 A 3 W A I sc Sort circuit current V I =26V 0.35 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1 Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 26 V % = max, V I = 26 V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
8 PKV 3222 PI T A =+25 C, V I = V unless oterwise specified. 1 2 Caracteristics Conditions Unit min typ max min typ max = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max ms mv mv T coeff Temperature coefficient Measured after stabilization ±0.02 ±0.02 %/ C = max, V I = 26 V ms ms current A W A I sc Sort circuit current V I =26 V A = max, T A = 25 C DC 20 MHz mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) db = max, V I = 26 V % = max, V I = 26 V W 8 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
9 PKV 3321 PI T A = +25 C, V I = V unless oterwise specified. 1 2 Caracteristics Conditions Unit min typ max min typ max = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max ms mv mv T coeff Temperature coefficient Measured after stabilization ±0.02 ±0.02 %/ C = max, V I = 26 V ms ms current A W A I sc Sort circuit current V I =26 V A = max, T A = 25 C DC 20 MHz mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) db = max, V I = 26 V % = max, V I = 26 V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
10 PKV 3325 PI T A = +25 C, V I = V unless oterwise specified. 1 2 Caracteristics Conditions Unit min typ max min typ max = max V = max mv = max, V I = 26 V mv = max, V I = 26 V load step = 0.5 max ms mv mv T coeff Temperature coefficient Measured after stabilization ±0.02 ±0.02 %/ C = max, V I = 26 V ms ms current A W A I sc Sort circuit current V I =26 V A = max, T A = 25 C DC 20 MHz mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) db = max, V I = 26 V % = max, V I = 26 V W 10 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
11 PKV 5110 PI T A = +25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 53V mv = max, V I = 53 V load step = 0.5 max 300 ms +100 mv 100 mv T coeff Temperature coefficient Measured after stabilization ±0.02 %/ C = max, V I = 53V 0.5 ms ms current 0.5 A 1.65 W A I sc Sort circuit current V I =53V 0.1 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 53V % = max, V I = 53V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
12 PKV 5211 PI T A = +25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 53V mv = max, V I = 53V load step = 0.5 max 300 ms +100 mv 100 mv T coeff Temperature coefficient Measured after stabilization ±0.02 %/ C = max, V I = 53V 0.5 ms ms current 0.5 A 2.5 W A I sc Sort circuit current V I =53V 0.12 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1 Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 53 V % = max, V I = 53V W 12 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
13 PKV 5313 PI T A = +25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 53 V mv = max, V I = 53V load step = 0.5 max 300 ms +150 mv 150 mv T coeff Temperature coefficient Measured after stabilization ± 0.02 %/ C = max, V I = 53V 1.2 ms ms current 0.25 A 3 W A I sc Sort circuit current V I =53V 0.17 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1 Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 53 V % = max, V I = 53V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
14 PKV 5315 PI T A = +25 C, V I = V unless oterwise specified. Caracteristics Conditions 1 min typ max Unit = max V = max mv = max, V I = 53V mv = max, V I = 53V load step = 0.5 max 300 ms +200 mv 200 mv T coeff Temperature coefficient Measured after stabilization ±0.02 %/ C = max, V I = 53V 1.2 ms ms current 0.2 A 3 W A I sc Sort circuit current V I =53V 0.17 A = max,t A = 25 C DC 20 MHz 60 mvp-p f = 100/120 Hz sine wave, 1 Vp-p, ( = 20 log (1 Vp-p/p-p )) 60 db = max, V I = 53 V % = max, V I = 53V W 14 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
15 PKV 5222 PI T A = +25 C, V I = V unless oterwise specified. 1 2 Caracteristics Conditions Unit min typ max min typ max = max V = max mv = max, V I = 53 V mv = max, V I = 53 V load step = 0.5 max ms mv mv T coeff Temperature coefficient Measured after stabilization ±0.02 ±0.02 %/ C = max, V I = 53 V ms ms current A W A I sc Sort circuit current V I =53 V A = max, T A = 25 C DC 20 MHz mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) db = max, V I = 53 V % = max, V I = 53 V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
16 PKV 5321 PI T A = +25 C, V I = V unless oterwise specified. 1 2 Caracteristics Conditions Unit min typ max min typ max = max V = max mv = max, V I = 53 V mv = max, V I = 53 V load step = 0.5 max ms mv mv T coeff Temperature coefficient Measured after stabilization ±0.02 ±0.02 %/ C = max, V I = 53 V ms ms current A W A I sc Sort circuit current V I =53 V A = max, T A = 25 C DC 20 MHz mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) db = max, V I = 53 V % = max, V I = 53 V W 16 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
17 PKV 5325 PI T A = +25 C, V I = V unless oterwise specified. 1 2 Caracteristics Conditions Unit min typ max min typ max = max V = max mv = max, V I = 53 V mv = max, V I = 53 V load step = 0.5 max ms mv mv T coeff Temperature coefficient Measured after stabilization ±0.02 ±0.02 %/ C = max, V I = 53 V ms ms current A W A I sc Sort circuit current V I =53 V A = max, T A = 25 C DC 20 MHz mvp-p f = 100/120 Hz sine wave, 1Vp-p, ( = 20 log (1 Vp-p/p-p )) db = max, V I = 53 V % = max, V I = 53 V W EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June
18 EMC Specifications Te PKV DC/DC power module is mounted on a double sided printed circuit board (PB) wit groundplane during EMC measurements. Te fundamental switcing frequency is approx. 200 khz. Te PKV series as a good input filter and will only need a simple filter to meet conducted noise according to EN level B. Fig. 1 sows an example of filter and te results for tis filter is sown below. Fig. 1 Conducted noise PKV 3211 witout filter PKV 3211 wit filter PKV 5211 witout filter PKV 5211 wit filter 18 EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000
19 Limitation of liability Ericsson Microelectronics does not make any oter warranties, expressed or implied including any warranty of mercantability or fitness for a particular purpose (including, but not limited to, use in life support applications, were malfunctions of product can cause injury to a person s ealt or life). Teset up Quality Reliability According to MIL-HDBK-217F te calculated MTBF value at 100% load (from PKV 5211 PI) at te following ambient temperatures will be approx.: T amb Hours 0 C 2.7 million 10 C 1.5 million 25 C C C C At % load te case temperature will be approx C iger tan te ambient temperature. Quality Statement Te products are designed and manufactured in an industrial environment were quality systems and metods like ISO 9000 and SPC are intensively in use to boost te continuous improvements strategy. Infant mortality or early failures in te products are screened out by a burn-in procedure. Warranty Ericsson Microelectronics warrants to te original purcaser or end user tat te product conform to tis Data Seet and are free from material and workmansip defects for a period of five (5) years from te date of manufacture, if te product is used witin specified conditions and not opened. In case te product is discontinued, claims will be accepted up to tree (3) years from te date of te discontinuation. For additional details on tis limited warranty we refer to Ericsson Microelectronics AB s General Terms and Conditions of Sales, or individual contract documents. EN/LZT R1A (Replaces EN/LZT R2) Ericsson Microelectronics AB, June 2000 Information given in tis data seet is believed to be accurate and reliable. No responsibility is assumed for te consequences of its use nor for any infringement of patents or oter rigts of tird parties wic may result from its use. No license is granted by implication or oterwise under any patent or patenigts of Ericsson Microelectronics. Tese products are sold only according to Ericsson Microelectronics general conditions of sale, unless oterwise confirmed in writing. Specifications subject to cange witout notice. 19
20 Product Program V I / max Ordering No. 12/24 V 48/60 V 3.3 V/500 ma 1.65 W PKV 3110 PI 5 V/500 ma 2.50 W PKV 3211 PI 12 V/250 ma 3.00 W PKV 3313 PI 15 V/200 ma 3.00 W PKV 3315 PI ± 5V/250 ma 2.50 W PKV 3222 PI ±12V/125 ma 3.00 W PKV 3321 PI ±15V/100 ma 3.00 W PKV 3325 PI 3.3 V/500 ma 1.65 W PKV 5110 PI 5 V/500 ma 2.50 W PKV 5211 PI 12 V/250 ma 3.00 W PKV 5313 PI 15 V/200 ma 3.00 W PKV 5315 PI ± 5 V/250 ma 2.50 W PKV 5222 PI ±12 V/125 ma 3.00 W PKV 5321 PI ±15 V/100 ma 3.00 W PKV 5325 PI Ericsson Microelectronics AB SE KISTA, Sweden Pone: For local sales contacts, please refer to our website or call: Int , Fax: Te latest and most complete information can be found on our website! Data Seet EN/LZT R1A (Replaces EN/LZT R1A) Ericsson Microelectronics AB, June 2000
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching. PINNING
DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17
DISCRETE SEMICONDUCTORS DATA SHEET age M3D6 Supersedes data of 997 Jun 7 2 Dec FEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS
NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.
Rev. 01 3 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input OR function. Symmetrical output impedance
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
8-channel analog multiplexer/demultiplexer. For operation as a digital multiplexer/demultiplexer, V EE is connected to V SS (typically ground).
Rev. 04 12 January 2005 Product data sheet 1. General description 2. Features The is an with three address inputs (0 to 2), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and
Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000
IX23-IX2-IX25 3-mpere Dual Low-Side Ultrafast MOSFET Drivers Features 3 Peak Output Current Wide Operating Voltage Range:.5V to 35V - C to +25 C Operating Temperature Range Latch-up Protected to 3 Fast
The 74HC21 provide the 4-input AND function.
Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL).
2-input EXCLUSIVE-OR gate
Rev. 01 7 September 2009 Product data sheet 1. General description 2. Features 3. Ordering information is a high-speed Si-gate CMOS device. It provides a 2-input EXCLUSIVE-OR function. Symmetrical output
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted
Recommended Land Pattern: [mm]
![Recommended Land Pattern: [mm]](/thumbs/77/75770770.jpg "Recommended Land Pattern: [mm]")
Dimensions: [mm] 5 ±0,5 Recommended Land Pattern: [mm] 5 O 1,2 Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 khz/ 250 mv L 33 µh ±10 Rated Current ΔT = 40 K I R 2.55 A
DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Mar 27 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification.
CPC3730CTR. 350V N-Channel Depletion-Mode FET (SOT-89) INTEGRATED CIRCUITS DIVISION
V (BR)DSX / V (BR)DGX R DS(on) (max) I DSS (min) Package 35V P 3 14mA SOT-89 Features Low R DS(on) at Cold Temperatures R DS(on) 3 max. at 25ºC High Input Impedance High Breakdown Voltage: 35V P Low (off)
DATA SHEET. BAS40 series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 28.
DISCRETE SEMICONDUCTORS DT SHEET age MD088 MD07 BS40 series Supersedes data of 999 pr 8 00 Oct 0 BS40 series FETURES Low forward voltage Guard ring protected Small plastic SMD packages Low diode capacitance.
XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger
Rev. 01 31 ugust 2009 Product data sheet 1. General description 2. Features 3. pplications is a high-speed Si-gate CMOS device. It provides an inverting buffer function with Schmitt trigger action. This
PHP7NQ60E; PHX7NQ60E
Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very
DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2001 Jun 11 2004 Jan 13 FETURES High current (max. 1 ) Low collector-emitter saturation voltage ensures reduced power consumption. PPLICTIONS Battery
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
Recommended Hole Pattern: [mm]
![Recommended Hole Pattern: [mm]](/thumbs/77/74984900.jpg "Recommended Hole Pattern: [mm]")
Dimensions: [mm] Recommended Hole Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 680 nf ±10% Rated Voltage U R 400 V (DC) Insulation
DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at
PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold
DATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jun 23 22 Feb 19 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R DSon. APPLICATIONS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter
Rev. 5 1 July 27 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. It provides an inverting single stage function. The standard output
2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.
74HC1G09 Rev. 02 18 December 2007 Product data sheet 1. General description 2. Features 3. Ordering information The 74HC1G09 is a high-speed Si-gate CMOS device. The 74HC1G09 provides the 2-input ND function
PSMN002-25P; PSMN002-25B
PSMN2-25P; PSMN2-25B Rev. 1 22 October 21 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PSMN2-25P
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC7 1995 Apr 25 Philips Semiconductors FEATURES High forward transfer admittance Short channel transistor with high forward transfer
74LV373 Octal D-type transparent latch (3-State)
INTEGRATED CIRCUITS 74V373 Supersedes data of 1997 March 04 IC24 Data andbook 1998 Jun 10 74V373 FEATURES Wide operating voltage: 1.0 to 5.5V Optimized for ow Voltage applications: 1.0V to 3.6V Accepts
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
INTEGRATED CIRCUITS. 74F521 8-bit identity comparator. Product specification May 15. IC15 Data Handbook
INTEGRATED CIRCUITS 1990 May IC Data Handbook FEATURES Compares two 8-bit words in 6.5ns typical Expandable to any word length DESCRIPTION The is an expandable 8-bit comparator. It compares two words of
INTEGRATED CIRCUITS. PCK2002P 533 MHz PCI-X clock buffer. Product data Supersedes data of 2001 May Dec 13. Philips Semiconductors
INTEGRATED CIRCUITS Supersedes data of 2001 May 09 2002 Dec 13 Philips Semiconductors FEATURES General purpose and PCI-X 1:4 clock buffer 8-pin TSSOP package See PCK2001 for 48-pin 1:18 buffer part See
PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.
Rev. 2 8 June 26 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2
74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers.
Rev. 01 6 October 2006 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. The provides two buffers. Wide supply voltage range from 2.0
Recommended Land Pattern: [mm]
![Recommended Land Pattern: [mm]](/thumbs/84/89483599.jpg "Recommended Land Pattern: [mm]")
Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 150 nf ±10% Rated Voltage U R 310 V (AC) max. Rated
DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02.
Rev. 04 11 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G02 and 74HCT1G02 are high speed Si-gate CMOS devices. They provide a 2-input NOR function. The HC
BF545A; BF545B; BF545C
Rev. 3 5 August 24 Product data sheet. Product profile. General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic
PSMN004-60P/60B. PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2 -PAK).
Rev. 1 26 April 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN4-6P in SOT78 (TO-22AB) PSMN4-6B
Aluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
SMD version of BUK125-50L
DESCRIPTION QUICK REFERENCE DATA Monolithic logic level protected SYMBOL PARAMETER MAX. UNIT power MOSFET using TOPFET2 technology assembled in a 5 pin surface mounting plastic package. V DS I D Continuous
74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86.
Rev. 04 20 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G86 and 74HCT1G86 are high-speed Si-gate CMOS devices. They provide a 2-input EXCLUSIVE-OR function.
PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
Distributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. LBA11 Dual Pole OptoMOS Relay Parameter Ratings Units Blocking Voltage 3 V
PHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
Rev. 1 12 May 24 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level
SFH615A/SFH6156. Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS. Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 300 V RMS Features Excellent CTR Linearity Depending on Forward Current Isolation Test Voltage, 300 V RMS e3 Fast Switching Times Low CTR Degradation
NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
SI Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low
PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.
Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
N-channel TrenchMOS logic level FET
M3D315 Rev. 3 23 January 24 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features Low on-state resistance Fast switching
PHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK).
PHP/PHD355E Rev. 6 25 March 22 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP355E in SOT78
74HC General description. 2. Features. 3-to-8 line decoder, demultiplexer with address latches; inverting
3-to-8 line decoder, demultiplexer with address latches; inverting Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible
SN54HC20, SN74HC20 DUAL 4-INPUT POSITIVE-NAND GATES
SNHC0, SN7HC0 DUAL -INPUT POSITIVE-NAND GATES SCLS0C DECEMBER REVISED MAY 7 Package Options Include Plastic Small-Outline (D) and Ceramic Flat (W) Packages, Ceramic Chip Carriers (FK), and Standard Plastic
2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET PDT114E series Supersedes data of 1999 May 21 200 pr 10 PDT114E series FETURES uilt-in bias resistors Simplified circuit design Reduction of component count Reduced pick
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM117/217 LM317 1.2V TO 37V VOLTAGE REGULATOR OUTPUT VOLTAGE RANGE: 1.2
WCAP-FTXX Film Capacitors
A Dimensions: [mm] B Recommended hole pattern: [mm] D1 Electrical Properties: Properties Test conditions Value Unit Tol. Capacitance 1 V/ 1 khz ± 0.2 khz C 0.1000 µf ± 10% Rated voltage U R 310 V (AC)
TrenchMOS ultra low level FET
M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.