3SK318. Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier. ADE (Z) 1st. Edition Feb Features. Outline

Transcription

1 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE (Z) st. Edition Feb. 998 Features Low noise characteristics; (NF=. db typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= V Outline CMPAK- Note: Marking is YB.. Source. Gate. Gate. Drain

2 Absolute Maximum Ratings (Ta = C) Item Symbol Ratings Unit Drain to source voltage V DS 6 V Gate to source voltage V GS ±6 V Gate to source voltage V GS ±6 V Drain current I D 0 ma Channel power dissipation Pch 00 mw Channel temperature Tch 0 C Storage temperature Tstg to +0 C Electrical Characteristics (Ta = C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 6 V I D = 00µA, V GS = V GS = 0 Gate to source breakdown voltage Gate to source breakdown voltage V (BR)GSS ±6 V I G = ±0µA, V GS = V DS = 0 V (BR)GSS ±6 V I G = ±0µA, V GS = V DS = 0 Gate to source cutoff current I GSS ±00 na V GS = ±V, V GS = V DS = 0 Gate to source cutoff current I GSS ±00 na V GS = ±V, V GS = V DS = 0 Gate to source cutoff voltage V GS(off) V V DS = V, V GS = V I D = 00µA Gate to source cutoff voltage V GS(off) V V DS = V, V GS = V I D = 00µA Drain current I DS(op) 0. 0 ma V DS =.V, V GS =.V V GS = V Forward transfer admittance y fs 8 ms V DS =.V, V GS = V I D = 0mA, f = khz Input capacitance C iss..6.9 pf V DS =.V, V GS = V Output capacitance C oss pf I D = 0mA, f= MHz Reverse transfer capacitance C rss pf Power gain PG 8 db V DS =.V, V GS = V Noise figure NF.. db I D = 0mA, f = 900MHz

3 Channel Power Dissipation Pch (mw) Maximum Channel Power Dissipation Curve Ambient Temperature Ta ( C) Drain Current I D (ma) Typical Output Characteristics V GS =.7 V.6 V. V. V. V. V. V.0 V V GS = V 0.9 V 0.8 V Drain to Source Voltage V DS (V) Drain Current I D (ma) Drain Current vs. Gate to Source Voltage V DS =. V. V. V V GS =.0 V.0 V Drain Current I D (ma) Drain Current vs. Gate to Source Voltage V DS =. V.0 V. V. V.8 V.6 V V GS =.0 V 0 0 Gate to Source Voltage V (V) GS Gate to Source Voltage V (V) GS

4 Forward Transfer Admittance y fs (ms) Forward Transfer Admittance vs. Gate Voltage V DS =. V V V GS = V. V. V V Gate to Source Voltage V (V) GS Power Gain PG (db) 0 0 Power Gain vs. Drain Current V DS =. V V GS = V f = 900 MHz Drain Current I D (ma) Noise Figure NF (db) Noise Figure vs. Drain Current V DS =. V V GS = V f = 900 MHz Power Gain PG (db) Power Gain vs. Drain to Source Voltage 0 0 V = V GS I D = 0 ma f = 900 MHz Drain Current I D (ma) Drain to Source Voltage V DS (V)

5 Noise Figure NF (db) Noise Figure vs. Drain to Source Voltage V GS = V I D = 0 ma f = 900 MHz Power Gain PG (db) 0 0 Power Gain vs. Gate to Source Voltage V DS =. V f = 900MHz Drain to Source Voltage V (V) DS Gate to Source Voltage V GS (V) Noise Figure NF (db) Noise Figure vs. Gate to Source Voltage V DS =. V f = 900MHz 0 Gate to Source Voltage V GS (V)

6 .. S Parameter vs. Frequency S Parameter vs. Frequency 90 Scale: / div Test Condition : V DS=. V, V GS = V I D = 0mA 0 to 000 MHz (0 MHz step) Test Condition : V DS=. V, V GS = V I D = 0mA 0 to 000 MHz (0 MHz step) 0 S Parameter vs. Frequency 90 Scale: 0.00 / div S Parameter vs. Frequency Test Condition : V DS=. V, V GS = V I D= 0mA 0 to 000 MHz (0 MHz step) Test Condition : V DS=. V, V GS = V I D = 0mA 0 to 000 MHz (0 MHz step) 6

7 Sparameter (V DS =.V, V GS = V, I D = 0mA, Zo = 0Ω) S S S S f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG

8 Package Dimensions As of January, 00 Unit: mm ± 0.. ± ± 0.. ± ± ± Hitachi Code JEDEC EIAJ Mass (reference value) CMPAK-(T) Conforms g 8

9 Cautions. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo , Japan Tel: Tokyo (0) 70- Fax: (0) URL NorthAmerica : Europe : Asia : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 79 East Tasman Drive, San Jose,CA 9 Tel: <> (08) -990 Fax: <>(08) -0 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe D-86 Feldkirchen, Munich Germany Tel: <9> (89) Fax: <9> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <> (68) 8000 Fax: <> (68) 860 Hitachi Asia Ltd. Hitachi Tower 6 Collyer Quay #0-00, Singapore 098 Tel : <6>-8-6/8-877 Fax : <6>-8-69/8-877 URL : Hitachi Asia Ltd. (Taipei Branch Office) /F, No. 67, Tun Hwa North Road, Hung-Kuo Building, Taipei (0), Taiwan Tel : <886>-() Fax : <886>-() Telex : HAS-TP URL : Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <8>-()-7-98 Fax : <8>-() URL : Copyright Hitachi, Ltd., 000. All rights reserved. Printed in Japan. Colophon.0 9

10 This datasheet has been download from: Datasheets for electronics components.