2SJ174. Silicon P-Channel MOS FET

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1 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-22AB D G 1. Gate 2. Drain (Flange) 3. Source S

2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ±2 V Drain current I D 2 A Drain peak current I D(pulse) * 1 8 A Body to drain diode reverse drain current I DR 2 A Channel dissipation Pch* 2 75 W Channel temperature Tch 15 C Storage temperature Tstg 55 to +15 C Notes 1. PW 1 µs, duty cycle 1% 2. Value at T C = 25 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = 1 ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ±2 V I G = ±1 µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS 25 µa V DS = 5 V, V GS = Gate to source cutoff voltage V GS(off) V I D = 1 ma, V DS = 1 V Static drain to source on state R DS(on) Ω I D = 1 A, V GS = 1 V* 1 resistance.9.13 I D = 1 A, V GS = 4 V* 1 Forward transfer admittance y fs 8 13 S I D = 1 A, V DS = 1 V* 1 Input capacitance Ciss 185 pf V DS = 1 V, V GS =, Output capacitance Coss 99 pf f = 1 MHz Reverse transfer capacitance Crss 265 pf Turn-on delay time t d(on) 15 ns I D = 1 A, V GS = 1 V, Rise time t r 125 ns R L = 3 Ω Turn-off delay time t d(off) 345 ns Fall time t f 235 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test V DF 1.2 V I F = 2 A, V GS = t rr 23 ns I F = 2 A, V GS =, di F /dt = 5 A/µs 2

3 Channel Dissipation Pch (W) Power vs. Temperature Derating Maximum Safe Operation Area Ta = 25 C 1 ms 1 µs 1 µs PW = 1 ms (1 shot) DC Operation (T C = 25 C) Operation in this area is limited by R DS (on) Case Temperature T C ( C) Typical Output Characteristics 6 V 5 V 2 Typical Transfer Characteristics V 8 V 4 V 3 V V DS = 1 V 75 C T C = 25 C 25 C V GS = 2 V Drain to Source Voltage V GS (V) Drain to Source Saturation Voltage V DS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage I D = 2 A 1 A 5 A Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current V GS = 4 V 1 V

4 Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature V GS = 4 V V GS = 1 V I D = 2 A 1 A 5 A 2 A 1 A 5 A Case Temperature T C ( C) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current V DS = 1 V 25 C T C = 25 C 75 C Reverse Recovery Time t rr (ns) 1, Body to Drain Diode Reverse Recovery Time di/dt = 5 A/s, Ta = 25 C V GS = Capacitance C (pf) 1, 1, 1 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss V GS = f = 1 MHz Reverse Drain Current I DR (A) V DS Dynamic Input Characteristics 25 V V DD = 1 V V DD = 5 V 5 V 25 V 1 V V GS I D = 2 A Gate to Source Voltage V GS (V) Switching Time t (ns) Switching Characteristics t f t r t d (on) t d (off) V GS = 1 V, V DD =.. 3V PW = 2 µs, duty < 1% Gate Charge Qg (nc)

5 2 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) V 5 V V GS =,5 V Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) µ D = Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width T C = 25 C θch c (t) = γ S (t) θch c θch c = 1.67 C/W, T C = 25 C P DM T PW 1 µ 1 m 1 m 1 m 1 1 Pulse Width PW (s) D = PW T Switching Time Test Circuit Waveforms Vin Monitor Vin 1% D.U.T. R L Vout Monitor 9% 9% 9% Vin 1 V 5 Ω V DD =.. 3 V Vout t d (on) 1% t r t d (off) 1% t f 5

6 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 1, Japan Tel: Tokyo (3) Fax: (3) For further information write to: Hitachi America, Ltd. Hitachi Europe GmbH Semiconductor & IC Div. Electronic Components Group 2 Sierra Point Parkway Continental Europe Brisbane, CA Dornacher Straße 3 U S A D Feldkirchen Tel: München Fax: Tel: Fax: Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: Fax: Hitachi Asia Pte. Ltd. 16 Collyer Quay #2- Hitachi Tower Singapore 14 Tel: Fax: Hitachi Asia (Hong Kong) Ltd. Unit 76, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: Fax:

2SJ172. Silicon P-Channel MOS FET

2SJ172. Silicon P-Channel MOS FET Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable