2SK1169, 2SK1170. Silicon N-Channel MOS FET. Application. Features. Outline. High speed power switching
|
|
- Crystal Ryan
- 5 years ago
- Views:
Transcription
1 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 3 S 1. Gate. Drain (Flange) 3. Source
2 Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to source voltage SK1169 V DSS V SK Gate to source voltage V GSS ±30 V Drain current I D A Drain peak current I D(pulse) * 1 80 A Body to drain diode reverse drain current I DR A Channel dissipation Pch* 1 W Channel temperature Tch 1 C Storage temperature Tstg 55 to +1 C Notes: 1. PW µs, duty cycle 1%. Value at T C = 5 C
3 Electrical Characteristics (Ta = 5 C) Item Symbol Min Typ Max Unit Test conditions Drain to source SK1169 V (BR)DSS V I D = ma, V GS = 0 breakdown voltage SK Gate to source breakdown voltage V (BR)GSS ±30 V I G = ±0 µa, V DS = 0 Gate to source leak current I GSS ± µa V GS = ±5 V, V DS = 0 Zero gate voltage SK1169 I DSS µa V DS = 360 V, V GS = 0 drain current SK1170 V DS = 00 V, V GS = 0 Gate to source cutoff voltage V GS(off) V I D = 1 ma, V DS = V Static Drain to source SK1169 R DS(on) Ω I D = A, V GS = V * 1 on state resistance SK Forward transfer admittance yfs 16 S I D = A, V DS = V * 1 Input capacitance Ciss 800 pf V DS = V, V GS = 0, Output capacitance Coss 780 pf f = 1 MHz Reverse transfer capacitance Crss 90 pf Turn-on delay time t d(on) 3 ns I D = A, V GS = V, Rise time t r 115 ns R L = 3 Ω Turn-off delay time t d(off) 0 ns Fall time t f 90 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test V DF V I F = A, V GS = 0 t rr 0 ns I F = A, V GS = 0, di F /dt = 0 A/µs 3
4 1 Power vs. Temperature Derating 0 Maximum Safe Operation Area Channel Dissipation Pch (W) Case Temperature T C ( C) µs PW = ms (1Shot) 1 ms DC Operation (T C = 5 C) µs Operation in this area is limited by R DS (on) 0.3 Ta = 5 C SK1170 SK ,000 Drain to Source Voltage V DS (V) 0 Typical Output Characteristics V 7 V 6 V 16 Typical Transfer Characteristics V DS = V 30 5 V V GS = V C 5 C T C = 5 C Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)
5 Drain to Source Saturation Voltage V DS (on) (V) 8 6 Drain to Source Saturation Voltage vs. Gate to Source Voltage A A I D = 5 A Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current V GS = V 15 V Static Drain to Source on State Resistance R DS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature V GS = V I D = A A 5 A Case Temperature T C ( C) Forward Transfer Admittance yfs (S) 5 Forward Transfer Admittance vs. Drain Current V DS = V 5 C T C = 5 C 75 C
6 Reverse Recovery Time t rr (ns) 5,000,000 1, Body to Drain Diode Reverse Recovery Time di/dt = 0 A/µs, Ta = 5 C V GS = 0 Capacitance C (pf),000 1,000 0 Typical Capacitance vs. Drain to Source Voltage V GS = 0 f = 1 MHz Ciss Coss Crss Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS V DD = 0 V V 00 V V GS 0 I V DD = 00 V D = A V 0 V Gate Charge Qg (nc) Gate to Source Voltage V GS (V) Switching Time t (ns) t f t r Switching Characteristics t d (off) t d (on) V GS = V V DD = 30 V PW = µs, duty < 1%
7 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) V, V V GS = 0, V Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) D = Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width θch c (t) = γ S (t) θch c θch c = C/W,T C = 5 C µ 0 µ 1 m m 0 m 1 Pulse Width PW (s) P DM PW T T C = 5 C D = PW T Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T R L Vin % Wavewforms 90 % Vin = V Ω. V DD = 30 V. Vout % 90 % td (on) tr 90 % td (off) % tf 7
8 15.6 ± 0.3 φ3. ± ± ± Unit: mm Max ± ± ± ± ± ± ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g
9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi s or any third party s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party s rights, including intellectual property rights, in connection with use of the information contained in this document.. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo 0-000, Japan Tel: Tokyo (03) Fax: (03) URL NorthAmerica : Europe : Asia (Singapore) : Asia (Taiwan) : Asia (HongKong) : Japan : For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 9513 Tel: <1> (08) Fax: <1>(08) Hitachi Europe GmbH Electronic components Group Dornacher Stra e 3 D-856 Feldkirchen, Munich Germany Tel: <9> (89) Fax: <9> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <> (168) 5800 Fax: <> (168) 7783 Hitachi Asia Pte. Ltd. 16 Collyer Quay #-00 Hitachi Tower Singapore Tel: 535- Fax: Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (5) Tel: <886> () Fax: <886> () Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <85> () Fax: <85> () Telex: 0815 HITEC HX Copyright ' Hitachi, Ltd., All rights reserved. Printed in Japan.
2SK1254(L), 2SK1254(S)
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching V gate drive device Can be driven from V source Suitable for motor drive, DC-DC converter,
More information3SK318. Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier. ADE (Z) 1st. Edition Feb Features. Outline
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-08-600 (Z) st. Edition Feb. 998 Features Low noise characteristics; (NF=. db typ. at f= 900 MHz) Excellent cross modulation characteristics Capable
More information2SJ172. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
More information2SJ174. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable
More informationHD74HC4511. BCD-to-Seven Segment Latch/Decoder/Driver. Description. Features
HD74HC4511 BCD-to-Seven Segment Latch/Decoder/Driver Description The HD74HC4511 provides the functions of a 4-bit storage latch, a BCD-to-seven-segment decoder, and an output driver. Lamp test (LT), blanking
More informationHD74HC42. BCD-to-Decimal Decoder. ADE (Z) 1st. Edition Sep Description. Features
BCD-to-Decimal Decoder ADE-205-418 (Z) 1st. Edition Sep. 2000 Description Data on the four input pins select one of the 10 outputs corresponding to the value of the BCD number on the inputs. An output
More informationHD74AC166/HD74ACT166
HD74AC166/HD74ACT166 8-bit Shift Register Description The HD74AC166/HD74ACT166 is an 8-bit, serial or parallel-in, serial-out shift register using edge triggered D-type flip-flops. Serial and parallel
More information2SJ182(L), 2SJ182(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
More information2SJ332(L), 2SJ332(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable
More information2SJ280(L), 2SJ280(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable
More informationHD74HC160/HD74HC161/ HD74HC162/HD74HC163
HD74H160/HD74H161/ HD74H162/HD74H163 Synchronous Decade ounter (Direct lear) Synchronous 4-bit Binary ounter (Direct lear) Synchronous Decade ounter (Synchronous lear) Synchronous 4-bit Binary ounter (Synchronous
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm V gate drive Low drain-source ON resistance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.7Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767
SK77 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK77 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =. Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) SK Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 7 mω (typ.) High forward
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj
SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU
SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package
More informationHN27C4096AHG/AHCC Series
262,144-word 16-bit CMOS UV Erasable and Programmable ROM ADE-203-247A(Z) Rev. 1.0 Apr. 4, 1997 Description HN27C4096AHG/AHCC is a 4-Mbit ultraviolet erasable and electrically programmable ROM, featuring
More informationµtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.
M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200
High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSMJ6TE Small package Low on-resistance : R on = 8 Ω (max) (@V GS = 4 V) : R on =
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. (typ.) High forward transfer admittance: Y fs
More informationTOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON-resistance: R DS (ON)
More informationTOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7BFU High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : R DS(ON) =. Ω (max) (@V GS =.
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T
TKJT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TKJT Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385 2SK2385 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON resistance
More informationTPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)
TPCF84 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF84 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200
SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications.±. Unit: mm Compact package suitable for high-density mounting Low
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 0.74 Ω (typ.)
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:
More informationN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
More informationPMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE
SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : R on =. Ω (max) (@V GS
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF82 TPCF82 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mω (typ.)
More informationPSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET
Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High
More informationPMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.
More informationN-channel TrenchMOS logic level FET
Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationPHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small
More informationIRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor
M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7FU High Speed Switching Applications Analog Switch Applications Unit: mm.v drive Low ON-resistance R DS(ON) =.6 Ω (max) (@V GS =. V) R DS(ON)
More informationTPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
More informationTrenchMOS ultra low level FET
M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationN-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)
M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low
More informationN-channel TrenchMOS logic level FET
M3D315 Rev. 3 23 January 24 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features Low on-state resistance Fast switching
More informationTPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)
查询 TPCS89 供应商 TPCS89 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS89 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm Small footprint
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H
TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationN-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance
Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationN-channel TrenchMOS standard level FET
Rev. 2 27 November 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationTOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE
SSM6L3FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L3FE High-Speed Switching Applications Analog Switch Applications.6±. Unit: mm N-ch:.2-V drive.2±. P-ch:.2-V drive N-ch, P-ch,
More informationPMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET
M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.
More informationPMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.
Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026
TPC26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC26 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due
More informationPHM21NQ15T. TrenchMOS standard level FET
M3D879 Rev. 2 11 September 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8)
More informationTOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel
TPC85 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications (P Channel U MOS IV/N Channel U-MOS
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small
More informationBUK A. N-channel TrenchMOS standard level FET
Rev. 2 31 July 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationTOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSMJ7TU High-Speed Switching Applications 4 V drive Low ON-resistance: R on = 225 mω (max) (@V GS = ) R on = 7 mω (max) (@V GS = V) Absolute Maximum
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V
More informationPHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
Rev. 1 12 May 24 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) High Power Amplifier Application Unit: mm High breakdown voltage: V DSS = 8 V Complementary to SJ68.. MAX. 5.9 MAX. Ф. ±... 9..5. ±..
More informationTPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source
More informationPSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses
Rev. 2 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide
More informationPSMN4R3-30PL. N-channel 30 V 4.3 mω logic level MOSFET. High efficiency due to low switching and conduction losses
Rev. 1 16 June 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide
More informationN-channel TrenchMOS standard level FET. High noise immunity due to high gate threshold voltage
Rev. 2 12 March 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationPHP7NQ60E; PHX7NQ60E
Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationBSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationN-channel TrenchMOS logic level FET
Rev. 1 22 April 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
More informationBUK B. N-channel TrenchMOS logic level FET
Rev. 2 6 May 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
More informationPHP110NQ08T. N-channel TrenchMOS standard level FET
Rev. 2 12 October 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationN-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance
Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 1 V R DS(on),max 12 Ω I DSS,min.9 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC7-H TPC7-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small
More informationOptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
More informationPHB108NQ03LT. N-channel TrenchMOS logic level FET
Rev. 4 2 February 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK6A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:
More informationBUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)
Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive
More informationSTD5N20L N-CHANNEL 200V Ω - 5A DPAK STripFET MOSFET
N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw Figure 1: Package STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL R DS (on) = 0.65 Ω @ 5V CONDUCTION LOSSES
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
More informationTrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
More informationPSMN013-80YS. N-channel LFPAK 80 V 12.9 mω standard level MOSFET
Rev. 1 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 6 V R DS(on),max 8 Ω I DSS,min.13 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More information