SN74LS541. Octal Buffer/Line Driver with 3 State Outputs LOW POWER SCHOTTKY
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1 SN74S54 Octal uffer/ine Driver with 3 State Outputs The SN74S54 is an octal buffer and line driver with the same functions as the S24, but with pinouts on the opposite side of the package. This device type is designed to be used as a memory address driver, clock driver and bus-oriented transmitter/ receiver. This device is especially useful as output ports for the microprocessors, allowing ease of layout and greater PC board density. ysteresis at Inputs to Improve Noise Margin PNP Inputs Reduce oading 3-State Outputs Drive us ines Inputs and Outputs Opposite Side of Package, llowing Easier Interface to Microprocessors Input Clamp Diodes imit igh-speed Termination Effects OW POWER SCOTTKY MRKING DIGRMS SN74S54N WYYWW OGIC ND CONNECTION DIGRM DIP (TOP VIEW) V CC PDIP N SUFFI CSE GND SOIC DW SUFFI CSE 75D S54 WYYWW GURNTEED OPERTING RNGES Symbol Parameter Min Typ Max Unit V CC Supply Voltage V SOEIJ M SUFFI CSE S54 WYWW T Operating mbient Temperature Range C I O Output Current igh 5 m I O Output Current ow 24 m = ssembly ocation W = Wafer ot Y, YY= Year WW = Work Week ORDERING INFORMTION Device Package Shipping SN74S54N PDIP 440 Units/ox SN74S54DW SOIC WIDE 38 Units/Rail SN74S54DWR2 SOIC WIDE 2500/Tape & Reel SN74S54M SOEIJ See Note SN74S54ME SOEIJ See Note. For ordering information on the EIJ version of the SOIC package, please contact your local ON Semiconductor representative. Semiconductor Components Industries, C, 06 July, 06 Rev. 4 Publication Order Number: SN74S54/D
2 SN74S54 E E 2 OCK DIGRM () (9) INPUTS E E 2 D OUTPUTS S540 S54 D D 2 D 3 D 4 D 5 (2) (3) (4) (5) (6) (8) Y (7) Y2 (6) Y3 (5) Y4 (4) Y5 = OW Voltage evel = IG Voltage evel = Immaterial = igh Impedance D 6 D 7 D 8 (7) (3) Y6 (8) (2) Y7 (9) () Y8 DC CRCTERISTICS OVER OPERTING TEMPERTURE RNGE (unless otherwise specified) Symbol Parameter imits Min Typ Max V I Input IG Voltage 2.0 V Unit Test Conditions Guaranteed Input IG Voltage for ll Inputs V I Input OW Voltage 0.8 V Guaranteed Input OW Voltage for ll Inputs V IK Input Clamp Diode Voltage V V CC = MIN, I IN = 8 m V O V O Output IG Voltage Output OW Voltage V V CC = MIN, I O = 3.0 m 2.0 V V CC = MIN, I O = M, V I = 0.5 V V I O = 2 m V CC = V CC MIN, V IN = V I or V I V I O = 24 m per Truth Table V T+ V T ysteresis V V CC = MIN I O Output Off Current IG μ V CC = M, = 2.7 V I O Output Off Current OW μ V CC = M, = 0.4 V I I Input IG Current μ V CC = M, V IN = 2.7 V 0. m V CC = M, V IN = 7.0 V I I Input OW Current 0.2 m V CC = M, V IN = 0.4 V I OS Short Circuit Current (Note ) m V CC = M I CC Power Supply Current Total, Output IG 32 m Total, Output OW 52 m Total Output 3-State 55 m. Not more than one output should be shorted at a time, nor for more than second. V CC = M 2
3 SN74S54 C CRCTERISTICS (T = 25 C) Symbol Parameter imits Min Typ Max t P Propagation Delay, 2 5 t P Data to Output 2 8 t P t P Output Enable Time to IG evel Output Enable Time to OW evel Unit ns 5 32 ns 38 ns Test Conditions V CC = 5.0 V C = 45 pf R = 667 Ω t P t P Output Disable Time to IG evel Output Disable Time to OW evel 0 8 ns 5 29 ns C = 5.0 pf C WVEFORMS V CC V IN.3 V.3 V t P t P R.3 V.3 V SW Figure. V IN.3 V.3 V TO OUTPUT UNDER TEST t P.3 V t P.3 V 5 kω Figure 2. C * SW2.5 V.5 V t P t P.5 V.5 V V O 0.5 V Figure 3..5 V.5 V t P t P V O.5 V.5 V 0.5 V SWITC POSITIONS SYMO SW t P Open t P t P t P Figure 4. Figure 5. SW2 Open 3
4 SN74S54 PCKGE DIMENSIONS T SETING PNE G E F 0 D P N N SUFFI PSTIC PCKGE CSE ISSUE E K C 0.25 (0.00) M T M M J P 0.25 (0.00) M T M NOTES:. DIMENSIONING ND TOERNCING PER NSI Y4.5M, CONTROING DIMENSION: INC. 3. DIMENSION TO CENTER OF ED WEN FORMED PRE. 4. DIMENSION DOES NOT INCUDE MOD FS. INCES MIIMETERS DIM MIN M MIN M C D E SC.27 SC F G 0.00 SC 2.54 SC J K SC 7.62 SC M N
5 SN74S54 PCKGE DIMENSIONS D SUFFI PSTIC SOIC PCKGE CSE 75D 05 ISSUE F D M M 0 E h 45 NOTES:. DIMENSIONS RE IN MIIMETERS. 2. INTERPRET DIMENSIONS ND TOERNCES PER SME Y4.5M, DIMENSIONS D ND E DO NOT INCUDE MOD PROTRUSION. 4. MIMUM MOD PROTRUSION 0.5 PER SIDE. 5. DIMENSION DOES NOT INCUDE DMR PROTRUSION. OWE PROTRUSION S E 0.3 TOT IN ECESS OF DIMENSION T MIMUM MTERI CONDITION M T S 8 e S T SETING PNE C MIIMETERS DIM MIN M C D E e.27 SC h
6 SN74S54 PCKGE DIMENSIONS M SUFFI SOEIJ PCKGE CSE ISSUE O e E E 0 D b 0.3 (0.005) M 0.0 (0.004) E Q M DETI P VIEW P c NOTES:. DIMENSIONING ND TOERNCING PER NSI Y4.5M, CONTROING DIMENSION: MIIMETER. 3. DIMENSIONS D ND E DO NOT INCUDE MOD FS OR PROTRUSIONS ND RE MESURED T TE PRTING INE. MOD FS OR PROTRUSIONS S NOT ECEED 0.5 (0.006) PER SIDE. 4. TERMIN NUMERS RE SOWN FOR REFERENCE ONY. 5. TE ED WIDT DIMENSION (b) DOES NOT INCUDE DMR PROTRUSION. OWE DMR PROTRUSION S E 0.08 (0.003) TOT IN ECESS OF TE ED WIDT DIMENSION T MIMUM MTERI CONDITION. DMR CNNOT E OCTED ON TE OWER RDIUS OR TE FOOT. MINIMUM SPCE ETWEEN PROTRUSIONS ND DJCENT ED TO E 0.46 ( 0.08). MIIMETERS INCES DIM MIN M MIN M b c D E e.27 SC SC E E M Q ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should uyer purchase or use SCIC products for any such unintended or unauthorized application, uyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUICTION ORDERING INFORMTION ITERTURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. ox 563, Denver, Colorado 8027 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative SN74S54/D
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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
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NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
SN74LS85MEL LOW POWER SCHOTTKY
The SN74LS85 is a 4-Bit Magnitude Camparator which compares two 4-bit words (A, B), each word having four Parallel Inputs (A0 A3, B0 B3); A3, B3 being the most significant inputs. Operation is not restricted
Schmitt Trigger Inputs Outputs Source/Sink 24 ma ACT132 Has TTL Compatible Inputs. ORDERING INFORMATION
The MC74AC/74ACT132 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free output signals. In addition, they have greater noise
MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648
The SN74LS247 is a BCD-to-Seven-Segment Decoder/Drivers. The LS247 composes the and with the tails. The LS247 has active-low outputs for direct drive of indicators. The LS247 features a lamp test input
NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
MC10H125. Quad MECL to TTL Translator
Quad MECL to TTL Translator The MC0H25 is a quad translator for interfacing data and control signals between the MECL section and saturated logic section of digital systems. The 0H part is a functional/pinout
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648
The SN74LS247 is a BCD-to-Seven-Segment Decoder/Drivers. The LS247 composes the and with the tails. The LS247 has active-low outputs for direct drive of indicators. The LS247 features a lamp test input
NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
NL27WZ14. Dual Schmitt-Trigger Inverter
N7WZ Dual Schmitt-Trigger Inverter The N7WZ is a high performance dual inverter with Schmitt Trigger inputs operating from a.5 to supply. Pin configuration and function are the same as the N7WZ0, but the
74VHC08 Quad 2-Input AND Gate
74VHC08 Quad 2-Input AND Gate Features High Speed: t PD = 4.3ns (Typ.) at T A = 25 C High noise immunity: V NIH = V NIL = 28% V CC (Min.) Power down protection is provided on all inputs Low power dissipation:
MC74ACT Input Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins
8 Input Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins The MC74ACT323 is an 8-bit universal shift/storage register with3-state outputs. Its function is similar to the MC74ACT299
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance values. The LS22 has an internal
74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
MC74AC00, MC74ACT00. Quad 2 Input NAND Gate. High Performance Silicon Gate CMOS
Quad 2Input NAND Gate ighperformance SiliconGate CMOS Features Output Drive Capability: 24 ma Operating oltage Range: 2 to 6 AC00; to ACT00 ow Input Current:.0 A igh Noise Immunity Characteristic of CMOS
NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator
Dual 2-Bit Dual-Supply Non-Inverting Level Translator The NLSV22T244 is a dual 2 bit configurable dual supply bus buffer level translator. The input ports A and the output ports B are designed to track
2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
T95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
SN74LS138MEL LOW POWER SCHOTTKY
The LSTTL/MSI SN74LS18 is a high speed 1-of-8 Decoder/ Demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input enables allow parallel
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