TN1005 Technical note

Transcription

1 TN005 Technical note 54ACT45 radiation report Introduction This technical note provides details of the total ionizing dose (TID) and the single event effects (SEE) that cover the QML-V qualification of the 54ACT45 device. It includes: TID results up to 00 krad (Si) SEE results: showing single event latchup (SEL) immunity up to 0 MeV-cm /mg effective linear energy transfer (effective LET). including single event transient (SET) and single event upset (SEU) characterizations. August 0 DocID0459 Rev /4

2 Contents TN005 Contents Total ionizing dose (TID) Single event effects (SEE) Test strategy Test conditions Reference documents Facilities Device information Test results SEL SET SEU Glossary of terms Appendix A General test setup (UCL) Appendix B SEL test method (UCL) Appendix C SEL test principle (UCL) Appendix D SET test method (UCL) Appendix E SET test principle (UCL) Appendix F SET block diagram (TAMU) Appendix G SEU test method (TAMU) Appendix H Summary of SEL runs 70 to 75 for the 54AC4 device Appendix I Summary of SEL runs 76 to 80 for the 54AC74 device Appendix J Summary of SEL runs to 6 for the 54AC44 device /4 DocID0459 Rev

3 TN005 Contents Appendix K Summary of SEL runs to 7 for the 54AC74 device Appendix L Summary of SEL runs to 8 for the 54AC6445 device Appendix M Summary of SET runs to 5 for the 54AC4 device Appendix N Summary of SET runs to 6 for the 54AC44 device Appendix O Summary of SET runs to 7 for the 54AC74 device Appendix P SET test results for the 54AC6445 (UCL) Appendix Q Summary of SET runs 9 to 85 for the 54AC6445 device Appendix R Summary of SEU runs 8 to 06 for the 54AC74 device Appendix S Summary of SEU runs to 7 for the 54AC74 device Revision history DocID0459 Rev /4

4 List of tables TN005 List of tables Table. TID test parameters and conditions Table. TID results Table. Facilities Table 4. Ions used in TAMU Table 5. Ions used in UCL (cocktail number ) Table 6. Ions used in UCL (cocktail number ) Table 7. 54AC Table 8. 54AC Table 9. 54AC Table 0. 54AC Table. 54AC Table. SEL results for four ACMOS devices tested with two heavy ions Table. SET results for four ACMOS devices tested with four heavy ions Table 4. Worst SET for the 54AC44 device, S/N = Table 5. Worst SET for the 54AC74 device, S/N = Table 6. Worst SET for the 54AC6445 device, S/N = Table 7. SEU results for two ACMOS devices tested with four heavy ions Table 8. Worst SEU for the 54AC74 device, S/N = Table 9. Worst SEU for the 54AC74 device, S/N = Table 0. Test apparatus Table. Summary of SEL runs 70 to 75 for the 54AC4 device Table. Summary of SEL runs 76 to 80 for the 54AC74 device Table. Summary of SEL runs to 6 for the 54AC44 device Table 4. Summary of SEL runs to 7 for the 54AC74 device Table 5. Summary of SEL runs to 8 for the 54AC6445 device Table 6. Summary of SET runs to 5 for the 54AC4 device Table 7. Summary of SET runs to 6 for the 54AC44 device Table 8. Summary of SET runs to 7 for the 54AC74 device Table 9. Summary of SET runs 9 to 85 for the 54AC6445 device Table 0. Summary of SEU runs 8 to 06 for the 54AC74 device Table. Summary of SEU runs to 7 for the 54AC74 device Table. Document revision history /4 DocID0459 Rev

5 TN005 List of figures List of figures Figure. 54AC Figure. 54AC Figure. 54AC Figure 4. 54AC Figure 5. 54AC Figure 6. SET Weibull cross section for the 54AC44 device Figure 7. SET Weibull cross section for the 54AC74 device Figure 8. SET Weibull cross section for the 54AC6445 device Figure 9. SEU Weibull cross section for the 54AC74 device Figure 0. SEU Weibull cross section for the 54AC74 device Figure. Test setup Figure. Common SEL characteristic Figure. Shape of OUT* and OUT/ signals Figure 4. SET block diagram (TAMU) Figure 5. Worst case on run 58, Xe 6, Figure 6. Worst case on run 4, Xe 6, Figure 7. Worst case on run 4, Xe 6, Figure 8. Worst case on run 6, Xe 6, DocID0459 Rev 5/4

6 Total ionizing dose (TID) TN005 Total ionizing dose (TID) TID test parameters, conditions, and results for the 54ACT45 device are presented below. 54ACT45 is a rad-hard octal bus transceiver -state. It was qualified up to 00 krad (Si). Table. TID test parameters and conditions Test parameter Test condition Test method MIL-STD-88 TM09 Applied spec SMD Test facility Source Total dose Dose rate Bias voltage Bias conditions Limits Before irradiation After room temperature annealing CEA, Saclay, France Pagure 00 krad 60 rad(si)/s 5.5 V Inputs at high level I CC μa I CCT.6 ma I OZL -0.6 μa I OZH 0.6 μa I CC 50 μa I CCT.6 ma I OZL -5 μa I OZH 5 μa 6/4 DocID0459 Rev

7 DocID0459 Rev 7/4 S/N Functional test passed? Table. TID results Test results at 0 krad Test results at 00 krad After room temperature annealing I CC value (μa) I CCT value (ma) I OZL value (μa) I OZH value (μa) Functional test passed? I CC value (μa) I CCT value (ma) I OZL value (μa) I OZH value (μa) Functional test passed? Yes Yes Yes Ref () Ref = reference part I CC value (μa) I CCT value (ma) I OZL value (μa) I OZH value (μa) TN005 Total ionizing dose (TID)

8 Single event effects (SEE) TN005 Single event effects (SEE). Test strategy The ACMOS logic series was characterized under heavy ions through five test vehicles: 54AC4, 54AC74, 54AC44, 54AC74, and 54AC6445. These test vehicles were chosen because they are representative of the technology.. Test conditions.. Reference documents.. Facilities Please refer to the following Online test procedures: JESD57 ASTM F 9 The devices were tested at two facilities (see Table ). Table. Facilities Devices tested Texas A&M cyclotron facility (TAMU), Texas, USA 54AC4, 54AC74 Universite Catholique de Louvain (UCL), Louvain-La-Neuve, Belgium 54AC44, 54AC74, 54AC6445 Table 4, Table 5, and Table 6 show the heavy ions used in each facility and their respective energy, range and linear energy transfer (LET). Table 4. Ions used in TAMU Ions Energy (MeV) Range (μm(si)) LET 40 Ar Kr Xe Ho /4 DocID0459 Rev

9 TN005 Single event effects (SEE) Table 5. Ions used in UCL (cocktail number () ) Ions Energy (MeV) Range (μm(si)) LET Xe See Appendix B: SEL test method (UCL) Table 6. Ions used in UCL (cocktail number () ) Ions Energy (MeV) Range (μm(si)) LET 58 Ni Kr See Appendix D: SET test method (UCL) For further information, please refer to Appendix A, Appendix B, Appendix C, Appendix D, Appendix E, Appendix F, and Appendix G. Data are presented by facility and then by event effects... Device information Table 7. 54AC4 Standard microcircuit drawing (SMD) Function Samples used Date code Date test Wafer fab Rad-hard hex Schmitt inverter 5 for SEL 5 for SET 0605A 0-Jul-007 Agrate Figure. 54AC4 Die marking Die layout Flat package 4 DocID0459 Rev 9/4

10 Single event effects (SEE) TN005 Table 8. 54AC74 Standard microcircuit drawing (SMD) Function Samples used Date code Date test Wafer fab Rad-hard hex D-type flip flop with clear 5 for SEL 5 for SEU 04A 0-Jul-007 Agrate Figure. 54AC74 Die marking Die layout Flat package 6 Table 9. 54AC44 Standard microcircuit drawing (SMD) Function Samples used Date code Date test Wafer fab Rad-hard octal bus buffer line driver - state for SEL for SET N/A 0-Nov-008 Agrate, Carrollton Figure. 54AC44 Die marking Die layout Flat package 0 0/4 DocID0459 Rev

11 TN005 Single event effects (SEE) Table 0. 54AC74 Standard microcircuit drawing (SMD) Function Samples used Date code Date test Wafer fab Rad-hard octal D-type flip flop -state for SET for SEU N/A 0-Nov-008 Agrate, Carrollton Figure 4. 54AC74 Die marking Die layout Flat package 0 Table. 54AC6445 Standard microcircuit drawing (SMD) Function Samples used Date code Date test Wafer fab Rad-hard 6-bit transceivor. V to 5.5 V bidirectional level shifter 4 for SEL 4 for SET N/A 6-Apr-00 Ang Mo Kio Figure 5. 54AC6445 Die marking Die layout Flat package 48 DocID0459 Rev /4

12 Single event effects (SEE) TN005. Test results.. SEL Table presents the SEL results for four ACMOS devices (54AC4, 54AC74, 54AC44, and 54AC6445) tested with two heavy ions (Ho and Xe). Table. SEL results for four ACMOS devices tested with two heavy ions Device 54AC4 54AC74 54AC44 54AC6445 Ion Ho Xe (ions/cm ) LET max. Effective LET max. Temperature ( C) Supply voltage x 0 7 x V CC = V CC max = 6 V.. SET No SEL was detected for any of the devices. These devices were SEL immune up to 0 MeV-cm /mg. For further details, refer to Appendix H, Appendix I, Appendix J, Appendix K, and Appendix L. Table presents the SET results for four ACMOS devices (54AC4, 54AC44, 54AC74, and 54AC6445) tested with four heavy ions (Ar, Kr, Xe, and Ni). The threshold voltage was ± 50 mv and the sampling rate was G/s. Some SET test results were recorded despite being very short (approximately 00 ns). /4 DocID0459 Rev

13 TN005 Single event effects (SEE) Table. SET results for four ACMOS devices tested with four heavy ions Device 54AC4 54AC44 54AC74 54AC6445 Ion Ar, Kr Xe Xe, Kr, Ar Xe, Kr, Ni (ions/cm ) LET max. Effective LET max. Saturated cross section x 0 8 x E E-05 Threshold LET Temperature ( C) Supply voltage 5 V CC = V CC max = to 5.5 V No SET was detected for the 54AC4 device. Figure 6, Figure 7, and Figure 8 below show the SET cross section curves for the 54AC44, 54AC74, and 54AC6445 devices. The curves below were parametrized using the Weibull fit. The worst amplitude was 50 mv. Figure 6. SET Weibull cross section for the 54AC44 device DocID0459 Rev /4

14 Single event effects (SEE) TN005 Figure 7. SET Weibull cross section for the 54AC74 device Figure 8. SET Weibull cross section for the 54AC6445 device 4/4 DocID0459 Rev

15 TN005 Single event effects (SEE) Table 4, Table 5, and Table 6 below present the worst SET for the 54AC44, 54AC74, and 54AC6445 devices. Table 4. Worst SET for the 54AC44 device, S/N = Run Ion LET Effective LET (ions/cm ) Number of events Cross section W S E-07 Xe E E Table 5. Worst SET for the 54AC74 device, S/N = Run Ion LET Effective LET (ions/cm ) Number of events Cross section W S E-07 Xe E+07.00E Table 6. Worst SET for the 54AC6445 device, S/N = Run Ion LET Effective LET (ions/cm ) Number of events Cross section W S E-05 Xe E-05.00E+06 7 Kr.0E-05 8 Ni...00E For further information, please refer to Appendix M, Appendix N, Appendix O, Appendix P, and Appendix Q. DocID0459 Rev 5/4

16 Single event effects (SEE) TN005.. SEU Table 7 presents the SEU results for two ACMOS devices (54AC74 and 54AC74) tested with four heavy ions (Ho, Xe, Kr, and Ar). Table 7. SEU results for two ACMOS devices tested with four heavy ions Device 54AC74 54AC74 Ion Xe, Kr, Ar, Ho Xe, Kr, Ar (ions/cm ) LET max. Effective LET max. x 0 8 x Saturated cross section 8.70E-07.94E-06 Threshold LET Temperature ( C) 5 Supply voltage V CC = V CC max = Figure 9, and Figure 0 below show the SEU Weibull cross section curves for the 54AC74 and 54AC74 devices. Figure 9. SEU Weibull cross section for the 54AC74 device 6/4 DocID0459 Rev

17 TN005 Single event effects (SEE) Figure 0. SEU Weibull cross section for the 54AC74 device Table 8 and Table 9 present the worst SEU for the 54AC74 and 54AC74 devices. Table 8. Worst SEU for the 54AC74 device, S/N = 5 Run Ion LET Effective LET (ions/cm ) Number of events Cross section W S E E-07 8 Ho E-07.00E E E E E E Ar E+07.E E+08 6.E E+08.5E Table 9. Worst SEU for the 54AC74 device, S/N = Run Ion LET Effective LET (ions/cm ) Number of events Cross section W S.8.00E E-06 Xe E E-06 4 Kr E-07.00E+07 7 Ar E For further information, please refer to Appendix R and Appendix S. DocID0459 Rev 7/4

18 Glossary of terms TN005 Glossary of terms Cross section: The number of events per unit fluence, expressed in units of cm²/device or cm²/bit. In the event of the device being tilted at an angle θ, the fluence must be corrected by multiplying it by cosine θ. DUT: Device under test Effective LET: The equivalent LET obtained by tilting the device under test with respect to the axis beam, hence increasing the path length of the ion and the total energy deposited. Effective LET = Incident LET x /cosine θ where θ is the tilt angle of the device. Effective LET may also be used in referring to the actual LET in a sensitive volume after taking into account the energy loss in dead layers such as metalization and passivation. Energy: The energy imparted to the ion by the accelerator. This may be in units of total energy (MeV) or energy per nucleon (MeV/n). : The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the dimensions (in cm /bit). also includes the flux integrated over time. Units are ions/cm. Flux: The number of ions passing through a unit area perpendicular to the beam in one second, expressed in ions/cm²/s. Ion species: Type of ion being used for irradiation (e.g. oxygen, neon) Level of interest: A cross section, energy, LET, or fluence having some particular significance for a program or project. Linear energy transfer (LET): The amount of energy deposited per unit length along the path of the incident ion. It is expressed in units of MeV-cm /mg which is the energy per unit length divided by the density of the irradiated medium. Range: The distance traveled, without straggling, in the target material by the specified ion of a given charge state and energy. Saturated cross section - also known as asymptotic cross section: The cross section for which an increase in LET does not result in an increased number of events. Serial number (S/N): Unique code and consecutive number assigned to all devices Single event burnout (SEB): Triggering of the parasitic bipolar structure in a power transistor, accompanied by regenerative feedback, avalanche, and high current condition. A SEB is potentially destructive unless suitably protected. Single event effect (SEE): Any measurable or observable change in the state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike. Single event functional interrupt (SEFI): A soft error that causes the component to reset, lock-up, or otherwise malfunction. SEFIs typically occur in complex devices with built-in state/control sections like modern memories (SDRAM, DRAM, NOR-and NAND-Flash) and all types of processors, FPGA, or ASICS. Two main types of SEFIs are distinguished depending on the action required to restore functionality: reset by software or by power cycling. The stored data may or may not be lost. 8/4 DocID0459 Rev

19 TN005 Glossary of terms Single event gate rapture or dielectric rupture (SEGR): Destructive rupture of a gate oxide or any dielectric layer by a single ion strike. This leads to gate leakage currents under bias and can be observed in power MOSFETs, linear integrated circuits (with internal capacitors), or as stuck bits in digital devices. Single event latchup (SEL): A permanent and potentially destructive state of the device under test whereby a parasitic thyristor structure is triggered by an ion strike and creates a low impedance, high current path. Single event transient (SET): A temporary voltage excursion (voltage spike) at a node in a logic or linear integrated circuit caused by a single energetic particle strike. Single event upset (SEU) - also known as a soft error: The change of state of a latched logic cell from one to zero or vice-versa. A single event upset is non-destructive and the logic element can be rewritten or reset. Threshold LET: The lowest LET at which a SEE occurs. Weibull fit: F(x) = A (-exp{-[(x-x 0 )/W] s }), with X = effective LET in MeV-cm /mg F(x) = the SEE cross section in cm² A = limiting or plateau cross section x 0 = onset parameter, such that F(x) = 0 for x < x 0 W = width parameter s = a dimensionless exponential DocID0459 Rev 9/4

20 General test setup (UCL) TN005 Appendix A General test setup (UCL) The test board required the following apparatus (Table 0) and setup (Figure ) to operate properly. Table 0. Test apparatus Equipment Function Test conditions MI-0 Power supply V DD and V DD ME-44, ME-48 Oscilloscope - ME-5 Guard system V DD : Gamme, Ith = 80 ma V DD : Gamme, Ith = 80 ma Figure. Test setup VDD VDD C0 C SQR_IN CLK 00 nf 00 nf R VCC VCC VCC VCC4 U CLK C9 00 nf VCC_INV 5 GND VCC U 4 NC7SZ04 CLK CLK CLK B B B B4 B5 B6 B B B B4 B5 B6 OUT OUT DIR -B -B -B -B4 -B5 -B6 -B7 -B8 -B -B -B -B4 -B5 -B6 -B7 -B8 -DIR GND -G -A -A -A -A4 -A5 -A6 -A7 -A8 -A -A -A -A4 -A5 -A6 -A7 -A8 -G A A A A4 A5 A6 A7 A8 A A A A4 A5 A6 A7 A8 54ACS6445 GAMS5065CB 0/4 DocID0459 Rev

21 TN005 SEL test method (UCL) Appendix B SEL test method (UCL) For SEL test detection, runs up to a fluence of.0 7 ions/cm² for SEL monitoring only were performed. This configuration allowed the latchup sensitivity of the device to be verified with cocktail number (see Table 5: Ions used in UCL (cocktail number )). The test stopped when the maximum fluence was reached or when a hundred events were detected. Appendix C SEL test principle (UCL) A power supply was applied to the device under test (DUT) through the guard system. To obtain 6 V on the DUT, a voltage of 6. V was applied. The threshold current of the guard system was set to 80 ma. When an event occurred, the guard system sent a trigger command to the oscilloscope. The power supply was held on for ms and cut off for 7 ms. It was then restarted with nominal current consumption. At the end of each run, the test program read the local scope counter of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored. Event description During the test, the guard system controlled the device s current. If the value exceeded 80 ma, the delatcher was triggered and the event was counted as a SEL.Figure shows a common SEL characteristic. Figure. Common SEL characteristic. Legend: Tm = hold time for ms; Tc = cut off time for 7 ms DocID0459 Rev /4

22 SET test method (UCL) TN005 Appendix D SET test method (UCL) For SET test detection, runs up to a fluence of x0 6 ions/cm² were performed. Latchup monitoring was also performed during these tests. This configuration allowed the SET and the SEL sensitivity of the device to be verified with cocktail number (see Table 6: Ions used in UCL (cocktail number )). The test stopped when the maximum fluence was reached or when four hundred events were detected. Appendix E SET test principle (UCL) The guard system was used on the power supply of the component to detect SEL and to prevent the destruction of the DUT. An oscilloscope was connected to OUT*(DUT pin ) and OUT/(DUT pin ) to perform the SET test. This oscilloscope was configured to monitor pulse width on the output signals. The shape of the OUT* and OUT/ signals are shown in Figure. Figure. Shape of OUT* and OUT/ signals Pulse width modifications of both signals were detected. When such a modification occurred, it was due to SET. The oscilloscope internal counter was then incremented and the trace was stored. At the end of each run, the test program read the local scope counter of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored. /4 DocID0459 Rev

23 TN005 SET block diagram (TAMU) Appendix F SET block diagram (TAMU) The DUT was irradiated to a maximum total ion fluence of x08 ion/cm². During the course of the test, five different serial numbers of the DUT (0, 0, 0, 04, 05) were irradiated with a minimum effective LET of. MeV-cm²/mg and a maximum effective LET of 8.9 MeV-cm²/mg. Except for the test where serial number 0 was irradiated to E8 ions/cm², the tests used a maximum fluence of E7 ions/cm². At TAMU, the lids were removed from the DUT to give full exposure to the top surface of the die using the 5 MeV/n beam. The output was monitored with both a data acquisition system to allow transients from all six outputs (Y, Y, Y, 4Y, 5Y and 6Y) to be captured, and a pair of high-resolution oscilloscopes to capture detailed images of the transient behavior on a sub-set of the transients. Output Y was monitored with the oscilloscope to capture both positive and negative going transients. The actual trigger setting was recorded in the run logs. The data acquisition system and the oscilloscopes were located in the control room while the power supplies, meters, and switch matrix were located in the exposure room. The outputs were brought to the control room using shielded SMA and BNC cables. Figure 4. SET block diagram (TAMU) DocID0459 Rev /4

24 SEU test method (TAMU) TN005 Appendix G SEU test method (TAMU) The devices under test were irradiated to a maximum total ion fluence of x08 ions/cm² at a maximum effective LET of 0 MeV-cm²/mg using the worst-case voltage ( V) and temperature (5 C). The lids were removed from the devices prior to testing to give full exposure to the top surface of the die. To achieve an effective linear energy transfer (LET) of 0 MeV-cm²/mg the devices were irradiated with Ho at an angle of approximately 54 degrees. The effective LET is the normal LET divided by the cosine of the angle of irradiation. The use of effective LET is accepted in test standards. The Ho range to the Bragg peak using a 5 MeV/n beam is μm. A variety of LETs and angles were used to obtain LET values from 8.5 to 0 MeV-cm²/mg. Prior to and immediately following the heavy ion exposure, the devices underwent a health check. This test verified that the device met the datasheet specifications and did not suffer any degradation that would confound the SEU data. The test platform also monitored for clear errors (all bits were set to 0 ) and clock errors (all bits switched states simultaneously). Note that the inputs were held in the opposite state from the outputs so that if a clock transient occurred, all bits would flip simultaneously. 4/4 DocID0459 Rev

25 DocID0459 Rev 5/4 Appendix H Run S/N V CC (V) 70 0 Appendix I T ( C) Summary of SEL runs 70 to 75 for the 54AC4 device Ion Energy (MeV) Table. Summary of SEL runs 70 to 75 for the 54AC4 device Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) Summary of SEL runs 76 to 80 for the 54AC74 device Time (s) 5.4E E+04 9 (#/cm ).00E Ho E E E E E E E E+06 Run S/N V CC (V) 76 T ( C) Ion Table. Summary of SEL runs 76 to 80 for the 54AC74 device Energy (MeV) Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) Time (s) 4.6E E+04 7 (#/cm ) 9.99E Ho E E E E E+04.00E+07 No. of events 0 No. of events 0 TN005 Summary of SEL runs 70 to 75 for the 54AC4 device

26 6/4 DocID0459 Rev Appendix J Run S/N V CC (V) T ( C) Summary of SEL runs to 6 for the 54AC44 device Ion Energy (MeV) Table. Summary of SEL runs to 6 for the 54AC44 device Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) E E E Xe E E E+0 47 Time (s) (#/cm ) No. of events.00e+07 0 Summary of SEL runs to 6 for the 54AC44 device TN005

27 DocID0459 Rev 7/4 Appendix K Run S/N V CC (V) T ( C) 6 5 Summary of SEL runs to 7 for the 54AC74 device Ion Energy (MeV) Table 4. Summary of SEL runs to 7 for the 54AC74 device Range (μm) LET Xe Tilt ( ) Effective range Effective LET Flux (#/cm.s) Time (s) (#/cm ) E E Kr Ar E E+0 0.6E E E E E+07 No. of events 0 TN005 Summary of SEL runs to 7 for the 54AC74 device

28 8/4 DocID0459 Rev Appendix L Run S/N V CC (V) V CC (V) Summary of SEL runs to 8 for the 54AC6445 device T ( C) Ion Table 5. Summary of SEL runs to 8 for the 54AC6445 device Energy (MeV) Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s).5e E E E Xe E E E E+0 0 Time (s) (#/cm ) V CC no. of events V CC no. of events.00e Summary of SEL runs to 8 for the 54AC6445 device TN005

29 DocID0459 Rev 9/4 Appendix M Run S/N V CC (V) 5 T ( C) Summary of SET runs to 5 for the 54AC4 device Ion Energy (MeV) Table 6. Summary of SET runs to 5 for the 54AC4 device Range (μm) LET 6.60 Tilt ( ) Effective range Effective LET.0 Flux (#/cm.s) Time (s) (#/cm ) 9.98E+06.4E Ar E+08. N/A N/A E E E E E+07 Kr E N/A N/A.00E E+06 No. of events Cross section/ device 0 - TN005 Summary of SET runs to 5 for the 54AC4 device

30 0/4 DocID0459 Rev Appendix N Run S/N V CC (V) T ( C) Summary of SET runs to 6 for the 54AC44 device Ion Energy (MeV) Table 7. Summary of SET runs to 6 for the 54AC44 device Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s).76e Xe E Time (s) (#/cm ) No. of events Cross section/ device 7.88E E E-07.00E E E E Summary of SET runs to 6 for the 54AC44 device TN005

31 DocID0459 Rev /4 Appendix O Run S/N V CC (V) T ( C) 5 Summary of SET runs to 7 for the 54AC74 device Ion Energy (MeV) Table 8. Summary of SET runs to 7 for the 54AC74 device Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) Time (s) (#/cm ) No. of events Cross section/ device E E E-07 Xe E E E E E-07 Kr Ar E E E E E TN005 Summary of SET runs to 7 for the 54AC74 device

32 SET test results for the 54AC6445 (UCL) TN005 Appendix P SET test results for the 54AC6445 (UCL) During irradiation, the SET results in Figure 5, Figure 6, Figure 7, and Figure 8 were observed. Figure 5. Worst case on run 58, Xe 6, 0 Figure 6. Worst case on run 4, Xe 6, 5 /4 DocID0459 Rev

33 TN005 SET test results for the 54AC6445 (UCL) Figure 7. Worst case on run 4, Xe 6, 5 Figure 8. Worst case on run 6, Xe 6, 5 DocID0459 Rev /4

34 4/4 DocID0459 Rev Appendix Q Run S/N V CC (V) V CC (V) Summary of SET runs 9 to 85 for the 54AC6445 device T ( C) Ion Table 9. Summary of SET runs 9 to 85 for the 54AC6445 device Energy (MeV) Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) 9.0E E+0 0 Time (s) (#/cm ) No. of events Cross section/ device 0-9.7E E E E E E E-06 5 Xe E E E E E E E E E-06.0E E E-06 Canceled without irradiation E E E E Xe E E E E Summary of SET runs 9 to 85 for the 54AC6445 device TN005

35 DocID0459 Rev 5/4 Run S/N V CC (V) V CC (V) T ( C) Table 9. Summary of SET runs 9 to 85 for the 54AC6445 device (continued) Ion Energy (MeV) Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) E E E E E-06.06E E-06.0E E E E E E E E E E E E Xe E+06.00E E E E E E E E E E E E E E E E E E-06 Time (s) (#/cm ) No. of events Cross section/ device TN005 Summary of SET runs 9 to 85 for the 54AC6445 device

36 6/4 DocID0459 Rev Run S/N V CC (V) 5.45E E E E E E E E E E-06.49E E-06 Xe E E E E E E E E E E E V CC (V) 5 T ( C) Table 9. Summary of SET runs 9 to 85 for the 54AC6445 device (continued) Ion Energy (MeV) Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s).47e E E-06 Kr E E E E-06 Time (s) (#/cm ) No. of events Cross section/ device Summary of SET runs 9 to 85 for the 54AC6445 device TN005

37 DocID0459 Rev 7/4 Run S/N V CC (V) V CC (V) T ( C) Table 9. Summary of SET runs 9 to 85 for the 54AC6445 device (continued) Ion Energy (MeV) Range (μm) LET.4E E E E E E-06 Kr E E E E+06.00E E E E Ni E E E E Tilt ( ) Effective range Effective LET Flux (#/cm.s) Time (s) (#/cm ) No. of events Cross section/ device 0 - TN005 Summary of SET runs 9 to 85 for the 54AC6445 device

38 8/4 DocID0459 Rev Appendix R Run S/N V CC (V) T ( C) Summary of SEU runs 8 to 06 for the 54AC74 device Ion Energy (MeV) Table 0. Summary of SEU runs 8 to 06 for the 54AC74 device Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) Time (s) (#/cm ) No. of events Cross section/ device Cross section/ bit E E E E E E E E E E E Ho E E+06.E E E E E E E E E E E E E E E Xe E E-06.5E E E E-06 4.E E E-06.69E E E E-06.9E E E-06.8E Kr E E E-06.E E E E-06.E E E E-06.50E E E E E+08.97E-08.86E-09 Ar E E+08.96E-08.E E E+08.8E-08.5E-09 Summary of SEU runs 8 to 06 for the 54AC74 device TN005

39 DocID0459 Rev 9/4 Run S/N V CC (V) T ( C) Ion Energy (MeV) Table 0. Summary of SEU runs 8 to 06 for the 54AC74 device (continued) Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) E E E-09 6.E E+05.96E E E Ar E E+07.08E E E E E-08.E E E E E E E+07 4.E-07.57E-08 Time (s) (#/cm ) No. of events Cross section/ device Cross section/ bit TN005 Summary of SEU runs 8 to 06 for the 54AC74 device

40 40/4 DocID0459 Rev Appendix S Run S/N V CC (V) T ( C) Summary of SEU runs to 7 for the 54AC74 device Ion Energy (MeV) Table. Summary of SEU runs to 7 for the 54AC74 device Range (μm) LET Tilt ( ) Effective range Effective LET Flux (#/cm.s) Time (s) (#/cm ) No. of events Cross section/ device Cross section/ bit 5 9.5E-06.7E E E E-06.0E E-05.8E-06 Xe E E-05.94E E-05.69E E+0 0.E-05.64E E E E E E-07 Kr E E E-07.4E E E E E-07.50E-08 Ar E-06.50E-07 9.E E E-08 Summary of SEU runs to 7 for the 54AC74 device TN005

41 TN005 Revision history Revision history Table. Document revision history Date Revision Changes 9-Aug-0 Initial release DocID0459 Rev 4/4

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