ECE Semiconductor Device and Material Characterization
|
|
- Anis Sims
- 6 years ago
- Views:
Transcription
1 ECE 4813 Semiconductor Device and Material Characterization Dr. Alan Doolittle School of Electrical and Computer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted to Dr. Dieter Schroder from Arizona State University for his generous contributions and freely given resources. Most of (>80%) the figures/slides in this lecture came from Dieter. Some of these figures are copyrighted and can be found within the class text, Semiconductor Device and Materials Characterization. Every serious microelectronics student should have a copy of this book!
2 Ion Beam Characterization Secondary Ion Mass Spectrometry Rutherford Backscattering
3 Ion Beam Characterization Emission Photon Spectroscopy Particle Induced X-Ray Emission Electron Emission E i Reflection Sputtering Secondary Ion Mass Spectrometry Rutherford Backscattering Absorption Ion Implantation
4 Secondary Ion Mass Spectrometry Ion Beam Screen Mass filter Primary Ions Microchannel Plate Sample Mass Spectrometer Secondary Ions Spectrum Ion Counter CRT Image Profile
5 Secondary Ion Mass Spectrometry Secondary ion mass spectrometry (SIMS) is the most common doping profile method Principle: Atoms sputtered from the sample; mass of the ejected ions analyzed Ion mass element identification; ion intensity element density Advantages: Gives depth profiles. Can analyze all elements; most sensitive of all analytical techniques. Can measure several impurities simultaneously Limitations: Destructive method. Subject to matrix effect: ion yields influenced by a change in surface composition. Need standards for concentration determination, independent depth measurement Sensitivity: Depends on impurity. Highest sensitivity is boron in Si at ~ cm -3 ; all other elements less sensitive. Sensitivity limited by interference from ions of similar mass/charge
6 SIMS Ion count density: use calibrated standard Time depth: measure depth of crater Ion Counts Density (cm -3 ) Time (s) Depth (µm)
7 Time-of-Flight SIMS (TOF-SIMS) Pulsed ion beam sputters the sample Ion time of flight is measured Measure transit time charge/mass ratio Low beam current low sputtering rate Suitable for organic surface contamination Sensitive for low metallic contamination (~ 10 8 cm - ) Sample Sputtering Ion Sputtered Ions M 1 M M 3 L Reflector (For Energy Focusing) Detector Detector t t = L V tof m q Primary Ions Extractor Sample M.A. Douglas and P.J. Chen, Quantitative Trace Metal Analysis of Si Surfaces by TOF-SIMS, Surf. Interface Anal. 6, , Dec
8 70 Line Cu grid on Si wafer Blue/green: SiO features TOF-SIMS Example Red/orange: tungsten features Purple: chlorine and carbon contamination 360 µm TOF Image
9 TOF-SIMS Example Bond pad failure; covered with siloxane Siloxane mapped distinctly from elemental Si Bonding pad with poor wire bond
10 Rutherford Backscattering (RBS) The incoming ping pong ball loses the most energy when it is scattered from which of the four balls? Bowling Ball Baseball Ping Pong Ball Tennis Ball Golf Ball
11 Rutherford Backscattering He ions with several MeV energy are scattered by the sample atoms The mass of the sample atom is determined from the energy of the scattered ions Scatter Event Helium Ion Detector Scattered He Ion Sample Sample Detector Incident He Ion
12 Ion Scattering Conservation of energy E 0 = M1v 0 / = E1 + E = M1v 1 / + Mv / Conservation of momentum Parallel M v = M v cosθ + M cosφ Perpendicular : v : 0 = M1v 1 sinθ Mv sinφ Eliminating φ and v For M 1 < M, use + v v E E M M 1 1 sin θ M1 cos 0 = ± M M 1 sin θ 1 1 cos 0 = M M M + M + + M θ θ
13 Rutherford Backscattering He ions of -3 MeV are scattered; energy loss gives information Nondestructive Good for heavy elements on light substrate, e.g., silicides Sensitivity cm -3 K: kinematic factor R = M 1 /M K = E E 1 0 = [ 1 ( R sin( θ )) + R cos( θ )] (1+ R) E. Rutherford
14 Rutherford Backscattering RBS works best for heavy elements on light substrates He, 1-3 MeV 100 nm TiN on Si Yield Si Substrate Ti Yield N Si Energy ~ Mass Ag Au N Energy (MeV)
15 Rutherford Backscattering RBS works best for heavy elements on light substrates He, 1-3 MeV Yield = σωqnt x t 0 Si (x=t) Si (x=0) Au (x=t) Au (x=0) σ = q Z Z 4 ( 1 ( R sinθ ) + cosθ ) 1 4 4E sin θ 1 ( sinθ ) R Yield Energy ~ Mass σ: scattering cross section Ω: solid detector angle Q: no. of incident ions N: target atom density t: thickness
16 Rutherford Backscattering 1 Energy 3 TiN Ag Ag Yield C Si Pa-n 3.7 MeV He N O Si Ti Channel
17 Channeling He ions are scattered more when they are not channeled Channeling Scient. Am. 18, 90 (March 1968)
18 Thickness Measurements Thickness determined by measuring the various energies E 0 M M E 1 0 E 0 - E in E 3 =K 1 E 0 Yield E K 1 (E 0 - E in ) d E =K 1 (E 0 - E in )- E out E 1 E E 3 E 0 E E 3 = K1E 0; E = K1( E0 E in ) E out E = E3 E = K1 E + Eout = [ S ]d in 0 [S 0 ]: backscattering energy loss factor (ev/å) E 1 = K ( E0 E in ) E out
19 Silicide Formation RBS is ideal for measuring the formation of silicides Pt Si E 0 E 3 =K 1 E 0 d Yield E 1 E E 3 E Si Pt PtSi d M.A. Nicolet et al. Science, 177, 841 (197) Yield E 11 E E 1 ECE E 4813 E 3 EDr. Alan Doolittle
20 RBS Examples Blood Abalone Shell MeV He Carbon MeV He O Na Cl O Ca K Yield Fe Sr I Yield Sr Pb Pb Energy Energy M.A. Nicolet et al. Science, 177, 841 (197)
21 Review Questions What is the main application for SIMS? What is the principle for RBS? What is TOF-SIMS? What is channeling? How are the SIMS vertical and horizontal data converted?
Lecture 22 Ion Beam Techniques
Lecture 22 Ion Beam Techniques Schroder: Chapter 11.3 1/44 Announcements Homework 6/6: Will be online on later today. Due Wednesday June 6th at 10:00am. I will return it at the final exam (14 th June).
More informationECE Semiconductor Device and Material Characterization
ECE 4813 Semiconductor Device and Material Characterization Dr. Alan Doolittle School of Electrical and Computer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS
2016 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)
More informationECE Semiconductor Device and Material Characterization
ECE 4813 Semiconductor Device and Material Characterization Dr. Alan Doolittle School of Electrical and Computer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted
More informationRutherford Backscattering Spectrometry
Rutherford Backscattering Spectrometry EMSE-515 Fall 2005 F. Ernst 1 Bohr s Model of an Atom existence of central core established by single collision, large-angle scattering of alpha particles ( 4 He
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS. Byungha Shin Dept. of MSE, KAIST
2015 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 5: RBS Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 4: XRF
2016 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 4: XRF Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1 lecture)
More informationSilver Thin Film Characterization
Silver Thin Film Characterization.1 Introduction Thin films of Ag layered structures, typically less than a micron in thickness, are tailored to achieve desired functional properties. Typical characterization
More informationSecondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) ELEC-L3211 Postgraduate Course in Micro and Nanosciences Department of Micro and Nanosciences Personal motivation and experience on SIMS Offers the possibility to
More informationMS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary. Byungha Shin Dept. of MSE, KAIST
2015 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1
More informationMSE 321 Structural Characterization
Auger Spectroscopy Auger Electron Spectroscopy (AES) Scanning Auger Microscopy (SAM) Incident Electron Ejected Electron Auger Electron Initial State Intermediate State Final State Physical Electronics
More informationAuger Electron Spectroscopy
Auger Electron Spectroscopy Auger Electron Spectroscopy is an analytical technique that provides compositional information on the top few monolayers of material. Detect all elements above He Detection
More informationIV. Surface analysis for chemical state, chemical composition
IV. Surface analysis for chemical state, chemical composition Probe beam Detect XPS Photon (X-ray) Photoelectron(core level electron) UPS Photon (UV) Photoelectron(valence level electron) AES electron
More informationAuger Electron Spectroscopy (AES) Prof. Paul K. Chu
Auger Electron Spectroscopy (AES) Prof. Paul K. Chu Auger Electron Spectroscopy Introduction Principles Instrumentation Qualitative analysis Quantitative analysis Depth profiling Mapping Examples The Auger
More informationANALYSIS OF PLASMA FACING MATERIALS IN CONTROLLED FUSION DEVICES. Marek Rubel
ANALYSIS OF PLASMA FACING MATERIALS IN CONTROLLED FUSION DEVICES Marek Rubel Alfvén Laboratory, Royal Institute of Technology, Association EURATOM VR, Stockholm, Sweden Acknowledgements Paul Coad and Guy
More informationSurface analysis techniques
Experimental methods in physics Surface analysis techniques 3. Ion probes Elemental and molecular analysis Jean-Marc Bonard Academic year 10-11 3. Elemental and molecular analysis 3.1.!Secondary ion mass
More informationIntroduction to X-ray Photoelectron Spectroscopy (XPS) XPS which makes use of the photoelectric effect, was developed in the mid-1960
Introduction to X-ray Photoelectron Spectroscopy (XPS) X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA) is a widely used technique to investigate
More informationAPPLICATION OF THE NUCLEAR REACTION ANALYSIS FOR AGING INVESTIGATIONS
1 APPLICATION OF THE NUCLEAR REACTION ANALYSIS FOR AGING INVESTIGATIONS G.Gavrilov, A.Krivchitch, V.Lebedev PETERSBURG NUCLEAR PHYSICS INSTITUTE E-mail: lebedev@pnpi.spb.ru kriv@rec03.pnpi.spb.ru We used
More informationLecture 23 X-Ray & UV Techniques
Lecture 23 X-Ray & UV Techniques Schroder: Chapter 11.3 1/50 Announcements Homework 6/6: Will be online on later today. Due Wednesday June 6th at 10:00am. I will return it at the final exam (14 th June).
More informationMT Electron microscopy Scanning electron microscopy and electron probe microanalysis
MT-0.6026 Electron microscopy Scanning electron microscopy and electron probe microanalysis Eero Haimi Research Manager Outline 1. Introduction Basics of scanning electron microscopy (SEM) and electron
More informationSecondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) Lasse Vines 1 Secondary ion mass spectrometry O Zn 10000 O 2 Counts/sec 1000 100 Li Na K Cr ZnO 10 ZnO 2 1 0 20 40 60 80 100 Mass (AMU) 10 21 10 20 Si 07 Ge 0.3 Atomic
More informationQuality Assurance. Purity control. Polycrystalline Ingots
Quality Assurance Purity control Polycrystalline Ingots 1 Gamma Spectrometry Nuclide Identification Detection of Impurity Traces 1.1 Nuclides Notation: Atomic Mass Atomic Number Element Neutron Atomic
More informationSecondaryionmassspectrometry
Secondaryionmassspectrometry (SIMS) 1 Incident Ion Techniques for Surface Composition Analysis Mass spectrometric technique 1. Ionization -Electron ionization (EI) -Chemical ionization (CI) -Field ionization
More informationSecondary Ion Mass Spectrometry (SIMS) Thomas Sky
1 Secondary Ion Mass Spectrometry (SIMS) Thomas Sky Depth (µm) 2 Characterization of solar cells 0,0 1E16 1E17 1E18 1E19 1E20 0,2 0,4 0,6 0,8 1,0 1,2 P Concentration (cm -3 ) Characterization Optimization
More informationApplication of Surface Analysis for Root Cause Failure Analysis
Application of Surface Analysis for Root Cause Failure Analysis David A. Cole Evans Analytical Group East Windsor, NJ Specialists in Materials Characterization Outline Introduction X-Ray Photoelectron
More informationSecondary Ion Mass Spectroscopy (SIMS)
Secondary Ion Mass Spectroscopy (SIMS) Analyzing Inorganic Solids * = under special conditions ** = semiconductors only + = limited number of elements or groups Analyzing Organic Solids * = under special
More informationION BEAM TECHNIQUES. Ion beam characterization techniques are illustrated in Fig
ION BEAM TECHNIQUES Ion beam characterization techniques are illustrated in Fig. 11.21. 1 ION BEAM TECHNIQUES Incident ions are absorbed, emitted, scattered, or reflected leading to light, electron or
More information( 1+ A) 2 cos2 θ Incident Ion Techniques for Surface Composition Analysis Ion Scattering Spectroscopy (ISS)
5.16 Incident Ion Techniques for Surface Composition Analysis 5.16.1 Ion Scattering Spectroscopy (ISS) At moderate kinetic energies (few hundred ev to few kev) ion scattered from a surface in simple kinematic
More informationSurface Sensitivity & Surface Specificity
Surface Sensitivity & Surface Specificity The problems of sensitivity and detection limits are common to all forms of spectroscopy. In its simplest form, the question of sensitivity boils down to whether
More informationOverview of X-Ray Fluorescence Analysis
Overview of X-Ray Fluorescence Analysis AMPTEK, INC., Bedford, MA 01730 Ph: +1 781 275 2242 Fax: +1 781 275 3470 sales@amptek.com 1 What is X-Ray Fluorescence (XRF)? A physical process: Emission of characteristic
More informationDetecting high energy photons. Interactions of photons with matter Properties of detectors (with examples)
Detecting high energy photons Interactions of photons with matter Properties of detectors (with examples) Interactions of high energy photons with matter Cross section/attenution length/optical depth Photoelectric
More informationSpectroscopy on Mars!
Spectroscopy on Mars! Pathfinder Spirit and Opportunity Real World Friday H2A The Mars Pathfinder: Geological Elemental Analysis On December 4th, 1996, the Mars Pathfinder was launched from earth to begin
More informationMSE 321 Structural Characterization
Auger Spectroscopy Auger Electron Spectroscopy (AES) Scanning Auger Microscopy (SAM) Incident Electron Ejected Electron Auger Electron Initial State Intermediate State Final State Physical Electronics
More informationToF-SIMS or XPS? Xinqi Chen Keck-II
ToF-SIMS or XPS? Xinqi Chen Keck-II 1 Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) Not ToF MS (laser, solution) X-ray Photoelectron Spectroscopy (XPS) 2 3 Modes of SIMS 4 Secondary Ion Sputtering
More informationSecondary Ion Mass Spectrometry (SIMS)
CHEM53200: Lecture 10 Secondary Ion Mass Spectrometry (SIMS) Major reference: Surface Analysis Edited by J. C. Vickerman (1997). 1 Primary particles may be: Secondary particles can be e s, neutral species
More informationApplied Nuclear Physics (Fall 2006) Lecture 21 (11/29/06) Detection of Nuclear Radiation: Pulse Height Spectra
22.101 Applied Nuclear Physics (Fall 2006) Lecture 21 (11/29/06) Detection of Nuclear Radiation: Pulse Height Spectra References: W. E. Meyerhof, Elements of Nuclear Physics (McGraw-Hill, New York, 1967),
More informationProgress on Transmutation Experiments induced by D 2 gas permeation
12th International Workshop on Anomalies in Hydrogen Loaded Metals Progress on Transmutation Experiments induced by D 2 gas permeation T.Itoh 1,2, J. Kasagi 1, Y.Iwamura 1, S.Tsuruga 3 1 Condensed Matter
More informationHigh-Resolution Gamma-Ray and Neutron Detectors For Nuclear Spectroscopy
High-Resolution Gamma-Ray and Neutron Detectors For Nuclear Spectroscopy Thomas Niedermayr, I. D. Hau, S. Terracol, T. Miyazaki, S. E. Labov and S. Friedrich Former colleagues: M. F. Cunningham, J. N.
More informationDesorption and Sputtering on Solid Surfaces by Low-energy Multicharged Ions
Desorption and Sputtering on Solid Surfaces by Low-energy Multicharged Ions K. Motohashi Department of Biomedical Engineering, Toyo University motohashi@toyonet.toyo.ac.jp 1. Background Sputtering and
More informationGeneration of X-Rays in the SEM specimen
Generation of X-Rays in the SEM specimen The electron beam generates X-ray photons in the beam-specimen interaction volume beneath the specimen surface. Some X-ray photons emerging from the specimen have
More informationCharacterization of Ultra-Shallow Implants Using Low-Energy Secondary Ion Mass Spectrometry: Surface Roughening under Cesium Bombardment
Characterization of Ultra-Shallow Implants Using Low-Energy Secondary Ion Mass Spectrometry: Surface Roughening under Cesium Bombardment vyuji Kataoka vmayumi Shigeno vyoko Tada vkazutoshi Yamazaki vmasataka
More informationX-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu
X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu X-ray Photoelectron Spectroscopy Introduction Qualitative analysis Quantitative analysis Charging compensation Small area analysis and XPS imaging
More informationDetekce a spektrometrie neutronů. neutron detection and spectroscopy
Detekce a spektrometrie neutronů neutron detection and spectroscopy 1. Slow neutrons 2. Fast neutrons 1 1. Slow neutrons neutron kinetic energy E a) charged particles are produced, protons, α particle,
More informationNeutron emission asymmetries from linearly polarized γ rays on nat Cd, nat Sn, and 181 Ta
Neutron emission asymmetries from linearly polarized γ rays on nat Cd, nat Sn, and 8 Ta Clarke Smith, Gerald Feldman, and the HIγS Collaboration George Triangle C. Smith, G. Feldman (GWU) Washington University
More informationApplied Nuclear Physics (Fall 2006) Lecture 19 (11/22/06) Gamma Interactions: Compton Scattering
.101 Applied Nuclear Physics (Fall 006) Lecture 19 (11//06) Gamma Interactions: Compton Scattering References: R. D. Evans, Atomic Nucleus (McGraw-Hill New York, 1955), Chaps 3 5.. W. E. Meyerhof, Elements
More informationLecture 11 Surface Characterization of Biomaterials in Vacuum
1 Lecture 11 Surface Characterization of Biomaterials in Vacuum The structure and chemistry of a biomaterial surface greatly dictates the degree of biocompatibility of an implant. Surface characterization
More informationRutherford Backscattering Spectrometry
Rutherford Backscattering Spectrometry Timothy P. Spila, Ph.D. Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign 214University of Illinois Board of Trustees. All
More informationJoint ICTP-IAEA Workshop on Nuclear Data for Analytical Applications October 2013
2495-03 Joint ICTP-IAEA Workshop on Nuclear Data for Analytical Applications 21-25 October 2013 Ion Beam Analysis Techniques for non-destructive Profiling Studies M. Kokkoris Department of Physics National
More informationThe Configuration of the Atom: Rutherford s Model
CHAPTR 2 The Configuration of the Atom: Rutherford s Model Problem 2.2. (a) When α particles with kinetic energy of 5.00 MeV are scattered at 90 by gold nuclei, what is the impact parameter? (b) If the
More informationLAB REPORT ON XRF OF POTTERY SAMPLES By BIJOY KRISHNA HALDER Mohammad Arif Ishtiaque Shuvo Jie Hong
LAB REPORT ON XRF OF POTTERY SAMPLES By BIJOY KRISHNA HALDER Mohammad Arif Ishtiaque Shuvo Jie Hong Introduction: X-ray fluorescence (XRF) spectrometer is an x-ray instrument used for routine, relatively
More informationAuger Electron Spectroscopy (AES)
1. Introduction Auger Electron Spectroscopy (AES) Silvia Natividad, Gabriel Gonzalez and Arena Holguin Auger Electron Spectroscopy (Auger spectroscopy or AES) was developed in the late 1960's, deriving
More informationLecture 5. X-ray Photoemission Spectroscopy (XPS)
Lecture 5 X-ray Photoemission Spectroscopy (XPS) 5. Photoemission Spectroscopy (XPS) 5. Principles 5.2 Interpretation 5.3 Instrumentation 5.4 XPS vs UV Photoelectron Spectroscopy (UPS) 5.5 Auger Electron
More informationChapter 2 Problem Solutions
Chapter Problem Solutions 1. If Planck's constant were smaller than it is, would quantum phenomena be more or less conspicuous than they are now? Planck s constant gives a measure of the energy at which
More informationChemistry 311: Instrumentation Analysis Topic 2: Atomic Spectroscopy. Chemistry 311: Instrumentation Analysis Topic 2: Atomic Spectroscopy
Topic 2b: X-ray Fluorescence Spectrometry Text: Chapter 12 Rouessac (1 week) 4.0 X-ray Fluorescence Download, read and understand EPA method 6010C ICP-OES Winter 2009 Page 1 Atomic X-ray Spectrometry Fundamental
More information5) Surface photoelectron spectroscopy. For MChem, Spring, Dr. Qiao Chen (room 3R506) University of Sussex.
For MChem, Spring, 2009 5) Surface photoelectron spectroscopy Dr. Qiao Chen (room 3R506) http://www.sussex.ac.uk/users/qc25/ University of Sussex Today s topics 1. Element analysis with XPS Binding energy,
More informationNotes on x-ray scattering - M. Le Tacon, B. Keimer (06/2015)
Notes on x-ray scattering - M. Le Tacon, B. Keimer (06/2015) Interaction of x-ray with matter: - Photoelectric absorption - Elastic (coherent) scattering (Thomson Scattering) - Inelastic (incoherent) scattering
More informationPhysics 102: Lecture 23
Physics 102: Lecture 23 De Broglie Waves & Compton Scattering Physics 102: Lecture 23, Slide 1 Early Indications of Problems with Classical Physics Blackbody radiation Photoelectric effect Wave-particle
More informationAuger Electron Spectroscopy Overview
Auger Electron Spectroscopy Overview Also known as: AES, Auger, SAM 1 Auger Electron Spectroscopy E KLL = E K - E L - E L AES Spectra of Cu EdN(E)/dE Auger Electron E N(E) x 5 E KLL Cu MNN Cu LMM E f E
More informationCHEM*3440. X-Ray Energies. Bremsstrahlung Radiation. X-ray Line Spectra. Chemical Instrumentation. X-Ray Spectroscopy. Topic 13
X-Ray Energies very short wavelength radiation 0.1Å to 10 nm (100 Å) CHEM*3440 Chemical Instrumentation Topic 13 X-Ray Spectroscopy Visible - Ultraviolet (UV) - Vacuum UV (VUV) - Extreme UV (XUV) - Soft
More informationGaetano L Episcopo. Scanning Electron Microscopy Focus Ion Beam and. Pulsed Plasma Deposition
Gaetano L Episcopo Scanning Electron Microscopy Focus Ion Beam and Pulsed Plasma Deposition Hystorical background Scientific discoveries 1897: J. Thomson discovers the electron. 1924: L. de Broglie propose
More informationElectron Microscopy I
Characterization of Catalysts and Surfaces Characterization Techniques in Heterogeneous Catalysis Electron Microscopy I Introduction Properties of electrons Electron-matter interactions and their applications
More informationFundamentals of Nanoscale Film Analysis
Fundamentals of Nanoscale Film Analysis Terry L. Alford Arizona State University Tempe, AZ, USA Leonard C. Feldman Vanderbilt University Nashville, TN, USA James W. Mayer Arizona State University Tempe,
More informationORTEC AN34 Experiment 10 Compton Scattering
EQUIPMENT NEEDED FROM ORTEC 113 Preamplifier (2 ea.) TRUMP-PCI-2K MCA System including suitable PC operating Windows 98/2000/XP (other ORTEC MCAs may be used) 266 Photomultiplier Tube Base (2 ea.) 4001A/4002D
More informationMethods of surface analysis
Methods of surface analysis Nanomaterials characterisation I RNDr. Věra Vodičková, PhD. Surface of solid matter: last monoatomic layer + absorbed monolayer physical properties are effected (crystal lattice
More informationAtomic Collisions and Backscattering Spectrometry
2 Atomic Collisions and Backscattering Spectrometry 2.1 Introduction The model of the atom is that of a cloud of electrons surrounding a positively charged central core the nucleus that contains Z protons
More informationSecondary-Ion Mass Spectrometry
Principle of SIMS composition depth profiling with surface analysis techniques? Secondary-Ion Mass Spectrometry erosion of specimen surface by energetic particle bombardment sputtering two possibilities
More informationIN THE NAME OF ALLAH, THE MOST MERCIFUL AND COMPASSIONATE
IN THE NAME OF ALLAH, THE MOST MERCIFUL AND COMPASSIONATE Ion Beam Analysis of Diamond Thin Films Sobia Allah Rakha Experimental Physics Labs 04-03-2010 Outline Diamond Nanostructures Deposition of Diamond
More informationIon-beam techniques. Ion beam. Electrostatic Accelerators. Van de Graaff accelerator Pelletron Tandem Van de Graaff
Ion-beam techniques RBS Target nucleus Ion beam STIM RBS: Rutherford backscattering ERD: Elastic recoil detection PIXE: Particle induced x-ray emission PIGE: Particle induced gamma emission NRA: Nuclear
More informationThe Particle Nature of Matter. Home Work Solutions
Chapter 4 The Particle Nature of Matter. Home Work Solutions 4. Problem 4.0 (In the text book) A typical Rutherford scattering apparatus consists of an evacuated tube containing a polonium- 20 α source
More informationEE 527 MICROFABRICATION. Lecture 5 Tai-Chang Chen University of Washington
EE 527 MICROFABRICATION Lecture 5 Tai-Chang Chen University of Washington MICROSCOPY AND VISUALIZATION Electron microscope, transmission electron microscope Resolution: atomic imaging Use: lattice spacing.
More informationInteraction theory Photons. Eirik Malinen
Interaction theory Photons Eirik Malinen Introduction Interaction theory Dosimetry Radiation source Ionizing radiation Atoms Ionizing radiation Matter - Photons - Charged particles - Neutrons Ionizing
More informationAuger Electron Spectrometry. EMSE-515 F. Ernst
Auger Electron Spectrometry EMSE-515 F. Ernst 1 Principle of AES electron or photon in, electron out radiation-less transition Auger electron electron energy properties of atom 2 Brief History of Auger
More informationChemistry Instrumental Analysis Lecture 19 Chapter 12. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 19 Chapter 12 There are three major techniques used for elemental analysis: Optical spectrometry Mass spectrometry X-ray spectrometry X-ray Techniques include:
More informationBeyond Bohr Model. Wave-particle duality, Probabilistic formulation of quantum physics Chap. 28
Lecture 22-1 Beyond Bohr Model Unfortunately, the classical visualization of the orbiting electron turns out to be wrong even though it still gives us a simple way to think of the atom. Quantum Mechanics
More informationhν' Φ e - Gamma spectroscopy - Prelab questions 1. What characteristics distinguish x-rays from gamma rays? Is either more intrinsically dangerous?
Gamma spectroscopy - Prelab questions 1. What characteristics distinguish x-rays from gamma rays? Is either more intrinsically dangerous? 2. Briefly discuss dead time in a detector. What factors are important
More informationAtomic Physics. Chapter 6 X ray. Jinniu Hu 24/12/ /20/13
Atomic Physics Chapter 6 X ray 11/20/13 24/12/2018 Jinniu Hu 1!1 6.1 The discovery of X ray X-rays were discovered in 1895 by the German physicist Wilhelm Roentgen. He found that a beam of high-speed electrons
More informationAdvanced Materials Characterization Workshop June 3 and 4, 2013
University of Illinois at Urbana-Champaign Materials Research Laboratory Advanced Materials Characterization Workshop June 3 and 4, 2013 Rutherford Backscattering & Secondary Ion Mass Spectrometery Timothy
More informationDiffraction: spreading of waves around obstacles (EM waves, matter, or sound) Interference: the interaction of waves
Diffraction & Interference Diffraction: spreading of waves around obstacles (EM waves, matter, or sound) Interference: the interaction of waves Diffraction in Nature What is Interference? The resultant
More informationChemical Analysis in TEM: XEDS, EELS and EFTEM. HRTEM PhD course Lecture 5
Chemical Analysis in TEM: XEDS, EELS and EFTEM HRTEM PhD course Lecture 5 1 Part IV Subject Chapter Prio x-ray spectrometry 32 1 Spectra and mapping 33 2 Qualitative XEDS 34 1 Quantitative XEDS 35.1-35.4
More informationLecture 16 Light transmission and optical detectors
Lecture 6 Light transmission and optical detectors Charged particle traversing through a material can generate signal in form of light via electromagnetic interactions with orbital electrons of the atoms
More informationAP 5301/8301 Instrumental Methods of Analysis and Laboratory Lecture 11 Ion Beam Analysis
1 AP 5301/8301 Instrumental Methods of Analysis and Laboratory Lecture 11 Ion Beam Analysis Prof YU Kin Man E-mail: kinmanyu@cityu.edu.hk Tel: 344-7813 Office: P64 Lecture 8: outline Introduction o Ion
More informationDiffusion and Ion implantation Reference: Chapter 4 Jaeger or Chapter 3 Ruska N & P Dopants determine the resistivity of material Note N lower
Diffusion and Ion implantation Reference: Chapter 4 Jaeger or Chapter 3 Ruska N & P Dopants determine the resistivity of material Note N lower resistavity than p: due to higher carrier mobility Near linear
More informationCopyright 2008, University of Chicago, Department of Physics. Experiment VI. Gamma Ray Spectroscopy
Experiment VI Gamma Ray Spectroscopy 1. GAMMA RAY INTERACTIONS WITH MATTER In order for gammas to be detected, they must lose energy in the detector. Since gammas are electromagnetic radiation, we must
More informationAtomic and Nuclear Analytical Methods
H.R. Verma Atomic and Nuclear Analytical Methods XRF, Mössbauer, XPS, NAA and Ion-Beam Spectroscopic Techniques With 128 Figures and 24 Tables Springer Contents 1 X-ray Fluorescence (XRF) and Particle-Induced
More informationSurface and Interface Characterization of Polymer Films
Surface and Interface Characterization of Polymer Films Jeff Shallenberger, Evans Analytical Group 104 Windsor Center Dr., East Windsor NJ Copyright 2013 Evans Analytical Group Outline Introduction to
More informationElectron Microprobe Analysis 1 Nilanjan Chatterjee, Ph.D. Principal Research Scientist
12.141 Electron Microprobe Analysis 1 Nilanjan Chatterjee, Ph.D. Principal Research Scientist Massachusetts Institute of Technology Electron Microprobe Facility Department of Earth, Atmospheric and Planetary
More informationElectron Microprobe Analysis 1 Nilanjan Chatterjee, Ph.D. Principal Research Scientist
12.141 Electron Microprobe Analysis 1 Nilanjan Chatterjee, Ph.D. Principal Research Scientist Massachusetts Institute of Technology Electron Microprobe Facility Department of Earth, Atmospheric and Planetary
More informationReview of Semiconductor Fundamentals
ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,
More informationIntroduction to SIMS Basic principles Components Techniques Drawbacks Figures of Merit Variations Resources
Introduction to SIMS Basic principles Components Techniques Drawbacks Figures of Merit Variations Resources New technique for surface chemical analysis. SIMS examines the mass of ions, instead of energy
More informationPolarization Correlation in the Gamma- Gamma Decay of Positronium
Polarization Correlation in the Gamma- Gamma Decay of Positronium Bin LI Department of Physics & Astronomy, University of Pittsburgh, PA 56, U.S.A April 5, Introduction Positronium is an unstable bound
More informationLOW-TEMPERATURE Si (111) HOMOEPITAXY AND DOPING MEDIATED BY A MONOLAYER OF Pb
LOW-TEMPERATURE Si (111) HOMOEPITAXY AND DOPING MEDIATED BY A MONOLAYER OF Pb O.D. DUBON, P.G. EVANS, J.F. CHERVINSKY, F. SPAEPEN, M.J. AZIZ, and J.A. GOLOVCHENKO Division of Engineering and Applied Sciences,
More informationPositron Annihilation Spectroscopy - A non-destructive method for material testing -
Maik Butterling Institute of Radiation Physics http://www.hzdr.de Positron Annihilation Spectroscopy - A non-destructive method for material testing - Maik Butterling Positron Annihilation Spectroscopy
More informationSingle ion implantation for nanoelectronics and the application to biological systems. Iwao Ohdomari Waseda University Tokyo, Japan
Single ion implantation for nanoelectronics and the application to biological systems Iwao Ohdomari Waseda University Tokyo, Japan Contents 1.History of single ion implantation (SII) 2.Novel applications
More informationPhysics 100 PIXE F06
Introduction: Ion Target Interaction Elastic Atomic Collisions Very low energies, typically below a few kev Surface composition and structure Ion Scattering spectrometry (ISS) Inelastic Atomic Collisions
More informationEE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors
EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification
More informationPhysics 111 Homework Solutions Week #9 - Friday
Physics 111 Homework Solutions Week #9 - Friday Tuesday, March 1, 2011 Chapter 24 Questions 246 The Compton shift in wavelength for the proton and the electron are given by Δλ p = h ( 1 cosφ) and Δλ e
More informationLight element IBA by Elastic Recoil Detection and Nuclear Reaction Analysis R. Heller
Text optional: Institute Prof. Dr. Hans Mousterian www.fzd.de Mitglied der Leibniz-Gemeinschaft Light element IBA by Elastic Recoil Detection and Nuclear Reaction Analysis R. Heller IBA Techniques slide
More informationCharacterization of Secondary Emission Materials for Micro-Channel Plates. S. Jokela, I. Veryovkin, A. Zinovev
Characterization of Secondary Emission Materials for Micro-Channel Plates S. Jokela, I. Veryovkin, A. Zinovev Secondary Electron Yield Testing Technique We have incorporated XPS, UPS, Ar-ion sputtering,
More informationInternational Journal of Scientific & Engineering Research, Volume 5, Issue 3, March-2014 ISSN
316 Effective atomic number of composite materials by Compton scattering - nondestructive evaluation method Kiran K U a, Ravindraswami K b, Eshwarappa K M a and Somashekarappa H M c* a Government Science
More informationPhysics 102: Lecture 23
Physics 102: Lecture 23 De Broglie Waves & Compton Scattering Place exam revisions in box at front of room either now or at end of lecture Physics 102: Lecture 23, Slide 1 Exam 3 Monday April 21! Material
More information