Contents. Zusammenfassung Abbreviations and Acronyms Notations for Precursor Molecules

Size: px

Start display at page:

Download "Contents. Zusammenfassung Abbreviations and Acronyms Notations for Precursor Molecules"

Myles Chapman
5 years ago
Views:

1 Contents Abstract Zusammenfassung Abbreviations and Acronyms Notations for Precursor Molecules xvi xviii xx xxi Chapter 1 Introduction General aspect of group-iii nitrides and their application Basics of semiconductors Direct band gap and indirect band gap semiconductors Gallium nitride Crystal structure of gallium nitride Substrates for gallium nitride Synthetic approaches for gallium nitride Gallium nitride using trimethyl gallium and ammonia Basics of CVD process General requirement of precursor for MOCVD/MOVPE Fundamental processes underlying CVD Nucleation and growth Thermodynamics, kinetics and mass transport phenomena Thermodynamics Chemical kinetics Mass transport phenomena CVD models A comment on atomic layer deposition of gallium nitride The scope of the present work References 26 Chapter 2 Synthesis of Intramolecularly Base Stabilized Dialkyl Gallium Amides and Their Use in GaN MOCVD Precursor chemistry of gallium nitride: Present understanding 29 x

2 2.1.1 Amide type nitrogen Hydrazido type nitrogen Azide type nitrogen Alternative nitrogen sources Preamble to synthesis of the reported compound Synthesis of ligand stabilized dialkyl gallium amides Thermal characteristics of precursor 1 and Deposition of GaN films using precursor 1 and Effect of ammonia on precursor 1 and 2 with N 2 as carrier gas Effect of ammonia on precursor 1 and 2 with H 2 as carrier gas RBS Measurements on GaN films Discussion Conclusions References 45 Chapter 3 Ligand Stabilized Dialkyl Aluminium Amide as New Precursor for Aluminium Nitride Thin Films Introduction Results Synthesis and NMR spectroscopy Thermal characteristic of the precursor AlN film deposition and characterization Single source characteristics Deposition with ammonia RBS of AlN films Discussion Conclusions References 63 Chapter 4 Evaluation of Cyclic Gallium Amides as Precursors for Gallium Nitride Thin Films Introduction Synthesis of new cyclic gallium amides 66 xi

3 4.3 Crystal structure of [MeGa(NR(CH 2 ) 2 NR)] Crystal structure of [EtN(CH 2 ) 2 NEtGa(CH 2 ) 3 NEt 2 ] Thermal characterization of 5 and Thermal characterization of MOCVD of [MeGa(NEt(CH 2 ) 2 NEt)] 2 for GaN Single source characteristics Deposition with ammonia Discussion Conclusions References 81 Chapter 5 MOCVD of Gallium Nitride nanostructures Using the Single Molecule Precursor Bisazidodiethylaminopropylgallium Introduction Applications of nanostructure Nanostructures of group-iii nitrides Aluminium nitride nanostructures Indium nitride nanostructures Gallium nitride nanostructures Direct reaction of gallium with ammonia Nanostructures from gallium, gallium nitride and ammonia Nanostructures from Ga 2 O or Ga 2 O 3 and ammonia Nanostructures from hydride/halide vapor phase epitaxy and sublimation Nanostructures from metalorganic precursors Nanostructures from other methods Nanostructure growth mechanisms SMPs as source for GaN nanostructures Crystal structure of Bisazido(diethylaminopropyl)gallium GaN nanostructure deposition conditions Self-organized gallium nitride nanopillars 95 xii

4 5.8.1 Photoluminescence of gallium nitride nanopillars Autocatalytic VLS mechanism for GaN nanopillars Preferentially ordered gallium nitride nanorods Randomly oriented gallium nitride nanowires XPS of GaN nanowires UV-VIS spectra of GaN nanowires Effect of substrate on GaN nanowire growth Effect of temperature on the GaN nanowire growth Effect of pressure on gallium nitride nanowire growth Possible growth mechanism of GaN nanowires and nanorods AFM study on GaN nanowires A comparison of nanostructure grown using BAZIGA and E-BAZIGA Conclusions References 119 Chapter 6 MOCVD Boundary Conditions in a Vertical Stagnation Flow Reactor for GaN Deposition from a Single Molecule Precursor - A Multiscale Simulation Study Introduction What is multiscale simulation/modeling of CVD? Classical CVD versus Simulation CVD Classical CVD Simulation CVD Definition of boundary conditions Measurement of boundary conditions in vertical reactor Mass flow of BAZIGA Temperature distribution in the vertical reactor Growth rate determination The new reactor setup Summary of the theoretical and CFD results Conclusions References 151 xiii

5 Chapter 7 Experimental Starting material General techniques in synthesis Solvent drying procedure Precursor characterization techniques Melting point Nuclear magnetic resonance spectroscopy Mass spectrometry Infrared spectroscopy Elemental analysis Atomic absorption spectroscopy Thermogravimetry and differential thermal analysis Single crystal X- ray structure analysis Precursor Synthesis Synthesis of Me 2 Ga[NEt(CH 2 ) 2 NMe 2 ] Synthesis of Et 2 Ga[NEt(CH 2 ) 2 NMe 2 ] Synthesis of MeClGa [NEt(CH 2 ) 2 NMe 2 ] Synthesis of Me 2 Al[NEtCH 2 )NMe 2 ] Synthesis of [MeN(CH 2 ) 2 NMeGaMe] Synthesis of [EtN(CH 2 ) 2 NEtGaMe] Synthesis of [EtN(CH 2 ) 2 NEtGa(CH 2 ) 3 NEt 2 ] Synthesis of BAZIGA and E-BAZIGA GaN and AlN thin film and GaN nanostructure deposition Description of vertical stagnation flow reactor Substrate preparation Deposition experiments Film and nanostructure characterization X- ray diffraction Ultra-violet visible spectroscopy X-ray photoelectron spectroscopy Scanning electron microscopy (SEM) and energy dispersive X-ray analysis 170 xiv

6 7.7.5 Transmission electron microscopy Rutherford backscattering spectroscopy Photoluminescence Nanostructure dispersion technique Determination of CVD boundary conditions for CFD simulations Determination of precursor mass flow New Evaporator system Determination of temperature boundary condition Determination of the growth rate and growth profile References 177 Chapter 8 Summary and Conclusions Precursor chemistry of group-iii nitrides GaN nanostructures CVD boundary conditions of a single molecule precursor for CFD 182 Chapter 9 Research publications and Presentations Publications Peer reviewed journals Reviewed conference proceedings Conference and workshop contributions Collaborative work 187 Curriculum vitae 188 xv

OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS. Jin Zhong Zhang. World Scientific TECHNISCHE INFORMATIONSBIBLIOTHEK

OPTICAL PROPERTIES AND SPECTROSCOPY OF NANOAAATERIALS Jin Zhong Zhang University of California, Santa Cruz, USA TECHNISCHE INFORMATIONSBIBLIOTHEK Y World Scientific NEW JERSEY. t'on.don SINGAPORE «'BEIJING