MJD18002D2T4G POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS
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1 MJD8D Bipolar NPN Traistor High Speed, High Gain Bipolar NPN Power Traistor with Integrated CollectorEmitter Diode and BuiltIn Efficient Antisaturation Network The MJD8D is a stateoftheart high speed, high gain bipolar traistor (HBIP). Tight dynamic characteristics and lot to lot minimum spread (±5 on storage time) make it ideally suitable for light ballast applicatio. Therefore, there is no longer a need to guarantee an h FE window. Features Low Base Drive Requirement High Peak DC Current Gain (55 I C = ma Extremely Low Storage Time Min/Max Guarantees Due to the HBIP Structure which Minimizes the Spread Integrated CollectorEmitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic V CEsat Characteristics Make It Suitable for PFC Application Epoxy Meets UL 9 in ESD Ratings: Human Body Model, B 8 V Machine Model, C V Six Sigma Process Providing Tight and Reproductible Parameter Spreads PbFree Package is Available MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Sustaining Voltage V CEO 5 Vdc CollectorBase Breakdown Voltage V CBO Vdc CollectorEmitter Breakdown Voltage V CES Vdc EmitterBase Voltage V EBO Vdc Collector Current Continuous I C. Adc Collector Current Peak (Note ) I CM 5. Base Current Continuous I B. Adc Base Current Peak (Note ) I BM. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Total Device Dissipation C = 5 C Derate above 5 C P D 5. W W/ C Operating and Storage Temperature Range T J, T stg 5 to +5 C Thermal Resistance, JunctiontoCase R JC 5. C/W Thermal Resistance, JunctiontoAmbient R JA 7. C/W Maximum Lead Temperature for Soldering Purposes: /8 from Case for 5 seconds T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditio is not implied. Extended exposure to stresses above the Recommended Operating Conditio may affect device reliability.. Pulse Test: Pulse Width = 5. ms, Duty Cycle = %. POWER TRANSISTOR AMPERES VOLTS, 5 WATTS DPAK CASE 9C STYLE MARKING DIAGRAM Y = Year WW = Work Week 8D = Device Code G = PbFree Package ORDERING INFORMATION Device Package Shipping MJD8DT DPAK /Tape & Reel MJD8DTG YWW 8 DG For information on tape and reel specificatio, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specificatio Brochure, BRD8/D. DPAK (PbFree) /Tape & Reel Semiconductor Components Industries, LLC, 9 March, 9 Rev. Publication Order Number: MJD8D/D
2 MJD8D ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Î Characteristic Î Symbol Min Typ Max Unit OFF CHARACTERISTICS Î CollectorEmitter Sustaining Voltage (I C = ma, L = 5 mh) Î V CEO(sus) 5 57 Vdc CollectorBase Breakdown Voltage (I Î CBO = ma) V Î CBO Vdc EmitterBase Breakdown Voltage (I EBO = ma) V EBO Vdc Collector Cutoff Current (V CE = Rated V CEO, I B = ) I CEO Adc Collector Cutoff Current (V ÎÎ CE = Rated V CES, V EB = ) C = 5 C I C = 5 C Î CES 5 Adc (V CE = 5 V, V EB = ) C = 5 C EmitterCutoff Current (V EB = Vdc, I C = ) I EBO 5 Adc ON CHARACTERISTICS BaseEmitter Saturation Voltage V ÎÎ (I C =. Adc, I B = madc) C = 5 C Î BE(sat) Vdc (I ÎÎ C =. Adc, I B =. Adc) C = 5 C ÎÎ CollectorEmitter Saturation Voltage (I C =. Adc, I B C = 5 C Î V CE(sat) = madc) C = 5 C Î.. Vdc.5. Î (I ÎÎ C =. Adc, I B =. Adc) C = 5 C C = 5 C ÎÎ DC Current Gain C = 5 C Î h FE ÎÎ (I C =. Adc, V CE =. Vdc) C = 5 C ÎÎ (I C =. Adc, V CE =. Vdc) C = 5 C. Î C = 5 C. ÎÎ. DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I C =.5 Adc, V CE = Vdc, f = MHz) f t MHz Output Capacitance (V CB = Vdc, I E =, f = MHz) C ob 5 pf ÎÎ Input Capacitance (V EB = 8 Vdc) C ib 5 pf DIODE CHARACTERISTICS Î Forward Diode Voltage V EC Vdc ÎÎ (I EC =. Adc) C = 5 C..5 ÎÎ (I Î ÎÎ EC =. Adc) C = 5 C.. C = 5 C. ÎÎ Forward Recovery Time (I F =. Adc, di/dt = A/ s) C Î t fr = 5 C 57 ÎÎ Î (I F =. Adc, di/dt = A/ s) C = 5 C 8 DYNAMIC SATURATION VOLTAGE I C ÎÎ Dynamic Saturation Voltage ÎÎ =. s C Î = 5 C V CE(dsat) 7. V I B = ma Determinated s and s V ÎÎ Î CC = s C = 5 C.5 respectively after rising I B Î Î reaches ÎÎ I 9% of final I B ÎÎ C = s C = 5 C I B =. A s C = 5 C. V CC = Vdc
3 MJD8D ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. %, Pulse Width = s) Turnon Time ÎÎ C = 5 C Î t on I C =. Adc, I B = madc I B C = 5 C = madc Turnoff Time V CC = Vdc C = 5 C Î t off C.8. s = 5 C.5 ÎÎ Turnon Time C Î = 5 C t on I C =. Adc, I B =. Adc C = 5 C 9 5 I B =.5 Adc Turnoff Time V CC = Vdc C = 5 C Î t off.95.5 s C = 5 C.5 SWITCHING CHARACTERISTICS: Inductive Load (V clamp = V, V CC = 5 V, L = H) ÎÎ Fall Time C Î = 5 C t f ÎÎ C = 5 C 75 I C =. Adc Storage Time I B = madc C = 5 C Î t s..7 s I B =. Adc C = 5 C.7 ÎÎ Crossover Time ÎÎ C = 5 C t C = 5 C Î c 75 Fall Time ÎÎ C = 5 C Î t f 75 C = 5 C I C ÎÎ Storage Time =.8 Adc I B = madc C = 5 C t I B = madc C = 5 C Î s... s Crossover Time C = 5 C Î t c ÎÎ C = 5 C Fall Time ÎÎ C = 5 C Î t f C 5 = 5 C I C =. Adc Storage Time I B =. Adc C Î = 5 C t s I B =.5 Adc C = 5 C.5.5. s Crossover Time ÎÎ C = 5 C Î t c 5 5 C = 5 C
4 MJD8D TYPICAL STATIC CHARACTERISTICS V CE = V V CE = 5 V h FE, DC CURRENT GAIN 8 5 C C h FE, DC CURRENT GAIN 8 5 C C Figure. DC Current V Figure. DC Current 5 V I C /I B = V CE, VOLTAGE (VOLTS) A ma A.5 A V CE, VOLTAGE (VOLTS) 5 C I C = ma... I B, BASE CURRENT (AMPS) C.... Figure. Collector Saturation Region Figure. CollectorEmitter Saturation Voltage I C /I B = V CE, VOLTAGE (VOLTS) 5 C V CE, VOLTAGE (VOLTS) 5 C. C.... C... Figure 5. CollectorEmitter Saturation Voltage Figure. CollectorEmitter Saturation Voltage
5 MJD8D TYPICAL STATIC CHARACTERISTICS I C /I B = V BE, VOLTAGE (VOLTS) C 5 C V BE, VOLTAGE (VOLTS) C 5 C Figure 7. BaseEmitter Saturation Region Figure 8. BaseEmitter Saturation Region I C /I B = V BE, VOLTAGE (VOLTS).. I C /I B = C 5 C.. FORWARD DIODE VOLTAGE (VOLTS). V EC(V) = C 5 C 5 C.. REVERSE EMITTERCOLLECTOR CURRENT (AMPS) Figure 9. BaseEmitter Saturation Region I C /I B = Figure. Forward Diode Voltage TYPICAL SWITCHING CHARACTERISTICS C, CAPACITANCE (pf) C ib (pf) f(test) = MHz V R, REVERSE VOLTAGE (VOLTS) C ob (pf) I Bon = I Boff V CC = V PW = s. I C /I B =.7.. Figure. Capacitance Figure. Resistive Switch Time, t on 5
6 MJD8D TYPICAL SWITCHING CHARACTERISTICS I C /I B = I Bon = I Boff V CC = V PW = s.5.5 V CC = 5 V, V Z = V L C = H Figure. Resistive Switch Time, t off Figure. Inductive Storage Time, t 7 5 V CC = 5 V, V Z = V L C = H I C /I Bon = 5 t c I C = A V CC = 5 V, V Z = V L C = H t fi I C = ma h FE, FORCED GAIN Figure 5. Inductive Switching, t c & t Figure. Inductive Storage Time t fi, FALL TIME () 8 V CC = 5 V, V Z = V L C = H I C = A 8 V CC = 5 V, V Z = V L C = H I C = A I C =. A 5 I C =. A h FE, FORCED GAIN h FE, FORCED GAIN Figure 7. Inductive Fall Time Figure 8. Inductive CrossOver Time
7 MJD8D TYPICAL SWITCHING CHARACTERISTICS. V CC = 5 V, V Z = V L C = H. 8 t c t fi.5..5 I Boff = I C /, V CC = 5 V, V Z = V L C = H I C /I B =.5 Figure 9. Inductive Switching Time, t fi & T G = Figure. Inductive Switching Time, t si 5 I Boff = I C /, V CC = 5 V, V Z = V L C = H 5 5 I Boff = I C /, V CC = 5 V, V Z = V L C = H I C /I B = I C /I B = Figure. Inductive Storage Time, t fi Figure. Inductive Storage Time, t c CROSSOVER TIME () V CC = 5 V, V Z = V L C = H I B = ma I B = 5 ma I B = 5 ma I B = ma I C V clamp I B t si % V clamp 9% I B t c t fi 9% I C % I C..8. h FE, FORCED GAIN. TIME Figure. Inductive Storage Time, t si Figure. Inductive Switching Measurements 7
8 MJD8D Figure 5. Inductive Load Switching Drive Circuit +5 V F 5 W W MTP8P F V CE PEAK I C PEAK + V MPF9 MPF9 MUR5 MTP8P R B I out V CE I B I B A COMMON -V off 5 5 F 5 W MJE MTPN R B F V (BR)CEO(sus) L = mh R B = V CC = Volts I C(pk) = ma I B Inductive Switching L = H R B = V CC = 5 Volts R B selected for desired I B RBSOA L = 5 H R B = V CC = 5 Volts R B selected for desired I B V F 8 I F % I F V FRM. V F tfr V FR (. V F ) Unless Otherwise Specified V F 8 Figure. t fr Measurement.. s s DC 5 ms ms 5 s EXTENDED SOA V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area V BE = V T C = 5 C Gain = L C = 5 H V BE(off) =.5 V V BE(off) = 5 V 8 POWER DERATING FACTOR.8... Second Breakdown Derating Thermal Derating 8 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) T C, CASE TEMPERATURE ( C) Figure 8. Reverse Bias Safe Operating Area Figure 9. Forward Bias Power Derating 8
9 MJD8D There are two limitatio on the power handling ability of a traistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the traistor that must be observed for reliable operation; i.e., the traistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on T C = 5 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when T C > 5 C. Second Breakdown limitatio do not derate the same as thermal limitatio. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. T J(pk) may be calculated from the data in Figure. At any case temperatures, thermal limitatio will reduce the power that can be handled to values less than the limitatio imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turnoff with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 8). This rating is verified under clamped conditio so that the device is never subjected to an avalanche mode..5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE P (pk) t t DUTY CYCLE, D = t /t R JC(t) = r(t) R JC R JC = 55 /W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) R JC (t)... t, TIME (ms) Figure. Typical Thermal Respoe (Z JC (t)) for MJD8D B VCER ma di/dt = A/ s T C = 5 C B ma, R BE (),.5.5 I F, FORWARD CURRENT (AMPS) Figure. B VCER Figure. Forward Recovery Time, t fr 9
10 MJD8D PACKAGE DIMENSIONS DPAK CASE 9C ISSUE B B C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. V S F R G L A K D PL J H. (.5) M T E U SOLDERING FOOTPRINT* Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.8 BSC.58 BSC H J K L.9 BSC.9 BSC R S.5... U..5 V Z.55.9 STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Six Sigma is a registered trademark and servicemark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any licee under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5, Denver, Colorado 87 USA Phone: 7575 or 88 Toll Free USA/Canada Fax: 757 or 887 Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MJD8D/D
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