BUH150. SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS, 150 WATTS
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1 BUH SWTCHMODE NPN Silicon Planar Power Traistor The BUH has an application specific state of art die designed for use in Watts Halogen electronic traformers. This power traistor is specifically designed to sustain the large inrush current during either the startup conditio or under a short circuit across the load. Features mproved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain h FE Fast Switching Robustness Thanks to the Technology Developed to Manufacture this Device ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributio Pb Free Package is Available* MAXMUM RATNGS Rating Symbol Value Unit Collector Emitter Sustaining Voltage V CEO Vdc Collector Base Breakdown Voltage V CBO Vdc Collector Emitter Breakdown Voltage V CES Vdc Emitter Base Voltage V EBO Vdc Collector Current Continuous Peak (Note ) C CM Adc POWER TRANSSTOR AMPERES VOLTS, WATTS TO AB CASE A 9 STYLE MARKNG DAGRAM Base Current Continuous Peak (Note ) B BM Adc Total Device Dissipation C = C Derate above C P D. W W/ C Operating and Storage Temperature T J, T stg to C THERMAL CHARACTERSTCS Characteristics Symbol Max Unit Thermal Resistance, Junction to Case R JC. C/W Thermal Resistance, Junction to Ambient R JA. C/W Maximum Lead Temperature for Soldering Purposes / from Case for Seconds T L C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditio) and are not valid simultaneously. f these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Pulse Test: Pulse Width = ms, Duty Cycle %. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BUHG AY WW BUH = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb Free Package ORDERNG NFORMATON Device Package Shipping BUH TO Units / Rail BUHG TO (Pb Free) Units / Rail Semiconductor Components ndustries, LLC, February, Rev. Publication Order Number: BUH/D
2 BUH ELECTRCAL CHARACTERSTCS (T C = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Î OFF CHARACTERSTCS Collector Emitter Sustaining Voltage V CEO(sus) Vdc ( C = ma, L = mh) Î Collector Base Breakdown Voltage V ( CBO = ma) CBO Vdc Emitter Base Breakdown Voltage V EBO. ( EBO = ma) Vdc Collector Cutoff Current CEO Î Adc (V CE = Rated V CEO, B = ) Collector Cutoff Current Î (V CE = Rated V CES, V EB = ) C = C C = C CES Adc Î Collector Base Current C = C CBO Î Adc (V Î CB = Rated V CBO, V EB = ) C = C Emitter Cutoff Current (V EB = 9 Vdc, C EBO = ) Î Adc Î ON CHARACTERSTCS Base Emitter Saturation Voltage V BE(sat) Î ( C = Adc, B = Adc). Vdc Î Collector Emitter Saturation Voltage C = C V CE(sat).. Vdc ( C = Adc, B =. Adc) C = C.. Î ( C = Adc, B = Adc) C = C. Vdc Î ( C = Adc, B = Adc) C = C Vdc Î DC Current Gain ( Î C = Adc, V CE = Vdc) C = C h C = C FE.. Î ( C = Adc, V CE = Vdc) C = C C = C Î ( C = Adc, V CE = Vdc) C = C C = C Î ( C = madc, V CE = Vdc) C = C Î DYNAMC SATURATON VOLTAGE Dynamic Saturation C = Adc, B = Adc C = C V CE(dsat). V Voltage: V CC = V C = C Î. V Determined s after rising B reaches 9% of C = Adc, B = Adc C = C. V final B (see Figure 9) V CC = V C = C Î V Î DYNAMC CHARACTERSTCS Current Gain Bandwidth f T MHz ( C = Adc, V CE = Vdc, f = MHz) Î Output Capacitance C (V CB = Vdc, E =, f = MHz) ob pf nput Capacitance C ib (V EB = Vdc, f = MHz) pf
3 BUH ELECTRCAL CHARACTERSTCS (T C = C unless otherwise noted) Î Characteristic Symbol Min Typ Max Unit Î SWTCHNG CHARACTERSTCS: Resistive Load (D.C. %, Pulse Width = s) Turn on Time Î C = C t on Storage Time C = Adc, B =. Adc C = C t s.. s B =. Adc V CC = Vdc C = C t f Turn off Time Î C = C t off. s Turn on Time Î C = C t on Storage Time C = Adc, B =. Adc C = C t s.. s B =. Adc V CC = Vdc C = C t f Turn off Time Î C = C t off. s Turn on Time Î C = C t on C = Adc, B =. Adc B C = C =. Adc Turn off Time V CC = Vdc C = C t off. s C = C.9 Turn on Time C = Adc, B = Adc C = C t C = C on 9 B = Adc Turn off Time V CC = Vdc C = C t off.. Î C = C. s SWTCHNG CHARACTERSTCS: nductive Load (V clamp = V, V CC = V, L = H) ÎÎ Î C = C t C = C fi Storage Time C = Adc B =. Adc C = C t si Î B =. Adc C = C. s Crossover Time Î C = C t c C = C Î C = C t C = C fi Storage Time C = Adc B =. Adc C = C t si Î B =. Adc C = C.. s Crossover Time Î C = C t c C = C Î C = C t fi Î C = C C = Adc Storage Time B =. Adc C = C t si.. s B =. Adc C = C. Crossover Time Î C = C t C = C c Î C = C t fi Î C = C C = Adc Storage Time B = Adc C = C t si.. B = Adc C = C. s Crossover Time Î C = C t C = C c
4 BUH TYPCAL STATC CHARACTERSTCS V CE = V V CE = V h FE, DC CURRENT GAN T J = C h FE, DC CURRENT GAN T J = C Figure. DC Current Volt Figure. DC Current Volt hfe, DC CURRENT GAN T J = C V CE = V VCE, VOLTAGE (VOLTS). C / B = T J = C Figure. DC Current Volt Figure. Collector Emitter Saturation Voltage. C / B = C / B = VCE, VOLTAGE (VOLTS). VBE, VOLTAGE (VOLTS). T J = C Figure. Collector Emitter Saturation Voltage Figure. Base Emitter Saturation Region
5 BUH TYPCAL STATC CHARACTERSTCS. C / B = VBE, VOLTAGE (VOLTS).. T J = C V CE, VOLTAGE (VOLTS).... B, BASE CURRENT (A).. V CE(sat) ( C = A) A A A A A Figure. Base Emitter Saturation Region Figure. Collector Saturation Region 9 C ib (pf) f (test) = MHz ma C, CAPACTANCE (pf) C ob (pf) BVCER (VOLTS) ma V R, REVERSE VOLTAGE (VOLTS) R BE ( ) Figure 9. Capacitance Figure. Resistive Breakdown
6 BUH TYPCAL SWTCHNG CHARACTERSTCS t, TME () B = B V CC = V PW = s C C / B = C C t, TME ( s) μ C / B = B = B V CC = V PW = s C C / B = C / B = 9 Figure. Resistive Switching, t on Figure. Resistive Switch Time, t off t, TME ( s) μ C / B = B = B V CC = V V Z = V L C = H t, TME ( s) μ C / B = B = B V CC = V V Z = V L C = H 9 Figure. nductive Storage Time, t si Figure Bis. nductive Storage Time, t si t, TME () B = B V CC = V V Z = V L C = H t c t fi t, TME () B = B V CC = V V Z = V L C = H T C = C T C = C t c t fi 9 Figure. nductive Storage Time, t c & t C / B = Figure. nductive Storage Time, t c & t C / B =
7 BUH TYPCAL SWTCHNG CHARACTERSTCS tsi, STORAGE TME ( μs) B = B V CC = V V Z = V L C = H C = A C = A t fi, FALL TME () C = A C = A Boff = B V CC = V V Z = V L C = H 9 h FE, FORCED GAN h FE, FORCED GAN Figure. nductive Storage Time Figure. nductive t c, CROSSOVER TME () B = B V CC = V V Z = V L C = H C = A C = A 9 h FE, FORCED GAN Figure. nductive Crossover Time
8 BUH TYPCAL SWTCHNG CHARACTERSTCS V CE dyn s dyn s 9 C t si 9% C t fi V V clamp % V clamp t c % C 9% B B 9% B s B s TME TME Figure 9. Dynamic Saturation Voltage Measurements Figure. nductive Switching Measurements Table. nductive Load Switching Drive Circuit + V F W W MTPP F V CE PEAK C PEAK + V COMMON V off MPF9 MPF9 F W MTPP MUR MJE MTPN R B out A R B F V CE B B V (BR)CEO(sus) L = mh R B = V CC = Volts C(pk) = ma B nductive Switching L = H R B = V CC = Volts R B selected for desired B RBSOA L = H R B = V CC = Volts R B selected for desired B
9 BUH POWER DERATNG FACTOR.... TYPCAL THERMAL RESPONSE THERMAL DERATNG SECOND BREAKDOWN DERATNG T C, CASE TEMPERATURE ( C) Figure. Forward Bias Power Derating There are two limitatio on the power handling ability of a traistor: average junction temperature and second breakdown. Safe operating area curves indicate C V CE limits of the traistor that must be observed for reliable operation; i.e., the traistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T C = C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when T C > C. Second breakdown limitatio do not derate the same as thermal limitatio. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure. T J(pk) may be calculated from the data in Figure. At any case temperatures, thermal limitatio will reduce the power that can be handled to values less than the limitatio imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure ). This rating is verified under clamped conditio so that the device is never subjected to an avalanche mode.. DC ms s ms s EXTENDED SOA GAN V V. V T C C L C = mh. V CE, COLLECTOR EMTTER VOLTAGE (VOLTS) Figure. Forward Bias Safe Operating Area V CE, COLLECTOR EMTTER VOLTAGE (VOLTS) Figure. Reverse Bias Safe Operating Area r(t), TRANSENT THERMAL RESSTANCE (NORMALZED) SNGLE PULSE P (pk) t t DUTY CYCLE, D = t /t R JC (t) = r(t) R JC R JC =. C/W MAX D CURVES APPLY FOR POWER PULSE TRAN SHOWN READ TME AT t T J(pk) T C = P (pk) R JC (t). t, TME (ms) Figure. Typical Thermal Respoe (Z JC (t)) for BUH 9
10 BUH PACKAGE DMENSONS TO AB CASE A 9 SSUE AA H Q Z L V G B N D A K F T U S R J C T SEATNG PLANE NOTES:. DMENSONNG AND TOLERANCNG PER ANS Y.M, 9.. CONTROLLNG DMENSON: NCH.. DMENSON Z DEFNES A ZONE WHERE ALL BODY AND LEAD RREGULARTES ARE ALLOWED. NCHES MLLMETERS DM MN MAX MN MAX A.... B C..9.. D.... F.... G.9... H....9 J.... K.... L.... N.9... Q.... R....9 S....9 T...9. U.... V.. Z.. STYLE : PN. BASE. COLLECTOR. EMTTER. COLLECTOR SWTCHMODE is a trademark of Semiconductor Components ndustries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components ndustries, LLC (SCLLC). SCLLC reserves the right to make changes without further notice to any products herein. SCLLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCLLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCLLC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCLLC does not convey any licee under its patent rights nor the rights of others. SCLLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCLLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCLLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCLLC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCLLC was negligent regarding the design or manufacture of the part. SCLLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLCATON ORDERNG NFORMATON LTERATURE FULFLLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Phoenix, Arizona USA Phone: 9 or Toll Free USA/Canada Fax: 9 9 or Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: 9 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. BUH/D
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