Physics of the thermal behavior of photovoltaic cells
|
|
- Dinah Lambert
- 6 years ago
- Views:
Transcription
1 Physics of the thermal behavior of photovoltaic cells O. Dupré *,2, Ph.D. candidate R. Vaillon, M. Green 2, advisors Université de Lyon, CNRS, INSA-Lyon, UCBL, CETHIL, UMR58, F-6962 Villeurbanne, France 2 Australian Centre for Advanced Photovoltaics, University of New South Wales, Sydney, 252, Australia * olivier.dupre@insa-lyon.fr, UNSW June 24, Sydney
2 Virtuani et al, 2 Introduction η PV T c P max b -.45%/K (for c-si)? Why are photovoltaic devices negatively affected by temperature? What are the parameters involved? T c Fundamental losses in PV conversion Detailed balance principle (Shockley Queisser limit) Energy/Entropy balance (Thermodynamic limit) Dependences of these losses on temperature Additional losses in real PV cells External Radiative Efficiency Intrinsic temperature coefficient of silicon cells A thermal engineering view on PV performances 2
3 Detailed balance principle Condition for an equilibrium: ground state excited state = excited state ground state E c E g μ E fc Generation Recombination Load Current E fv E v 3
4 T s Detailed balance principle T a Condition for an equilibrium: ground state excited state = excited state ground state Ω abs Ω emit T c Shockley & Queisser assumptions: () photon excites only electron (2) All recombinations are radiative, i.e. generate a photon E g E c E v μ E fc () Absorption E fv P elec Emission (2) q( Nabs Nemit ) V Load Current = q (Photons absorbed Photons emitted) Generalized Planck s equation photon fluxes N ( E, T,, ) g 2 c h 2 3 E (3) μ is the chemical potential of the radiation (4) for the luminescent radiation from the cell: μ = qv (3) Single gap: absorbs every photons with E E g and none with E<E g (4) Assuming perfect charge transport 4 g E 2 E kt e de
5 Energy/Entropy balance + T s Thermodynamics enables to evaluate the theoretical limits of energy conversion processes S s + E s S c + E c T c Different energy forms do not contain the same amount of free energy (or exergy: energy that can be extracted to produce work) because they contain different amount of entropy Q /T c Q /T a + Q + S gen T a W Gibbs free energy We consider here the gas of excited electron-hole pairs : F N T S c E Electrochemical energy Number of e-h pairs Internal energy Entropy pv disordered energy ultimately converted into heat 5
6 (E s -μ N s )/T c Q /T c Q E s T c (E c -μ N c )/T c + S gen Energy/Entropy balance Irreversible thermodynamics entropy fluxes W... E N S T W E s E c Q Q E s N s E c N c S T T T c c c W ( N s N c) S T gen () photon creates excites only electron (2) All recombinations are radiative (3) Single gap: absorbs every photons with E E g and none with E<E g (4) Assuming perfect charge transport c gen T c Sgen and qv W q( NsNc) V 6
7 Analytical solution P E elec P elec q( Nabs Nemit ) V () f ( Eg, Ts, abs ) f ( Eg, Tc, V, emit ) (2) g P V elec V E g P max. N ( E, T,, ) 2 c h Boltzmann approximation g analytical solution of () Tc emit qvopt Eg ( ) ktc ln( ) T s Carnot efficiency abs 2 3 E Angle mismatch loss g E 2 E kt e de : relates the optimal operating voltage and E g (*) (*) only correct when E g =E g (max) but stays a good approximation for any E g P max.. J V q( Nabs Nemit ( V ))( E Carnot Angle mismatch ) opt opt opt g loss loss Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) 7
8 Fraction of the incident solar energy Losses = f(eg) Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) E g (ev) Similarly to an heat engine, the work that can be extracted is ultimately limited by the temperature difference between the sun and the cell The radiation emitted by cell is lost + + A standard PV cell emits in more directions than it absorbs light coming directly from the sun + A single gap absorber can not efficiently use the broad solar spectrum = Shockley Queisser limit (numerical) Photons with insufficient energies Photons too energetic 8
9 Fraction of the incident solar energy 3 rd gen PV > Shockley-Queisser limit Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) Hot carriers, Down conversion / Multiple Excitons Generation Solar TPV, Thermophotonics Multi-junctions, Spectral splitting Impurity PV, Up conversion E g (ev) Concentration, Limited angle emission Shockley Queisser limit 9
10 Fraction of the incident solar energy 3 rd gen PV > Shockley-Queisser limit Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) Hot carriers, Down conversion / Multiple Excitons Generation Solar TPV, Thermophotonics Multi-junctions, Spectral splitting Impurity PV, Up conversion E g (ev) E g (Si at 3K).2 ev Concentration, Limited angle emission Shockley Queisser limit
11 Band diagram of an ideal Si cell at MPP Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission)
12 Current density (A.m -2 ) / Cumulated photon flux density *q (s -.m -2 ) IV curve of an ideal Silicon cell Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) 23% MPP % 3% IV curve 2% % 33% Photon energy (ev) / Cell voltage (V) 2
13 Virtuani et al, 2 Overview η PV T c P max b -.45%/K (for c-si)? Why are photovoltaic devices negatively affected by temperature? What are the parameters involved? T c Fundamental losses in PV conversion Detailed balance principle (Shockley Queisser limit) Energy/Entropy balance (Thermodynamic limit) Dependences of these losses on temperature Additional losses in real PV cells External Radiative Efficiency Intrinsic temperature coefficient of silicon cells A thermal engineering view on PV performances 3
14 Fraction of the incident solar energy Some losses = f(t c ) G(T) - G(3K) Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) T c T c T c T c = 3K T c = 45K The emission rate increases with T c so the angle mismatch loss increases as well. Also, ΔT=T sun -T cell decreases with T c so the Carnot loss increases E g (ev) E g (Si)=.2 ev Temperature (K) 4
15 Fraction of the incident solar energy Temperature coefficient b βη_35k (ppm) Ratio Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) E g (ev) Reducing certain losses also improves b b T c T T c T c T c b : temperature coefficient P max T 298.5K 298.5K T Carnot + Angle mismatch + Emission b f( ) f ( E g ) Output power E g (ev)
16 Fraction of the incident solar energy βη_35k (ppm) Temperature coefficient = f(concentration) Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) C C= () abs ( sun) abs C max C=C max 462 emit ( sun) abs - -2 Angle mismatch b f( Angle mismatch / Concent ration) (2) ( ) abs abs sun C emit emit C= Cmax E g (ev) Minimizing the angle mismatch: () Improves P max (2) AND improves E g (ev) b 6
17 Virtuani et al, 2 Overview η PV T c P max b -.45%/K (for c-si)? Why are photovoltaic devices negatively affected by temperature? What are the parameters involved? T c Fundamental losses in PV conversion Detailed balance principle (Shockley Queisser limit) Energy/Entropy balance (Thermodynamic limit) Dependences of these losses on temperature Additional losses in real PV cells External Radiative Efficiency Intrinsic temperature coefficient of silicon cells A thermal engineering view on PV performances 7
18 βη_35k (ppm) Additional losses in real devices b fe ( g ) - -2 CdTe? -3 CIGS -4 Si E g (ev) analytical numerical experimental measurements Virtuani et al, 2? Why do real PV devices have worse b than predicted before? 8
19 Additional losses in real devices 9
20 Current density (A.m -2 ) / Cumulated photon flux density *q (s -.m -2 ) IV curve of a commercial Silicon cell Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission + Non radiative recombination + Series + Shunt) Realistic IV curve Losses due to non radiative recombinations = Ideal IV curve - - Loss due to shunts - Loss due to series resistance Photon energy (ev) / Cell voltage (V) 2
21 External Radiative Efficiency: ERE J( V) J J ( V) light rec _ dark J q( Nabs Nemit ) ERE (superposition principle) photon emission Nemit q rec _ dark similar to EQE of a LED: how many electrons need to be excited to emit one photon? ERE Rrad total dark current recombination J different from IRE Using Boltzmann approximation analytical solution: Green, 22 R tot because of photon recycling Tc emit qvmpp Eg ( ) ktc ln( ) ktc ln( ) T ERE s abs MPP Carnot efficiency Angle mismatch loss Non radiative recombination loss Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission + Non radiative recombination) 2
22 Fraction of the incident solar energy βη_35k (ppm) Commercial Si cell V oc =58 mv ERE MPP = -5 Temperature coefficient = f(ere) State of the art Si cell V oc =7 mv ERE MPP = b ( ) f ERE MPP (2) ERE: () -4 Si E g (ev) Minimizing the non radiative losses: () Improves P max (2) AND improves b E g (ev) Green et al, 982 As the open-circuit voltage of silicon solar cells continues to improve, one resulting advantage, not widely appreciated, is reduced temperature sensitivity of device performance 22
23 Temperature coefficient = f(t c ) ηmax βη_35k (ppm) b ( ) f ERE MPP BUT Radiative and non radiative recombination mechanisms have different temperature and voltage dependences (and V MPP =f(t c )) ERE MPP f ( T ) c b ( ) ft c.25-3 Example: SRH recombination theory using 2 different trap energies E t : E c -E t =.26 E c -E t = Tc (K) ALSO Series and shunt losses = f(t c ) impact on b? 23
24 Maximum efficiency Bandgap = f(t c ), influence of the spectrum.35 Si InP GaAs CdTe AM.5 spectrum.3 CsSnI3 T c.25 Ge E T g c 278K 298K.2 38K 338K.5 CdS 358K E g (ev) Eg b f ( Eg,, incident spectrum) T c Perovskite compound (CsSnI3) Eg interesting ( Eg, ) T c 24
25 βη_45ºc (ppm) Bandgap = f(t c ), influence of the spectrum AM.5 spectrum -84 GaAs CsSnI3 CdTe Si InP -529 CdS deg/dt (GaAs) =-.52 mev/k deg/dt (CsSnI3) =+.36 mev/k deg/dt = -4 Ge E g at 25ºC (ev) Eg b f ( Eg,, incident spectrum) T c Perovskite compound (CsSnI3) Eg interesting ( Eg, ) T c 25
26 Intrinsic b of silicon cells Using the state-of-the-art parameters* and considering carefully their temperature dependences, we derived the temperature coefficient of the limiting efficiency of crystalline silicon solar cells (SQ limit with AM.5) η(298.5k) = 29.6% < 33.4% Intrinsic b of crystalline silicon cells = -238 ppm/k < -582 ppm/k This is obviously not a minimum but as silicon cells improve towards their limiting efficiencies, their temperature sensitivity is expected to converge toward this value Differences with the SQ assumptions: Auger recombination Realistic absorbance of silicon with Free Carrier Absorption and assuming a Lambertian light trapping scheme bb() E Abb() E bb( E) FCA( E) 2 4nW r * Richter et al, 23 26
27 Virtuani et al, 2 Overview η PV T c P max b -.45%/K (for c-si)? Why are photovoltaic devices negatively affected by temperature? What are the parameters involved? T c Fundamental losses in PV conversion Detailed balance principle (Shockley Queisser limit) Energy/Entropy balance (Thermodynamic limit) Dependences of these losses on temperature Additional losses in real PV cells External Radiative Efficiency Intrinsic temperature coefficient of silicon cells A thermal engineering view on PV performances 27
28 Fraction of the incident solar energy ηmax (%) Tc (K) A thermal engineering view on PV performances ERE MPP = Si CdTe 5 η(3k) BIPV 48 η(tc) with h = W.m -2.K ideal cell E g (ev) Eg (ev) 28
29 Fraction of the incident solar energy ηmax (%) Tc (K) A thermal engineering view on PV performances.9.8 ERE MPP = Si CdTe BIPV 5 η(3k) 48 η(tc) with h = W.m -2.K ideal cell commercial cell E g (ev) Eg (ev) 29
30 Conclusions and future work Reducing Angle mismatch or Non Radiative losses improves efficiencies AND temperature coefficients of PV cells At one sun, b is principally a function of the cell bandgap (Eg) and quality (ERE) b ERE Eg contact loss shunt loss f ( Eg, EREC,,,,incident spectrum,,...) T T T T c c c c Investigate the impact of these parameters to be able to predict b of different technologies Intrinsic b of crystalline silicon cells = -238 ppm/k Assess different PV strategies (TPV, BIPV, CPV, multi-junctions,...) with this thermal approach 3
31 Thank you for your attention 3
32 Fraction of the incident solar energy Temperature coefficient of multi-junctions Output power = Input power Losses (BelowEg + Thermalization + Carnot + Angle mismatch + Emission) Carnot + Angle mismatch + Emission Output power b cst 26 ppm/k.3.2 Q cst T c cst Number of junctions 32
Thermal Behavior of Photovoltaic Devices
Thermal Behavior of Photovoltaic Devices Olivier Dupré Rodolphe Vaillon Martin A. Green Thermal Behavior of Photovoltaic Devices Physics and Engineering 123 Olivier Dupré Centre for Energy and Thermal
More informationEE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 23, 2014 Lecture 07
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Tuesday, September 23, 2014 Lecture 07 1 Introduction to Solar Cells Topics to be covered: Solar cells and sun light Review on semiconductor
More informationElectrons are shared in covalent bonds between atoms of Si. A bound electron has the lowest energy state.
Photovoltaics Basic Steps the generation of light-generated carriers; the collection of the light-generated carriers to generate a current; the generation of a large voltage across the solar cell; and
More informationSolar cells operation
Solar cells operation photovoltaic effect light and dark V characteristics effect of intensity effect of temperature efficiency efficency losses reflection recombination carrier collection and quantum
More informationPhotovoltaic Energy Conversion. Frank Zimmermann
Photovoltaic Energy Conversion Frank Zimmermann Solar Electricity Generation Consumes no fuel No pollution No greenhouse gases No moving parts, little or no maintenance Sunlight is plentiful & inexhaustible
More informationPHOTOVOLTAICS Fundamentals
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationThe Opto-Electronic Physics That Just Broke the Efficiency Record in Solar Cells
The Opto-Electronic Physics That Just Broke the Efficiency Record in Solar Cells Solar Energy Mini-Series Jen-Hsun Huang Engineering Center Stanford, California Sept. 26, 2011 Owen D. Miller & Eli Yablonovitch
More informationThe Opto-Electronic Physics Which Just Broke the Efficiency Record in Solar Cells. Green Photonics Symposium at Technion Haifa, Israel, April 23, 2014
The Opto-Electronic Physics Which Just Broke the Efficiency Record in Solar Cells Green Photonics Symposium at Technion Haifa, Israel, April 23, 2014 Eli Yablonovitch UC Berkeley Electrical Engineering
More informationPhoton Extraction: the key physics for approaching solar cell efficiency limits
Photon Extraction: the key physics for approaching solar cell efficiency limits Owen Miller*: Post-doc, MIT Math Eli Yablonovitch: UC Berkeley, LBNL Slides/Codes/Relevant Papers: math.mit.edu/~odmiller/publications
More informationThird generation solar cells - How to use all the pretty colours?
Third generation solar cells - How to use all the pretty colours? Erik Stensrud Marstein Department for Solar Energy Overview The trouble with conventional solar cells Third generation solar cell concepts
More informationET3034TUx Utilization of band gap energy
ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.
More informationThe Shockley-Queisser Limit. Jake Friedlein 7 Dec. 2012
The Shockley-Queisser Limit Jake Friedlein 7 Dec. 2012 1 Outline A. Loss factors 1. Bandgap energy 2. Geometric factor 3. Recombination of electrons and holes B. Overall efficiency C. Optimum bandgap 2
More information3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV
3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the
More informationBasic Limitations to Third generation PV performance
Basic Limitations to Third generation PV performance Pabitra K. Nayak Weizmann Institute of Science, Rehovot, Israel THANKS to my COLLEAGUES Lee Barnea and David Cahen. Weizmann Institute of Science Juan
More informationLecture 2. Photon in, Electron out: Basic Principle of PV
Lecture 2 Photon in, Electron out: Basic Principle of PV References: 1. Physics of Solar Cells. Jenny Nelson. Imperial College Press, 2003. 2. Third Generation Photovoltaics: Advanced Solar Energy Conversion.
More informationComparison of Ge, InGaAs p-n junction solar cell
ournal of Physics: Conference Series PAPER OPEN ACCESS Comparison of Ge, InGaAs p-n junction solar cell To cite this article: M. Korun and T. S. Navruz 16. Phys.: Conf. Ser. 77 135 View the article online
More informationHow Solar Cells Work. Basic theory of photovoltaic energy conversion. Peter Würfel University of Karlsruhe, Germany
How Solar Cells Work Basic theory of photovoltaic energy conversion Peter Würfel University of Karlsruhe, Germany Three Messages Sun is a heat source, solar cells must be heat engines Important conversion
More informationLuminescence Process
Luminescence Process The absorption and the emission are related to each other and they are described by two terms which are complex conjugate of each other in the interaction Hamiltonian (H er ). In an
More informationPRESENTED BY: PROF. S. Y. MENSAH F.A.A.S; F.G.A.A.S UNIVERSITY OF CAPE COAST, GHANA.
SOLAR CELL AND ITS APPLICATION PRESENTED BY: PROF. S. Y. MENSAH F.A.A.S; F.G.A.A.S UNIVERSITY OF CAPE COAST, GHANA. OUTLINE OF THE PRESENTATION Objective of the work. A brief introduction to Solar Cell
More informationLimiting acceptance angle to maximize efficiency in solar cells
Limiting acceptance angle to maximize efficiency in solar cells Emily D. Kosten a and Harry A. Atwater a,b a Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena,
More informationFebruary 1, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC
FUNDAMENTAL PROPERTIES OF SOLAR CELLS February 1, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles and Varieties of Solar Energy (PHYS 4400) and Fundamentals of
More informationSupplemental Discussion for Multijunction Solar Cell Efficiencies: Effect of Spectral Window, Optical Environment and Radiative Coupling
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 2014 Supplemental Discussion for Multijunction Solar Cell Efficiencies: Effect
More informationChapter 7. Solar Cell
Chapter 7 Solar Cell 7.0 Introduction Solar cells are useful for both space and terrestrial application. Solar cells furnish the long duration power supply for satellites. It converts sunlight directly
More informationarxiv: v1 [physics.optics] 12 Jun 2014
Intermediate Mirrors to Reach Theoretical Efficiency Limits of Multi-Bandgap Solar Cells arxiv:1406.3126v1 [physics.optics] 12 Jun 2014 Abstract Vidya Ganapati, Chi-Sing Ho, Eli Yablonovitch University
More informationLab #5 Current/Voltage Curves, Efficiency Measurements and Quantum Efficiency
Lab #5 Current/Voltage Curves, Efficiency Measurements and Quantum Efficiency R.J. Ellingson and M.J. Heben November 4, 2014 PHYS 4580, 6280, and 7280 Simple solar cell structure The Diode Equation Ideal
More informationToward a 1D Device Model Part 1: Device Fundamentals
Toward a 1D Device Model Part 1: Device Fundamentals Lecture 7 9/29/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi 1 Learning Objectives: Toward a 1D Device Model 1.
More informationFundamental Limitations of Solar Cells
2018 Lecture 2 Fundamental Limitations of Solar Cells Dr Kieran Cheetham MPhys (hons) CPhys MInstP MIET L3 Key Question Why can't a solar cell have a 100% efficiency? (Or even close to 100%?) Can you answer
More informationEE 446/646 Photovoltaic Devices I. Y. Baghzouz
EE 446/646 Photovoltaic Devices I Y. Baghzouz What is Photovoltaics? First used in about 1890, the word has two parts: photo, derived from the Greek word for light, volt, relating to electricity pioneer
More informationMODELING THE FUNDAMENTAL LIMIT ON CONVERSION EFFICIENCY OF QD SOLAR CELLS
MODELING THE FUNDAMENTAL LIMIT ON CONVERSION EFFICIENCY OF QD SOLAR CELLS Ա.Մ.Կեչիյանց Ara Kechiantz Institute of Radiophysics and Electronics (IRPhE), National Academy of Sciences (Yerevan, Armenia) Marseille
More informationEE495/695 Introduction to Semiconductors I. Y. Baghzouz ECE Department UNLV
EE495/695 Introduction to Semiconductors I Y. Baghzouz ECE Department UNLV Introduction Solar cells have always been aligned closely with other electronic devices. We will cover the basic aspects of semiconductor
More informationFundamentals of Photovoltaics: C1 Problems. R.Treharne, K. Durose, J. Major, T. Veal, V.
Fundamentals of Photovoltaics: C1 Problems R.Treharne, K. Durose, J. Major, T. Veal, V. Dhanak @cdtpv November 3, 2015 These problems will be highly relevant to the exam that you will sit very shortly.
More informationSolar Photovoltaics & Energy Systems
Solar Photovoltaics & Energy Systems Lecture 3. Crystalline Semiconductor Based Solar Cells ChE-600 Wolfgang Tress, March 2018 1 Photovoltaic Solar Energy Conversion 2 Outline Recap: Thermodynamics of
More informationEvolution of High Efficiency. Silicon Solar Cell Design
Australian Centre for Advanced Photovoltaics Evolution of High Efficiency Silicon Solar Cell Design Martin A. Green University of New South Wales Outline Lecture 2 1. Enter the modern era 2. Principle
More informationSolar Photovoltaics & Energy Systems
Solar Photovoltaics & Energy Systems Lecture 4. Crystalline Semiconductor Based Solar Cells ChE-600 Wolfgang Tress, May 2016 1 Photovoltaic Solar Energy Conversion 2 Semiconductor vs. Heat Engine spectral
More informationThermionic Current Modeling and Equivalent Circuit of a III-V MQW P-I-N Photovoltaic Heterostructure
Thermionic Current Modeling and Equivalent Circuit of a III-V MQW P-I-N Photovoltaic Heterostructure ARGYRIOS C. VARONIDES Physics and Electrical Engineering Department University of Scranton 800 Linden
More informationEE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
More informationChemistry Instrumental Analysis Lecture 8. Chem 4631
Chemistry 4631 Instrumental Analysis Lecture 8 UV to IR Components of Optical Basic components of spectroscopic instruments: stable source of radiant energy transparent container to hold sample device
More informationThe photovoltaic effect occurs in semiconductors where there are distinct valence and
How a Photovoltaic Cell Works The photovoltaic effect occurs in semiconductors where there are distinct valence and conduction bands. (There are energies at which electrons can not exist within the solid)
More informationCourse overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy
Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one
More informationSEMICONDUCTOR PHYSICS REVIEW BONDS,
SEMICONDUCTOR PHYSICS REVIEW BONDS, BANDS, EFFECTIVE MASS, DRIFT, DIFFUSION, GENERATION, RECOMBINATION February 3, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles
More informationOrganic Electronic Devices
Organic Electronic Devices Week 4: Organic Photovoltaic Devices Lecture 4.1: Overview of Organic Photovoltaic Devices Bryan W. Boudouris Chemical Engineering Purdue University 1 Lecture Overview and Learning
More informationPerspectives with Hot Carrier solar cell
In Se Cu AFP PHOTO Perspectives with Hot Carrier solar cell J.F. Guillemoles, G.J. Conibeer,, M.A. Green 24/09/2006, Nice IRDEP Institute of Research and Development of Energy from Photovoltaics UMR CNRS
More informationReciprocity and open circuit voltage in solar cells
Reciprocity and open circuit voltage in solar cells Tom Markvart Engineering Sciences, University of Southampton, Southampton SO17 1BJ, UK, and Centre for Advanced Photovoltaics, Czech Technical University,
More informationIEEE JOURNAL OF PHOTOVOLTAICS 1. Vidya Ganapati, Chi-Sing Ho, and Eli Yablonovitch
IEEE JOURNAL OF PHOTOVOLTAICS 1 Air Gaps as Intermediate Selective Reflectors to Reach Theoretical Efficiency Limits of Multibandgap Solar Cells Vidya Ganapati, Chi-Sing Ho, and Eli Yablonovitch Abstract
More informationNote from the editor: this manuscript was reviewed previously at another journal.
Note from the editor: this manuscript was reviewed previously at another journal. Reviewer #2 (Remarks to the Author) The work proposes a novel method for sunlight-to-electricity conversion with potential
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
More informationChapter 3 Modeling and Simulation of Dye-Sensitized Solar Cell
Chapter 3 Modeling and Simulation of Dye-Sensitized Solar Cell 3.1. Introduction In recent years, dye-sensitized solar cells (DSSCs) based on nanocrystalline mesoporous TiO 2 films have attracted much
More informationELECTRONIC DEVICES AND CIRCUITS SUMMARY
ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,
More informationChapter 1 Overview of Semiconductor Materials and Physics
Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B
More informationThermophotovoltaic devices for solar and thermal energy conversion
Journées Nationales sur l'énergie Solaire «Congrès JNES 2018» 27-29 June 2018 Campus de LyonTech-la Doua, Villeurbanne, France Thermophotovoltaic devices for solar and thermal energy conversion Rodolphe
More informationModeling III-V Semiconductor Solar Cells
Modeling III-V Semiconductor Solar Cells Ideal limits to real device modeling A. W. Walker Fraunhofer Institute for Solar Energy Systems ISE PROMIS Workshop Cadiz, Spain May 18-20 th, 2016 www.ise.fraunhofer.de
More informationLecture 6 Optical Characterization of Inorganic Semiconductors Dr Tim Veal, Stephenson Institute for Renewable Energy and Department of Physics,
Lecture 6 Optical Characterization of Inorganic Semiconductors Dr Tim Veal, Stephenson Institute for Renewable Energy and Department of Physics, University of Liverpool Lecture Outline Lecture 6: Optical
More informationCarrier Recombination
Notes for ECE-606: Spring 013 Carrier Recombination Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA lundstro@purdue.edu /19/13 1 carrier recombination-generation
More informationQuantum Dot Technology for Low-Cost Space Power Generation for Smallsats
SSC06-VI- Quantum Dot Technology for Low-Cost Space Power Generation for Smallsats Theodore G. DR Technologies, Inc. 7740 Kenamar Court, San Diego, CA 92020 (858)677-230 tstern@drtechnologies.com The provision
More informationHigh efficiency silicon and perovskite-silicon solar cells for electricity generation
High efficiency silicon and perovskite-silicon solar cells for electricity generation Ali Dabirian Email: dabirian@ipm.ir 1 From Solar Energy to Electricity 2 Global accumulative PV installed In Iran it
More informationPhotovoltaic cell and module physics and technology
Photovoltaic cell and module physics and technology Vitezslav Benda, Prof Czech Technical University in Prague benda@fel.cvut.cz www.fel.cvut.cz 6/21/2012 1 Outlines Photovoltaic Effect Photovoltaic cell
More informationLecture 8. Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination
Lecture 8 Equations of State, Equilibrium and Einstein Relationships and Generation/Recombination Reading: (Cont d) Notes and Anderson 2 sections 3.4-3.11 Energy Equilibrium Concept Consider a non-uniformly
More informationLight emission from strained germanium
Light emission from strained germanium Supplementary information P. Boucaud, 1, a) M. El Kurdi, 1 S. Sauvage, 1 M. de Kersauson, 1 A. Ghrib, 1 and X. Checoury 1 Institut d Electronique Fondamentale, CNRS
More informationOptical spectroscopy of carrier dynamics in semiconductor nanostructures de Jong, E.M.L.D.
UvA-DARE (Digital Academic Repository) Optical spectroscopy of carrier dynamics in semiconductor nanostructures de Jong, E.M.L.D. Link to publication Citation for published version (APA): de Jong, EM-LD.
More informationOrganic Electronic Devices
Organic Electronic Devices Week 4: Organic Photovoltaic Devices Lecture 4.2: Characterizing Device Parameters in OPVs Bryan W. Boudouris Chemical Engineering Purdue University 1 Lecture Overview and Learning
More informationPhotovoltaic cell and module physics and technology. Vitezslav Benda, Prof Czech Technical University in Prague
Photovoltaic cell and module physics and technology Vitezslav Benda, Prof Czech Technical University in Prague benda@fel.cvut.cz www.fel.cvut.cz 1 Outlines Photovoltaic Effect Photovoltaic cell structure
More informationFundamentals of Light Trapping
Fundamentals of Light Trapping James R. Nagel, PhD November 16, 2017 Salt Lake City, Utah About Me PhD, Electrical Engineering, University of Utah (2011) Research Associate for Dept. of Metallurgical Engineering
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 8/30/2007 Semiconductor Fundamentals Lecture 2 Read: Chapters 1 and 2 Last Lecture: Energy Band Diagram Conduction band E c E g Band gap E v Valence
More informationModeling Recombination in Solar Cells
Macalester Journal of Physics and Astronomy Volume 6 Issue 1 Spring 2018 Article 2 Modeling Recombination in Solar Cells Paul Chery Macalester College, pchery@macalester.edu Abstract Solar cells are a
More informationsmal band gap Saturday, April 9, 2011
small band gap upper (conduction) band empty small gap valence band filled 2s 2p 2s 2p hybrid (s+p)band 2p no gap 2s (depend on the crystallographic orientation) extrinsic semiconductor semi-metal electron
More informationPhotonic Devices. Light absorption and emission. Transitions between discrete states
Light absorption and emission Photonic Devices Transitions between discrete states Transition rate determined by the two states: Fermi s golden rule Absorption and emission of a semiconductor Vertical
More informationBoosting the Performance of Solar Cells with Intermediate Band Absorbers The Case of ZnTe:O
Journal of Energy and Power Engineering 11 (2017) 417-426 doi: 10.17265/1934-8975/2017.06.007 D DAVID PUBLISHING Boosting the Performance of Solar Cells with Intermediate Band Absorbers The Case of ZnTe:O
More informationSemiconductor device structures are traditionally divided into homojunction devices
0. Introduction: Semiconductor device structures are traditionally divided into homojunction devices (devices consisting of only one type of semiconductor material) and heterojunction devices (consisting
More informationSolar Cell Physics: recombination and generation
NCN Summer School: July 2011 Solar Cell Physics: recombination and generation Prof. Mark Lundstrom lundstro@purdue.edu Electrical and Computer Engineering Purdue University West Lafayette, Indiana USA
More informationQuantum Dot Spectrum Converter Coverglass for Enhanced High Efficiency Photovoltaics
Quantum Dot Spectrum Converter Coverglass for Enhanced High Efficiency Photovoltaics Theodore G. Stern DR Technologies, Inc. San Diego, CA 92020 Business Area Manager Space Power, Optical and Thermal Products
More informationToward a 1D Device Model Part 2: Material Fundamentals
Toward a 1D Device Model Part 2: Material Fundamentals Lecture 8 10/4/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi 1 2.626/2.627 Roadmap You Are Here 2 2.626/2.627:
More informationMath Questions for the 2011 PhD Qualifier Exam 1. Evaluate the following definite integral 3" 4 where! ( x) is the Dirac! - function. # " 4 [ ( )] dx x 2! cos x 2. Consider the differential equation dx
More informationUltra High Efficiency Thermo-Photovoltaic Solar Cells Using Metallic Photonic Crystals As Intermediate Absorber and Emitter
Ultra High Efficiency Thermo-Photovoltaic Solar Cells Using Metallic Photonic Crystals As Intermediate Absorber and Emitter A. Investigators Shanhui Fan, Associate Professor, Electrical Engineering, Stanford
More informationHomework 6 Solar PV Energy MAE 119 W2017 Professor G.R. Tynan
Homework 6 Solar PV Energy MAE 119 W2017 Professor G.R. Tynan 1. What is the most likely wavelength and frequency of light emitted from the sun which has a black body temperature of about 6600 deg K? What
More informationSelf-Consistent Drift-Diffusion Analysis of Intermediate Band Solar Cell (IBSC): Effect of Energetic Position of IB on Conversion Efficiency
Self-onsistent Drift-Diffusion Analysis of ntermediate Band Solar ell (BS): Effect of Energetic Position of B on onversion Efficiency Katsuhisa Yoshida 1,, Yoshitaka Okada 1,, and Nobuyuki Sano 3 1 raduate
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More informationThe Shockley-Queisser Limit and its Discontents
The Shockley-Queisser Limit and its Discontents Steven Byrnes Postdoc, Applied Physics, Harvard University Feb. 19, 2015 steven.byrnes@gmail.com Code to create all plots at: http://sjbyrnes.com/sq.html
More information3.1 Absorption and Transparency
3.1 Absorption and Transparency 3.1.1 Optical Devices (definitions) 3.1.2 Photon and Semiconductor Interactions 3.1.3 Photon Intensity 3.1.4 Absorption 3.1 Absorption and Transparency Objective 1: Recall
More informationModeling solutions and simulations for advanced III-V photovoltaics based on nanostructures
Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 1-1-008 Modeling solutions and simulations for advanced III-V photovoltaics based on nanostructures Ryan Aguinaldo
More informationElectron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
More informationOpto-electronic Characterization of Perovskite Thin Films & Solar Cells
Opto-electronic Characterization of Perovskite Thin Films & Solar Cells Arman Mahboubi Soufiani Supervisors: Prof. Martin Green Prof. Gavin Conibeer Dr. Anita Ho-Baillie Dr. Murad Tayebjee 22 nd June 2017
More informationn N D n p = n i p N A
Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donor-doped semiconductor: n N D where N D is the concentration of donor impurity Acceptor-doped
More informationPhotodiodes and other semiconductor devices
Photodiodes and other semiconductor devices Chem 243 Winter 2017 What is a semiconductor? no e - Empty e levels Conduction Band a few e - Empty e levels Filled e levels Filled e levels lots of e - Empty
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor
More informationEECS143 Microfabrication Technology
EECS143 Microfabrication Technology Professor Ali Javey Introduction to Materials Lecture 1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) Why Semiconductors? Conductors e.g
More informationSheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer
Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice
More informationLecture 4 - Carrier generation and recombination. February 12, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 4-1 Contents: Lecture 4 - Carrier generation and recombination 1. G&R mechanisms February 12, 2007 2. Thermal equilibrium: principle
More informationKATIHAL FİZİĞİ MNT-510
KATIHAL FİZİĞİ MNT-510 YARIİLETKENLER Kaynaklar: Katıhal Fiziği, Prof. Dr. Mustafa Dikici, Seçkin Yayıncılık Katıhal Fiziği, Şakir Aydoğan, Nobel Yayıncılık, Physics for Computer Science Students: With
More informationSilicon Concentrator Solar Cells: Fabrication, Characterization and Development of Innovative Designs.
University of Trento Department of Physics Doctoral School in Physics, XXV cycle Phd Thesis Silicon Concentrator Solar Cells: Fabrication, Characterization and Development of Innovative Designs. Candidate:
More informationGCEP Symposium 5 October 2011 HOT CARRIER SOLAR CELLS
GCEP Symposium 5 October 2011 HOT CARRIER SOLAR CELLS Gavin Conibeer - Photovoltaics Centre of Excellence, UNSW Robert Patterson, Pasquale Aliberti, Shujuan Huang, Yukiko Kamakawa, Hongze Xia, Dirk König,
More informationEE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors
EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification
More informationWith certain caveats (described later) an object absorbs as effectively as it emits
Figure 1: A blackbody defined by a cavity where emission and absorption are in equilibrium so as to maintain a constant temperature Blackbody radiation The basic principles of thermal emission are as follows:
More informationPractical 1P4 Energy Levels and Band Gaps
Practical 1P4 Energy Levels and Band Gaps What you should learn from this practical Science This practical illustrates some of the points from the lecture course on Elementary Quantum Mechanics and Bonding
More informationBasic cell design. Si cell
Basic cell design Si cell 1 Concepts needed to describe photovoltaic device 1. energy bands in semiconductors: from bonds to bands 2. free carriers: holes and electrons, doping 3. electron and hole current:
More informationChapter 2 Introduction to Solar Cell Operation
Chapter 2 Introduction to Solar Cell Operation This chapter discusses the very fundamental working principle of a solar cell. It is intended to briefly motivate the relevance of carrier recombination and
More information5. Semiconductors and P-N junction
5. Semiconductors and P-N junction Thomas Zimmer, University of Bordeaux, France Summary Learning Outcomes... 2 Physical background of semiconductors... 2 The silicon crystal... 2 The energy bands... 3
More informationUnit IV Semiconductors Engineering Physics
Introduction A semiconductor is a material that has a resistivity lies between that of a conductor and an insulator. The conductivity of a semiconductor material can be varied under an external electrical
More informationPractical 1P4 Energy Levels and Band Gaps
Practical 1P4 Energy Levels and Band Gaps What you should learn from this practical Science This practical illustrates some of the points from the lecture course on Elementary Quantum Mechanics and Bonding
More informationEE143 Fall 2016 Microfabrication Technologies. Evolution of Devices
EE143 Fall 2016 Microfabrication Technologies Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Evolution of Devices Yesterday s Transistor (1947) Today s Transistor (2006) 1-2 1 Why
More informationSession 5: Solid State Physics. Charge Mobility Drift Diffusion Recombination-Generation
Session 5: Solid State Physics Charge Mobility Drift Diffusion Recombination-Generation 1 Outline A B C D E F G H I J 2 Mobile Charge Carriers in Semiconductors Three primary types of carrier action occur
More information