N-Channel Lateral DMOS FETs

Transcription

1 N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow) Part Number V (BR)DS Min (V) V GS(th) Max (V) r DS(on) Max ( ) C rss Max (pf) t ON Max (ns) SDDE- 3.5 V GS = V.5 SDDE-.5 V GS = V.5 Ultra-High Speed Switching t ON : ns Ultra-Low Reverse Capacitance:. pf Low Guaranteed r 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver The are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SDDE- is normally used for -V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. The SDDE/DE are available only in the extended hi-rel flow. The flow complies with the requirements of MIL-PRF-95 for JANTX discrete devices. For similar products see: quad array SD5I-, and Zener protected SDDE-/3DE-/5DE-. TO-6AF (TO-7) S Body Substrate (Case) 3 D G Top View Gate-Drain, Gate-Source Voltage V Gate-Substrate Voltage V Drain-Source Voltage SDDE V SDDE-) V Source-Drain Voltage SDDE- V SDDE- V Drain-Substrate Voltage SDDE- 3 V SDDE- 5 V Source-Substrate Voltage SDDE- 5 V SDDE- 5 V Drain Current ma Lead Temperature ( / 6 from case for seconds) C Storage Temperature to 5 C Operating Junction Temperature to 5 C Power Dissipation a mw Notes: a. Derate 3 mw/ C above 5 C Applications Information See Applications Note AN5 Document Number: 79 S-889 Rev. E, -Dec-

2 Limits SDDE- SDDE- Parameter Symbol b Test Conditions b Typ c Min Max Min Max Unit Static V GS = V BS = V, I D = A 35 3 Drain-Source Breakdown Voltage V (BR)DS V GS = V BS = 5 V, I D = na 3 Source-Drain Breakdown Voltage V (BR)SD V GD = V BD = 5 V, I S = na Drain-Substrate Breakdown Voltage V (BR)DBO V GB = V, I D = na, Source Open V Source-Substrate Breakdown Voltage V (BR)SBO V GB = V, I S = A, Drain Open Drain-Source Leakage I DS(off) V GS = V BS = 5 V Source-Drain Leakage I SD(off) V GD = V BD = 5 V V DS = V. V DS = V.9 V SD = V.5 na V SD = V.8 Gate Leakage I GBS V DB = V SB = V, V GB = V... Threshold Voltage V GS(th) V DS = V GS, I D = A, V SB = V V V GS = 5 V V Drain-Source On-Resistance r SB = V DS(on) I D = ma V GS = V V GS = 5 V 3 V GS = V 6 V GS = 5 V Dynamic Forward Transconductance g fs g os V DS = V, V SB = V, I D = ma f = khz.9 ms Gate Node Capacitance C (GS+GD+GB) Drain Node Capacitance C (GD+DB) V DS = V, f = MHz..5.5 Source Node Capacitance C (GS+SB) V GS = V BS = 5 V pf Reverse Transfer Capacitance C rss..5.5 Switching Turn-On Time Turn-Off Time t d(on).5 t r VSB V = V, V IN to 5 V, R G = 5.6 t d(off) V DD = 5 V, R L = 68 t f 6 ns Notes: a. T A = 5 C unless otherwise noted. DMCBB b. B is is the body (substrate) and V (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Document Number: 79 S-889 Rev. E, -Dec-

3 rds(on) Drain-Source On-Resistance ( ) On-Resistance vs. Gate-Source Voltage V GS = V 5 V V Leakage na na pa pa Leakage Current vs. Applied Voltage ID VGS = VBG = 5 V VGD = VBD = 5V VGB = V, Drain Open I S(off) I SBO I GSS (Diode) I D(off) 8 6 V SB Source-Body Voltage (V) pa 8 6 Applied Voltage (V) ( ) rds(on) Drain-Source On-Resistance ( ) R L On-Resistance vs. Temperature I D = 5 ma, V BS = V V GS = 5 V 5 V V V 6 6 T A Temperature ( C) Switching Characteristics gfs Forward Transconductance V GS(th) Gate-Source Threshold Voltage (V) 6 8 Common-Source Forward Transconductance vs. Drain Current V DS = 5 V V BS = V T A = 55 C 5 C 5 C 5 3 I D Drain Current (ma) Threshold Voltage vs. Temperature V GS = V DS = V TH I D = ma V BS = V 5 V V V.5 V 6 6 t f Fall Time (ns) T A Temperature ( C) Document Number: 79 S-889 Rev. E, -Dec- 3

4 V GS(th) Gate-Source Threshold Voltage (V) Threshold Voltage vs. Substrate-Source Voltage 5 3 V GS = V DS = V TH I D = A T A = 5 C H L Leakage (na) Leakage Current vs. Temperature I V GS = V BS = 5 V, V DS = V I V GD = V BD = 5 V, V SD = V I V GS = V I V SB = V Drain Open I GSS (Diode) I S(off) I D(off) I SBO V BS Body-Source Voltage (V) T A Temperature ( C) 8 Capacitance vs. Gate-Source Voltage V DS = V, f = MHz V GS = V BS A A A Body Leakage Current vs. Drain-Body Voltage I D = 3 ma Capacitance (pf) 6 C (GS+SB) C (GS+GD+GB) C (GD+DB) Body Leakage I B na na na pa pa ma C (DG) 8 6 pa 8 6 V GS Gate-Source Voltage (V) V DB Drain-Body Voltage (V) V DS = V I D = ma T A = 5 C Input Admittance V DS = V I D = ma T A = 5 C Forward Admittance g fs b is g is b fs Document Number: 79 S-889 Rev. E, -Dec-

5 V DS = V I D = ma T A = 5 C Reverse Admittance V DS = V I D = ma T A = 5 C Output Admittance 9 b rs. +g rg b og. g rg g og V BS = V T A = 5 C Output Characteristics. Output Conductance vs. Drain Current V BS = V f = khz Drain Current (ma) I D 3 V GS = 5 V V 3 V V gos Output Conductance V 5 V V DS = 5 V V DS Drain-Source Voltage (V) I D Drain Current (ma) To Scope +V DD +5 V 5 R L V OUT To Scope V IN V 5% V IN Input pulse: td, tr < ns Pulse width: ns Rep rate: MHz t d(on) t d(off) 5 Sampling Scope tr < 36 ps RIN = M CIN = pf BW = 5 MHz +V DD V OUT V t r 5% % t f 9% Document Number: 79 S-889 Rev. E, -Dec- 5

6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: -Mar-