BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA
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1 NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-323 MECHANICAL DATA - Case: SOT-323 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260 C/s - Weight: 5 ± 0.5 mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) PARAMETER Power Dissipation Collector-Base oltage Collector-Emitter oltage Emitter-Base oltage Collector Current Peak Collector Current Junction and Storage Temperature Range SYMBOL ALUE UNIT P D CBO CEO EBO I C I CM 200 mw A 0.2 A T J, T STG -55 to + 50 C ersion: B5
2 PARAMETER SYMBOL MIN MAX UNIT Collector-Base Breakdown oltage 80 - at I C = μa 50 - CBO 50 - Collector-Emitter Breakdown oltage 65 - at I C = ma 45 - (BR)CEO 45 - Emitter-Base Breakdown oltage 6 - at I E = μa 6 - EBO Collector Cut-off Current at CB = I CBO - 5 na Emitter Cut-off Current at EB = 5 I EBO - 0 na BC846AW - BC850AW DC Current Gain BC846BW - BC850BW h FE at CE = 5, I C = 2 ma BC846CW - BC850CW Collector-Emitter Saturation oltage I C = ma, I B = 0.5 ma CE(sat) I C = 0mA, I B = 5 ma Transition Frequency CE = 5, I C = ma, f = 0 MHz f T 0 - MHz Base Emitter oltage CE = 5, I C = 2 ma BE CE = 5, I C = ma Collector Output Capacitance CB =, I E = 0, f = MHz C ob pf ersion: B5
3 RATINGS AND CHARACTERISTICS CURES (T A =25 C unless otherwise noted) Fig. Normalized DC Current Gain.0 Fig.2 "Saturation" and "On" oltages h FE, Normalized DC Current Gain CE =, oltage () I C / I B = CE = I C / I B = I C, Collector Current (madc) I C, Collector Current (madc) Fig.3 Collector Saturation Region Fig.4 Base-Emitter Current (ma) 2.0 CE, Collector-Emitter oltage ().6.2 I C =0mA I C =50mA I C =20mA I C =ma I C =200mA Θ B, Temperature Coefficient (m/ o C) o C to +25 O C I B, Base Current (ma) Fig.5 Capacitances Fig.6 Current-Gain-Bandwidth Product 00 C, Caoacitance (pf) C Ib C Ob 0. 0 f T, Current-Gain-Bandwidth Product (MHz) 0 CE = 0. 0 R, Reverse oltage () I C, Collector Current (madc) ersion: B5
4 Fig.7 DC Collector Current (ma) Fig. 8 "On" oltage h FE, DC Current Gain (Normalized) CE = 5, oltage () I C / I B = CE = I C / I B = I C, Collector Current(mA) Fig.9 Collector Saturation Region Fig.4 Bae-Emitter Temperature Coefficient o C to +25 O C CE, Collector-Emitter oltage ().6.2 I C =200mA I C =0mA I C =50mA I C =20mA I C =ma Θ B, Temperature Coefficient (m/ o C) Θ B for BE I B, Base Current (ma) Fig. Capacitance 00 Fig.2 Current-Gain-Bandwidth Product CE = 5 C, Capacitance (pf) C lb C Ob f T, Current-Gain-Bandwidth R, Reverse oltage () ersion: B5
5 ORDER INFORMATION (EXAMPLE) BC846AW RFG Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS SOT-323 DIM. Unit (mm) Unit (inch) Min Max Min Max A B C D E F SUGGEST PAD LAYOUT DIM. Z X Y C E Unit (mm) Unit (inch) Typ. Typ MARKING Part No. BC846AW BC847AW BC848AW BC849AW BC850AW Marking Part No. Marking Part No. Marking A BC846BW B BC846CW C E BC847BW F BC847CW G E BC848BW F BC848CW G E BC849BW F BC849CW G E BC850BW F BC850CW G ersion: B5
6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. ersion: B5
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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NPN Silicon RF Transistor For broadband amplifiers up to GHz at collector currents from ma to ma Pbfree (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device,
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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