CAS300M12BM2 1.2kV, 5.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
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1 CAS3M12BM2 1.2kV, 5. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, 3A R DS(on) 1.2 kv 12. mj 5. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Package 62mm x 16mm x 3mm Applications Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction Part Number Package Marking CAS3M12BM2 Half-Bridge Module CAS3M12BM2 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DSmax Drain - Source Voltage 1.2 kv V GSmax Gate - Source Voltage -1/+25 V Absolute Maximum values V GSop Gate - Source Voltage -5/2 V Recommended Operational Values Datasheet: CAS3M12BM2,Rev. - I D Continuous Drain Current 44 V GS = 2 V, T C = 25 C A 285 V GS = 2 V, T C = 9 C Fig. 24 I D(pulse) Pulsed Drain Current 15 A Pulse width t P = 2 μs Repetition rate limited by T jmax,t C = 25 C T Jmax Junction Temperature 15 C T C,T STG Case and Storage Temperature Range -4 to +125 C V isol Case Isolation Voltage 4. kv AC, 5 Hz, 1 min L Stray Stray Inductance 14 nh Measured between terminals 2 and 3 P D Power Dissipation 166 W T C = 25 C, T J = 15 C Fig. 23 Subject to change without notice. 1
2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain - Source Breakdown Voltage 1.2 kv V GS, = V, I D = 1 ma V GS(th) Gate Threshold Voltage V V DS = 1 V, ID = 15 ma Fig 7 I DSS Zero Gate Voltage Drain Current 5 2 μa V DS = 1.2 kv, V GS = V 1 V DS = 1.2 kv,v GS = V, T J = 15 C I GSS Gate-Source Leakage Current 1 1 na V GS = 2 V, V DS = V R DS(on) g fs On State Resistance Transconductance C iss Input Capacitance 11.7 C oss Output Capacitance 2.55 C rss Reverse Transfer Capacitance mω V GS = 2 V, I DS = 3 A V GS = 2 V, I DS = 3 A, T J = 15 C 94.8 V DS = 2 V, IDS = 3 A 93.3 S V DS = 2 V, ID = 3 A, T J = 15 C nf V DS = 6 V, f = 2 khz, V AC = 25 mv Fig. 4, 5, 6 Fig. 8 Fig. 16, 17 E on Turn-On Switching Energy 6.5 mj V DD = 6 V, V GS = -5V/+2V I D = 3 A, R G(ext) = 2.5 Ω E Off Turn-Off Switching Energy 5.95 mj Note: IEC Definitions Fig. 19, 2 R G (int) Internal Gate Resistance 3. Ω f = 2 khz, V AC = 25 mv Q GS Gate-Source Charge 166 Q GD Gate-Drain Charge 475 Q G Total Gate Charge 125 nc V DD= 8 V, V GS = -5V/+2V, I D= 3 A, Per JEDEC24 pg 27 t d(on) Turn-on delay time 76 ns V DD = 6V, V GS = -5/+2V, I D = 3 A, R G(ext) = 2.5 Ω, t r Rise Time 68 ns Timing relative to V DS t d(off) Turn-off delay time 168 ns Note: IEC , pg 83 t f Fall Time 43 ns Inductive load Free-Wheeling SiC Schottky Diode Characteristics Fig. 15 Fig. 25 Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V SD Diode Forward Voltage Q C Total Capacitive Charge 3.2 μc Note: The reverse recovery is purely capacitive I F = 3 A, V GS = Fig. 9, V I F = 3 A, T J = 15 C, V 1, 11 GS = Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET.7.75 T c = 9 C, P D = 15 W Fig. 27, C/W R 28 thjcd Thermal Resistance Juction-to-Case for Diode T c = 9 C, P D = 13 W Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 3 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 12 mm Terminal to terminal Creepage Distance 3 mm Terminal to terminal 4 mm Terminal to baseplate 2 CAS3M12BM2,Rev. -
3 Typical Performance 6 V GS = 2 V 6 V GS = 2 V V GS = 18 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V V GS = 18 V V GS = 16 V V GS = 14 V V GS = 12 V V GS = 1 V 1 T J = -4 C t p = 2 µs T J = 25 C t p = 2 µs Figure 1. Typical Output Characteristics T J = -4 C Figure 2. Typical Output Characteristics T J = 25 C V GS = 16 V V GS = 14 V V GS = 18 V V GS = 2 V V GS = 1 V V GS = 12 V T J = 15 C t p = 2 µs On Re esistance, R DS On (p.u.) I DS = 3 A V GS = 2 V t p = 2 µs Junction Temperature, T J ( C) Figure 3. Typical Output Characteristics T J = 15 C Figure 4. Normalized On-Resistance vs. Temperature On Re esistance, R DS On (mω) I DS = 3 A t p = 2 µs V GS = 16 V V GS = 2 V V GS = 14 V V GS = 12 V V GS = 18 V Junction Temperature, T J ( C) Figure 5. Typical On-Resistance vs. Temperature for Various Gate-Source Voltage On-Resistance, R DS ON (mω) T j = - 4 C T j = 25 C T j = 15 C Gate-Source Voltage, V GS (V) I DS = 3 A t p = 2 µs Figure 6. Typical On-Resistance vs. Gate Voltage 3 CAS3M12BM2,Rev. -
4 Typical Performance Thresho old Voltage, V th (V) Typ Conditions V DS = 1 V I DS =.5 15 ma S Source Current, I DS (A) V DS = 2 V tp < 2 µs T J = 15 C T J = -4 C Junction Temperature T J ( C) Figure 7. Threshold Voltage vs. Temperature Gate-Source Voltage, V GS (V) Figure 8. Transfer Characteristic for Various Junction Temperatures V GS = V V GS = -2 V V GS = -5 V V GS = -2 V T J = -4 C t p = 2 µs -5-6 V GS = -5 V V GS = V T J = 25 C t p = 2 µs -5-6 Figure 9. Diode Characteristic at -4 C Figure 1. Diode Characteristic at 25 C V GS = -2 V V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V V GS = -5 V V GS = V T J = 15 C t p = 2 µs -5-6 T J = 25-4 C t p = 2 µs -5-6 Figure 11. Diode Characteristic at 15 C Figure rd Quadrant Characteristic at -4 C 4 CAS3M12BM2,Rev. -
5 Typical Performance V GS = V V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V T J = 25 C t p = 2 µs -5 T J = C t p = 2 µs Figure rd Quadrant Characteristic at 25 C Figure rd Quadrant Characteristic at 15 C Gate-Sou urce Voltage, V GS (V) TJ = 25 C I DS = 3 A V DS = 1 V Capacitance (nf) C C iss C oss C rss V AC = 25 mv f = 2 khz Gate Charge (nc) Source Voltage, V DS (V) Figure 15. Typical Gate Charge Characteristics Figure 16. Typical Capacitances vs. Source Voltage ( - 2 V) 1 1 C iss V AC = 25 mv f = 2 khz Capacitance (nf) C 1.1 C oss C rss Stored Energy, E OSS (mj) Source Voltage, V DS (V) Drain to Source Voltage, V DS (V) Figure 17. Typical Capacitances vs. Source Voltage ( - 1 kv) Figure 18. Typical Output Capacitor Stored Energy 5 CAS3M12BM2,Rev. -
6 Typical Performance Swit tching Loss (mj) V DD = 6 V R G(ext) = 2.5 Ω V GS = -5/+2 V L = 77 μh E On E Total Swit tching Loss (mj) V DD = 8 V R G(ext) = 2.5 Ω V GS = -5/+2 V L = 77 μh E On E Total 4 2 E Off 5 E Off Drain to Source Current, I DS (A) Drain to Source Current, I DS (A) Figure 19. Inductive Switching Energy vs. Drain Current For V DS = 6V, R G = 2.5 Ω Figure 2. Inductive Switching Energy vs. Drain Current For V DS = 8 V, R G = 2.5 Ω V DD = 6 V I DS =3 A V GS = -5/+2 V L = 77 μh E Total E Total Swit tching Loss (mj) E On E Off Swit tching Loss (mj) V DD = 6 V R G(ext) = 2.5 Ω I DS =3 A V GS = -5/+2 V L = 77 μh E Off E On External Gate Resistor RG(ext) (Ohms) Junction Temperature, T J ( C) Figure 21. Inductive Switching Energy vs. R G(ext) Figure 22. Inductive Switching Energy vs. Temperature Dissipated Power, P tot (W) Maximum T J 15 C Continous Current, I DS (DC) (A) Source T J 15 C Case Temperature, T C ( C) Figure 23. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature Case Temperature, T C ( C) Figure 24. Continous Drain Current Derating vs Case Temperature 6 CAS3M12BM2,Rev. -
7 Typical Performance Time (ns) V DD = 6 V I DS = 3 A V GS = -5/+2 V t d (off) t d (on) External Gate Resistor, R G(ext) (Ohms) t r t f Drain Limited by R DS On 1 ms 1 ms 1 µs.1 T C = 25 C D =, Parameter: t p Source Voltage, V DS (V) 1 µs Figure 25. Timing vs. R G(ext) Figure 26. Continous Drain Current Derating vs Case Temperature 1E-3 1E Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E SinglePulse Junction To Case Impedance, Z thjc ( o C/W) 1E-3 1E-3 1E SinglePulse 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, t p (s) Figure 27. MOSFET Junction to Case Thermal Impedance 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, t p (s) Figure 28. Diode Junction to Case Thermal Impedance 7 CAS3M12BM2,Rev. -
8 Schematic Package Dimensions (mm) 8 CAS3M12BM2,Rev. -
9 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Copyright 214 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: CAS3M12BM2 Rev. -
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: CAS3M12BM2
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Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
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Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
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Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
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