Heterogeneous 3D integration considered by the perspective of reliability studied in the European projects e-brains and ESiP

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Workshop Heterogeneous 3D integration considered by the perspective of reliability studied in the European projects and ESiP Best-Reliable Ambient Intelligent Nanosensor Systems by Heterogeneous

1 Workshop Heterogeneous 3D integration considered by the perspective of reliability studied in the European projects and ESiP Best-Reliable Ambient Intelligent Nanosensor Systems by Heterogeneous Integration IC Device 2 (Technology 2) with TSV JU Grant Agreement number: Call 2009 / ESiP Efficient Silicon Multi-Chip System-in-Package Integration Reliability, Failure Analysis and Test 1

2 /ESiP Challenges of Active Medical Implants 2

3 AIMD devices Current Portfolio Future Multisite pacing leads Leadless PM 3

4 Smart Systems in AIMD Monitoring Patient Parameters Hemodynamic sensing for cardiac resynchronization Accelerometer and body impedance measurement for auto-calibration of pacing rate 4

IC Device 2 (Technology 2) with TSV Requirements of AIMD Ultra-Low power consumption Long adoption time of technologies due to clinical studies and approval

5 IC Device 2 (Technology 2) with TSV Requirements of AIMD Ultra-Low power consumption Long adoption time of technologies due to clinical studies and approval from Notified bodies Proven reliability 10 years or more Biocompatibility Pt/Ir Seismic mass Micro Electronic circuit Piezoceramic Transducer Micro spring 5

6 Smart Systems in AIMD Wireless Communication Home Monitoring Body Area Network 6

7 SORIN CRM-3D PLUS Objectives Objectives Realization of a leadless pacemaker demonstrator Reduce the size by x 16 ( 8 cc 0.5 cc) Eliminate the connecting leads 7

8 First Mock-up : ( T2 release with batteries ) Q LeadLess Pacemaker integration CAD Design Mock-up without : - Heart Fixation System - Electrodes for pacing Mock-up 20/07/2012 8

9 IC Device 2 (Technology 2) with TSV INTERNAL Capsule Design : ( T2 Mock-Up ) Q Feed Through connections Power-pack batteries Electronic module 3D+ KOVAR connections 7.3 x 5.2 mm 9

10 IC Device 2 (Technology 2) with TSV EXTERNAL Capsule Design : ( T2 Mock-Up ) Q Mock-up without : - Heart Fixation System - Electrodes for pacing Mock-up 20/07/

11 IC Device 2 (Technology 2) with TSV EXTERNAL Capsule Design : ( T2 Mock-Up ) Q Mock-up 20/07/

12 3D PLUS module layers Dimensions : 2.3 x 5.2 x 7.3 mm 12

13 3D PLUS : Module Status A Spiralliance Panel Size & Package Outline 13

14 3D PLUS : Module Status MODULE MANUFACTURING OUTLINE: 1.WDoD LEVELS MANUFACTURED AT NANIUM = DECEMBER 2012 DIAMOND LP1 FIRST NANIUM SET-UP RESULTS SPIRALLIANCE PICS PICS SCAV CHIP DUMMY ZENER 14

IC Device 2 (Technology 2) with TSV Reliability of AIMD Pacemakers : >8 years Defibrillators: >7 years Leads: no replacement once implanted Lead-less PM: no replacement once implanted Devices PM and

15 IC Device 2 (Technology 2) with TSV Reliability of AIMD Pacemakers : >8 years Defibrillators: >7 years Leads: no replacement once implanted Lead-less PM: no replacement once implanted Devices PM and ICD Lead-less PM Leads Long term reliability challenges Whiskers Electromigration (dendrite, CAF) Vibrations ( over 10 years) Exposition to body fluids => Biocompatibility Vibrations ( over 10 years) Reliability over 10 years is required 15

Integrated Passives Devices Technology This

resistors, inductances, diodes Capacitance values

network versus unitary dies Quantity = 8 Unitary

questions: thermal dissipation withstanding?

16 Integrated Passives Devices Technology This technology can offer integration of capacitances, resistors, inductances, diodes Capacitance values on the market >1µF Case study 8V Zener diodes network versus unitary dies Quantity = 8 Unitary dies Stotal= 8 mm² PICS in COB = 1 mm² Open questions: thermal dissipation withstanding? Courtesy of IPDIA Range of capacitances than can be considered for PM and ICD 16

IC Device 2 (Technology 2) with TSV IPD Advantages Easily buriable in PCB or stacked on a die with a fanout redistribution layer Reliability of silicon technology.

17 IC Device 2 (Technology 2) with TSV IPD Advantages Easily buriable in PCB or stacked on a die with a fanout redistribution layer Reliability of silicon technology. For capacitances: Increased reliability compared to X7R MLCC thanks to a very high Mean Time To Failure Improvement of electrical parameters : ageing rate, high temperature stability, high voltage stability Size reduction: up to 10 times smaller than classic technologies 17

18 Conclusion for IPD IPD technology answers to AIMD requirements: Low power consumption (low leakage current) Reliability of silicon technology Size reduction: high integration density Cost reduction due to size reduction CHALLENGES: Larger range of values Capacitors Inductors Validation of the couple IPD/AIMD Thermal dissipation Compliance with SORIN manufacturing process 18

IC Device 2 (Technology 2) with TSV Objectives for piezoelectric harvester The three main

the harvester volume must be lower than 0.5 mm 3 approximatively.

The energy requirement: At least few tens of µw are required, which means that a minimum amount

19 IC Device 2 (Technology 2) with TSV Objectives for piezoelectric harvester The three main requirements that the piezoelectric energy harvester must fulfill are: The volume requirement: the harvester volume must be lower than 0.5 mm 3 approximatively. The frequency requirement: The vibration energy is mainly localized around 10-20Hz. The energy requirement: At least few tens of µw are required, which means that a minimum amount of electro-active material (piezoelectric material) is required. Objectives 1. Characterization 2. Reliability and Robustness test Quality foctor Capacity Stiffness Resonance frequency Effective coupling coefficient Power factor Dielectric losses Fatigue test Storage temperature Operating temperature Vibration test Shock test 19

Harvester Presentation The harvester will be

to be well suited to this kind of geometry.

20 Harvester Presentation The harvester will be located in a cardiac implant which is of cylindrical shape. The clamped free beam configuration appears to be well suited to this kind of geometry. Because of the energy requirement it is of interest to maximize the amount of electro-active material. Therefore we have selected the bimorph configuration (two piezoelectric layers, pooled in series configuration ). Mass cross-section Equivalent rectangular mass 20

both side of the beam. The beam is then tightly clamped.

21 Encapsulation clamping (1/2) Below is the suggested clamping principle. Once all parts are mounted together, a transverse force is applied on both side of the beam. The beam is then tightly clamped. Note that the clamping elements are supposed to be electrically conductive. V+ V- 21

22 IC Device 2 (Technology 2) with TSV Test campaign organisation Micro generators using Micro generators withdraw Fatigue test Storage temperature Operation temperature Vibration test Shock test 22

23 IC Device 2 (Technology 2) with TSV Storage Temperature Parameters Fr [Hz] Fa [Hz] Resonance frequency Anti- Resonance frequency Before storage cycle After storage cycle N Fr Fa C Keff Q Fr Fa C Keff Q [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] C [uf] Keff Q Capacity Coupling coef. Quality coef. 23

24 Fatigue Test Imposed race excitation Before After N Fr Fa C Keff Q Fr Fa C Keff Q [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ]

25 Operating Temperature Parameters 25 C (initial) 31 C N Fr Fa C Keff Q P Fr Fa C Keff Q P [ µw [ µw [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] ] C 25 C (final) 1 2 Fr [Hz] Fa [Hz] C [uf] Keff Q P [uw] Resonance frequency Anti- Resonance frequency Capacity Coupling coef. Quality coef. Power 25

26 Vibration Test Constant acceleration between 5 Hz and 500 Hz 7(m/s 2 ) 2 /Hz 30 minutes 3 axes Before vibration After vibration N Fr Fa C Keff Q Fr Fa C Keff Q [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ]

27 Shock Test Before vibration After vibration N Fr Fa C Keff Q Fr Fa C Keff Q [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ] [ Hz ] [ Hz ] [ µf ] [ ] [ ]

28 Thank You 28

Aerospace Performances of IPDiA -250 C up to 250 C Grade Silicon Capacitors

Aerospace Performances of IPDiA -250 C up to 250 C Grade Silicon Capacitors Laurent Lengignon, IPDiA, 2 rue de la Girafe, 14000 Caen, France Alter Technology, Madrid, Spain, Demetrio Lopez ESA/ESTEC, Noordwijk,