X-band Low v g Structure Design. Zenghai Li ISG8 SLAC, June 24-27, 2002
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1 X-band Low v g Structure Design Zenghai Li ISG8 SLAC, June 24-27, 2002
2 Last ISG: High Phase Advance TW Why Phase Advance? Large aperture: a/λ = 0.18 Low group velocity: v g /c = 0.03 or 0.05 Low surface field (E S /E a 2): elliptical iris Low coupler field: inline taper Good RF efficiency
3 Toward A Fully Damped Detuned Design H60VG3 was the pick Wakefield minimization coupling, detuning and interleaving Surface field reduction: coupler and regular cells Minimization of RF pulse heating
4 Low Vg H-type Structures φ/cell (degree) T f (ns) τ v g /c (%) F 1,center (GHz) F/ F 1,center (%) a w (mm) Power in (MW) Current (A) G loaded (MV/m) G UNloaded (MV/m) Vg3_ L struct (m) N cell /4σ Vg3_ /4σ Vg5_ /4σ
5 H-Structure Dipole Designed for manifold damping H90VG5 PHI=150 0, vg=5.06% H60VG3 RDSFT (struct06) H90VG3 (RDSFT struct04) F (GHz) 16 F1 (GHz) F1 (GHz) Phase (degree) Phase (degree) Phase (deg) Manifold Good Good Bad Local bad bad good
6 Lower Kick Factor At high Phase advance 6.00E+16 phi=150, vg5.06% RDDS1 5.00E+16 Ks (V/C/m/m) 4.00E E E E E Frequency (GHz)
7 Structure Surface Fields ds1 rdds1 H60VG3 H90VG5 T105VG5 H90VG3
8 H60VG3 Structure T fill (ns) 110 τ P RF (MW) I (A) G RF (MV/m) 65.0 G B G L 51.0 G (MV/m/sqrt(MW/m)) RDSFT vg3 60cm struct06 Es=G*EsEa G_unl(MV/m) EsEa Cell number G (MV/m) RDSFT 60cm structure G_RF 0.00 G_L G_B z (m)
9 Further Surface Field Reduction Elliptical iris will be implemented in next test structures In-line taper is incorporated in the upcoming test structures H60VG3 inline taper 23cell model n a b t anose b ave bl *0.5*( L tl) + br *0.5*( L tr) = L 0.5*( t + t ) l r
10 Cup Thickness Of Tapered Struct. L L cup, n structure Tn Tn 1 = L+ 2 T T = N 1 0 N 1 Lcup, n n= 0 With large taper in T, CUP length need to be adjusted
11 H60VG3 Test Struct Cup Length L = L cup -L=0.5*(t r -t l ) H60VG3: 0.5*(t_r-t_l) 0.5*(t_r-t_l) (mm) Cell number
12 Dispersive Effect (RDSFT vg=3%, struct04) Waveform distorted Small jitter in V acc Energy profile meets requirement
13 Weighting Function of Fundamental Mode 4.00E E+04 C001 M=0 V g 3 RDDS1 2.00E E+04 RDDS1 W 0.00E E E E ω = ω0 (1 + W s d) d>0 more copper -4.00E E+04 C082 M=0 s (m) d W 2.00E E E E E E E E E E+04 s (m)
14 H-Structure Dipole Wake Damping Present design: manifold damping similar to RDDS1 Using 2mm narrow slot instead of 1.5mm Optimize coupling of cell to manifold HOM coupler need to be designed RF pulse heating around slot opening Other damping options
15 Manifold Parameters Structure has much fewer cells Phase advancer different from previous DDS What coupling we need (RJ)? What coupling can we get? Evaluate both RTOP and DLWG cells
16 H60VG3 Dipole Dispersion (RTOP) H60VG3 (RTOP) c001 c028 c055 c001b Rmanif=4.8mm Slot depth=3.0mm F 1 at avoided crossing C001b: 280 MHz C028b: 341 MHz C055: 298 MHz F1 (GHz) Phase (deg) c Rmanif=3.7mm Slot depth=3.5mm c Rmanif=3.4mm Slot depth=3.5mm
17 H60VG3 Dipole Dispersion (DLWG) vg3 DLWG c028 c055b c Rmanifold=3.7mm Slot depth=3.5mm F1 (GHz) c055b Rmanifold=3.0mm Slot depth=3.5mm Phase (deg) F 1 at avoided crossing C028: 323 MHz C055b: 291 MHz
18 How Deep Can We Cut? vg3 rtop b b-3.5mm a t n a b t a,b,t,b-3.5mm Celll number
19 Deeper Slot Depth c028(c) Slotdepth=4.5mm, Rmanif=3.0mm c028 C028 Slot depth: 4.5 mm Manifold radius: 3.0 mm F=429 MHz F1 (GHz) Phase (deg) c055(c) Slotdepth=4mm, Rmanif=2.75mm c055 C055 Slot depth: 4 mm Manifold radius: 2.75 mm F=426 MHz F1 (GHz) Phase (deg)
20 RF pulse heating RF heating around the slot likely a factor in high-power breakdown Need to quantify the heating Minimize pulse heating around the slot Reach a design mechanically feasible
21 RF Heating Around The Slot DDS/RDDS with sharp slot edges
22 Power Loss Distribution A=4.7mm Depth = 0 Depth = 3.0 Width=1.5mm (-3%) Width=2mm (-3%)
23 RF Heating With wide slot No wide slot DDS RDDS Wide slot Narrow slot Power Density T ( 0 C) (3mm) (2mm) (U=8.8542e-12) DLWG DDS Y Y DLWG DDS Y RDS ~10 RDDS Y Y RDDS Y
24 Slot Chamfered Dds04a b e nwa L h 3mm slot 2mm slot L H P density T ( 0 C) DDS04a Y Y DDS04b Y Y DDS04e Y Y DDS04nwa Y
25 Slot Rounded DDS05a b c nwa w R 3mm slot 2mm slot R P density T ( 0 C) DDS05a Y Y DDS05b -- Y DDS05c -- Y DDS05nwa Y
26 1.0 mm Narrow Slot R tangential plane 1.0mm slot R P density T ( 0 C) DDS05bd 1.0 Y DDS05be 1.0 Y DDS05bf 0.5 Y DDS05bg 0.2 Y
27 Narrow Slot With Rounding >40degC
28 PIE-shaped Slot rounded cell
29 PIE-Shaped Slot With Rounding 2mm slot R_round=0.5mm 0.8mm 1.0mm Slot width at b R P density T ( 0 C) Pie-HRDDS01a Pie-HRDDS01b Pie-HRDDS01c
30 PIE-Shaped Slot With Rounding 3mm Slot Opening 02a 02b 02c Slot width at b S depth R P density T ( 0 C) Pie-HRDDS02a Pie-HRDDS02b Pie-HRDDS02c
31 PIE-Shaped Slot With Rounding 2mm Slot Opening Slot width at b S depth R_side R_top P density T ( 0 C) Pie-HDDS01g Pie-HDDS01h Pie-HDDS01j
32 PIE-shaped Slot 3 Typical Cells Slot depth: 3.5mm
33 PIE-Shaped Slot θ θ
34 Dipole Mode Distribution In DDS1
35 H-Structure Dipole Designed Local Damping Options? H90VG5 PHI=150 0, vg=5.06% H60VG3 RDSFT (struct06) H90VG3 (RDSFT struct04) F (GHz) 16 F1 (GHz) F1 (GHz) Phase (degree) Phase (degree) Phase (deg) Manifold Good Good Bad Local bad bad good
36 Standing Wave Structure
37 PI-mode SW Structure PI-mode SW Structure, a=4.75mm A = 4.75 mm F = GHz Q = 8820 R = 68.0 MΩ/m R/Q = 7710 Es/Ea = F (GHz) Dense modes at PI Short structure length Low surface field with thick disk Phase (degree)
38 Cell Profile DLWG Ellip iris Round Thin T Thick T A (mm) T (mm) R (MΩ/m) R/Q Es/Ea PI mode Rounded cell Detuned Average a: 0.18λ Es/Ea designed to be about 2
39 Dipole Mode Detuning SW Tapered, Dipole Detuning 1.52E E E+10 8 sections F1 (Hz) 1.46E E E E E Cell number Need similar detuning as TW F 1 =8~10%/4σ Cannot detune within one structure Detune in 8 sections, 15 cells each (20cm)(not interleaved) 120 cells to detune full 8-10% spectrum
40 x15 SW Es/Ea Cell number Tapered Structure Parameters Es/Ea (round iris) 1.2E-02 SW Tapered, Full Detuning a,b,t (m) 1.0E E E E-03 a b t 2.0E E Cell number Bandwidth Variation In SW Tapered Structure Inverse taper in t for wider bandwidth at small a Adjust cell parameters to obtain flat field Bandwidth (MHz) Cell number
41 RF Parameters Of 8X15 Sections S1 S2 S3 S4 S5 S6 S7 S8 R(MΩ/m) P(MW) for G=70MV/m G(MV/m) for P=22MW
42 Simulation Of 15-cell Tapered Structure N F1 (Hz) a (mm) b (mm) t (mm) E E E E E E E E E E E E E E E E N F1 (Hz) a (mm) b (mm) t (mm) E E E E E E E E E E E E E E E E Test SW (#1 of 4) cell 1-15 R= 63 MΩ/m Flat field can be obtained in tapered structure
43 Optimizing Field Profile Half of 15-cell stack Boundary:M-E b of coupler cell 10-µm larger
44 8X15 Detuned Dipole Dispersion Thick Disk F1 (GHz) 20 F1 (GHz) phase (deg) phase (deg)
45 Dipole Mode Kick Factor 1.52E E+10 SW Tapered, Dipole Detuning F=8%/3.2σ F1 (Hz) 1.48E E E E E E Cell number x15 SW Dipole Dispersion 1.8E+16 SW structure dipole kick factors F1 (GHz) E E Ks (V/C/m*m) 1.2E+16 1E+16 8E+15 6E+15 Ks E Phase (deg) F1 (GHz)
46 8x15 Stack Dipole Kick Factors Need to damp 3 dipole bands 1.0E+16 8x15 Stack Dipole Modes sw1-15 sw61-75 sw E+15 K (V/C/m/m) 1.0E E E+12 Log 1.0E E E E E E+10 F (Hz) 8x15 Stack Dipole Modes sw1-15 sw61-75 sw E+15 K (V/C/m/m) 8.0E E E E E E+15 Linear 2.0E E E E E E E E+10 F (Hz)
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