CST EM : Examples. Chang-Kyun PARK (Ph. D. St.) Thin Films & Devices (TFD) Lab.

Transcription

1 CST Advanced Training Daedeok Convention Town ( ) CST EM : Examples TM EM Studio TM Chang-Kyun PARK (Ph. D. St.) ckpark@ihanyang.ac.kr Thin Films & Devices (TFD) Lab. Dept. of Electrical Engineering, Hanyang Ansan Campus, KOREA

2 OUTLINEUTLINE CST EM Studio TM v.2.0 Introduction Example E-static Electrometer RJ 45 LAN connector Variable capacitor Floating Potential Field Emitter Tapered-type gated FEA M-static Rotary Encoder LF Eddy current sensor J-static Circuit Breaker Tracking Electron gun

3 TFD Lab. Hanyang University Professor: Jin-Seok Park

4 TFD Lab. TFD Lab. Thin films and devices lab. for electronic displays and communications

5 CST EM Studio

6 MAFIA MAFIA (Maxwell s Equations by the Finite Integration Algorithm) MAFIA is an interactive program package for the computation of electromagnetic fields. It is based directly on the fundamental equations of electromagnetic fields, Maxwell s equations. MAFIA is a modular program, it is divided in preprocessor, postprocessor and solvers for different special cases of Maxwell s equations MAFIA includes an optimizer, it runs interactively as well as in batch or semi interactive using predefined command sequences. It has a powerful command language for automation and optimizing purposes and an advanced interactive graphical output with thousands of display options CST MAFIA

7 MAFIA Module MAFIA Module CST MAFIA

8 MAFIA The Following modules are available (I) M : Preprocessor, includes solid modeler, CAD import, 3D graphics P : Postprocessor, includes 3D graphics and calculation of deduced quantities like far field and impedance S : Static field module, solves electrostatics, magnetostatics, heat flow problems, stationary current flow problems and electro-quasistatic problems T3 : Time domain module, simulates time dependent wave propagation, most general and versatile in application. Uses Cartesian coordinates TS3 : Time domain module, simulates charged particle movement in time dependent fields including the interaction of particles and fields. Uses Cartesian coordinates only TS2 : Time domain module, simulates charged particle movement in time dependent fields including the interaction of particles and fields in cylinder symmetrical structures CST MAFIA

9 MAFIA The Following modules are available (II) E : Frequency domain eigenmode module, finds modes in resonators and waveguides W3 : Frequency domain module, covers the whole frequency range H3 : Thermodynamic module, solving thermodynamic problems in time domain in either Cartesian or polar coordinate system T2 : Time domain module, simulates time dependent wave propagation within cylinder symmetrical structures. Not yet available under GUI OO : Optimizer with many built in strategies. Optimizing capabilities not yet completely available under GUI A3 : Time domain acoustic solver. Not yet available under GUI CST MAFIA

10 The Simulation Method Background of the Simulation Method CST EM STUDIO is a general-purpose electromagnetic simulator based on the Finite Integration Technique (FIT), first purposed by Weiland in 1976/1977. Finite Integration + PBA (Statics to THz) Maxwell Grid Equations t = 0 t a iω t 0 E-static Frequency Domain (j>0) Implicit M-static J-static Tracking EMS Eigenvalue Problem (j=0) MWS MAFIA Explicit Time Domain PIC CST EM Studio

11 CST EM Studio Example: E-staticE

12 S-static 1: Electrometer Introduction This Example deals with the simulation of a simple electrometer device, which can be used for voltage measurements. The model used for the electrometer consists of three parts: the electrometer s scale, the ground, and the pointer. Results of interest: the capacitance and the torque for different angles of the pointer Pointer (PEC, 1,000V) PEC Scale (Dielectric, ε=10) The main dimensions of the electrometer device (unit: cm) Ground (PEC, 0V) CST EM Studio

13 S-static 1: Electrometer Summary Mesh generation Solver Meshcells Parameter sweep Total solver time Electrostatic 294,528 Angle From 20 to 70 (11steps) 48min, 10sec Meshcells: 294,528 CST EM Studio

14 S-static 1: Electrometer Potential E-Field CST EM Studio

15 S-static 1: Electrometer Torque vs angle CST EM Studio

16 S-static 2: RJ 45 Connector Introduction This example shows the calculation of the capacitance matrix of a RJ45 connection. The model consists of the connector and the corresponding socket, each containing eight wires for the signal transmission. The wires of the socket are fixed to a substrate plate, every other of them additionally connected to a metallic ground plane. This provides some kind of shielding effect for the transmission of the wire signals. Results of interest: capacitance Matrix CST EM Studio

17 S-static 2: RJ 45 Connector Define Potential Potential 2 (PCB PEC, 1V) Potential 3 (PCB PEC, 1V) Potential 4 (PCB PEC, 1V) Potential 1 (PCB PEC, 0V) Potential 5 (PCB PEC, 1V) CST EM Studio

18 S-static 2: RJ 45 Connector Potential E-Field CST EM Studio

19 S-static 2: RJ 45 Connector Capacitance Matrix CST EM Studio

20 S-static 3: Variable Capacitor Introduction The variable capacitor example demonstrates the parameter sweep feature in combination with the capacitance calculation. Epsilon (Dielectric, ε=100) Plate (PCB PEC, 1V) Parameter Sweep Plate (PCB PEC, 0V) CST EM Studio

21 S-static 3: Variable Capacitor Capacitance Vs Alpha CST EM Studio

22 S-static 4: Floating Potential Introduction This examples demonstrates how to consider floating potentials in an electrostatic calculation. It consists of four metallic plates and two plates of high dielectric material (relative permittivity 10000). On the two larger metallic plates a potential is defined, the other two metallic plates carry a charge of 0C. Plate (PCB PEC, 1V) PEC Floating Potential High dielectric material (relative permittivity 10000) Applied charge value: 0C Plate (PCB PEC, -1V) CST EM Studio

23 S-static 4: Floating Potential Result: Electric Field Distributions 1V 0.469V 0.467V -1V V V CST EM Studio

24 S-static 4: Floating Potential Result: Electric Field Distributions CST EM Studio

25 S-static 4: Floating Potential Only PEC Conditions CST EM Studio

26 S-static 4: Floating Potential Result: Potential Distributions 1V 0.469V 0V -1V V 0V CST EM Studio

27 S-static 4: Floating Potential Result: Electric Field Distributions CST EM Studio

28 S-static 5: Field emitter X-cut Plane Anode (50V) Gate (30V) Insulator, SiO 2 10μm CNT Cathode (0V) Isolated Electrode Ballast layer, a-si

29 S-static 5: Field emitter Material Property Unit: μm CNT (PEC) Diameter: Height: 1 Tip radius: Height: 2 Diameter: Base: a-si

30 S-static 5: Field emitter Potential Anode (50V) Unit: μm Gate (30V) Cathode (0V)

31 S-static 5: Field emitter Floating Potential Unit: μm CNT Isolated Electrode

32 S-static 5: Field emitter Results: Potential Distribution Tip Region: 27V Isolated Electrode: 26V

33 S-static 5: Field emitter Results: Electric Field Distribution

34 S-static 5: Field emitter Results: 1D Plot

35 S-static 6: Tapered-type Gated-FEA Geometry Gate (50V) Parameter Sweep Insulator, SiO 2 Monitoring Point CNT-Floating Potential (0C) Cathode (0V) Inter-dielectric Ballast layer, a-si

36 S-static 6: Tapered-type Gated-FEA Parameter Sweep (Pierce Electrode angle: 90 o ~12.5 o ) Result: Potential Distributions 68 o 45 o 90 o

37 S-static 6: Tapered-type Gated-FEA Parameter Sweep (Pierce Electrode angle: 90 o ~12.5 o ) Result: Electric Field Distributions 68 o 45 o 90 o

38 S-static 7: ICP-Reactor ICP Reactor

39 S-static 7: ICP-Reactor Simulation of ICP Reactor under DC Bias Conditions Modeling of ICP Reactor Simulation System summary OS: MS Windows XP V.5.1 SP1 Model: Intel Zeon (SE7505VB2) 2 CPU Process: Genuine Intel ~2790Mhz Memory: 1,024.00MB Graphic Adapter: Quadro4 980XGL Simulation summary Tool: CST EM Studio TM v 1.3 (CST GmbH) Simulation field: Electrostatic Solver Number of nodes: 1,074,480 Mesh generation time: 130 s Solver time: 13 s

40 S-static 7: ICP-Reactor Conditions Simulation Results Under 300 V Conditions Potential distribution Electric Field distribution

41 S-static 7: ICP-Reactor Conditions Simulation Results Under -450 V Conditions Potential distribution Electric Field distribution

42 CST EM Studio Example: M-staticM

43 M-static 1: Rotary Encoder Introduction In this tutorial a rotary encoder consisting of two iron yokes, a permanent magnet and two hall sensors is analyzed. Both yokes form a magnetic circuit, which is driven by a cylindrical permanent magnet. Two hall sensors are placed in the air gap between the yokes to measure the flux density in the gap. By twisting the yokes the B-field changes linear with the rotation angle. Upper Yoke (Iron 1000) Magnet Hall Sensor 0.2 T z Bottom Yoke (Iron 1000) CST EM Studio

44 M-static 1: Rotary Encoder B-Field CST EM Studio

45 M-static 1: Rotary Encoder Parameter Sweep Field Watch Position CST EM Studio

46 CST EM Studio Example: LF (Low Frequency) Solver

47 LF: Eddy Current Sensor Introduction In this example and eddy current sensor is modeled to simulate non-destructive material test. You will analyze an eddy current sensor driven by a low frequency coil generating eddy currents in an aluminum probe plate. The structure depicted above consists of the sensor, represented by an excitation current coil embedded in iron material. Below this sensor the probe plate is given as a lossy aluminum material, allowing the flow of eddy current. Inside this plate a material defect is modeled as a gap, which should be detected by the changing voltage at the coil. CST EM Studio

48 LF: Eddy Current Sensor B-Field (0 o ) Eddy Current (90 o ) CST EM Studio

49 CST EM Studio Example: Stationary Currents Solver

50 SC: Circuit Breaker Introduction In this example, you will analyze a circuit breaker consisting of two contact springs connected by a bridge. One matter of concern is the current flow from one contact over the bridge to the other contact. Therefore two current port are defined for the stationary current solver. After the solver run the fields are visualized and then used as a source field for a subsequent carried out magnetostatic calculation. Cupper (J-port, 0.05V) Cupper (J-port, -0.05V) Contact pad (PEC) Bridge (PEC) CST EM Studio

51 SC: Circuit Breaker Current Density Loss Power (P): e+001 [W] R = V 2 /P=0.1*0.1/P = e-4 I = P/V = V/R = [A] CST EM Studio

52 SC: Circuit Breaker H-Field CST EM Studio

53 CST EM Studio Example: Tracking Solver

54 Tracking 1: Electron Gun Introduction This example demonstrated how a particle tracking can be performed. Two types of field results were used here, an electrostaic field is used to accelerate electrons being emitted from a cathode and a magnetostatic field which is caused by a helmholz coil in order to focus the electron beam. Anode (PEC, 1000V) Cathode (PEC, 0V) Focus coil (0.4A) CST EM Studio

55 Tracking 1: Electron Gun Particle Source Particle Tracking Emission Site (electron) CST EM Studio